Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2006
03/02/2006US20060043494 Semiconductor device and method of manufacturing semiconductor device
03/02/2006US20060043493 Semiconductor device and method for fabricating the same
03/02/2006US20060043492 Ruthenium gate for a lanthanide oxide dielectric layer
03/02/2006US20060043486 Electro-optical device and manufacturing method thereof
03/02/2006US20060043484 Self-aligned silicide (salicide) process for low resistivity contacts to thin film silicon-on-insulator and bulk mosfets and for shallow junctions
03/02/2006US20060043482 Programming and erasing structure for an NVM cell
03/02/2006US20060043481 Semiconductor device and method of manufacturing the same
03/02/2006US20060043480 Semiconductor device and fabrication method of the same
03/02/2006US20060043479 Metal oxide semiconductor device including a shielding structure for low gate-drain capacitance
03/02/2006US20060043478 Semiconductor device having super junction structure and method for manufacturing the same
03/02/2006US20060043477 Interposers for chip-scale packages and intermediates thereof
03/02/2006US20060043476 Junction varactor with high q factor
03/02/2006US20060043475 Semiconductor device
03/02/2006US20060043474 Top drain mosgated device and process of manufacture therefor
03/02/2006US20060043473 Memory cell, array, device and system with overlapping buried digit line and active area and method for forming same
03/02/2006US20060043472 High density access transistor having increased channel width and methods of fabricating such devices
03/02/2006US20060043471 Vertical transistor structures having vertical-surrounding-gates with self-aligned features
03/02/2006US20060043470 Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component
03/02/2006US20060043469 SONOS memory cell and method of forming the same
03/02/2006US20060043468 Stepped gate configuration for non-volatile memory
03/02/2006US20060043467 Stepped gate configuration for non-volatile memory
03/02/2006US20060043466 Stepped gate configuration for non-volatile memory
03/02/2006US20060043465 Semiconductor device and method of manufacturing the same
03/02/2006US20060043464 Direct tunneling semiconductor memory device and fabrication process thereof
03/02/2006US20060043463 Floating gate having enhanced charge retention
03/02/2006US20060043462 Stepped gate configuration for non-volatile memory
03/02/2006US20060043461 Process for manufacturing a byte selection transistor for a matrix of non volatile memory cells and corresponding structure
03/02/2006US20060043460 Exposure system, semiconductor device, and method for fabricating the semiconductor device
03/02/2006US20060043459 Non-planar non-volatile memory cell with an erase gate, an array therefor, and a method of making same
03/02/2006US20060043458 Gate coupling in floating-gate memory cells
03/02/2006US20060043457 Nonvolatile semiconductor memory device having a recessed gate and a charge trapping layer and methods of forming the same, and methods of operating the same
03/02/2006US20060043456 Protection of tunnel dielectric using epitaxial silicon
03/02/2006US20060043455 Multiple-depth STI trenches in integrated circuit fabrication
03/02/2006US20060043454 Mos varactor using isolation well
03/02/2006US20060043453 Semiconductor devices
03/02/2006US20060043452 Ferroelectric memory and its manufacturing method
03/02/2006US20060043451 Method for obtaining extreme selectivity of metal nitrides and metal oxides
03/02/2006US20060043450 Vertical transistors
03/02/2006US20060043449 Semiconductor constructions and transistors, and methods of forming semiconductor constructions and transistors
03/02/2006US20060043448 Dielectric relaxation memory
03/02/2006US20060043447 Thin film transistor having an etching protection film and manufacturing method thereof
03/02/2006US20060043446 Ferroelectric memory and its manufacturing method
03/02/2006US20060043445 Semiconductor device and method for manufacturing the same
03/02/2006US20060043444 Thin film device and a method of formation thereof
03/02/2006US20060043443 Spin transistor using spin-filter effect and nonvolatile memory using spin transistor
03/02/2006US20060043435 Nano-scaled gate structure with self-interconnect capabilities
03/02/2006US20060043434 Semiconductor devices and methods of manufacture thereof
03/02/2006US20060043431 Memory array with overlapping buried digit line and active area and method for forming same
03/02/2006US20060043430 Transistor having an asymmetric source/drain and halo implantation region and a method of forming the same
03/02/2006US20060043429 Contact structure and contact liner process
03/02/2006US20060043424 Enhanced PMOS via transverse stress
03/02/2006US20060043422 Transistor structure with stress modification and capacitive reduction feature in a width direction and method thereof
03/02/2006US20060043419 Semiconductor substrate and semiconductor device manufactured by epitaxial growth on the semiconductor substrate
