| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/22/2014 | EP2688094A1 Sensor package |
| 01/22/2014 | EP2687902A1 Quantum rod light-emitting display device |
| 01/22/2014 | EP2686888A1 Mechanically stable device based on nano/micro wires and having improved optical properties and process for producing it |
| 01/22/2014 | EP2686885A1 Semiconductor device |
| 01/22/2014 | EP2686884A1 Functional integration of dilute nitrides into high efficiency iii-v solar cells |
| 01/22/2014 | EP2686876A1 Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
| 01/22/2014 | CN203406293U A metallic oxide thin-film transistor memory device |
| 01/22/2014 | CN203406292U High-reverse-voltage bipolar power transistor |
| 01/22/2014 | CN203406291U Bipolar power transistor |
| 01/22/2014 | CN203406290U High-reverse-voltage power transistor |
| 01/22/2014 | CN203406289U Bipolar power transistor |
| 01/22/2014 | CN203406288U Bipolar transistor with improved BVcbo (collector-base breakdown voltage) |
| 01/22/2014 | CN103534945A An apparatus and method for introducing a controllable delay to an input signal |
| 01/22/2014 | CN103534830A 有机半导体材料 The organic semiconductor material |
| 01/22/2014 | CN103534812A 半导体装置 Semiconductor device |
| 01/22/2014 | CN103534811A Semiconductor device and method for manufacturing semiconductor device |
| 01/22/2014 | CN103534810A Semiconductor device and method for producing same |
| 01/22/2014 | CN103534809A Semiconductor device and method for manufacturing semiconductor device |
| 01/22/2014 | CN103534806A Overvoltage and/or electrostatic discharge protection device |
| 01/22/2014 | CN103534793A Select devices |
| 01/22/2014 | CN103534792A Process for producing semiconductor device and semiconductor device |
| 01/22/2014 | CN103531642A Schottky device provided with groove terminal structures and preparation method thereof |
| 01/22/2014 | CN103531641A A thin-film transistor and a manufacturing method thereof |
| 01/22/2014 | CN103531640A Thin film transistor, array substrate, manufacturing method of array substrate and display device |
| 01/22/2014 | CN103531639A Thin film transistor, preparation method of thin film transistor, array substrate and display device |
| 01/22/2014 | CN103531638A Thin-film transistor and zinc oxide-based sputtering target for the same |
| 01/22/2014 | CN103531637A 晶体管与其制造方法 Transistor and its manufacturing method |
| 01/22/2014 | CN103531636A Source-grid-drain common-controlled single-doped type TFET (tunneling field effect transistor) |
| 01/22/2014 | CN103531635A Nanowire based vertical circular grating transistor and preparation method thereof |
| 01/22/2014 | CN103531634A Solid-state bidirectional switch having a first and a second power-FET |
| 01/22/2014 | CN103531633A Drain extended mos device for bulk finfet technology |
| 01/22/2014 | CN103531632A Semiconductor device including an edge area and method of manufacturing the semiconductor device |
| 01/22/2014 | CN103531631A Semiconductor device and driver circuit with a current carrying region and isolation structure interconnected through a resistor circuit, and method of manufacture thereof |
| 01/22/2014 | CN103531630A 高击穿电压ldmos器件 High breakdown voltage ldmos devices |
| 01/22/2014 | CN103531629A Apparatus and method for MOS transistor |
| 01/22/2014 | CN103531628A Groove Schottky MOS semiconductor device and preparation method thereof |
| 01/22/2014 | CN103531627A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/22/2014 | CN103531626A Adjustable constant-current tube based on two-dimensional electron gas |
| 01/22/2014 | CN103531625A Nitride-based compound semiconductor device |
| 01/22/2014 | CN103531624A Stress-controlled HEMT |
| 01/22/2014 | CN103531623A Semiconductor nano-structure based transistor device and preparation method thereof |
| 01/22/2014 | CN103531622A High-voltage fast thyristor |
| 01/22/2014 | CN103531621A Non-punch-through type insulated gate bipolar transistor with side polysilicon electrode trench |
| 01/22/2014 | CN103531620A Insulated gate bipolar translator (IGBT) chip based on N-type injection layers and manufacturing method thereof |
| 01/22/2014 | CN103531619A Lateral insulated gate bipolar transistor structure with low parasitic bjt gain and stable threshold voltage |
| 01/22/2014 | CN103531618A Double-gate fin-type field effect transistor and manufacturing method thereof |
| 01/22/2014 | CN103531617A Schottky device provided with groove terminal structures and preparation method thereof |
| 01/22/2014 | CN103531616A Groove-type fast recovery diode and manufacturing method thereof |
| 01/22/2014 | CN103531615A 氮化物功率晶体管及其制造方法 Nitride power transistor and its manufacturing method |
| 01/22/2014 | CN103531614A 电荷补偿半导体器件 Charge compensation of semiconductor devices |
