Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2003
08/26/2003US6611460 Nonvolatile semiconductor memory device and programming method thereof
08/26/2003US6611459 Non-volatile semiconductor memory device
08/26/2003US6611458 Semiconductor integrated circuit device
08/26/2003US6611447 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield
08/26/2003US6611310 Liquid crystal display device
08/26/2003US6611309 Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
08/26/2003US6611300 Semiconductor element and liquid crystal display device using the same
08/26/2003US6611178 Nanometer-order mechanical vibrator, production method thereof and measuring device using it
08/26/2003US6611044 Lateral bipolar transistor and method of making same
08/26/2003US6611043 Bipolar transistor and semiconductor device having the same
08/26/2003US6611041 Inductor with patterned ground shield
08/26/2003US6611033 Micromachined electromechanical (MEM) random access memory array and method of making same
08/26/2003US6611032 Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures
08/26/2003US6611031 Suppressing interband tunneling in transistors; reduced current leakage
08/26/2003US6611029 Double gate semiconductor device having separate gates
08/26/2003US6611027 Protection transistor with improved edge structure
08/26/2003US6611023 Field effect transistor with self alligned double gate and method of forming same
08/26/2003US6611022 Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method
08/26/2003US6611021 Semiconductor device and the method of manufacturing the same
08/26/2003US6611020 Memory cell structure
08/26/2003US6611019 Method and structure for an improved floating gate memory cell
08/26/2003US6611008 Preventing hole injection from base into emitter layer
08/26/2003US6611007 Method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (InGaAsP) quantum well structures
08/26/2003US6611006 Vertical component peripheral structure
08/26/2003US6611002 Smaller; vertically conducting even when nonconducting layer is included
08/26/2003US6610998 Having microlens for focusing electromagnetic waves; reliable, reproducible thin film transistors
08/26/2003US6610997 Electro-optical device
08/26/2003US6610996 Semiconductor device using a semiconductor film having substantially no grain boundary
08/26/2003US6610995 Gallium nitride-based III-V group compound semiconductor
08/26/2003US6610615 Plasma nitridation for reduced leakage gate dielectric layers
08/26/2003US6610614 Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates
08/26/2003US6610613 Method for fabricating thin insulating films, a semiconductor device and a method for fabricating a semiconductor device
08/26/2003US6610606 Method for manufacturing nitride compound based semiconductor device using an RIE to clean a GaN-based layer
08/26/2003US6610578 Methods of manufacturing bipolar transistors for use at radio frequencies
08/26/2003US6610576 Method for forming asymmetric dual gate transistor
08/26/2003US6610574 Process for forming MOSgated device with trench structure and remote contact
08/26/2003US6610573 Method for forming a single wiring level for transistors with planar and vertical gates on the same substrate
08/26/2003US6610572 Semiconductor device and method for manufacturing the same
08/26/2003US6610567 DRAM having a guard ring and process of fabricating the same
08/26/2003US6610554 Method of fabricating organic electroluminescent display
08/26/2003US6610548 Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory
08/26/2003US6610374 Method of annealing large area glass substrates
08/26/2003US6610366 Forming an oxide layer on a silicon carbide layer; and annealing the oxide layer in presence of nitrous oxide, heating
08/26/2003US6610142 Process for fabricating semiconductor and process for fabricating semiconductor device
08/26/2003US6610141 For use in electrically excited devices such as light emitting devices (LEDs), laser diodes (LDs), field effect transistors (FETs), photodetectors, and transducers
08/21/2003WO2003069679A1 Integrated, matchable capacitor
08/21/2003WO2003069678A1 Semiconductor device and its manufacturing method
08/21/2003WO2003069677A1 Structure, method of manufacturing the same, and device using the same
08/21/2003WO2003069669A1 Semiconductor fabrication process, lateral pnp transistor, and integrated circuit
08/21/2003WO2003069664A1 Method of forming a vertical double gate semiconductor device and structure thereof
