H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2006
10/12/2006	US20060226421 Amine compound and uses thereof
10/12/2006	US20060226420 Organic thin-film transistor and process for fabricating the same, active matrix type display employing it and radio identification tag
10/12/2006	US20060226419 Encapsulation for an organic electronics component and production method therefor
10/12/2006	US20060226417 Photodetector
10/12/2006	US20060226415 Semiconductor integrated circuit device and vehicle-mounted radar system using the same
10/12/2006	US20060226414 Group III-V nitride-based semiconductor substrate and method of making same
10/12/2006	US20060226413 Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices
10/12/2006	US20060226412 Thick semi-insulating or insulating epitaxial gallium nitride layers and devices incorporating same
10/12/2006	US20060226411 Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same
10/12/2006	US20060226410 Heating phase change material
10/12/2006	US20060226409 Structure for confining the switching current in phase memory (PCM) cells
10/12/2006	US20060226369 Method and an aparatus for detecting water on a ship's deck
10/12/2006	DE19954845B4 Nichtflüchtige ferroelektrische Speicherzelle vom NAND-Typ, sowie nichtflüchtiger ferroelektrischer Speicher unter Verwendung einer solchen A non-volatile ferroelectric memory cell of the NAND type, as well as non-volatile ferroelectric memory using such a
10/12/2006	DE19930781B4 Diode mit Metall-Halbleiterkontakt und Verfahren zu ihrer Herstellung Diode metal-semiconductor contact and procedures for their preparation
10/12/2006	DE19900648B4 Leistungs-MOSFET Power MOSFET
10/12/2006	DE19818299B4 Niederohmiger Hochvolt-Feldeffekttransistor Low impedance high-voltage field-effect transistor
10/12/2006	DE10300949B4 Halbleitervorrichtung mit Herstellungsverfahren dafür Semiconductor device manufacturing method thereof
10/12/2006	DE10212661B4 Halbleitervorrichtung Semiconductor device
10/12/2006	DE102006004420A1 Vorrichtung zur Umwandlung der elektrischen Energie A device for converting the electrical energy
10/12/2006	DE102005014744A1 Trench transistor, has field formed between trenches and having drift field and body field with body contact and source fields, where breakthrough is formed in field for increasing avalanche rigidity in depth lying in area of trench bottom
10/12/2006	CA2603477A1 Semiconductor device including a superlattice with regions defining a semiconductor junction
10/12/2006	CA2603407A1 Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction
10/11/2006	EP1710901A1 A motor drive inverter that includes III-Nitride based power semiconductor devices
10/11/2006	EP1710848A1 Electrode of n-type nitride semiconductor and semiconductor device having the electrode
10/11/2006	EP1710843A1 Integrated power device
10/11/2006	EP1710842A1 Method for fabricating a bipolar transistor and a MISFET semiconductor device
10/11/2006	EP1710841A2 Gallium nitride based semiconductor device and method of manufacturing same
10/11/2006	EP1710831A1 Semiconductor device
10/11/2006	EP1710830A2 Silicon on insulator structure having intrinsic gettering
10/11/2006	EP1710085A2 Semiconductor device, ink tank provided with such semiconductor device, ink jet cartridge, ink jet recorsding apparatus, method for manufacturing such semiconductor device, and communication system, method for controlling pressure, memory element, security system of ink jet recording apparatus
10/11/2006	EP1709691A2 Semiconductor structure
10/11/2006	EP1709689A1 Transistor with workfunction-induced charge layer
10/11/2006	EP1709688A1 Semiconductor device
10/11/2006	EP1709686A2 Apparatus incorporating small-feature-size and large-feature-size components and method for making same
10/11/2006	EP1709682A1 Pocket implant for complementary bit disturb improvement and charging improvement of sonos memory cell
10/11/2006	EP1709680A2 Vertical gate cmos with lithography-independent gate length
10/11/2006	EP1709679A1 System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
10/11/2006	EP1709678A1 Stress free etch processing in combination with a dynamic liquid meniscus
10/11/2006	EP1709672A1 Structure and method for low vss resistance and reduced dibl in a floating gate memory cell
10/11/2006	EP1709671A1 Method of forming thin sgoi wafers with high relaxation and low stacking fault defect density
10/11/2006	EP1709573A1 Semiconductor device
10/11/2006	EP1518098B1 High-pressure sensor comprising silicon membrane and solder layer
10/11/2006	EP0939974B1 Manufacture of a semiconductor device with a mos transistor having an ldd structure
10/11/2006	CN2826700Y Poly-GeSi Schottky diode
10/11/2006	CN2826699Y Germanium-silicon Schottky diode
10/11/2006	CN2826698Y Germanium-silicon Schottky diode
