Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2014
02/05/2014CN203423190U Surface-mounted diode
02/05/2014CN203423189U Film transistor, array substrate and display device
02/05/2014CN203423188U Thin film transistor, array substrate and display device
02/05/2014CN203423187U Thin film transistor, array substrate, and display device
02/05/2014CN203423186U Improved groove type gate associated?transistor with integration of BE junction and resistor
02/05/2014CN203423185U Silicon carbide semiconductor device
02/05/2014CN203423181U Oxide semiconductor thin-film transistor substrate
02/05/2014CN103563087A Recessed termination structures and methods of fabricating electronic devices including recessed termination structures
02/05/2014CN103563086A Low-profile local interconnect and method of making the same
02/05/2014CN103563085A Vertical tunneling negative differential resistance devices
02/05/2014CN103563084A Array of quantum systems in cavity for quantum computing
02/05/2014CN103563083A Semiconductor switching device and method of making the same
02/05/2014CN103563069A Semiconductor device, semiconductor substrate, method for producing semiconductor substrate, and method for producing semiconductor device
02/05/2014CN103563068A Semiconductor device, semiconductor substrate, method for producing semiconductor substrate, and method for producing semiconductor device
02/05/2014CN103563060A Switching element
02/05/2014CN103563059A Method and structure for low resistive source and drain regions in a replacement metal gate process flow
02/05/2014CN103563058A 半导体器件 Semiconductor devices
02/05/2014CN103563052A Method for fabricating electrode structure having nanogap length, electrode structure having nanogap length obtained thereby, and nanodevice
02/05/2014CN103560153A Tunneling field effect transistor and preparation method thereof
02/05/2014CN103560152A Tunneling field effect transistor of vertical structure and preparation method thereof
02/05/2014CN103560151A Super-junction VDMOS of optimized body diode reversed recovery feature and manufacturing method
02/05/2014CN103560150A Metal gate transistors with epitaxial source and drain regions
02/05/2014CN103560149A 绝缘栅双极型晶体管及其制造方法 Insulated gate bipolar transistor and its manufacturing method
02/05/2014CN103560148A Junction terminal structure of super junction device and manufacturing method of super junction device
02/05/2014CN103560147A Nitrogen and phosphorus zinc oxide thin film, preparation method thereof and thin film transistor
02/05/2014CN103560146A Epitaxy structure for manufacturing GaN hetero-junction filed-effect transistor and growing method thereof
02/05/2014CN103560145A Structure of SOI power device with interface grating
02/05/2014CN103560144A Method and corresponding device for restraining tunneling transistor from leaking current and method for manufacturing corresponding device
02/05/2014CN103560143A Automobile rectification chip and method for manufacturing rectification base material thereof
02/05/2014CN103560142A Semiconductor laminate, semiconductor device and manufacturing method thereof
02/05/2014CN103560114A TFT array substrate, manufacturing method thereof and display device
02/05/2014CN103560112A Method for manufacturing thin film transistor substrate and thin film transistor substrate manufactured through same
02/05/2014CN103560111A Method for manufacturing array substrate, array substrate and display device
02/05/2014CN103560110A Array substrate and preparation method and display device thereof
02/05/2014CN103560087A 4H-SiC Schottky barrier source/drain MOSFET device with field plate terminal protection and manufacturing method thereof
02/05/2014CN103560085A Semiconductor device and manufacturing method thereof
02/05/2014CN103558254A Biosensor based on vertical-structure tunneling field effect transistor and preparation method thereof
02/05/2014CN102544093B Semiconductor field effect structure and preparation method and application thereof
02/05/2014CN102446752B Method for forming side wall and storage unit formed thereby
02/05/2014CN102386217B 栅极堆叠结构及其制作方法 The gate stack structure and manufacturing method thereof
02/05/2014CN102280493B 半导体装置 Semiconductor device
02/05/2014CN101521180B Semiconductor device and manufacturing method of same
02/05/2014CN101017643B Light emitting device and method of driving same
