| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 02/21/2006 | US7002242 Ball grid array package semiconductor device having improved power line routing |
| 02/21/2006 | US7002238 Use of a down-bond as a controlled inductor in integrated circuit applications |
| 02/21/2006 | US7002237 Spherical shaped semiconductor device, a flexible printed wiring substrate, and mounting method thereof |
| 02/21/2006 | US7002235 Semiconductor device |
| 02/21/2006 | US7002234 Low cost capacitors manufactured from conductive loaded resin-based materials |
| 02/21/2006 | US7002233 Integrated circuit including an inductive element having a large quality factor and being highly compact |
| 02/21/2006 | US7002232 Semiconductor integrated circuit device and method of testing the same |
| 02/21/2006 | US7002229 Self aligned Hall with field plate |
| 02/21/2006 | US7002228 Diffusion barrier for improving the thermal stability of MRAM devices |
| 02/21/2006 | US7002227 Pressure detecting device |
| 02/21/2006 | US7002226 Microelectro mechanical system for magneto-optic data storage apparatus |
| 02/21/2006 | US7002224 Transistor with doped gate dielectric |
| 02/21/2006 | US7002223 Semiconductor device having elevated source/drain |
| 02/21/2006 | US7002222 Integrated semiconductor memory circuit and method of manufacturing the same |
| 02/21/2006 | US7002221 Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same |
| 02/21/2006 | US7002218 Low capacitance ESD-protection structure under a bond pad |
| 02/21/2006 | US7002217 Electrostatic discharge mitigation structure and methods thereof using a dissipative capacitor with voltage dependent resistive material |
| 02/21/2006 | US7002213 Transistor and logic circuit on thin silicon-on-insulator wafers based on gate induced drain leakage currents |
| 02/21/2006 | US7002212 Static RAM having a TFT with n-type source and drain regions and a p-type region in contact with only the intrinsic channel of the same |
| 02/21/2006 | US7002211 Lateral super-junction semiconductor device |
| 02/21/2006 | US7002210 Semiconductor device including a high-breakdown voltage MOS transistor |
| 02/21/2006 | US7002209 MOSFET structure with high mechanical stress in the channel |
| 02/21/2006 | US7002208 Semiconductor device and manufacturing method of the same |
| 02/21/2006 | US7002207 Field effect transistors having multiple stacked channels |
| 02/21/2006 | US7002206 Multi-bit memory unit and fabrication method thereof |
| 02/21/2006 | US7002205 Super-junction semiconductor device and method of manufacturing the same |
| 02/21/2006 | US7002204 Non-volatile semiconductor memory and process of fabricating the same |
| 02/21/2006 | US7002203 Semiconductor memory with nonvolatile memory cell array and semiconductor device with nonvolatile memory cell array and logic device |
| 02/21/2006 | US7002201 Semiconductor device and manufacturing method thereof |
| 02/21/2006 | US7002200 Self-aligned structure with unique erasing gate in split gate flash |
| 02/21/2006 | US7002199 Semiconductor device using high-dielectric-constant material and method of manufacturing the same |
| 02/21/2006 | US7002197 Cross point resistive memory array |
| 02/21/2006 | US7002196 Ferroelectric capacitor devices and FeRAM devices |
| 02/21/2006 | US7002195 Magnetic random access memory (MRAM) cells having split sub-digit lines |
| 02/21/2006 | US7002194 Via AP switching |
| 02/21/2006 | US7002193 Ferroelectric capacitor and method of manufacturing the same |
| 02/21/2006 | US7002189 Compound semiconductor device |
| 02/21/2006 | US7002188 Laser-gated and pumped multi-layer semiconductor power switch with reduced forward losses |
| 02/21/2006 | US7002187 Integrated schottky diode using buried power buss structure and method for making same |
| 02/21/2006 | US7002186 Flat panel display and protection device therefor |
| 02/21/2006 | US7002185 Semiconductor device using semiconductor chip |
| 02/21/2006 | US7002181 Thin film transistor and use of same |
| 02/21/2006 | US7002179 ZnO system semiconductor device |
| 02/21/2006 | US7002178 Polycrystalline silicon thin film transistor and method for fabricating the same |
| 02/21/2006 | US7002176 Vertical organic transistor |
| 02/21/2006 | US7002175 Method of making resonant tunneling diodes and CMOS backend-process-compatible three dimensional (3-D) integration |
| 02/21/2006 | US7002174 Characterization and measurement of superconducting structures |
| 02/21/2006 | US7001855 Flash memory device and fabrication process thereof, method of forming a dielectric film |
| 02/21/2006 | US7001852 Method of making a high quality thin dielectric layer |
| 02/21/2006 | US7001844 Material for contact etch layer to enhance device performance |
| 02/21/2006 | US7001838 Method of wet etching an inorganic antireflection layer |
