| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 03/09/2006 | US20060049481 Planar inductive component and an integrated circuit comprising a planar inductive component |
| 03/09/2006 | US20060049480 Method of and apparatus for measuring stress of semiconductor material |
| 03/09/2006 | US20060049479 Capacitor placement for integrated circuit packages |
| 03/09/2006 | US20060049474 High performance spin-valve transistor |
| 03/09/2006 | US20060049473 Spin polarization of charge carriers |
| 03/09/2006 | US20060049472 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements |
| 03/09/2006 | US20060049471 Encapsulated microstructure and method of producing one such microstructure |
| 03/09/2006 | US20060049470 Double layer polysilicon gate electrode |
| 03/09/2006 | US20060049469 Integrated semiconductor circuit comprising a transistor and a strip conductor |
| 03/09/2006 | US20060049468 Interconnection architecture and method of assessing interconnection architecture |
| 03/09/2006 | US20060049466 Semiconductor device having fuse and protection circuit |
| 03/09/2006 | US20060049465 Power semiconductor device for preventing punchthrough and manufacturing method thereof |
| 03/09/2006 | US20060049464 Semiconductor devices with graded dopant regions |
| 03/09/2006 | US20060049462 High voltage transistor and method for fabricating the same |
| 03/09/2006 | US20060049461 Thin-film transistor with vertical channel region |
| 03/09/2006 | US20060049459 Semiconductor device and manufacturing method thereof |
| 03/09/2006 | US20060049458 Power semiconductor device having an improved ruggedness |
| 03/09/2006 | US20060049457 Semiconductor device and method of fabricating the same |
| 03/09/2006 | US20060049456 Insulated gate semiconductor device and method of manufacturing insulated gate semiconductor device |
| 03/09/2006 | US20060049455 Semiconductor devices with local recess channel transistors and methods of manufacturing the same |
| 03/09/2006 | US20060049454 ACCUFET with Schottky source contact |
| 03/09/2006 | US20060049453 Vertical insulated gate transistor and manufacturing method |
| 03/09/2006 | US20060049452 Novel LDMOS IC technology with low threshold voltage |
| 03/09/2006 | US20060049451 Non-volatile memory integrated circuit |
| 03/09/2006 | US20060049450 Non-volatile memory integrated circuit |
| 03/09/2006 | US20060049449 Non-volatile semiconductor memory and method for fabricating a non-volatile semiconductor memory |
| 03/09/2006 | US20060049448 Method and apparatus for operating a string of charge trapping memory cells |
| 03/09/2006 | US20060049447 Antimony precursor, phase-change memory device using the antimony precursor, and method of manufacturing the phase-change memory device |
| 03/09/2006 | US20060049446 Method for manufacturing a semiconductor device |
| 03/09/2006 | US20060049444 Semiconductor device and method of fabricating the same |
| 03/09/2006 | US20060049443 Flip FERAM cell and method to form same |
| 03/09/2006 | US20060049442 Methods for fabricating ferroelectric memory devices |
| 03/09/2006 | US20060049441 Magnetoresistive random access memory with reduced switching field variation |
| 03/09/2006 | US20060049440 Ferroelectric memory arrangement |
| 03/09/2006 | US20060049436 Semiconductor component with a MOS transistor |
| 03/09/2006 | US20060049435 Vertical JFET as used for selective component in a memory array |
| 03/09/2006 | US20060049434 Semiconductor device and manufacturing method thereof |
| 03/09/2006 | US20060049431 Solid-state image sensor |
| 03/09/2006 | US20060049430 Field-effect transistor, complementary field-effect transistor, and method of manufacturing field-effect transistor |
| 03/09/2006 | US20060049429 Field effect transistor (FET) having wire channels and method of fabricating the same |
| 03/09/2006 | US20060049428 Tft electronic devices and their manufacture |
| 03/09/2006 | US20060049427 Field effect type semiconductor device |
| 03/09/2006 | US20060049426 Nitride based hetero-junction field effect transistor |
| 03/09/2006 | US20060049409 Method for forming integrated circuit utilizing dual semiconductors |
| 03/09/2006 | US20060049408 Display device and method of manufacturing the same |
| 03/09/2006 | US20060049406 Power semiconductor and method of fabrication |
| 03/09/2006 | US20060049405 Passive matrix display device |
| 03/09/2006 | US20060049404 Transistor and display device having the same |
| 03/09/2006 | US20060049403 Substrate for a display device, liquid crystal display device having the same and method of manufacturing the same |
| 03/09/2006 | US20060049402 Thin film transistor array substrate and fabricating method thereof |
| 03/09/2006 | US20060049401 Nitride epitaxial layer structure and method of manufacturing the same |
