Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2014
01/30/2014US20140027886 Method of fabricating a device with a concentration gradient and the corresponding device
01/30/2014US20140027883 Interconnects and semiconductor devices including at least two portions of a metal nitride material and methods of fabrication
01/30/2014US20140027878 Self-aligned trench over fin
01/30/2014US20140027877 Semiconductor structure for antenna switching circuit and manufacturing method thereof
01/30/2014US20140027870 Magnetic memory and manufacturing method thereof
01/30/2014US20140027868 Mechanical quantity measuring device
01/30/2014US20140027867 Packages and methods for 3d integration
01/30/2014US20140027865 Mosfet gate and source/drain contact metallization
01/30/2014US20140027864 Semiconductor devices and methods for manufacturing the same
01/30/2014US20140027863 Merged fin finfet with (100) sidewall surfaces and method of making same
01/30/2014US20140027857 Semiconductor device and method of manufacturing the same
01/30/2014US20140027854 Fluctuation Resistant FDSOI Transistor with Implanted Subchannel
01/30/2014US20140027853 Fluctuation Resistant Low Access Resistance Fully Depleted SOI Transistor with Improved Channel Thickness Control and Reduced Access Resistance
01/30/2014US20140027852 Semiconductor Device and Method for Manufacturing the Same
01/30/2014US20140027850 Ldmos device with step-like drift region and fabrication method thereof
01/30/2014US20140027849 Ldmos device and method for improved soa
01/30/2014US20140027848 Lateral Semiconductor Device and Manufacturing Method Therefor
01/30/2014US20140027847 Semiconductor device
01/30/2014US20140027846 Semiconductor device
01/30/2014US20140027845 Semiconductor device
01/30/2014US20140027844 Semiconductor device and method of fabricating the same
01/30/2014US20140027843 Techniques Providing High-K Dielectric Metal Gate CMOS
01/30/2014US20140027842 Power semiconductor device
01/30/2014US20140027841 High voltage field balance metal oxide field effect transistor (fbm)
01/30/2014US20140027840 Termination design for high voltage device
01/30/2014US20140027837 Transistor with self-aligned terminal contacts
01/30/2014US20140027835 Semiconductor device and method for manufacturing the same
01/30/2014US20140027834 Shallow trench isolation for a memory
01/30/2014US20140027832 Forming air gaps in memory arrays and memory arrays with air gaps thus formed
01/30/2014US20140027825 Threshold voltage adjustment in a fin transistor by corner implantation
01/30/2014US20140027824 SEMICONDUCTOR DEVICES (as amended)
01/30/2014US20140027823 Method for forming thin metal compound film and semiconductor structure with thin metal compound film
01/30/2014US20140027822 Copper Contact Plugs with Barrier Layers
01/30/2014US20140027821 Device performance enhancement
01/30/2014US20140027820 Forming facet-less epitaxy with self-aligned isolation
01/30/2014US20140027818 Gate Recessed FDSOI Transistor with Sandwich of Active and Etch Control Layers
01/30/2014US20140027816 High mobility strained channels for fin-based transistors
01/30/2014US20140027814 Power Device and a Reverse Conducting Power IGBT
01/30/2014US20140027813 Method of forming a semiconductor device having a patterned gate dielectric and structure therefor
01/30/2014US20140027812 Semiconductor Device Including a Dielectric Structure in a Trench
01/30/2014US20140027793 Active matrix substrate, electro-optical device, and electronic device
01/30/2014US20140027788 Electrical conductor
01/30/2014US20140027787 Sic single crystal, sic wafer, and semiconductor device
01/30/2014US20140027784 Silicon carbide semiconductor device
01/30/2014US20140027782 Semiconductor device and method for reduced bias temperature instability (bti) in silicon carbide devices
01/30/2014US20140027781 Monolithic bidirectional silicon carbide switching devices and methods of forming the same
01/30/2014US20140027779 High electron mobility transistor
01/30/2014US20140027778 Robust Fused Transistor
01/30/2014US20140027777 Growing of gallium-nitrade layer on silicon substrate
01/30/2014US20140027776 Transistor and Method of Manufacturing a Transistor
01/30/2014US20140027773 Semiconductor Device Including a Diode and Method of Manufacturing a Semiconductor Device
01/30/2014US20140027772 Wafers and Chips Comprising Test Structures
01/30/2014US20140027770 Semiconductor laminate and process for production thereof, and semiconductor element
01/30/2014US20140027767 Semiconductor Element, Semiconductor Device, And Method For Manufacturing The Same
