| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/29/2014 | CN103548133A Semiconductor device, semiconductor substrate, production method for semiconductor substrate, and production method for semiconductor device |
| 01/29/2014 | CN103548132A Method for producing semiconductor device |
| 01/29/2014 | CN103548127A Semiconductor device and method for manufacturing same |
| 01/29/2014 | CN103548126A Method for producing semiconductor substrate and semiconductor substrate |
| 01/29/2014 | CN103548125A Method for producing semiconductor device, and semiconductor device |
| 01/29/2014 | CN103548118A Production method for semiconductor device |
| 01/29/2014 | CN103545407A Leakage current prevention structure and manufacturing method thereof |
| 01/29/2014 | CN103545383A MOS capacitor, method of fabricating the same, and semiconductor device using the same |
| 01/29/2014 | CN103545382A Junction-barrier controlled Schottky diode and manufacturing method thereof |
| 01/29/2014 | CN103545381A Grooved Schottky semiconductor device with horizontal structure and method for manufacturing grooved Schottky semiconductor device |
| 01/29/2014 | CN103545380A Thin film transistor and producing method |
| 01/29/2014 | CN103545379A Thin film transistor, pixel unit, array substrate and display device |
| 01/29/2014 | CN103545378A Oxide thin film transistor, manufacturing method thereof, array substrate and display device |
| 01/29/2014 | CN103545377A Oxide thin film transistor and manufacturing method thereof |
| 01/29/2014 | CN103545376A Thin-film transistor, electronic circuit, display and method of manufacturing the same |
| 01/29/2014 | CN103545375A Undoped field effect transistor with near source gate and near drain gate separately controlled |
| 01/29/2014 | CN103545374A 半导体器件 Semiconductor devices |
| 01/29/2014 | CN103545373A Semiconductor device and method for fabricating the same |
| 01/29/2014 | CN103545372A FinFET with trench field plate |
| 01/29/2014 | CN103545371A Apparatus and method for power MOS transistor |
| 01/29/2014 | CN103545370A Apparatus and method for power mos transistor |
| 01/29/2014 | CN103545369A Power semiconductor device and fabrication method thereof |
| 01/29/2014 | CN103545368A Trench gate MOSFET |
| 01/29/2014 | CN103545367A Semiconductor structure and formation method thereof |
| 01/29/2014 | CN103545366A Semiconductor device and production method thereof |
| 01/29/2014 | CN103545365A High-voltage NLDMOS (N-type laterally diffused metal oxide semiconductor) structure for electrostatic protection |
| 01/29/2014 | CN103545364A Small-size MOSFET(metal-oxide semiconductor field effect transistor) structure of self-alignment hole and manufacturing method |
| 01/29/2014 | CN103545363A P-type high-voltage Metal Oxide Semiconductor (LDMOS) device and production method thereof |
| 01/29/2014 | CN103545362A Compound semiconductor device and method of manufacturing the same |
| 01/29/2014 | CN103545361A Compound semiconductor device, method for producing the same, power-supply unit, and high-frequency amplifier |
| 01/29/2014 | CN103545360A High electron mobility transistor and method of forming the same |
| 01/29/2014 | CN103545359A Single-electron transistor core structure preparation method and single-electron transistor core structure |
| 01/29/2014 | CN103545358A Bipolar transistor with high breakdown voltage |
| 01/29/2014 | CN103545357A Bipolar junction transistor |
| 01/29/2014 | CN103545356A Novel metal/polysilicon gate trench power MOSFET |
| 01/29/2014 | CN103545355A 半导体器件及其制作方法 Semiconductor device and manufacturing method thereof |
| 01/29/2014 | CN103545354A Power transistor |
| 01/29/2014 | CN103545353A Electrode heating pole and processing technique thereof |
| 01/29/2014 | CN103545352A 半导体器件 Semiconductor devices |
| 01/29/2014 | CN103545351A Semiconductor device and method of fabricating the same |
| 01/29/2014 | CN103545350A Method for manufacturing transverse high-voltage device drift region |
| 01/29/2014 | CN103545349A Current sense transistor with embedding of sense transistor cells |
| 01/29/2014 | CN103545348A Diffusion barrier layer for group III nitride on silicon substrate |
| 01/29/2014 | CN103545347A IGBT (insulated gate bipolar transistor) structure with built-in diodes and method for manufacturing IGBT structure |
| 01/29/2014 | CN103545346A Isolated N-type LDMOS (laterally diffused metal oxide semiconductor) device and manufacturing method thereof |
| 01/29/2014 | CN103545321A Display substrate and flexible display device with display substrate |
| 01/29/2014 | CN103545320A Display substrate and flexible display device with display substrate |
| 01/29/2014 | CN103545319A Low-temperature polycrystalline silicon thin film transistor array substrate, manufacturing method thereof and display device |
| 01/29/2014 | CN103545318A 半导体装置及其制造方法 Semiconductor device and manufacturing method |
| 01/29/2014 | CN103545252A Array substrate and manufacturing method thereof and liquid crystal display device |
| 01/29/2014 | CN103545242A Sealed shallow trench isolation region and forming method thereof |
| 01/29/2014 | CN103545221A Metallic oxide thin film transistor and preparation method thereof |
| 01/29/2014 | CN103545220A Method for manufacturing drifting region of transverse power device |
| 01/29/2014 | CN103545218A Pocket counterdoping for gate-edge diode leakage reduction |
| 01/29/2014 | CN103545215A Semiconductor device and production method thereof |
| 01/29/2014 | CN103545213A Semiconductor device and production method thereof |
| 01/29/2014 | CN103545210A Deeply depleted channel field effect transistor and manufacturing method thereof |
| 01/29/2014 | CN103545206A Metal Oxide Semiconductor (MOS) device and forming method thereof |
| 01/29/2014 | CN103545204A Production method of P-channel Metal Oxide Semiconductor (PMOS) transistor |
| 01/29/2014 | CN103545202A P-channel Metal Oxide Semiconductor (PMOS) transistor and forming method thereof |
| 01/29/2014 | CN103545200A Transistor and formation method of same |
| 01/29/2014 | CN103545192A Semiconductor structure and method for manufacturing nonvolatile semiconductor structure |
| 01/29/2014 | CN103545191A Gate structure forming method, semiconductor device forming method and semiconductor device |
| 01/29/2014 | CN103545190A Gate structure forming method, semiconductor device forming method and semiconductor device |
| 01/29/2014 | CN103545189A Gate structure, semiconductor device and forming method of both |
| 01/29/2014 | CN103545184A Metal gate, forming method thereof and CMOS (complementary metal oxide semiconductor) transistor |
| 01/29/2014 | CN103545183A Complementary Metal-Oxide-Semiconductor (CMOS) device and production method thereof |
| 01/29/2014 | CN103545179A Semiconductor device and forming method thereof |
| 01/29/2014 | CN103545170A Semiconductor device and production method thereof |
| 01/29/2014 | CN103543566A Pixel structure and fabrication method thereof |
| 01/29/2014 | CN102544067B Bidirectional controllable silicon device based on assistant triggering of N-channel metal oxide semiconductor (NMOS) tubes |
| 01/29/2014 | CN102496629B Floating-gate-type flash memory taking electric inductive variable shallow junction as source/drain area |
| 01/29/2014 | CN102456686B 静电放电保护电路 Electrostatic discharge protection circuit |
| 01/29/2014 | CN102446952B Semiconductor structure and formation method thereof |
| 01/29/2014 | CN102422449B Organic semiconductor material, organic semiconductor thin film, and organic thin-film transistor |
| 01/29/2014 | CN102299168B 功率用半导体装置 Power semiconductor device |
| 01/29/2014 | CN102272932B Semiconductor device |
| 01/29/2014 | CN102272905B Semiconductor device and method for fabricating the same |
| 01/29/2014 | CN102270607B Manufacturing method of grid stack and semiconductor device |
| 01/29/2014 | CN102184891B Intelligent label, its fabrication method and management process of the goods with the same |
| 01/29/2014 | CN102171800B Semiconductor device and method for manufacturing same |
| 01/29/2014 | CN102110651B Semiconductor device and manufacturing method thereof |
| 01/29/2014 | CN101901858B Vertical structure semiconductor devices |
| 01/29/2014 | CN101626021B Semiconductor device including driving transistors |
| 01/29/2014 | CN101399291B Nonvolatile semiconductor memory device |
| 01/28/2014 | USRE44730 Method of manufacturing a MOSFET structure |
| 01/28/2014 | US8640072 Method for forming an electrical connection between metal layers |
| 01/28/2014 | US8639855 Information collection and storage for single core chips to 'N core chips |
| 01/28/2014 | US8638589 Operating method for non-volatile memory unit |
| 01/28/2014 | US8638382 Solid-state imaging device and electronic apparatus |
| 01/28/2014 | US8637999 Low-noise flip-chip packages and flip chips thereof |
| 01/28/2014 | US8637996 Perforation patterned electrical interconnects |
| 01/28/2014 | US8637995 Bonded semiconductor structures including two or more processed semiconductor structures carried by a common substrate |
| 01/28/2014 | US8637994 Microfeature workpieces having alloyed conductive structures, and associated methods |
| 01/28/2014 | US8637993 3D integrated circuit system with connecting via structure and method for forming the same |
| 01/28/2014 | US8637988 Semiconductor device and method of testing the same |
| 01/28/2014 | US8637987 Semiconductor assemblies with multi-level substrates and associated methods of manufacturing |
| 01/28/2014 | US8637986 Semiconductor device and method for manufacturing thereof |
| 01/28/2014 | US8637968 Stacked microelectronic assembly having interposer connecting active chips |
| 01/28/2014 | US8637966 Semiconductor device |