Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2003
08/21/2003US20030155631 Vertical bipolar transistor
08/21/2003US20030155628 Low forward voltage drop schottky barrier diode and manufacturing method therefor
08/21/2003US20030155620 Structure of semiconductor electronic device and method of manufacturing the same
08/21/2003US20030155619 Multilayer; intakes, drains, channels; complementary logic gates; gallium arsenide substarte overcoated with silicon, dielectric
08/21/2003US20030155616 Electro-optical device and semiconductor circuit
08/21/2003US20030155615 Structure of a semiconductor integrated circuit and method of manufacturing the same
08/21/2003US20030155613 Semiconductor device and method of manufacturing the same
08/21/2003US20030155612 Display device
08/21/2003US20030155611 Process for fabricating a self-aligned vertical bipolar transistor
08/21/2003US20030155610 Semiconductor component with enhanced avalanche resistance
08/21/2003US20030155608 Method for manufacturing flash memory device
08/21/2003US20030155607 Semiconductor integrated circuit
08/21/2003US20030155605 EEPROM memory cell with high radiation resistance
08/21/2003US20030155594 Semiconductor display device and manufacturing method method thereof
08/21/2003US20030155592 Channel, barrier electrode, intakes, drains; high speed integrated circuits
08/21/2003US20030155591 Field effect transistor and method for producing a field effect transistor
08/21/2003US20030155588 Electro-optical device and electronic equipment
08/21/2003US20030155583 Semiconductor layer, solar cell using it,and production methods and applications thereof
08/21/2003US20030155582 Gate dielectric structures for integrated circuits and methods for making and using such gate dielectric structures
08/21/2003US20030155581 Controllable semiconductor component
08/21/2003US20030155578 Heterostructure with rear-face donor doping
08/21/2003US20030155575 III nitride compound semiconductor element an electrode forming method
08/21/2003US20030155574 Semiconductor devices formed of III-nitride compounds, lithium-niobate-tantalate, and silicon carbide
08/21/2003US20030155573 Semiconductor device and manufacturing method therefor
08/21/2003US20030155572 Thin film transistor and method for manufacturing thereof
08/21/2003US20030155571 Method of manufacturing a semiconductor device and liquid crystal display
08/21/2003US20030155569 Diverse band gap energy level semiconductor device
08/21/2003US20030155523 Quantum wells; etching, writing using electron beams; forming semiconductors
08/21/2003US20030155229 Hafnium silicide target for gate oxide film formation and its production method
08/21/2003US20030154912 Method of producing a body of semiconductor material having a reduced mean free path length
08/21/2003US20030154796 Pressure sensor
08/21/2003US20030154789 Capacitive type dynamic quantity sensor
08/21/2003DE10233916C1 Production of vertical transistor in the upper section of trench having single crystalline substrate with trench, lining the lower section of the trench with storage dielectric, filling with conducting material and further processing
08/21/2003DE10206739C1 Transistorbauelement Transistor device
08/20/2003EP1336989A2 Transistor device
08/20/2003EP1336203A2 Vertical junction field effect semiconductor diodes
08/20/2003EP1335878A1 Microstructure component
08/20/2003CN1437769A Field effect transistor structure with partially isolated source/drain junctions and methods of making same
08/20/2003CN1437761A Production method for semiconductor device
08/20/2003CN1437272A Organic semiconductor FET with protecting layer and its making process
08/20/2003CN1437269A Gate module and its making process
08/20/2003CN1437268A Semiconductor element with antenna
08/20/2003CN1437261A Memory with quantum point and producing method thereof
08/20/2003CN1437250A Method for producing CMOS device
08/20/2003CN1437231A Manufacture of metal-oxide semiconductor transistor
08/20/2003CN1437171A Panel display and method for producing panel display
08/20/2003CN1436717A Method for producing carbon nano-tube device and carbon nano tube device
08/20/2003CN1118868C Semiconductor device and producing method thereof
08/20/2003CN1118864C Method of producing semiconductor device utilizing phase change
