| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/23/2006 | US20060038236 Semiconductor device |
| 02/23/2006 | US20060038235 Semiconductor device |
| 02/23/2006 | US20060038234 Memory cell structure |
| 02/23/2006 | US20060038233 Semiconductor device and method of manufacturing the same |
| 02/23/2006 | US20060038232 High-voltage transistor having shielding gate |
| 02/23/2006 | US20060038230 Transistor and method of manufacturing the same |
| 02/23/2006 | US20060038226 Field effect transistor and application device thereof |
| 02/23/2006 | US20060038225 Integrated circuit employable with a power converter |
| 02/23/2006 | US20060038224 Metal-oxide-semiconductor device having an enhanced shielding structure |
| 02/23/2006 | US20060038223 Trench MOSFET having drain-drift region comprising stack of implanted regions |
| 02/23/2006 | US20060038222 Chemoreceptive semiconductor structure |
| 02/23/2006 | US20060038221 Antiferromagnetic/paramagnetic resistive device, non-volatile memory and method for fabricating the same |
| 02/23/2006 | US20060038220 Semiconductor memory device comprising memory cells with floating gate electrode and method of production |
| 02/23/2006 | US20060038219 Memory device |
| 02/23/2006 | US20060038218 Semiconductor integrated circuit device |
| 02/23/2006 | US20060038216 Formation of capacitor having a Fin structure |
| 02/23/2006 | US20060038215 Semiconductor device and method for manufacturing the same |
| 02/23/2006 | US20060038214 Low voltage drive ferroelectric capacitor |
| 02/23/2006 | US20060038213 Magnetic memory adopting synthetic antiferromagnet as free magnetic layer |
| 02/23/2006 | US20060038212 Structure for amorphous carbon based non-volatile memory |
| 02/23/2006 | US20060038211 Magnetic memory with static magnetic offset field |
| 02/23/2006 | US20060038210 Multi-sensing level MRAM structures |
| 02/23/2006 | US20060038206 Semiconductor device and manufacturing method thereof |
| 02/23/2006 | US20060038205 DRAM layout with vertical FETS and method of formation |
| 02/23/2006 | US20060038202 Heatsink apparatus and thermally-conductive intermediate material for dissipating heat in semiconductor packages |
| 02/23/2006 | US20060038199 CMOSFET with hybrid strained channels |
| 02/23/2006 | US20060038194 Light-emitting element device, light-receiving element device, optical device, fluoride crystals, production method of fluoride crystals, and crucible |
| 02/23/2006 | US20060038193 Gallium-nitride based light emitting diode structure with enhanced light illuminance |
| 02/23/2006 | US20060038183 Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers |
| 02/23/2006 | US20060038182 Stretchable semiconductor elements and stretchable electrical circuits |
| 02/23/2006 | US20060038181 Manufacturing process of thin film transistor liquid crystal display |
| 02/23/2006 | US20060038180 Pixel structure |
| 02/23/2006 | US20060038179 Method and apparatus for solution processed doping of carbon nanotube |
| 02/23/2006 | US20060038178 Thin film transistor array panel and a manufacturing method thereof |
| 02/23/2006 | US20060038177 COG-typed organic electroluminescent cell |
| 02/23/2006 | US20060038175 Pixel structure |
| 02/23/2006 | US20060038173 Buffer layer for promoting electron mobility and thin film transistor having the same |
| 02/23/2006 | US20060038169 Polymer memory device with variable period of retention time |
| 02/23/2006 | US20060038168 Terahertz interconnect system and applications |
| 02/23/2006 | US20060038166 Nitride semiconductor light emitting device |
| 02/23/2006 | DE4443013B4 Ladungsübertragungsvorrichtung Charge transfer device |
| 02/23/2006 | DE19947020B4 Kompensationsbauelement mit variabler Ladungsbilanz und dessen Herstellungsverfahren Compensation component with variable charge balance and its manufacturing method |
| 02/23/2006 | DE19881806B4 Blockable semiconductor device having insulator profile between anode and cathode metallizations |
| 02/23/2006 | DE112004000578T5 Verfahren zur Herstellung eines Gates in einem Finfet-Bauelement und Dünnen eines Stegs in einem Kanalgebiet des Fifet-Bauelements Process for the preparation of a gate in a FinFET device and thinning of a fin in a channel region of the device Fifet- |
| 02/23/2006 | DE10352055B4 Spannungsgesteuerter Schwingkreis A voltage controlled oscillator |
| 02/23/2006 | DE102005038998A1 Metalloxidhalbleiter-Bauelement mit verbesserter Abschirmstruktur Metal oxide semiconductor device with improved shielding |
| 02/23/2006 | DE102005036551A1 Siliziumkarbid-Halbleitervorrichtung und Herstellungsverfahren davon Silicon carbide semiconductor device and manufacturing method thereof |
| 02/23/2006 | DE102005029493A1 Integrierte Speicherschaltungsanordnung und Verfahren Integrated circuit memory device and method |
| 02/23/2006 | DE102004040524A1 Thyristor has direction specific resistance zone between ignition structure and main n emitter so that ignition pulse time is independent of the spreading direction |
| 02/23/2006 | DE102004040523A1 Verfahren zur Herstellung von Feldringen A method for fabrication of field rings |
| 02/23/2006 | DE102004040238A1 Flexibler Nanotransistor und Verfahren zur Herstellung Flexible nano transistor and methods for making |