03/02/2006US20060043415 Field-effect transistor
03/02/2006US20060043414 Rectification chip terminal structure
03/02/2006US20060043413 Pressed-contact type semiconductor device
03/02/2006US20060043412 Method and arrangement in connection with a half-controlled network bridge
03/02/2006US20060043411 Memory cell with trenched gated thyristor
03/02/2006US20060043406 Liquid crystal display device, illumination device backlight unit
03/02/2006US20060043405 Nitride-based compound semiconductor light emitting device
03/02/2006US20060043397 Infra-red light-emitting device and method for preparing the same
03/02/2006US20060043396 Sapphire substrate, epitaxial substrate and semiconductor device
03/02/2006US20060043395 Semiconductor light-emitting element and method of producing the same
03/02/2006US20060043379 SIC metal semiconductor field-effect transistors and methods for producing same
03/02/2006US20060043377 Semiconductor device
03/02/2006US20060043376 Semiconductor device having display device
03/02/2006US20060043375 Image display and method of driving image display
03/02/2006US20060043374 Touch panel
03/02/2006US20060043373 Method for manufacturing a pixel array of top emitting OLED
03/02/2006US20060043372 Light emitting devices and arrays with reduced electrode resistance
03/02/2006US20060043371 Active matrix organic electroluminescent display device
03/02/2006US20060043370 Thin film transistor array and pixel structure
03/02/2006US20060043369 CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layers
03/02/2006US20060043367 Semiconductor device and method of fabricating a low temperature poly-silicon layer
03/02/2006US20060043366 Driving circuit active matrix type organic light emitting diode device and method thereof
03/02/2006US20060043365 Thin film transistor array panel and manufacturing method thereof
03/02/2006US20060043363 Vertical organic FET and method for manufacturing same
03/02/2006US20060043362 Organic electroluminescent element and method of manufacturing the same
03/02/2006US20060043361 White light-emitting organic-inorganic hybrid electroluminescence device comprising semiconductor nanocrystals
03/02/2006US20060043360 Organic light emitting display with circuit measuring pad and method of fabricating the same
03/02/2006US20060043359 Field-effect transistor
03/02/2006US20060043358 Polymer thin and polymer thin film device using same
03/02/2006US20060043357 Quantum computer apparatus
03/02/2006US20060043356 Semiconductor optical device having quantum well structure and its manufacturing method
03/02/2006US20060043355 PRAMS having phase-change layer pattern with electrode contact area and methods of forming the same
03/02/2006US20060043354 Reactive sputtering process for optimizing the thermal stability of thin chalcogenide layers
03/02/2006DE10297732T5 Mehrdomänen-Flüssigkristallanzeige und ein Dünnfilmtransistorsubstrat derselben The multi-domain liquid crystal display and a thin film transistor substrate of the same
03/02/2006DE10233421B4 Verfahren zum Ausbilden eines doppelimplantierten Gates A method for forming a gate doppelimplantierten
03/02/2006DE10226914B4 Verfahren zur Herstellung einer Spacerstruktur A method for producing a spacer structure
03/02/2006DE102005040842A1 Halbleitervorrichtung mit Superjunction-Struktur und Verfahren zu ihrer Herstellung A semiconductor device having super junction structure and process for their preparation
03/02/2006DE102005020410A1 Transistorstruktur und zugehöriges Herstellungsverfahren Transistor structure and manufacturing method thereof
03/02/2006DE102004047073B3 Production of edge passivation on silicon carbide-based semiconductors uses amorphous, semi-insulating layer of material with larger bandgap than silicon carbide
03/02/2006DE102004041904A1 Leistungstransistor Power transistor
03/02/2006DE102004041892A1 Trench transistor with cell field containing several active cell field trenches and several edge trenches, each surrounding cell field, at least partly, or located adjacent to cell field
03/02/2006DE102004041556A1 Laterale Halbleiterdiode und Verfahren zu deren Herstellung Lateral semiconductor diode and methods for their preparation
03/02/2006DE102004041198A1 Lateral semiconductor component to act as a field-effect transistor has a semiconductor body with first and second sides forming front and rear sides respectively
03/02/2006DE102004005082B4 Kondensator mit einem Dielektrikum aus einer selbstorganisierten Monoschicht einer organischen Verbindung und Verfahren zu dessen Herstellung Capacitor having a dielectric made of a self-assembled monolayer of an organic compound and methods for its preparation
03/02/2006DE10151198B4 Verfahren zum Herstellen eines Isolationskragens in einer Grabenstruktur eines Halbleiterbauelements A method of manufacturing an insulation collar in a grave structure of a semiconductor device
03/02/2006CA2572244A1 Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
03/01/2006EP1631116A1 Sound detecting mechanism and process for manufacturing the same