01/30/2014US20140027766 METHOD FOR PRODUCING P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER, METHOD FOR PRODUCING ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR SINGLE CRYSTAL LAYER, ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND N-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAMINATE STRUCTURE
01/30/2014US20140027763 Thin film transistor substrate and display device having the thin film transistor substrate
01/30/2014US20140027762 Semiconductor device
01/30/2014US20140027761 Thin film transistor substrate, display thereof and manufacturing method thereof
01/30/2014US20140027760 Semiconductor device and manufacturing method thereof
01/30/2014US20140027758 Multi-gate thin-film transistor
01/30/2014US20140027717 Pixel control structure, array, backplane, display, and method of manufacturing
01/30/2014US20140027715 P-type graphene base transistor
01/30/2014US20140027710 Quantum dot and nanowire synthesis
01/30/2014US20140027708 Photonic integrated circuits based on quantum cascade structures
01/30/2014US20140026670 Method of compensating for effects of mechanical stresses in a microcircuit
01/30/2014DE112012001855T5 Komplementärer bipolarer Inverter Complementary bipolar inverter
01/30/2014DE112012001822T5 Siliciumgesteuerter Gleichrichter mit anpassbarer Auslösespannung mit Verspannungsunterstützung Silicon-controlled rectifier with adjustable trigger voltage with bracing support
01/30/2014DE112012001453T5 Siliziumkarabidsubstrat Siliziumkarabidsubstrat
01/30/2014DE112012000601T5 Verfahren zum Herstellen einer Halbleitervorrichtung sowie Halbleitervorrichtung A method of manufacturing a semiconductor device and semiconductor device
01/30/2014DE102013107956A1 Laterale Halbleitervorrichtung und Verfahren zu ihrer Herstellung Lateral semiconductor device and process for their preparation
01/30/2014DE102013107761A1 Halbleitervorrichtung mit einer Diode und Verfahren zum Herstellen einer Halbleitervorrichtung A semiconductor device comprising a diode and method of manufacturing a semiconductor device
01/30/2014DE102013107758A1 Halbleitervorrichtung mit einer dielektrischen Struktur in einem Trench A semiconductor device having a dielectric structure in a trench
01/30/2014DE102012213077A1 Verfahren zum Kontaktieren eines Halbleitermaterials mit einer Kontaktlage A method for contacting a semiconductor material with a contact position
01/30/2014CA2822132A1 Semiconductor device and method for reduced bias temperature instability (bti) in silicon carbide devices
01/29/2014EP2690665A1 Single-charge transistor
01/29/2014EP2690664A1 Transistors and methods of manufacturing the same
01/29/2014EP2690657A2 Robust fuse-protected transistor
01/29/2014EP2690654A2 Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, p-type ZnO based compound semiconductor single crystal layer, ZnO based compound semiconductor element, and n-type ZnO based compound semiconductor laminate structure
01/29/2014EP2690418A1 Pressure sensor having flexible diaphragm with active circuit components thereon
01/29/2014EP2689461A1 High-voltage mems apparatus and method
01/29/2014EP2689460A2 Transistor device and materials for making
01/29/2014EP2689459A2 Structures and methods relating to graphene
01/29/2014EP2689451A1 P-/metal floating gate non-volatile storage element
01/29/2014CN203415585U Groove-type IGBT device
01/29/2014CN203415584U A grid-controlled diode, a battery charging assembly, and a power generator assembly
01/29/2014CN203415583U High voltage NPN device
01/29/2014CN203415582U NPN-type power transistor
01/29/2014CN203415581U Thyristor chip with high current increasing rate
01/29/2014CN203415580U Electrode structure of power semiconductor chip
01/29/2014CN203415553U Semiconductor structure
01/29/2014CN103548263A 半导体装置 Semiconductor device
01/29/2014CN103548166A Method for producing protein semiconductor
01/29/2014CN103548147A Lateral semiconductor device
01/29/2014CN103548146A Dual active layers for semiconductor devices and methods of manufacturing the same
01/29/2014CN103548145A Semiconductor device and method for manufacturing semiconductor device
01/29/2014CN103548144A Silicon carbide semiconductor device and method for manufacturing same
01/29/2014CN103548143A Silicon carbide semiconductor device and method for manufacturing same
01/29/2014CN103548142A Semiconductor element, semiconductor device, and semiconductor element manufacturing method
01/29/2014CN103548141A Encoded packet selection from a first voice stream to create a second voice stream
01/29/2014CN103548139A Apparatus for electrostatic discharge protection