Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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07/18/2013 | US20130181278 Non-volatile memory device and method for fabricating the device |
07/18/2013 | US20130181277 Semiconductor device and method for fabricating thereof |
07/18/2013 | US20130181276 Non-self aligned non-volatile memory structure |
07/18/2013 | US20130181275 Manufacturing method of nonvolatile semiconductor storage device and a nonvolatile semiconductor storage device |
07/18/2013 | US20130181274 Semiconductor device and method for manufacturing the same |
07/18/2013 | US20130181273 Method of making a non-volatile double gate memory cell |
07/18/2013 | US20130181272 Ic die, semiconductor package, printed circuit board and ic die manufacturing method |
07/18/2013 | US20130181271 Semiconductor device and manufacturing method thereof |
07/18/2013 | US20130181269 Decoupling capacitor and method of making same |
07/18/2013 | US20130181267 Wafer fill patterns and uses |
07/18/2013 | US20130181266 Semiconductor device and method of fabricating the same |
07/18/2013 | US20130181265 Methods of Forming a Gate Cap Layer Above a Replacement Gate Structure and a Semiconductor Device That Includes Such a Gate Structure and Cap Layer |
07/18/2013 | US20130181264 Semiconductor structure and process thereof |
07/18/2013 | US20130181263 Methods of Forming a Dielectric Cap Layer on a Metal Gate Structure |
07/18/2013 | US20130181262 Performing Treatment on Stressors |
07/18/2013 | US20130181261 Borderless contact structure |
07/18/2013 | US20130181260 Method for forming n-shaped bottom stress liner |
07/18/2013 | US20130181259 Step-like spacer profile |
07/18/2013 | US20130181256 Semiconductor devices |
07/18/2013 | US20130181255 Semiconductor device and method for producing the same |
07/18/2013 | US20130181254 Semiconductor device |
07/18/2013 | US20130181253 Semiconductor structure and manufacturing method thereof |
07/18/2013 | US20130181252 Semiconductor device |
07/18/2013 | US20130181231 Micropipe-free silicon carbide and related method of manufacture |
07/18/2013 | US20130181230 Semiconductor substrate and semiconductor substrate manufacturing method |
07/18/2013 | US20130181229 Semiconductor device and method for manufacturing same |
07/18/2013 | US20130181228 Power semiconductor module and method of manufacturing the same |
07/18/2013 | US20130181226 Semiconductor device and method for producing the same |
07/18/2013 | US20130181225 Semiconductor device and method of manufacturing the same |
07/18/2013 | US20130181224 Semiconductor structure |
07/18/2013 | US20130181222 Thin film transistor array baseplate |
07/18/2013 | US20130181221 Semiconductor device and method of manufacturing the same |
07/18/2013 | US20130181217 Semiconductor device, display device, and method for manufacturing semiconductor device and display device |
07/18/2013 | US20130181216 Semiconductor device |
07/18/2013 | US20130181215 Rotated channel semiconductor field effect transistor |
07/18/2013 | US20130181214 Semiconductor device |
07/18/2013 | US20130181213 Thin film functional for touch screen and method for forming the same |
07/18/2013 | US20130181212 Semiconductor device and method for forming the same |
07/18/2013 | US20130181211 Metal oxide semiconductor device |
07/18/2013 | US20130181210 High-performance heterostructure fet devices and methods |
07/18/2013 | US20130181203 Display Device |
07/18/2013 | US20130181200 Thin-film transistor, fabrication method thereof, and image display device |
07/18/2013 | US20130181189 Logic Elements Comprising Carbon Nanotube Field Effect Transistor (CNTFET) Devices and Methods of Making Same |
07/18/2013 | US20130181188 Iii nitride epitaxial substrate and deep ultraviolet light emitting device using the same |
07/18/2013 | US20130181185 Tunneling field effect transistor and method for fabricating the same |
07/18/2013 | DE112011103351T5 Herstellung von Einheiten mit metallischen Ersatz-Gates Production of units with metal replacement gate |
07/18/2013 | DE112011103350T5 Chemisch-Mechanische Planarisierungsprozesse zum Herstellen von Finfet-Einheiten Chemical-mechanical planarization processes for producing FinFET devices |
07/18/2013 | DE112011102082T5 Phasensteuerungsthyristor mit verbessertem Muster von lokalen Emitterkurzschlusspunkten Phasensteuerungsthyristor with improved pattern of local emitter short circuit points |
07/18/2013 | DE112011101971T5 Beschleunigungssensor Acceleration sensor |
07/18/2013 | DE102013100423A1 Halbleitertransistor mit Grabenkontakten und Herstellungsverfahren dafür Semiconductor transistor with grave contacts and manufacturing method thereof |
07/18/2013 | DE102013100422A1 Verfahren zum Bilden von selbstjustierenden Grabenkontakten von Halbleiterkomponenten und Halbleiterkomponente A method of forming self-aligned contacts grave of semiconductor components and semiconductor component |
07/18/2013 | DE102013100079A1 Verfahren zum Prozessieren eines Kontaktpads A method for processing a contact pad |