08/20/2003CN1118863C Method of producing semiconductor device for preventing rising-up of siliside
08/19/2003US6608747 Variable-capacitance device and voltage-controlled oscillator
08/19/2003US6608658 Top gate TFT structure having light shielding layer and method to fabricate the same
08/19/2003US6608654 Methods of fabricating active matrix pixel electrodes
08/19/2003US6608653 Active matrix liquid crystal display device having reduced leak current and switching element used therein
08/19/2003US6608613 Matrix type liquid-crystal display unit
08/19/2003US6608386 Sub-nanoscale electronic devices and processes
08/19/2003US6608378 Formation of metal oxide gate dielectric
08/19/2003US6608365 Low leakage PMOS on-chip decoupling capacitor cells compatible with standard CMOS cells
08/19/2003US6608360 One-chip micro-integrated optoelectronic sensor
08/19/2003US6608357 Heat resistance, low resistivity; wiring of tantalum material
08/19/2003US6608356 Semiconductor device using damascene technique and manufacturing method therefor
08/19/2003US6608354 Semiconductor device and method of manufacturing the same
08/19/2003US6608353 Thin film transistor having pixel electrode connected to a laminate structure
08/19/2003US6608352 Determination of thermal resistance for field effect transistor formed in SOI technology
08/19/2003US6608351 Semiconductor device comprising a high-voltage circuit element
08/19/2003US6608350 High voltage vertical conduction superjunction semiconductor device
08/19/2003US6608349 Narrow/short high performance MOSFET device design
08/19/2003US6608348 High speed; miniaturization
08/19/2003US6608347 Semiconductor device and method of manufacturing the same
08/19/2003US6608346 Method and structure for an improved floating gate memory cell
08/19/2003US6608345 Nonvolatile semiconductor memory device and semiconductor integrated circuit
08/19/2003US6608339 Ferroelectric memory element
08/19/2003US6608336 Lateral double diffused MOS transistor
08/19/2003US6608326 Semiconductor film, liquid-crystal display using semiconductor film, and method of manufacture thereof
08/19/2003US6608325 Transistor and semiconductor device having columnar crystals
08/19/2003US6608324 Display device having thin film transistors
08/19/2003US6607990 Semiconductor device and its manufacturing method
08/19/2003US6607985 Gate stack and etch process
08/19/2003US6607980 Rapid-temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including same
08/19/2003US6607979 Semiconductor device and method of producing the same
08/19/2003US6607973 Preparation of high-k nitride silicate layers by cyclic molecular layer deposition
08/19/2003US6607972 Method for producing an edge termination suitable for high voltages in a basic material wafer prefabricated according to the principle of lateral charge compensation
08/19/2003US6607971 Method for extending a laser annealing pulse
08/19/2003US6607961 Method of definition of two self-aligned areas at the upper surface of a substrate
08/19/2003US6607958 Semiconductor device and method of manufacturing the same
08/19/2003US6607956 Method of manufacturing a single electron resistor memory device
08/19/2003US6607952 Semiconductor device with a disposable gate and method of manufacturing the same
08/19/2003US6607951 Method for fabricating a CMOS image sensor
08/19/2003US6607949 Method for fabricating polysilicon thin film transistor with improved electrical characteristics
08/19/2003US6607948 Method of manufacturing a substrate using an SiGe layer
08/19/2003US6607947 Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions
08/19/2003US6607946 Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3
08/19/2003US6607935 Method for fabricating array substrate for X-ray detector
08/14/2003WO2003067680A1 Method of producing organic semiconductor device
08/14/2003WO2003067668A2 Memory cell
08/14/2003WO2003067667A1 Organic semiconductor structure, process for producing the same, and organic semiconductor device
08/14/2003WO2003067666A1 Semiconductor device and method for fabricating the same
08/14/2003WO2003067665A2 Cellular mosfet devices and their manufacture
08/14/2003WO2003067664A1 Field-effect transistor and method for manufacturing it
08/14/2003WO2003067655A1 Method and structure for forming an hbt
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