Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2003
08/14/2003WO2003067644A1 Homoepitaxial layers of p-type zinc oxide and the fabrication thereof
08/14/2003WO2003067640A2 Method for the production of a memory cell and structure thereof
08/14/2003WO2003067639A2 Method for producing a memory cell
08/14/2003WO2003067633A2 Programmable resistance memory element and method for making same
08/14/2003WO2003067629A2 Band gap compensated hbt
08/14/2003WO2003067333A1 Photo-sensitive composition
08/14/2003WO2003065926A2 Wearable biomonitor with flexible thinned integrated circuit
08/14/2003WO2003052799A3 A method of forming differential spacers for individual optimization of n-channel and p-channel transistors
08/14/2003WO2003032397A3 INSULTING GATE AlGaN/GaN HEMT
08/14/2003WO2003025977A3 Method for wrapped-gate mosfet
08/14/2003WO2003007397A3 Solution influenced alignment
08/14/2003WO2002082546A3 Overvoltage protection device
08/14/2003WO2002043155A9 Bipolar transistor with lattice matched base layer
08/14/2003WO2002033753A3 Integrated circuit provided with overvoltage protection and method for manufacture thereof
08/14/2003WO2002025705A3 Quantum dot devices
08/14/2003US20030153198 Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates
08/14/2003US20030153182 Laser irradiation apparatus
08/14/2003US20030153178 Method of fabricating a vertically profiled electrode and semiconductor device comprising such an electrode
08/14/2003US20030153172 Method of manufacturing a semiconductor integrated circuit device
08/14/2003US20030153170 Method for cleaning semiconductor device and method for fabricating the same
08/14/2003US20030153166 Transistor and method of making the same
08/14/2003US20030153161 Strained si based layer made by uhv-cvd, and devices therein
08/14/2003US20030153158 Method for increasing area of a trench capacitor
08/14/2003US20030153157 Low energy ion implantation into SiGe
08/14/2003US20030153155 Fet having epitaxial silicon growth
08/14/2003US20030153154 Manufacturing method of semiconductor device
08/14/2003US20030153151 Memory device with quantum dot and method for manufacturing the same
08/14/2003US20030153143 Electroless deposition of doped noble metals and noble metal alloys
08/14/2003US20030153139 Method to fabricate a single gate with dual work-functions
08/14/2003US20030153136 Method of manufacturing semicontor device having trench isolation
08/14/2003US20030153118 Polysilicon fet built on silicon carbide diode substrate
08/14/2003US20030153110 Thin film transistor substrate and method of manufacturing the same
08/14/2003US20030152691 Aperture mask patterns; elongated web of flexible film; integrated circuits
08/14/2003US20030152228 Single photon source based on transmitters with selectively distributed frequencies
08/14/2003US20030151948 Asymmetric band-gap engineered nonvolatile memory device
08/14/2003US20030151944 Magnetic switching element and a magnetic memory
08/14/2003US20030151360 Light-emitting device and method of manufacturing the same
08/14/2003US20030151358 Organic EL display device
08/14/2003US20030151119 Semiconductor device and method of manufacturing the same
08/14/2003US20030151118 Aperture masks for circuit fabrication
08/14/2003US20030151112 Semiconductor device having one of patterned SOI and SON structure
08/14/2003US20030151111 Method of and apparatus for integrating flash EPROM and SRAM cells on a common substrate
08/14/2003US20030151110 High-voltage lateral transistor with a multi-layered extended drain structure
08/14/2003US20030151109 Semiconductor integrated circuit device and a method of manufacturing the same
08/14/2003US20030151103 Pressing direction sensor and input device using the same
08/14/2003US20030151101 High-voltage transistor with multi-layer conduction region
08/14/2003US20030151099 Semiconductor device including multiple field effect transistors and manufacturing method thereof
08/14/2003US20030151097 Structure of semiconductor device and method for manufacturing the same
08/14/2003US20030151096 Semiconductor device
08/14/2003US20030151095 Thin film transistor array substrate for liquid crystal display and method for fabricating same
08/14/2003US20030151094 SOI MOS field effect transistor and manufacturing method therefor
08/14/2003US20030151093 High-voltage transistor with multi-layer conduction region
08/14/2003US20030151092 Power mosfet device with reduced snap-back and being capable of increasing avalanche-breakdown current endurance, and method of manafacturing the same
