| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/14/2006 | US6998634 Memory device utilizing vertical nanotubes |
| 02/14/2006 | US6998357 High dielectric constant metal oxide gate dielectrics |
| 02/14/2006 | US6998356 Method of fabricating a semiconductor device including a dielectric layer formed using a reactive agent |
| 02/14/2006 | US6998355 Flash memory device and a fabrication process thereof, method of forming a dielectric film |
| 02/14/2006 | US6998354 Flash memory device and fabrication process thereof, method of forming a dielectric film |
| 02/14/2006 | US6998335 Structure and method for fabricating a bond pad structure |
| 02/14/2006 | US6998333 Method for making nanoscale wires and gaps for switches and transistors |
| 02/14/2006 | US6998322 Methods of fabricating high voltage, high temperature capacitor and interconnection structures |
| 02/14/2006 | US6998320 Passivation layer for group III-V semiconductor devices |
| 02/14/2006 | US6998318 Method for forming short-channel transistors |
| 02/14/2006 | US6998317 Method of making a non-volatile memory using a plasma oxidized high-k charge-trapping layer |
| 02/14/2006 | US6998315 Termination structure for trench DMOS device and method of making the same |
| 02/14/2006 | US6998314 Fabricating a 2F2 memory device with a horizontal floating gate |
| 02/14/2006 | US6998313 Stacked gate flash memory device and method of fabricating the same |
| 02/14/2006 | US6998311 Methods of forming output prediction logic circuits with ultra-thin vertical transistors |
| 02/14/2006 | US6998310 Processes for making a single election transistor with a vertical channel |
| 02/14/2006 | US6998309 Method of manufacturing a non-volatile semiconductor memory device |
| 02/14/2006 | US6998305 Enhanced selectivity for epitaxial deposition |
| 02/14/2006 | US6998303 Manufacture method for semiconductor device with patterned film of ZrO2 or the like |
| 02/14/2006 | US6998302 Method of manufacturing mosfet having a fine gate width with improvement of short channel effect |
| 02/14/2006 | US6998300 Methods for manufacturing semiconductor devices |
| 02/14/2006 | US6998299 Semiconductor device and method of manufacturing thereof |
| 02/14/2006 | US6998289 Multiple layer phase-change memory |
| 02/14/2006 | US6998287 Polycrystalline liquid crystal display device having large width channel and method of fabricating the same |
| 02/14/2006 | US6998283 In-plane switching mode liquid crystal display device and method for fabricating the same |
| 02/14/2006 | US6998282 Method of manufacturing a semiconductor device |
| 02/14/2006 | US6998279 Method of mounting light emitting element |
| 02/14/2006 | US6998276 Magnetoresistive memory device and method for fabricating the same |
| 02/14/2006 | US6998225 Lift-off process; resist remover consists of an amine or a cyclic nitrogen compound so that the residual resist mask need not be removed by ashing. |
| 02/14/2006 | US6998059 Method for manufacturing a silicon sensor and a silicon sensor |
| 02/14/2006 | US6997985 Semiconductor, semiconductor device, and method for fabricating the same |
| 02/14/2006 | US6997580 Multidirectional light emitting diode unit |
| 02/14/2006 | US6997049 Wind tunnel and collector configuration therefor |
| 02/14/2006 | CA2205882C Method of manufacturing a multilayer solar cell |
| 02/09/2006 | WO2006014574A2 Metal-insulator varactor devices |
| 02/09/2006 | WO2006014515A2 Two-dimensional silicon controlled rectifier |
| 02/09/2006 | WO2006014397A2 Low-loss substrate for high quality components |
| 02/09/2006 | WO2006014346A2 Silicon-rich nickel-silicide ohmic contacts for sic semiconductor devices |
| 02/09/2006 | WO2006014188A2 Fully silicided metal gates |
| 02/09/2006 | WO2006013898A1 Semiconductor device manufacturing method |
| 02/09/2006 | WO2005059959A3 Light emitting diode systems |
| 02/09/2006 | US20060030164 Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and a structure of such film regions |
| 02/09/2006 | US20060030146 Source lines for NAND memory devices |
| 02/09/2006 | US20060030127 Method of fabricating semiconductor device |
| 02/09/2006 | US20060030115 Integrated circuit devices including passive device shielding structures and methods of forming the same |
| 02/09/2006 | US20060030113 Heterojunction bipolar transistor and method for fabricating the same |
| 02/09/2006 | US20060030104 Integrating n-type and p-type metal gate transistors |
| 02/09/2006 | US20060030102 Flash memory devices including a pass transistor and methods of forming the same |
| 02/09/2006 | US20060030096 Methods of enabling polysilicon gate electrodes for high-k gate dieletrics |
