| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/12/2015 | DE102014107721A1 Leistungshalbleiter und zugehöriges Herstellungsverfahren Power semiconductors and associated production method |
| 02/12/2015 | DE102014011854A1 Zündsteuerungs-Kurzschlussschutz Ignition control circuit protection |
| 02/12/2015 | DE102013108518A1 Halbleitervorrichtung und verfahren zum herstellen derselben A semiconductor device and method of manufacturing the same |
| 02/12/2015 | DE102013104019B4 Verfahren und Struktur zur Steigerung der Leistungsfähigkeit und der Minderung der NBTI (Negative Bias Temperature Instability) eines MOSFET Procedures and structure to improve the performance and reduce the NBTI (Negative Bias Temperature Instability) of a MOSFET |
| 02/12/2015 | DE102008048832B4 Halbleitervorrichtung Semiconductor device |
| 02/12/2015 | DE102004026233B4 Trenchtransistor Trench transistor |
| 02/11/2015 | EP2835833A2 Nitride-based field-effect transistor and method of fabricating the same |
| 02/11/2015 | EP2835832A2 Improved method for producing doped areas and/or exerting a stress on the spacers of a transistor |
| 02/11/2015 | EP2835828A1 Semiconductor device and semiconductor device fabrication method |
| 02/11/2015 | EP2835825A1 SOI integrated circuit provided with a device for protection against electrostatic discharges |
| 02/11/2015 | EP2835819A2 Silicon carbide semiconductor device manufacturing method |
| 02/11/2015 | EP2834850A1 Monolithic integration of cmos and non-silicon devices |
| 02/11/2015 | CN204155940U 一种平面双结型稳压二极管芯片 A flat double junction Zener diode chip |
| 02/11/2015 | CN204155939U 一种恒流二极管 One kind of constant current diode |
| 02/11/2015 | CN204155938U 半导体器件 Semiconductor devices |
| 02/11/2015 | CN204155937U 一种氧化物半导体薄膜晶体管 An oxide semiconductor thin film transistor |
| 02/11/2015 | CN204155936U 一种金属氧化物薄膜晶体管和阵列基板 Of a metal oxide thin film transistor array substrate and |
| 02/11/2015 | CN204155935U 半导体器件 Semiconductor devices |
| 02/11/2015 | CN104350767A 静电容量型传感器、音响传感器及传声器 Capacitance-type sensors, acoustic sensors and microphones |
| 02/11/2015 | CN104350603A 非易失性电荷俘获存储器件和逻辑cmos器件的集成 Charge trapping non-volatile memory device and logic device integrated cmos |
| 02/11/2015 | CN104350602A 绝缘栅型双极晶体管 The insulated gate bipolar transistor |
| 02/11/2015 | CN104350601A Hemt装置和制造hemt装置的方法 Method Hemt apparatus and manufacturing apparatus hemt |
| 02/11/2015 | CN104350600A 薄膜晶体管及其制造方法、显示装置和电子设备 A thin film transistor and its manufacturing method, display device and electronic equipment |
| 02/11/2015 | CN104350579A 制造半导体器件的方法 The method of manufacturing a semiconductor device |
| 02/11/2015 | CN104350533A 薄膜半导体基板、发光面板以及薄膜半导体基板的制造方法 The method of manufacturing a thin film semiconductor substrate, and a thin film semiconductor light emitting panel substrate |
| 02/11/2015 | CN104350532A 显示装置、半导体装置和制造显示装置的方法 Display apparatus, a method and apparatus for manufacturing a display device of a semiconductor |
| 02/11/2015 | CN104350275A 点火器、点火器的控制方法以及内燃机用点火装置 Igniter, ignition control method of an internal combustion engine with an ignition device and |
| 02/11/2015 | CN104347733A 氮化镓系二极管及其制造方法 The gallium nitride-based diode and its manufacturing method |
| 02/11/2015 | CN104347732A 接面能障肖特基二极管及其制造方法 Surface energy barrier Schottky diode and its manufacturing method |
| 02/11/2015 | CN104347731A 一种二极管结构 To a diode structure |
| 02/11/2015 | CN104347730A 半导体器件及制造方法 Semiconductor device and method of manufacture |
| 02/11/2015 | CN104347729A 鳍式二极管结构 Fin diode structure |
