| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/16/2013 | US20130119345 Thin film transistor and a display device including the same |
| 05/16/2013 | US20130119324 Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor |
| 05/16/2013 | DE112011101277T5 Verfahren und Struktur zum Abgleichen der Austrittsarbeit in Transistoren, die einen Gate-Elektroden-Isolator mit hoher Dielektrizitätskonstante und eine Metall-Gate-Elektrode (HKMG) enthalten Provide procedures and structure for tuning the work function in the transistors having a gate electrode insulator with high dielectric constant and a metal gate electrode (HKMG) |
| 05/16/2013 | DE112010005681T5 Leistungshalbleiterbauteil Power semiconductor component |
| 05/16/2013 | DE102012102783A1 Rippenfeldeffekttransistoren und Verfahren zur Herstellung derselben Ribs field effect transistors and methods for producing same |
| 05/16/2013 | DE102011118273A1 Herstellung einer Halbleitereinrichtung mit mindestens einem säulen- oder wandförmigen Halbleiter-Element Manufacturing a semiconductor device having at least one columnar or wall-like semiconductor element |
| 05/16/2013 | DE102011079833B4 Verfahren zur Bildung einer vergrabenen Ätzstoppschicht in einem Transistor mit eingebettetem verformungsinduzierenden Material, das in Aussparungen mit geneigten Seitenwänden hergestellt ist, und Halbleiterbauelement A method of forming a buried etch stop layer in a transistor with an embedded strain-inducing material which is prepared in recesses with inclined side walls, and the semiconductor component |
| 05/16/2013 | DE102009044474B4 Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements A semiconductor device and method of manufacturing a semiconductor device |
| 05/16/2013 | DE102007027378B4 Verfahren zur Herstellung eines elektronischen Bauelements A method of manufacturing an electronic component |
| 05/16/2013 | DE102007015295B4 Leistungshalbleiterbauelement mit Temperatursensor und Verfahren zur Herstellung eines Leistungshalbleiterbauelements mit einem integrierten Temperatursensor Power semiconductor component with the temperature sensor and method for manufacturing a power semiconductor device with an integrated temperature sensor |
| 05/16/2013 | DE102007012986B4 Elektronisches Bauelement und Verfahren zu dessen Herstellung An electronic device and method for its production |
| 05/16/2013 | DE102005011159B4 Halbleiterbauteil mit oberflächenmontierbaren Außenkontaktflächen und Verfahren zur Herstellung desselben Of the same semiconductor device with surface-mountable external contact surfaces and methods for preparing |
| 05/16/2013 | DE102004057764B4 Verfahren zur Herstellung eines Substrats mit kristallinen Halbleitergebieten mit unterschiedlichen Eigenschaften, die über einem kristallinen Vollsubstrat angeordnet sind und damit hergestelltes Halbleiterbauelement A method for producing a substrate having crystalline semiconductor regions with different properties, which are arranged over a crystalline solid substrate, and thus semiconductor component produced |
| 05/15/2013 | EP2592655A1 Fabrication of single or multiple gate field plates |
| 05/15/2013 | EP2591506A1 Microelectronic device having metal interconnection levels connected by programmable vias |
| 05/15/2013 | EP2591499A1 Radiation-hardened roic with tdi capability, multi-layer sensor chip assembly and method for imaging |
| 05/15/2013 | EP2591496A1 Symmetric ldmos transistor and method of production |
| 05/15/2013 | EP2591495A1 Method and device for producing an edge structure of a semiconductor component |
| 05/15/2013 | CN202940241U High-pressure-resistant insulated gate bipolar transistor (IGBT) |
| 05/15/2013 | CN202940227U Soft-material ring and hard epoxy-resin packaging diode |
| 05/15/2013 | CN103109373A Display device thin film semiconductor device and method of manufacturing same |
| 05/15/2013 | CN103109372A Method for manufacturing semiconductor device and method for growing graphene |
| 05/15/2013 | CN103109371A Integrated fin-based field effect transistor (FINFET) and method of fabrication of same |
| 05/15/2013 | CN103109369A Semiconductor device |
| 05/15/2013 | CN103109360A Thin film transistor array fabrication method, thin film transistor array, and display device |
| 05/15/2013 | CN103109356A Silicon etching fluid and method for producing transistor using same |
| 05/15/2013 | CN103109351A Epitaxial substrate for semiconductor element, method for producing epitaxial substrate for semiconductor element, and semiconductor element |
| 05/15/2013 | CN103109314A Semiconductor display device and driving method the same |
| 05/15/2013 | CN103107205A Zinc-oxide-based metal oxide semiconductor (MOS) element on graphite substrate |
| 05/15/2013 | CN103107204A Vertical gallium nitride schottky diode |
| 05/15/2013 | CN103107203A Diode and manufacturing method thereof |
| 05/15/2013 | CN103107202A Thin film transistor structure, liquid crystal display device and manufacturing method |
| 05/15/2013 | CN103107201A Semiconductor device and method for manufacturing the same |
| 05/15/2013 | CN103107200A Semiconductor device |
| 05/15/2013 | CN103107199A Patterning contacts in carbon nanotube devices |
| 05/15/2013 | CN103107198A Structure and method for MOSFETs with high-k and metal gate structure |
| 05/15/2013 | CN103107197A Semiconductor device with enhanced strain |
| 05/15/2013 | CN103107196A Fin field effect transistors and methods for fabricating the same |
| 05/15/2013 | CN103107195A Strained structures of semiconductor devices |
| 05/15/2013 | CN103107194A Trench type power transistor device and fabricating method thereof |
| 05/15/2013 | CN103107193A Grooved type insulated gate field effect transistor |
| 05/15/2013 | CN103107192A 半导体装置及其制造方法 Semiconductor device and manufacturing method |
| 05/15/2013 | CN103107191A High-voltage P-type laterally diffused metal oxide semiconductor (LDMOS) structure and manufacturing method thereof |
| 05/15/2013 | CN103107190A InAs epitaxial materials for high-speed high electron mobility transistor (HEMT) components and preparation method thereof |
| 05/15/2013 | CN103107189A Insulated gate bipolar translator (IGBT) back structure and preparing method thereof |
| 05/15/2013 | CN103107188A Parasitic plug-and-play (PNP) component structure and manufacturing method thereof in a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) process |
| 05/15/2013 | CN103107187A 半导体装置及其制造方法 Semiconductor device and manufacturing method |
| 05/15/2013 | CN103107186A Parasitic N-I-P type PIN device structure in bipolar junction transistor complementary metal oxide semiconductor (Bi CMOS) process and manufacturing method thereof |
| 05/15/2013 | CN103107185A Germanium-silicon power heterojunction bipolar transistor (HBT), manufacturing method thereof and germanium-silicon power HBT multi-pointing device |
| 05/15/2013 | CN103107151A Termination structure for gallium nitride Schottky diode |
| 05/15/2013 | CN103107139A Structure of field effect transistor in fin-shaped structure and manufacturing method thereof |
| 05/15/2013 | CN103107095A Thin film transistor, manufacturing method of thin film transistor, array substrate and display device |
| 05/15/2013 | CN103107094A Depletion mode power field effect transistor and preparation method thereof |
| 05/15/2013 | CN103107092A Carbon implant for workfunction adjustment in replacement gate transistor |
| 05/15/2013 | CN103107091A Semiconductor structure and manufacture method thereof |
| 05/15/2013 | CN103107088A Fin-shaped field effect transistor with periphery grid electrode structure and manufacturing method thereof |
| 05/15/2013 | CN103107086A Manufacturing technique of low-voltage chip and low-voltage chip thereof |
| 05/15/2013 | CN103107077A Graphene device and manufacturing method thereof |