| 02/09/2006 | US20060030091 Word line structure with single-sided partially recessed gate structure |
| 02/09/2006 | US20060030089 Method for fabricating polycrystalline silicon thin film transistor |
| 02/09/2006 | US20060030084 Manufacture of electronic devices comprising thin-film circuit elements |
| 02/09/2006 | US20060030057 Insulating film, capacitive element and semiconductor storage device including the insulating film, and fabrication methods thereof |
| 02/09/2006 | US20060029792 Process for manufacturing self-assembled nanoparticles |
| 02/09/2006 | US20060028871 Nonvolatile semiconductor memory device |
| 02/09/2006 | US20060028856 Semiconductor memory devices and methods of fabricating semiconductor memory device |
| 02/09/2006 | US20060028605 TFT active matrix liquid crystal display devices |
| 02/09/2006 | US20060028602 Liquid crystal display device and method of manufacturing the same |
| 02/09/2006 | US20060027936 Method for processing base |
| 02/09/2006 | US20060027925 Composite barrier layer |
| 02/09/2006 | US20060027920 Electronic component production method and electronic component produced by the method |
| 02/09/2006 | US20060027910 Pressure-contact type semiconductor device |
| 02/09/2006 | US20060027905 Biosensor with smart card configuration |
| 02/09/2006 | US20060027898 Sensor die structure |
| 02/09/2006 | US20060027897 P-type silicon wafer and method for heat-treating the same |
| 02/09/2006 | US20060027896 Nitride Semiconductor Single-Crystal Substrate and Method of Its Synthesis |
| 02/09/2006 | US20060027895 Forming lateral bipolar junction transistor in CMOS flow |
| 02/09/2006 | US20060027894 Resistor circuit |
| 02/09/2006 | US20060027893 Field-enhanced programmable resistance memory cell |
| 02/09/2006 | US20060027892 Semiconductor device |
| 02/09/2006 | US20060027891 Sacrificial layer technique to make gaps in MEMS applications |
| 02/09/2006 | US20060027890 Deep trench isolation structure of a high-voltage device and method for forming thereof |
| 02/09/2006 | US20060027889 Isolated fully depleted silicon-on-insulator regions by selective etch |
| 02/09/2006 | US20060027886 Apparatus for cutting devices from conductive substrates secured during cutting by vacuum pressure |
| 02/09/2006 | US20060027885 MEMS device with non-standard profile |
| 02/09/2006 | US20060027884 Silicon carbide MEMS structures and methods of forming the same |
| 02/09/2006 | US20060027883 Semiconductor device and manufacturing method thereof |
| 02/09/2006 | US20060027882 Dielectric layer created using ALD to deposit multiple components |
| 02/09/2006 | US20060027881 Process for producing a layer arrangement, and layer arrangement for use as a dual-gate field-effect transistor |
| 02/09/2006 | US20060027880 Semiconductor device including a high-breakdown voltage MOS transistor |
| 02/09/2006 | US20060027879 Semiconductor device and method of manufacturing the same |
| 02/09/2006 | US20060027878 FEOL/MEOL metal resistor for high end CMOS |
| 02/09/2006 | US20060027877 Semiconductor device with triple-well region |
| 02/09/2006 | US20060027876 CMOS device with improved performance and method of fabricating the same |
| 02/09/2006 | US20060027875 Semiconductor device with gate space of positive slope and fabrication method thereof |
| 02/09/2006 | US20060027874 Novel isolated LDMOS IC technology |
| 02/09/2006 | US20060027869 Vertical double-channel silicon-on-insulator transistor and method of manufacturing the same |
| 02/09/2006 | US20060027866 Method of forming a recessed buried-diffusion device |
| 02/09/2006 | US20060027865 Semiconductor device and method for fabricating the same |
| 02/09/2006 | US20060027864 Semiconductor device and method for fabricating such device |
| 02/09/2006 | US20060027863 Semiconductor device and method of manufacturing the same |
| 02/09/2006 | US20060027862 Semiconductor device and a method of manufacturing the same |
| 02/09/2006 | US20060027861 Semiconductor device and method for manufacturing the same |
| 02/09/2006 | US20060027860 Field-effect transistor |
| 02/09/2006 | US20060027859 Methods of forming memory cells with nonuniform floating gate structures |
| 02/09/2006 | US20060027858 Semiconductor device with split gate electrode structure and method for manufacturing the semiconductor device |
| 02/09/2006 | US20060027857 Semiconductor device and semiconductor memory using the same |
| 02/09/2006 | US20060027856 Nonvolatile memory devices and methods of fabricating the same |
| 02/09/2006 | US20060027855 Non-volatile memory devices having trenches and methods of forming the same |
| 02/09/2006 | US20060027854 Non-volatile memory device and method of fabricating the same |