08/14/2003US20030151091 Method for fabricating a memory cell
08/14/2003US20030151090 Method of manufacturing power MOSFET device with reduced snap-back and being capable of increasing avalanche-breakdown current endurance
08/14/2003US20030151089 System for high-precision double-diffused MOS transistors
08/14/2003US20030151088 Lateral double diffused metal oxide semiconductor (LDMOS) device with aligned buried layer isolation layer
08/14/2003US20030151087 Avalanche behavior is improved
08/14/2003US20030151086 Semiconductor device
08/14/2003US20030151084 Cells of nonvolatile memory devices with floating gates and methods for fabricatng the same
08/14/2003US20030151083 Semiconductor device
08/14/2003US20030151080 Flash memory circuitry
08/14/2003US20030151077 Method of forming a vertical double gate semiconductor device and structure thereof
08/14/2003US20030151073 High dielectric constant materials forming components of DRAM such as deep-trench capacitors and gate dielectric (insulators) for support circuits
08/14/2003US20030151069 Semiconductor device and manufacturing method
08/14/2003US20030151068 Semiconductor memory
08/14/2003US20030151066 Heterojunction bipolar transistor with inGaAs contact and etch stop layer for InP sub-collector
08/14/2003US20030151065 Semiconductor element
08/14/2003US20030151064 Semiconductor device
08/14/2003US20030151063 Avoids deterioration in step coverage property at a gate electrode on an operating region, and decreases a leakage current between the operating region and the gate electrode; especially arranged as a high electron mobility transistor
08/14/2003US20030151050 Method of using a pinned photodiode five transistor pixel
08/14/2003US20030151049 Thin film transistor device and method of manufacturing the same
08/14/2003US20030151045 Superjunction device with improved avalanche capability and breakdown voltage
08/14/2003US20030151042 Polarization field enhanced tunnel structures
08/14/2003US20030151021 Wet etch for selectively removing a metal nitride extrusion comprising: an oxidizing agent; a chelating agent; and at least a portion of a metal nitride extrusion that results from the selective dissolution of the metal nitride
08/14/2003US20030150384 Aperture masks for circuit fabrication
08/14/2003US20030150383 Semiconductor device or thin-film transistor manufacturing apparatus and manufacturing method
08/14/2003US20030150269 Acceleration sensor
08/14/2003US20030150253 Microchemical component and balancing method
08/13/2003EP1335433A2 Memory device with quantum dot and method for manufacturing the same
08/13/2003EP1335432A1 CCD image sensor having a capacitance control gate for improved gain control and for reducing parasitic capacitance
08/13/2003EP1335419A2 Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device
08/13/2003EP1335418A1 Method of fabricating a T-shaped electrode and semiconductor device comprising such an electrode
08/13/2003EP1335241A2 Flat panel display using liquid crystal cells or organic electroluminescent elements and method of manufacturing the same
08/13/2003EP1335206A2 Acceleration sensor
08/13/2003EP1334541A2 Protective side wall passivation for vcsel chips
08/13/2003EP1334522A1 Semiconductor device with reduced line-to-line capacitance and cross talk noise
08/13/2003EP1334512A1 Fet with notched gate and method of manufacturing the same
08/13/2003EP1334060A1 Micromechanical component and corresponding production method
08/13/2003EP0708987B1 Semiconductor device provided with an organic semiconductor material
08/13/2003CN1436372A Semiconductor device and method of mfg. same
08/13/2003CN1436371A Trench MOSFET with double-diffused body profile
08/13/2003CN1436367A Method for mfg. semiconductor device and semiconductor device thereby
08/13/2003CN1436366A Silicon bipolar transistor, circuit arrangement and method for production of silicon bipolar transistor
08/13/2003CN1435897A Semiconductor device and method for mfg. same
08/13/2003CN1435896A Semiconductor device and mthod for mfg. same
08/13/2003CN1435895A 半导体元件结构 The semiconductor device structure
08/13/2003CN1435894A Organic LED device and mfg. method thereof
08/13/2003CN1435892A Semiconductor device and mfg. method thereof
08/13/2003CN1435891A Optical semiconductor integrated circuit device and mfg. method thereof
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