| 03/09/2006 | US20060049399 Germanium-on-insulator fabrication utilizing wafer bonding |
| 03/09/2006 | US20060049398 Field-effect transistor comprising a layer of an organic semiconductor |
| 03/09/2006 | US20060049396 Sealing of electronic device using absorbing layer for glue line |
| 03/09/2006 | US20060049395 Field-effect transistor |
| 03/09/2006 | US20060049394 Layered composite film incorporating a quantum dot shift register |
| 03/09/2006 | US20060049393 Field emission-type electron source and method of producing the same |
| 03/09/2006 | US20060049392 Process for manufacturing an array of cells including selection bipolar junction transistors |
| 03/09/2006 | US20060049389 Electric device comprising phase change material |
| 03/09/2006 | US20060048894 Dry etching apparatus, etching method, and method of forming a wiring |
| 03/09/2006 | US20060048706 Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device by using the same |
| 03/09/2006 | DE19807009B4 Verfahren zur Herstellung einer nichtflüchtigen Speichereinrichtung mit Programmierleitungen A method of manufacturing a nonvolatile memory device comprising programming lines |
| 03/09/2006 | DE19527682B4 Verfahren zur Herstellung einer EEPROM-Flashzelle A method of manufacturing a flash EEPROM cell |
| 03/09/2006 | DE102005041335A1 Semiconductor element for a power semiconductor component has a semiconductor body, a front side, an inner area, an edge area and a field stop zone |
| 03/09/2006 | DE102005040624A1 Halbleiterbauteil und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation |
| 03/09/2006 | DE102005039564A1 Halbleiterbauteil und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation |
| 03/09/2006 | DE102005011348A1 Halbleitervorrichtung Semiconductor device |
| 03/09/2006 | DE102004042758A1 Halbleiterbauteil Semiconductor device |
| 03/09/2006 | DE102004042156A1 Transistor mit asymmetrischem Source/Drain- und Halo- Implantationsgebiet und Verfahren zum Herstellen desselben Of the same transistor with an asymmetrical source / drain and halo implant region and process for producing |
| 03/08/2006 | EP1633005A1 Monolithically integrated capacitor |
| 03/08/2006 | EP1633004A2 Guard ring for semiconductor devices |
| 03/08/2006 | EP1633003A2 GaN epitaxial substrate and semiconductor element |
| 03/08/2006 | EP1633001A1 Frequency converting circuit of direct conversion reception, semiconductor integrated circuit thereof, and direct conversion receiver |
| 03/08/2006 | EP1633000A1 Mixer circuit |
| 03/08/2006 | EP1631991A1 Punch-through diode and method of processing the same |
| 03/08/2006 | EP1631990A2 Field effect transistor, especially a double diffused field effect transistor, and method for the production thereof |
| 03/08/2006 | EP1631989A1 Gate-induced strain for performance improvement of a mos semiconductor device |
| 03/08/2006 | EP1631611A1 Highly pure, ion-free semiconducting polythiophenes, method for the production thereof, and use thereof for the production of electronic components |
| 03/08/2006 | EP1573804A4 Methods of forming structure and spacer and related finfet |
| 03/08/2006 | EP1463628A4 Nanocrystal structures |
| 03/08/2006 | EP1362376B1 Pulsed bistable bidirectional electronic switch |
| 03/08/2006 | EP0608335B1 Structure for suppression of field inversion caused by charge build-up in the dielectric |
| 03/08/2006 | CN2763849Y LCD device |
| 03/08/2006 | CN2763836Y Storage capacitance and LCD using same |
| 03/08/2006 | CN1745480A Array board liquid crystal display and method for producing array board |
| 03/08/2006 | CN1745479A Edge termination for silicon carbide devices |
| 03/08/2006 | CN1745473A Method for producing bit lines for ucp flash memories |
| 03/08/2006 | CN1745472A Adaptive negative differential resistance device |
| 03/08/2006 | CN1745468A Large-area nanoenabled macroelectronic substrates and uses therefor |
| 03/08/2006 | CN1745467A Method for manufacturing display device |
| 03/08/2006 | CN1745430A Spin detection magnetic memory |
| 03/08/2006 | CN1744330A Floating gate having enhanced charge retention |
| 03/08/2006 | CN1744329A Semiconductor device having super junction structure and method for manufacturing the same |
| 03/08/2006 | CN1744328A Multiple-charcter storage device and forming method thereof |
| 03/08/2006 | CN1744327A Thin-layer chemical transistor and making method |
| 03/08/2006 | CN1744326A 外延基底和半导体元件 Epitaxial substrate and the semiconductor element |
| 03/08/2006 | CN1744317A Monolithically integrated capacitor |
| 03/08/2006 | CN1744301A Sapphire substrate, epitaxial substrate and semiconductor device |
| 03/08/2006 | CN1744299A Memory cell with an asymmetrical area |
| 03/08/2006 | CN1744297A 半导体装置 Semiconductor device |