Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2006
02/16/2006US20060035175 Transverse electric-field type liquid crystal display device, process of manufacturing the same,and scan-exposing device
02/16/2006US20060035064 Substrate, device, method of manufacturing device, method of manufacturing active-matrix substrate, electro-optical apparatus and electronic apparatus
02/16/2006US20060034124 Novel multi-state memory
02/16/2006US20060033524 Basic cells configurable into different types of semiconductor integrated circuits
02/16/2006US20060033415 Electronic device containing a carbon nanotube
02/16/2006US20060033218 Plug-in Connector
02/16/2006US20060033215 Diffusion barrier process for routing polysilicon contacts to a metallization layer
02/16/2006US20060033183 Cascode, cascode circuit and method for vertical integration of two bipolar transistors into a cascode arrangement
02/16/2006US20060033182 Method of fabricating a 3D RRAM
02/16/2006US20060033181 Buried conductors
02/16/2006US20060033180 Low-density, high-resistivity titanium nitride layer for use as a contact for low-leakage dielectric layers and method of making
02/16/2006US20060033179 Retrograde trench isolation structures
02/16/2006US20060033178 Etching method, a method of forming a trench isolation structure, a semiconductor substrate and a semiconductor apparatus
02/16/2006US20060033174 CMOS power sensor
02/16/2006US20060033173 Versatile system for charge dissipation in the formation of semiconductor device structures
02/16/2006US20060033172 Metal-metal bonding of compliant interconnect
02/16/2006US20060033171 Efficient transistor structure
02/16/2006US20060033170 Transistor arrangement
02/16/2006US20060033169 Thin film transistor device and method of manufacturing the same
02/16/2006US20060033168 Manufacturing method of semiconductor device
02/16/2006US20060033167 Reduced-step CMOS processes for low-cost radio frequency identification devices
02/16/2006US20060033166 Electronic devices having partially elevated source/drain structures and related methods
02/16/2006US20060033165 MOSFET structure with multiple self-aligned silicide contacts
02/16/2006US20060033163 I/O and power ESD protection circuits by enhancing substrate-bias in deep-submicron CMOS process
02/16/2006US20060033159 Semiconductor integrated circuit device
02/16/2006US20060033158 Method for fabricating a recessed channel field effect transistor (FET) device
02/16/2006US20060033157 Field effect transistor and application device thereof
02/16/2006US20060033156 High voltage and low on-resistance LDMOS transistor having radiation structure and isolation effect
02/16/2006US20060033155 Method of making and structure for LDMOS transistor
02/16/2006US20060033154 MOSgated power semiconductor device with source field electrode
02/16/2006US20060033153 Semiconductor device with improved breakdown voltage and high current capacity
02/16/2006US20060033152 Non-volatile memory device and method of fabricating the same
02/16/2006US20060033151 Flash memory having memory section and peripheral circuit section and manufacturing the same
02/16/2006US20060033150 Nonvolatile memory device and method for fabricating the same
02/16/2006US20060033149 Semiconductor device and method of manufacturing the same
02/16/2006US20060033148 Semiconductor device and method of fabricating the same
02/16/2006US20060033147 Flash memory structure and fabrication method thereof
02/16/2006US20060033146 P-channel electrically alterable non-volatile memory cell
02/16/2006US20060033145 Integrated memory device and process
02/16/2006US20060033144 Non-planar flash memory array with shielded floating gates on silicon mesas
02/16/2006US20060033143 Non-volatile memory cell and manufacturing method thereof
02/16/2006US20060033142 Non-volatile memory device and method for manufacturing the same
02/16/2006US20060033141 Method of manufacturing a semiconductor device having trenches for isolation and capacitor
02/16/2006US20060033140 Memory circuitry
02/16/2006US20060033138 Method for manufacturing semiconductor device, and semiconductor device
02/16/2006US20060033136 MRAM over sloped pillar
02/16/2006US20060033135 Ferroelectric element and method for manufacturing the same
02/16/2006US20060033134 Ferroelectric random access memories (FRAMS) having lower electrodes respectively self-aligned to node conductive layer patterns and methods of forming the same
02/16/2006US20060033133 MRAM cell having shared configuration
02/16/2006US20060033130 Liquid crystal display device
02/16/2006US20060033128 Logic switch and circuits utilizing the switch
02/16/2006US20060033127 Pinned photodiode integrated with trench isolation and fabrication method
02/16/2006US20060033126 Photon amplification for image sensors
02/16/2006US20060033125 Transistor with nitrogen-hardened gate oxide
02/16/2006US20060033123 Interconnect line selectively isolated from an underlying contact plug
02/16/2006US20060033121 Chemical sensor using chemically induced electron-hole production at a Schottky barrier
02/16/2006US20060033120 Gallium nitride based light emitting device and the fabricating method for the same