| 02/23/2006 | DE102004039209A1 Verfahren zur Herstellung einer n-dotierten Feldstoppzone in einem Halbleiterkörper und Halbleiterbauelement mit einer Feldstoppzone A process for producing an n-doped field stop zone in a semiconductor body and the semiconductor device having a field stop zone |
| 02/23/2006 | DE102004039208A1 Verfahren zur Herstellung einer vergrabenen n-dotierten Halbleiterzone in einem Halbleiterkörper und Halbleiterbauelement A process for producing a buried n-doped semiconductor region in a semiconductor body and the semiconductor component |
| 02/23/2006 | DE102004038699A1 Kaskode, Kaskodenschaltung und Verfahren zur vertikalen Integration von zwei Bipolartransistoren zu einer Kaskodenanordnung Cascode cascode circuit and method for vertical integration of two bipolar transistors in a cascode arrangement |
| 02/23/2006 | DE102004012819B4 Leistungshalbleiterbauelement mit erhöhter Robustheit Power semiconductor component with improved durability |
| 02/23/2006 | DE10164049B4 Passive Bauelementstruktur und diese enthaltendes integriertes Schaltkreisbauelement und Halbleiterbauelement Passive component structure and containing these integrated circuit device and semiconductor device |
| 02/23/2006 | DE10143256B4 Integrierter SOI-Halbleiterschaltkreis und Herstellungsverfahren hierfür SOI semiconductor integrated circuit, and manufacturing method thereof |
| 02/23/2006 | DE10111708B4 Halbleitervorrichtung und Herstellungsverfahren für dieselbe A semiconductor device and manufacturing method for the same |
| 02/23/2006 | CA2577198A1 Semiconductor radiation detector with a modified internal gate structure |
| 02/22/2006 | EP1628349A2 Mis capacitor and production method of mis capacitor |
| 02/22/2006 | EP1628337A1 P-channel power mis field effect transistor and swiching circuit |
| 02/22/2006 | EP1628283A1 Pixel circuit, display unit, and pixel circuit drive method |
| 02/22/2006 | EP1627420A2 Alloyed semiconductor quantum dots and concentration-gradient alloyed quantum dots, series comprising the same and methods related thereto |
| 02/22/2006 | EP0946988B1 Memory redundancy circuit using single polysilicon floating gate transistors as redundancy elements |
| 02/22/2006 | CN2760759Y 应变沟道半导体结构 Strained channel semiconductor structure |
| 02/22/2006 | CN1739187A Crystallized semiconductor device, method for producing same and crystallization apparatus |
| 02/22/2006 | CN1739014A Semiconductor pressure sensor and process for fabricating the same |
| 02/22/2006 | CN1738070A Thin film transistor and method of fabricating the same |
| 02/22/2006 | CN1738062A Capacitor having a dielectric layer that reduces leakage current and a method of manufacturing the same |
| 02/22/2006 | CN1738061A Metal inducement single direction transverse crystallization thin film transistor device and its preparing method |
| 02/22/2006 | CN1738060A 半导体器件 Semiconductor devices |
| 02/22/2006 | CN1738059A Semiconductor device and method of manufacturing the same |
| 02/22/2006 | CN1738058A Switch element of pixel electrode and its manufacturing method |
| 02/22/2006 | CN1738057A Metal-oxide-semiconductor device having an enhanced shielding structure |
| 02/22/2006 | CN1738056A Transistor and method of manufacturing the same |
| 02/22/2006 | CN1738055A Gallium nitride based high electron mobility transistor |
| 02/22/2006 | CN1738054A Field-effect transistor, complementary field-effect transistor, and method of manufacturing field-effect transistor |
| 02/22/2006 | CN1738053A Non-volatile memory devices having trenches and methods of forming the same |
| 02/22/2006 | CN1738050A Semiconductor device and method of manufacturing the same |
| 02/22/2006 | CN1738049A Microelectronics element and its manufacturing method |
| 02/22/2006 | CN1738045A Grounded gate and isolation techniques for reducing dark current in CMOS image sensors |
| 02/22/2006 | CN1738024A Nonvolatile semiconductor memory device and method for fabricating the same |
| 02/22/2006 | CN1738011A Fabrication method of thin film transistor |
| 02/22/2006 | CN1738010A Schottky barrier diode and method of making the same |
| 02/22/2006 | CN1737993A Mos electric fuse, its programming method, and semiconductor device using the same |
| 02/22/2006 | CN1737990A MIS capacitor and production method of MIS capacitor |
| 02/22/2006 | CN1737673A Substrate for liquid crystal display and liquid crystal display having the same |
| 02/22/2006 | CN1243373C Junction field-effect transistor and method of manufacture thereof |
| 02/21/2006 | US7002865 Nonvolatile semiconductor memory device |
| 02/21/2006 | US7002845 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield |
| 02/21/2006 | US7002830 Semiconductor integrated circuit device |
| 02/21/2006 | US7002829 Apparatus and method for programming a one-time programmable memory device |
| 02/21/2006 | US7002656 Array substrate for in-plane switching mode liquid crystal display device |
| 02/21/2006 | US7002647 Display device and method of manufacturing the same |
| 02/21/2006 | US7002631 Image pickup apparatus including compensation responsive to phased drive of charge transfer gates |
| 02/21/2006 | US7002630 Method of driving solid-state imaging device, solid-state imaging device and camera |
| 02/21/2006 | US7002302 Flat panel display |
| 02/21/2006 | US7002255 Multi-chips stacked package |
| 02/21/2006 | US7002251 Semiconductor device |
| 02/21/2006 | US7002247 Thermal interposer for thermal management of semiconductor devices |