| 02/11/2015 | CN104347728A 透明金属氧化物纳米颗粒组合物、其制造方法以及包括该组合物的制品 Transparent metal oxide nanoparticle composition, and a method of manufacturing an article comprising the composition |
| 02/11/2015 | CN104347727A 薄膜晶体管及其制造方法以及存储电容器与半导体元件 A thin film transistor and a storage capacitor and a manufacturing method of the semiconductor element |
| 02/11/2015 | CN104347726A 薄膜晶体管衬底及其制造方法以及显示装置 The thin film transistor substrate and a display device and manufacturing method thereof |
| 02/11/2015 | CN104347725A 遂穿场效应晶体管及其制造方法 Tunneling field effect transistor and manufacturing method thereof |
| 02/11/2015 | CN104347724A 一种具有屏蔽环的ldmos器件及其制备方法 An ldmos device shielding ring and preparation method |
| 02/11/2015 | CN104347723A 无结绝缘栅电流限制器装置 Knotless insulated gate current limiter device |
| 02/11/2015 | CN104347722A 功率半导体器件和方法 Power semiconductor devices and methods |
| 02/11/2015 | CN104347721A 功率晶体管 Power Transistors |
| 02/11/2015 | CN104347720A 半导体装置和用于制造该半导体装置的方法 A semiconductor device and a method for manufacturing the semiconductor device |
| 02/11/2015 | CN104347719A 半导体装置 Semiconductor device |
| 02/11/2015 | CN104347718A 半导体装置 Semiconductor device |
| 02/11/2015 | CN104347717A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/11/2015 | CN104347716A 鳍形场效晶体管器件和形成鳍形场效晶体管器件的方法 Fin-type field effect transistor device and forming a fin-type field effect transistor devices method |
| 02/11/2015 | CN104347715A 包括边缘端接的半导体器件 A semiconductor device including an edge termination |
| 02/11/2015 | CN104347714A 鳍型场效应晶体管装置及其形成方法 Fin-type field effect transistor device and method of forming |
| 02/11/2015 | CN104347713A 具有集成栅极-电阻器的功率mos晶体管 With integrated gate - resistor power mos transistor |
| 02/11/2015 | CN104347712A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/11/2015 | CN104347711A 具有横向沟道的三维半导体器件及其制造方法 Having a three-dimensional semiconductor device and manufacturing method of the transverse channels |
| 02/11/2015 | CN104347710A 一种vdmos器件的条形元胞结构及其制作方法 Submit cellular structure and production method vdmos device |
| 02/11/2015 | CN104347709A 半导体装置 Semiconductor device |
| 02/11/2015 | CN104347708A 多栅vdmos晶体管及其形成方法 Multi-gate transistor and method of forming vdmos |
| 02/11/2015 | CN104347707A 一种mosfet结构及其制造方法 One kind of structure and manufacturing method mosfet |
| 02/11/2015 | CN104347706A 射频ldmos器件及制造方法 RF ldmos device and method of manufacture |
| 02/11/2015 | CN104347705A 一种应力沟道pmos器件及其制作方法 Pmos for stress-channel device and manufacturing method thereof |
| 02/11/2015 | CN104347704A 遂穿场效应晶体管及其制造方法 Tunneling field effect transistor and manufacturing method thereof |
| 02/11/2015 | CN104347703A 金属-氧化物-半导体mos器件和其制造方法 Metal - oxide - semiconductor device and manufacturing method thereof mos |
| 02/11/2015 | CN104347702A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/11/2015 | CN104347701A 一种具有复合钝化层结构的场效应晶体管 A field effect transistor having a composite passivation layer structure |
| 02/11/2015 | CN104347700A 一种GaN基凹栅增强型HEMT器件 One kind of enhancement mode GaN-based HEMT devices recessed gate |
| 02/11/2015 | CN104347699A 氮化物系场效应晶体管及其制造方法 Nitride-based field effect transistor and manufacturing method thereof |
| 02/11/2015 | CN104347698A 半导体装置 Semiconductor device |
| 02/11/2015 | CN104347697A 半导体器件和用于制造半导体器件的方法 A semiconductor device and a method for manufacturing a semiconductor device |
| 02/11/2015 | CN104347696A 半导体装置以及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/11/2015 | CN104347695A 一种提高器件纵向耐压能力的半导体装置 A way to improve the ability of the device breakdown voltage semiconductor device lengthwise |