10/11/2006	CN2826697Y 物理量传感器 Physical sensors
10/11/2006	CN2826696Y Power transistor chip little unit and bipolar NPN power transistor chip
10/11/2006	CN1846462A Organic semiconductor device and method for manufacturing same
10/11/2006	CN1846313A Structure and method for metal replacement gate of high performance device
10/11/2006	CN1846312A Electrode substrate, thin film transistor, display device and their production
10/11/2006	CN1846311A Stackable electronic assembly
10/11/2006	CN1846310A Nitride semiconductor device and manufacturing method thereof
10/11/2006	CN1846309A Integrated circuit having pairs of parallel complementary finfets
10/11/2006	CN1846305A Method for integrating metals having different work functions to form cmos gates having a high-K dielectric and related structure
10/11/2006	CN1846304A Method for forming a semiconductor device having isolation regions
10/11/2006	CN1845346A Method for producing gallium nitride based III-V group compound semiconductor device
10/11/2006	CN1845341A Thin film transistor and method of fabricating the same
10/11/2006	CN1845340A Thin film transistor and method of fabricating the same
10/11/2006	CN1845339A Phase-change thin film FET unit device and its making method
10/11/2006	CN1845338A Semiconductor element, memory element, method for operating memory unit and memory element
10/11/2006	CN1845337A FET design with long gate and dense pitch and manufacturing method thereof
10/11/2006	CN1845336A Gate electrode stack and use of a gate electrode stack
10/11/2006	CN1845332A SOI structure with low k dielectric buried layer and its power device
10/11/2006	CN1845301A Extraction method for asymmetric equivalent circuit model parameter of silicon based spiral inductor
10/11/2006	CN1844992A 液晶显示器件 Liquid crystal display device
10/11/2006	CN1844980A Display panel, display apparatus having the same, and method of manufacturing the same
10/11/2006	CN1844979A Liquid crystal display device and method for manufacturing the same
10/11/2006	CN1279626C Shottky barrier diode and its manufacture
10/11/2006	CN1279625C Shottky barrier diode and its manufacture
10/11/2006	CN1279624C MOS FET and its producing method
10/11/2006	CN1279623C TFT substrate, liquid crystal display device using the same, and its manufacturing method
10/11/2006	CN1279622C Matrix array devices with flexible substrates
10/11/2006	CN1279621C Electronic devices comprising thin-film transistors, and their mfg.
10/11/2006	CN1279620C Performance improved DMOS transistor structure
10/11/2006	CN1279602C Method for forming semiconductor device
10/11/2006	CN1279594C Liquid crystal display manufacturing process and polysilicon layer forming process
10/11/2006	CN1279509C Display apparatus
10/11/2006	CN1279508C Display apparatus
10/11/2006	CN1279340C Pressure sensor
10/10/2006	US7120886 Device for determining the mask version utilized for each metal layer of an integrated circuit
10/10/2006	US7120057 Semiconductor memory device with a stacked gate including a floating gate and a control gate
10/10/2006	US7120053 Semiconductor intergrated circuit device with a main cell array and a fuse cell array whose word lines and bit lines are extended in the same directions
10/10/2006	US7119870 Liquid crystal display device having particular drain lines and orientation control window
10/10/2006	US7119867 Liquid crystal display device and method of manufacturing the same
10/10/2006	US7119857 Apparatus and manufacture method for flat display
10/10/2006	US7119777 Pixel structure of active organic light emitting diode
10/10/2006	US7119776 Image display device
10/10/2006	US7119448 Main power inductance based on bond wires for a switching power converter
10/10/2006	US7119447 Direct fet device for high frequency application
10/10/2006	US7119446 Semiconductor device
10/10/2006	US7119443 Titanium nitride film formed over substrate and containing halogen element; chemical vapor deposited second conductive film using material gas with halogen-free element; chemical mechanical polishing or sputtering
10/10/2006	US7119442 Semiconductor device
10/10/2006	US7119441 Semiconductor interconnect structure
10/10/2006	US7119438 Method of arranging microspheres with liquid, microsphere arranging device, and semiconductor device
10/10/2006	US7119435 Semiconductor device with source/drain extension layer
10/10/2006	US7119427 Stacked BGA packages
10/10/2006	US7119426 Semiconductor device and manufacturing method of same
10/10/2006	US7119417 Underlayer directly underlying channel layer contains germanium; silicide layer forming part of source and drain electrodes has lower concentration of germanium; low-resistance silicide phase
10/10/2006	US7119416 Bipolar transistor structure with self-aligned raised extrinsic base and methods

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