| 01/22/2014 | CN103531613A Semiconductor device and method for producing a doped semiconductor layer |
| 01/22/2014 | CN103531612A 半导体器件 Semiconductor devices |
| 01/22/2014 | CN103531611A Super junction semiconductor device comprising a cell area and an edge area |
| 01/22/2014 | CN103531595A Low-temperature polycrystalline silicon transistor array substrate and manufacturing method thereof, as well as display device |
| 01/22/2014 | CN103531594A Array substrate and display device |
| 01/22/2014 | CN103531592A Tri-gate control type no-junction transistor with high mobility and low source/drain resistance |
| 01/22/2014 | CN103531591A Thin film transistor substrate having metal oxide and manufacturing method thereof |
| 01/22/2014 | CN103531588A III-V compound having a semiconductor device and a manufacturing method of the metal contact member |
| 01/22/2014 | CN103531587A 半导体装置 Semiconductor device |
| 01/22/2014 | CN103531586A Power semiconductor device and manufacturing method thereof |
| 01/22/2014 | CN103531545A Gallium-nitride element capable of restoring performance |
| 01/22/2014 | CN103531481A Passage partial pressure field-effect transistor on basis of channel mode and production method |
| 01/22/2014 | CN103531480A Semiconductor device and driver circuit with drain and isolation structure, and method of manufacture thereof |
| 01/22/2014 | CN103531479A Semiconductor device and method of manufacturing a transistor having a vertical channel |
| 01/22/2014 | CN103531478A Multi-Gate FETs and methods for forming the same |
| 01/22/2014 | CN103531477A FinFET method and structure with embedded underlying anti-punch through layer |
| 01/22/2014 | CN103531475A Semiconductor device and manufacturing method therefor |
| 01/22/2014 | CN103531472A MOSFET and preparation method thereof |
| 01/22/2014 | CN103531471A MOSFET and preparation method thereof |
| 01/22/2014 | CN103531470A Semiconductor device and method for manufacturing the same |
| 01/22/2014 | CN103531468A MOS transistor and manufacturing method thereof |
| 01/22/2014 | CN103531467A Semiconductor device and forming method thereof |
| 01/22/2014 | CN103531455A Semiconductor device and manufacturing method therefor |
| 01/22/2014 | CN103531453A 半导体集成器件及其制作方法 The semiconductor integrated device and manufacturing method thereof |
| 01/22/2014 | CN103531450A Method for forming laterally varying doping concentrations and a semiconductor device |
| 01/22/2014 | CN103529108A Gas sensor and method for manufacturing the gas sensor |
| 01/22/2014 | CN103527381A Single chip igniter and internal combustion engine ignition device |
| 01/22/2014 | CN102893315B 有源矩阵基板和显示面板 The active matrix substrate and a display panel |
| 01/22/2014 | CN102468339B Active element and method for manufacturing the same |
| 01/22/2014 | CN102468334B VDMOS (Vertical Double-diffusion Metal Oxide Semiconductor Structure) device and manufacturing method thereof |
| 01/22/2014 | CN102318072B 半导体器件 Semiconductor devices |
| 01/22/2014 | CN102254952B Stacked capacitor for double-poly flash memory and manufacture method thereof |
| 01/22/2014 | CN102227678B Liquid crystal display device and method for manufacturing liquid crystal display device tft substrate |
| 01/22/2014 | CN102194879B 半导体装置 Semiconductor device |
| 01/22/2014 | CN102177573B Semiconductor devices having faceted silicide contacts, and related fabrication methods |
| 01/22/2014 | CN101872779B Image display system and manufacturing method thereof |
| 01/22/2014 | CN101783365B Transistor with wire source and drain |
| 01/21/2014 | USRE44720 Method of manufacturing a MOSFET structure |
| 01/21/2014 | US8634266 Semiconductor device |
| 01/21/2014 | US8634236 Phase change memory device, storage system having the same and fabricating method thereof |
| 01/21/2014 | US8634036 Transflective liquid crystal display device with barrier metal layer between ohmic-contact layer and source/drain electrode patterns and fabrication method thereof |
| 01/21/2014 | US8633600 Device and method for manufacturing a device |
| 01/21/2014 | US8633598 Underfill contacting stacking balls package fabrication method and structure |
| 01/21/2014 | US8633597 Thermal vias in an integrated circuit package with an embedded die |
| 01/21/2014 | US8633596 Semiconductor package with bonding wires of reduced loop inductance |
| 01/21/2014 | US8633595 Semiconductor device having groove-shaped via-hole |
| 01/21/2014 | US8633594 Semiconductor device having groove-shaped via-hole |
| 01/21/2014 | US8633591 Electronic device |
| 01/21/2014 | US8633576 Stacked chip-on-board module with edge connector |
| 01/21/2014 | US8633573 Strained semiconductor materials, devices and methods therefore |