07/18/2013 | DE102013100025A1 Semiconductor device e.g. integrated circuit integrated with metal-insulator-metal (MIM) capacitor, has MIM capacitor which is formed in the grooves, partially over the substrate |
07/18/2013 | DE102012113110A1 Integrierte Halbleitervorrichtung mit Heteroübergang und Verfahren zur Erzeugung einer integrierten Halbleitervorrichtung mit Heteroübergang Integrated semiconductor device comprising hetero-junction, and method for producing an integrated semiconductor device having heterojunction |
07/18/2013 | DE102012000718A1 Reversible electrical energy storage device such as reversible battery for fossil fuel propelled vehicle, has non-conductive, insulating depletion region that is formed in electride portion of n-type semiconductor portion |
07/18/2013 | DE102011076269B4 Halbleiterbauelement Semiconductor device |
07/18/2013 | DE102008038552B4 Vertikaldiode unter Verwendung von Silizium, ausgebildet durch selektives epitaxiales Aufwachsen Vertical diode using silicon, is formed by selective epitaxial growth |
07/17/2013 | EP2615657A1 Organic semiconductor material, organic semiconductor composition, organic thin film, field-effect transistor, and manufacturing method therefor |
07/17/2013 | EP2615643A2 Field-effect transistor and manufacturing method thereof |
07/17/2013 | EP2615642A1 Trench-gate MISFET |
07/17/2013 | EP2615641A2 Chip attack protection |
07/17/2013 | EP2614529A2 Methods of forming semiconductor contacts and related semiconductor devices |
07/17/2013 | EP2614068A1 Anthra[2,3-b:7,6b']dithiophene derivatives and their use as organic semiconductors |
07/17/2013 | CN203071080U Diode component having temperature compensation |
07/17/2013 | CN203071079U IGBT (insulated gate bipolar translator) chip with terminal protection structure |
07/17/2013 | CN203071078U Low-gate-capacitance IGBT power device capable of source region self-aligning |
07/17/2013 | CN203071076U Oxide semiconductor film detector and circuit structure for applying active pixel on oxide semiconductor film detector thereof |
07/17/2013 | CN1918708B 半导体装置 Semiconductor device |
07/17/2013 | CN103210500A Method for manufacturing semiconductor device |
07/17/2013 | CN103210496A Semiconductor device and manufacturing method therefor |
07/17/2013 | CN103210495A Semiconductor device and method for manufacturing same |
07/17/2013 | CN103210494A Substrate for display device, method for producing same, and display device |
07/17/2013 | CN103210493A Butted SOI junction isolation structures and devices and method of fabrication |
07/17/2013 | CN103210492A Strained nanowire devices |
07/17/2013 | CN103210481A Method of forming e-fuse in replacement metal gate manufacturing process |
07/17/2013 | CN103208535A Decoupling Capacitor And Method Of Making Same |
07/17/2013 | CN103208534A Schottky device with simplified process and manufacturing method |
07/17/2013 | CN103208533A Schottky super junction semiconductor device and preparation method thereof |
07/17/2013 | CN103208532A Fin type positive-intrinsic-negative (PIN) diode |
07/17/2013 | CN103208531A Fast recovery diode (FRD) chip and manufacturing method for FRD chip |
07/17/2013 | CN103208530A Low capacitance super-deep groove transient voltage restraining diode structure |
07/17/2013 | CN103208529A Semiconductor diode and method for forming semiconductor diode |
07/17/2013 | CN103208528A Semiconductor device, semiconductor device manufacturing method, liquid crystal display device and electronic apparatus |
07/17/2013 | CN103208527A Thin film transistor, method of manufacturing thin film transistor, display, and electronic apparatus |
07/17/2013 | CN103208526A Semiconductor device and manufacture method thereof |
07/17/2013 | CN103208525A Thin film transistor, manufacturing method of thin film transistor, array substrate and display device |
07/17/2013 | CN103208524A Multilayer dual-gate graphene field effect transistor and preparation method for same |
07/17/2013 | CN103208523A High-voltage device and manufacturing method thereof |
07/17/2013 | CN103208522A Lateral DMOS device with dummy gate |
07/17/2013 | CN103208521A HVMOS devices and methods for forming the same |
07/17/2013 | CN103208520A Lateral diffused metal-oxide semiconductor element |
07/17/2013 | CN103208519A N-type laterally diffused metal oxide semiconductor (NLMOS) structure compatible with 5-V complementary metal oxide semiconductor (CMOS) process and manufacturing method thereof |
07/17/2013 | CN103208518A Asymmetric source-drain self aligned radio-frequency power device and manufacturing method thereof |
07/17/2013 | CN103208517A Control fin heights in FinFET structures |
07/17/2013 | CN103208516A Surface voltage-resisting area for semiconductor device, semiconductor device and capacitor |
07/17/2013 | CN103208515A Thin film transistor |
07/17/2013 | CN103208514A Semiconductor device containing metals and preparation method of semiconductor device |
07/17/2013 | CN103208513A Semiconductor device |
07/17/2013 | CN103208512A N-channel metal oxide semiconductor (NMOS) switching element of low source drain junction capacitor and manufacturing method thereof |
07/17/2013 | CN103208511A Super-junction Schottky semiconductor device and preparation method thereof |