08/21/2003WO2003069663A1 Polysilicon bipolar transistor and method for producing the same
08/21/2003WO2003069658A2 Strained si based layer made by uhv-cvd, and devices therein
08/21/2003WO2003069655A2 Electronic micro component including a capacitive structure
08/21/2003WO2003069016A2 In-line deposition processes for circuit fabrication
08/21/2003WO2003069015A2 Aperture masks for circuit fabrication
08/21/2003WO2003069014A1 Aperture masks for circuit fabrication
08/21/2003WO2003036697A3 Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices
08/21/2003WO2003031679A3 Method for depositing metal layers employing sequential deposition techniques
08/21/2003WO2003003452A3 Field-effect transistor and method of making the same
08/21/2003WO2003001600A3 Memory cell, memory cell configuration and method for producing the same
08/21/2003WO2002091496A3 Reversible field-programmable electric interconnects
08/21/2003WO2002089178A3 Embedded metal nanocrystals
08/21/2003WO2002084745A3 Power semiconductor devices and methods of forming same
08/21/2003US20030157815 Ammonia gas passivation on nitride encapsulated devices
08/21/2003US20030157807 Process of forming an electrically erasable programmable read only memory with an oxide layer exposed to hydrogen and nitrogen
08/21/2003US20030157793 Methods of forming semiconductor structures
08/21/2003US20030157785 Method of forming a thin film transistor on a transparent plate
08/21/2003US20030157777 Method of fabricating self-aligned silicon carbide semiconductor devices
08/21/2003US20030157776 Methods of fabricating aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
08/21/2003US20030157775 Method for manufacturing semiconductor device with hetero junction bipolar transistor
08/21/2003US20030157774 Method for manufacturing semiconductor device
08/21/2003US20030157773 Semiconductor device having a dielectric layer with a uniform nitrogen profile
08/21/2003US20030157772 Method of forming layers of oxide on a surface of a substrate
08/21/2003US20030157771 Method of forming an ultra-thin gate dielectric by soft plasma nitridation
08/21/2003US20030157770 Method of making the selection gate in a split-gate flash eeprom cell and its structure
08/21/2003US20030157769 Method of fabricating an integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source
08/21/2003US20030157767 Method of manufacturing semiconductor device
08/21/2003US20030157764 Evaporated LaA1O3 films for gate dielectrics
08/21/2003US20030157763 Semiconductor memory and its production process
08/21/2003US20030157759 Method for forming semiconductor substrate with convex shaped active region
08/21/2003US20030157758 Non-volatile semiconductor memory device and manufacturing method therefor
08/21/2003US20030157756 Mos integrated circuit with reduced on resistance
08/21/2003US20030157754 Semiconductor device and fabrication method thereof
08/21/2003US20030157753 Gate pad protection structure for power semiconductor device and manufacturing method therefor
08/21/2003US20030157745 Silicon carbide semiconductor devices with a regrown contact layer
08/21/2003US20030156781 Quantum domain relay
08/21/2003US20030156610 Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
08/21/2003US20030156460 Self-aligned split-gate flash memory cell and its contactless memory array
08/21/2003US20030156457 Memory device trapping charges in insulating film to store information in non-volatile manner
08/21/2003US20030156240 Display apparatus and manufacturing method thereof
08/21/2003US20030156239 Display apparatus and method for manufacturing the same
08/21/2003US20030156232 Liquid crystal display device
08/21/2003US20030156231 Substrate for liquid crystal display, liquid crystal display having the same, and method of manufacturing the same
08/21/2003US20030156230 Light sensitive display
08/21/2003US20030156087 Light sensitive display
08/21/2003US20030156084 Display apparatus in which characteristics of a plurality of transistors are made to differ from one another
08/21/2003US20030155942 Sensor array and method for detecting the condition of a transistor in a sensor array
08/21/2003US20030155658 Semiconductor device
08/21/2003US20030155654 Diamond pn junction diode and method for the fabrication thereof
08/21/2003US20030155651 Microwave monolithic integrated circuit package
1 ... 1600 1601 1602 1603 1604 1605 1606 1607 1608 1609 1610 1611 1612 1613 1614 1615 1616 1617 1618 1619 1620 ... 2182