| 05/15/2013 | CN103107068A Nickel (Ni) film annealing side gate graphene transistor preparation method based on reaction of silicon carbide (SiC) and chlorine gas |
| 05/15/2013 | CN103102801A Solution composition for passivation layer, thin film transistor array panel and manufacturing method for thin film transistor array panel |
| 05/15/2013 | CN102201413B PMOS memory unit and PMOS memory unit array |
| 05/15/2013 | CN102172885B Substrate polishing device and polished substrate thereof |
| 05/15/2013 | CN102136489B Semiconductor structure and manufacture method thereof |
| 05/15/2013 | CN101911287B Semiconductor memory device and method for manufacturing same |
| 05/15/2013 | CN101897028B Structure and method for forming field effect transistor with low resistance channel region |
| 05/15/2013 | CN101689562B Semiconductor device |
| 05/15/2013 | CN101331597B Memory cell having stressed layers |
| 05/14/2013 | US8441600 Display and pixel circuit thereof |
| 05/14/2013 | US8441185 Semiconductor device with improved pixel arrangement |
| 05/14/2013 | US8441131 Strain-compensating fill patterns for controlling semiconductor chip package interactions |
| 05/14/2013 | US8441130 Power supply interconnect structure of semiconductor integrated circuit |
| 05/14/2013 | US8441129 Semiconductor device |
| 05/14/2013 | US8441123 Semiconductor device with metal dam and fabricating method |
| 05/14/2013 | US8441108 Nitride semiconductor element having electrode on m-plane and method for producing the same |
| 05/14/2013 | US8441107 Gate structures |
| 05/14/2013 | US8441103 Embedded series deep trench capacitors and methods of manufacture |
| 05/14/2013 | US8441102 Semiconductor device having a capacitor |
| 05/14/2013 | US8441099 Wireless chip |
| 05/14/2013 | US8441095 Semiconductor device having a ring oscillator and MISFET for converting voltage fluctuation to frequency fluctuation |
| 05/14/2013 | US8441093 Shared membrane thermopile sensor array |
| 05/14/2013 | US8441084 Horizontal polysilicon-germanium heterojunction bipolar transistor |
| 05/14/2013 | US8441083 Semiconductor device including a magnetic tunnel junction and method of manufacturing the same |
| 05/14/2013 | US8441082 Memory element and memory |
| 05/14/2013 | US8441079 Semiconductor device with gate stack structure |
| 05/14/2013 | US8441074 Substrate fins with different heights |
| 05/14/2013 | US8441070 Semiconductor device and method of manufacturing semiconductor device |
| 05/14/2013 | US8441069 Structure and method for forming trench-gate field effect transistor with source plug |
| 05/14/2013 | US8441068 Semiconductor device and method for forming the same |
| 05/14/2013 | US8441067 Power device with low parasitic transistor and method of making the same |
| 05/14/2013 | US8441066 Semiconductor device |
| 05/14/2013 | US8441065 Semiconductor device and manufacturing method of the same |
| 05/14/2013 | US8441064 Scalable interpoly dielectric stacks with improved immunity to program saturation |
| 05/14/2013 | US8441063 Memory with extended charge trapping layer |
| 05/14/2013 | US8441062 Nonvolatile memory devices having memory cell transistors therein with lower bandgap source/drain regions |
| 05/14/2013 | US8441060 Nonvolatile memory element and nonvolatile memory device incorporating nonvolatile memory element |
| 05/14/2013 | US8441059 Memory devices including vertical pillars and methods of manufacturing and operating the same |
| 05/14/2013 | US8441058 Memory devices having reduced interference between floating gates and methods of fabricating such devices |
| 05/14/2013 | US8441057 Embedded memory device having MIM capacitor formed in excavated structure |
| 05/14/2013 | US8441056 NROM memory cell, memory array, related devices and methods |
| 05/14/2013 | US8441055 Methods for forming strained channel dynamic random access memory devices |