| 02/11/2015 | CN104347694A 半导体装置及半导体装置的制造方法 Semiconductor device and manufacturing method of a semiconductor device |
| 02/11/2015 | CN104347693A 功率半导体器件及其制造方法 Power semiconductor device and manufacturing method thereof |
| 02/11/2015 | CN104347692A 抑制输出非线性开启的隧穿场效应晶体管及其制备方法 Suppress output nonlinear tunneling field effect transistor is turned on its preparation method |
| 02/11/2015 | CN104347691A 半导体装置及其操作方法 Semiconductor device and method of operation |
| 02/11/2015 | CN104347690A 具有场效应晶体管的半导体器件 A semiconductor device having a field effect transistor |
| 02/11/2015 | CN104347689A 双沟槽-栅极绝缘栅双极晶体管结构 Bis trench - gate insulated gate bipolar transistor structure |
| 02/11/2015 | CN104347688A 调节mos器件中的锗百分比 Adjust the percentage of germanium devices mos |
| 02/11/2015 | CN104347687A 沟槽型mosfet栅极引出端结构及制造方法 End of the structure and manufacturing method of trench gate lead mosfet |
| 02/11/2015 | CN104347686A 一种高电流上升率的晶闸管芯片 A high-current rising rate of thyristor chips |
| 02/11/2015 | CN104347685A 半导体装置 Semiconductor device |
| 02/11/2015 | CN104347684A 通过器件隔离结构隔离的半导体开关器件 Isolated by the device isolation structure semiconductor switching device |
| 02/11/2015 | CN104347683A 半导体器件 Semiconductor devices |
| 02/11/2015 | CN104347682A 半导体结构 Semiconductor structure |
| 02/11/2015 | CN104347681A 半导体设置及其制造方法 Setting and manufacturing method of semiconductor |
| 02/11/2015 | CN104347636A 半导体存储器件 A semiconductor memory device |
| 02/11/2015 | CN104347628A 功率半导体器件及其制作方法 Power semiconductor devices and manufacturing method thereof |
| 02/11/2015 | CN104347626A 包括控制电路的半导体器件 A semiconductor device including a control circuit |
| 02/11/2015 | CN104347598A 静电防护元件及其制造方法 ESD protection device and manufacturing method |
| 02/11/2015 | CN104347556A 二极管封装结构 Diode package structure |
| 02/11/2015 | CN104347553A 一种挖槽阻焊型igbt模块底板 One kind Trench solder type igbt module backplane |
| 02/11/2015 | CN104347523A 晶体管及其形成方法 Transistor and method of forming |
| 02/11/2015 | CN104347520A 非易失性存储器晶体管和包括该存储器晶体管的设备 Non-volatile memory device includes a transistor and the memory transistor |
| 02/11/2015 | CN104347509A Cmos器件制造方法及cmos器件 Cmos cmos device manufacturing method and device |
| 02/11/2015 | CN104347508A 半导体结构及其形成方法 And method of forming a semiconductor structure |
| 02/11/2015 | CN104347503A 一种半导体器件及其制造方法 A semiconductor device and manufacturing method thereof |
| 02/11/2015 | CN104347498A 薄膜晶体管、其制造方法及制造平板显示器背板的方法 A thin film transistor, a manufacturing method thereof and a method of manufacturing a flat panel display backplanes |
| 02/11/2015 | CN104347428A 制造半导体器件的方法及半导体器件 The method of manufacturing a semiconductor device and semiconductor device |
| 02/11/2015 | CN104347426A 形成用于晶体管的替换闸极结构的方法及其造成的装置 The method of forming the replacement gate structure for the transistor and the apparatus caused by |
| 02/11/2015 | CN104347424A 具有单元沟槽结构和接触点的半导体器件及其制造方法 Semiconductor device and manufacturing method of the trench structure and having a cell contact point |
| 02/11/2015 | CN104347420A Ldmos器件及其形成方法 Device and method for forming Ldmos |
| 02/11/2015 | CN104347416A 鳍式场效应晶体管及其形成方法 Fin field-effect transistor and method of forming |
| 02/11/2015 | CN104347415A 鳍式场效应晶体管及其形成方法 Fin field-effect transistor and method of forming |
| 02/11/2015 | CN104347413A 一种制作FinFET半导体器件的方法 A method of fabricating a semiconductor device FinFET |
| 02/11/2015 | CN104347412A Vvmos管的制作方法及vvmos管 Production methods Vvmos tube and pipe vvmos |