02/16/2006US20060033118 System, apparatus and method of selective laser repair for metal bumps of semiconductor device stack
02/16/2006US20060033116 Gallium nitride based semiconductor light emitting diode and process for preparing the same
02/16/2006US20060033114 Light emitting and imaging sensing device and apparatus
02/16/2006US20060033110 Three dimensional integrated circuit and method of design
02/16/2006US20060033109 Liquid crystal display device and fabrication method thereof
02/16/2006US20060033108 Transparent double-injection field-effect transistor
02/16/2006US20060033107 Thin film transistor and method of fabricating the same
02/16/2006US20060033106 Thin film transistor and method of fabricating the same
02/16/2006US20060033105 Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manafacturing method of liquid crystal display apparatus
02/16/2006US20060033104 Thin film transistor, method of manufacturing thin film transistor, and display device
02/16/2006US20060033103 Display device, method of production of the same, and projection type display device
02/16/2006US20060033102 Thin film transistor array panel used for a liquid crystal display and a manufacturing method thereof
02/16/2006US20060033101 Pixel structure and fabricating method thereof
02/16/2006US20060033099 Organic light emitting diode display and manufacturing method thereof
02/16/2006US20060032762 Method for forming patterns on a semiconductor device using a lift off technique
02/16/2006US20060032585 Plasma processing method and apparatus
02/16/2006DE19710731B4 Leistungshalbleiterbauteil und Verfahren zu dessen Herstellung Power semiconductor device and process for its preparation
02/16/2006DE19611043B4 Verfahren zum Herstellen eines Siliciumwafers, Verfahren zum Bilden eines Siliciumwafers und Verfahren zur Herstellung eines Halbleiterbauelements A method for producing a silicon wafer, method for forming a silicon wafer and method for manufacturing a semiconductor device
02/16/2006DE112004000586T5 Verfahren zur Herstellung von Strukturen in FinFET-Bauelementen A process for producing structures in FinFET devices
02/16/2006DE10346197B4 Glaskeramik, Verfahren zur Herstellung einer solchen und Verwendung Glass-ceramic, process for the preparation and use of such
02/16/2006DE10255830B4 Verfahren zur Herstellung eines mittels Feldeffekt steuerbaren Halbleiterbauelements A method for producing a controllable means of field-effect semiconductor device
02/16/2006DE102005027445A1 Dünnschichttransistorarray-Substrat und Herstellungsverfahren für ein solches Thin film transistor array substrate and manufacturing method for such a
02/16/2006DE102005026228A1 Fabricating gate all around transistor device, for use as GM type semiconductor device, involves subsequentially removing sacrificial layer and forming gate insulating layer and gate electrode in opening
02/16/2006DE102005021090A1 Halbleiter-Leuchtvorrichtung und Herstellungsverfahren für Dieselbe Semiconductor light-emitting device and manufacturing method for the same
02/16/2006DE102004057504A1 Halbleitervorrichtung und Herstellungsverfahren für diese A semiconductor device and manufacturing method for this
02/16/2006DE102004054352B3 Capacitor structure in semiconductor component trough structures, comprises conducting islands made of metallic and/or semiconducting materials and/or metal compounds
02/16/2006DE102004034341A1 Production of group III nitride p-channel transistor structures used in the production of logic components comprises growing an aluminum indium nitride barrier layer on a group III nitride buffer layer
02/16/2006DE10060927B4 Heckstruktur eines Kraftfahrzeuges Rear structure of a motor vehicle
02/16/2006DE10024480B4 Kompensationsbauelement mit verbesserter Robustheit Compensation component with improved robustness
02/16/2006CA2572951A1 Micronized semiconductor nanocrystal complexes and methods of making and using same
02/15/2006EP1626437A1 Method of fabricating a stack of islands made of a semiconductor material in another semiconductor material
02/15/2006EP1626032A1 Functional element and production method therefor and functional system and functional material
02/15/2006EP1625625A1 Field effect transistor using insulator-semiconductor transition material layer as channel material and method of manufacturing the same
02/15/2006EP1625624A1 Power device with high switching speed and manufacturing method thereof
02/15/2006EP1625622A2 Semiconductor device with a field shaping region
02/15/2006EP1625614A1 Method for the production of a bipolar transistor
02/15/2006EP1625372A1 Integrated resistor network for multi-functional use in constant current or constant voltage operation of a pressure sensor
02/15/2006EP1425791A4 Trench dmos transistor with embedded trench schottky rectifier
02/15/2006EP0870322B1 Trenched dmos transistor with buried layer for reduced on-resistance and ruggedness
02/15/2006CN1735972A Scalable nano-transistor and memory using back-side trapping
02/15/2006CN1735971A Bi-directional power switch
02/15/2006CN1735969A Grounded gate and isolation techniques for reducing dark current in CMOS image sensors
02/15/2006CN1735968A Semiconductor device and method of manufacturing thereof