02/04/2014US8643636 Active matrix display device
02/04/2014US8643345 Combined semiconductor rectifying device and the electric power converter using the same
02/04/2014US8643196 Structure and method for bump to landing trace ratio
02/04/2014US8643195 Nickel tin bonding system for semiconductor wafers and devices
02/04/2014US8643192 Integrated circuit package with discrete components surface mounted on exposed side
02/04/2014US8643191 On-chip radial cavity power divider/combiner
02/04/2014US8643190 Through substrate via including variable sidewall profile
02/04/2014US8643187 On-chip interconnects VIAS and method of fabrication
02/04/2014US8643184 Crosstalk polarity reversal and cancellation through substrate material tuning
02/04/2014US8643183 Long-term heat-treated integrated circuit arrangements and methods for producing the same
02/04/2014US8643181 Integrated circuit packaging system with encapsulation and method of manufacture thereof
02/04/2014US8643180 Semiconductor device
02/04/2014US8643152 Double trench rectifier
02/04/2014US8643146 Semiconductor device
02/04/2014US8643145 Semiconductor device
02/04/2014US8643144 Metal-on-passivation resistor for current sensing in a chip-scale package
02/04/2014US8643143 Semiconductor device and method of fabricating the same
02/04/2014US8643138 High breakdown voltage integrated circuit isolation structure
02/04/2014US8643137 Short channel lateral MOSFET
02/04/2014US8643136 High voltage device and manufacturing method thereof
02/04/2014US8643135 Edge termination configurations for high voltage semiconductor power devices
02/04/2014US8643134 GaN-based Schottky barrier diode with field plate
02/04/2014US8643130 Magnetic stack and memory cell comprising such a stack
02/04/2014US8643129 MEMS device
02/04/2014US8643128 Micro-electro-mechanical-system sensor and method for making same
02/04/2014US8643127 Sensor device packaging
02/04/2014US8643126 Self aligned silicided contacts
02/04/2014US8643125 Structure and process for microelectromechanical system-based sensor
02/04/2014US8643122 Silicide contacts having different shapes on regions of a semiconductor device
02/04/2014US8643119 Substantially L-shaped silicide for contact
02/04/2014US8643114 Semiconductor device and electronic apparatus
02/04/2014US8643111 Electrostatic discharge (ESD) protection device
02/04/2014US8643110 Localized biasing for silicon on insulator structures
02/04/2014US8643104 Lateral diffusion metal oxide semiconductor transistor structure
02/04/2014US8643103 Semiconductor device including gate contact region and protruding gate electrode
02/04/2014US8643102 Control device of semiconductor device
02/04/2014US8643101 High voltage metal oxide semiconductor device having a multi-segment isolation structure
02/04/2014US8643100 Field effect transistor having multiple effective oxide thicknesses and corresponding multiple channel doping profiles
02/04/2014US8643099 Integrated lateral high voltage MOSFET
02/04/2014US8643098 Method for fabricating semiconductor device with side contact
02/04/2014US8643097 Trench-gate metal oxide semiconductor device and fabricating method thereof
02/04/2014US8643096 Semiconductor device with buried bit line and method for fabricating the same
02/04/2014US8643095 Semiconductor transistor device and method for manufacturing same
02/04/2014US8643094 Method of forming a self-aligned contact opening in MOSFET
02/04/2014US8643092 Shielded trench MOSFET with multiple trenched floating gates as termination
02/04/2014US8643091 Semiconductor device
02/04/2014US8643090 Semiconductor devices and methods for manufacturing a semiconductor device
02/04/2014US8643089 Semiconductor device and fabricating method thereof
02/04/2014US8643088 Semiconductor device and method for forming the same
02/04/2014US8643087 Reduced leakage memory cells
02/04/2014US8643086 Semiconductor component with high breakthrough tension and low forward resistance
02/04/2014US8643085 High-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structure
02/04/2014US8643084 Vertical non-volatile memory device
02/04/2014US8643083 Electronic devices with ultraviolet blocking layers
02/04/2014US8643082 Thickened sidewall dielectric for memory cell
02/04/2014US8643081 Semiconductor memory device
02/04/2014US8643080 Three-dimensional semiconductor memory device