| 02/21/2006 | US7001837 Semiconductor with tensile strained substrate and method of making the same |
| 02/21/2006 | US7001829 Semiconductor device and method of manufacturing the same |
| 02/21/2006 | US7001825 Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same |
| 02/21/2006 | US7001822 Semiconductor device formed on insulating layer and method of manufacturing the same |
| 02/21/2006 | US7001820 Heterojunction bipolar transistor and method for fabricating the same |
| 02/21/2006 | US7001819 Semiconductor device and power amplifier using the same |
| 02/21/2006 | US7001818 MIS semiconductor device and manufacturing method thereof |
| 02/21/2006 | US7001817 Method for fabricating a semiconductor device |
| 02/21/2006 | US7001815 Method of manufacturing semiconductor device with triple gate insulating layers |
| 02/21/2006 | US7001813 Layers of group III-nitride semiconductor made by processes with multi-step epitaxial growths |
| 02/21/2006 | US7001812 Method of manufacturing semi conductor device |
| 02/21/2006 | US7001811 Method for making memory cell without halo implant |
| 02/21/2006 | US7001809 Method to increase coupling ratio of source to floating gate in split-gate flash |
| 02/21/2006 | US7001808 Semiconductor integrated circuit device having a dummy conductive film and method of manufacturing the same |
| 02/21/2006 | US7001806 Semiconductor structure with increased breakdown voltage and method for producing the semiconductor structure |
| 02/21/2006 | US7001802 Thin film transistor with multiple gates using metal induced lateral crystalization and method of fabricating the same |
| 02/21/2006 | US7001800 Manufacturing method for non-active electrically structures in order to optimize the definition of active electrically structures in an electronic circuit integrated on a semiconductor substrate and corresponding circuit |
| 02/21/2006 | US7001794 Focal plane arrays in type II-superlattices |
| 02/21/2006 | US7001787 Electrode manufacturing method |
| 02/21/2006 | US7001784 Method to control spacer width |
| 02/21/2006 | US7001779 Methods of forming semiconductor constructions |
| 02/21/2006 | US7001578 Family of discretely sized silicon nanoparticles and method for producing the same |
| 02/21/2006 | US7001530 Method for detecting the end point by using matrix |
| 02/21/2006 | US7001461 Crystallization apparatus, crystallization method, and phase shifter |
| 02/16/2006 | WO2006017600A2 Feol/meol metal resistor for high end cmos |
| 02/16/2006 | WO2006016972A2 Fabrication of an eeprom cell with emitter-polysilicon source/drain regions |
| 02/16/2006 | WO2006016965A2 Improved process for resurf diffusion for high voltage mosfet |
| 02/16/2006 | WO2006016672A1 Siliceous film with smaller flat band shift and method for producing same |
| 02/16/2006 | WO2006016669A1 Method for manufacturing semiconductor device |
| 02/16/2006 | WO2006016662A1 Semiconductor element matrix array and manufacturing method of the same, and display panel |
| 02/16/2006 | WO2006016642A1 Semiconductor device manufacturing method and plasma oxidation treatment method |
| 02/16/2006 | WO2006016160A1 Bipolar mosfet devices |
| 02/16/2006 | WO2005109515A3 System and method for making nanoparticles with controlled emission properties |
| 02/16/2006 | WO2005084164A3 Nanotube-based switching elements and logic circuits |
| 02/16/2006 | WO2005083795A8 Method for manufacturing semiconductor device and plasma oxidation method |
| 02/16/2006 | WO2005082122A3 Method of making a semiconductor device using treated photoresist |
| 02/16/2006 | WO2005022966A3 A method for pattern metalization of substrates |
| 02/16/2006 | WO2005008726A3 Flip chip device assembly machine |
| 02/16/2006 | WO2004114389A9 Nonvolatile memory device with a floating gate comprising semiconductor nanocrystals |
| 02/16/2006 | US20060035452 Transparent oxide semiconductor thin film transistor |
| 02/16/2006 | US20060035433 Non-volatile memory devices and methods for driving the same |
| 02/16/2006 | US20060035431 Memory cell with reduced DIBL and Vss resistance |
| 02/16/2006 | US20060035427 Semiconductor device and method for fabricating the same |
| 02/16/2006 | US20060035426 Method and apparatus for polysilicon resistor formation |
| 02/16/2006 | US20060035422 Integrated pet and schottky device |
| 02/16/2006 | US20060035421 Semiconductor device and method therefore |
| 02/16/2006 | US20060035404 Method for manufacturing an electronic device having an electronically determined physical test member |
| 02/16/2006 | US20060035399 Process for making stacks of islands made of one semiconducting material encapsulated in another semiconducting material |
| 02/16/2006 | US20060035390 Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxides |