H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2006
10/19/2006	US20060231863 Manufacturing process of a chip package structure
10/19/2006	US20060231862 Ballistic semiconductor device
10/19/2006	US20060231861 Field effect transistor and method of manufacturing the same
10/19/2006	US20060231859 Heterojunction bipolar transistor
10/19/2006	US20060231858 Display device and manufacturing method of the display device
10/19/2006	US20060231857 Method for making a semiconductor device including a memory cell with a negative differential resistance (ndr) device
10/19/2006	US20060231848 Light emitting diode package for enhancing light extraction
10/19/2006	US20060231842 Display device
10/19/2006	US20060231841 Silicon carbide semiconductor device
10/19/2006	US20060231840 Active matrix substrate, method of making the substrate, and display device
10/19/2006	US20060231839 Method of treating inorganic oxide film, electronic device substrate, method of manufacturing electronic device substrate, liquid crystal panel, and electronic apparatus
10/19/2006	US20060231838 Liquid crystal display
10/19/2006	US20060231837 Thin-film assembly and method for producing said assembly
10/19/2006	US20060231836 Surge voltage protection diode and method of forming the same
10/19/2006	US20060231832 Liquid crystalline organic compound, organic semiconductor structure, organic semiconductor device, and process for producing liquid crystalline organic compound
10/19/2006	US20060231831 Light emitting display device and method of manufacturing the same
10/19/2006	US20060231830 Display device and a method of manufacturing the same
10/19/2006	US20060231829 TFT gate dielectric with crosslinked polymer
10/19/2006	US20060231828 Light-emitting diode
10/19/2006	US20060231827 Functional organic thin film, organic thin-film transistor, pi-electron conjugated molecule-containing silicon compound, and methods of forming them
10/19/2006	US20060231825 Use of quasi-one-dimensional transition metal ternary compounds and quasi-one-dimensional transition metal chacogenide compounds as electron emitters
10/19/2006	US20060231823 Structure for amorphous carbon based non-volatile memory
10/19/2006	US20060231738 CCD device
10/19/2006	DE112004002606T5 Herstellungsverfahren für Halbleiterbauteil Manufacturing method for semiconductor device
10/19/2006	DE10324550B4 Herstellungsverfahren für eine NROM-Halbleiterspeichervorrichtung Manufacturing method of a semiconductor memory device NROM
10/19/2006	DE102005031908B3 Semiconductor component e.g. power diode, has channel stop zone whose doping concentration contantly decrease by distance of ten micrometer sectionally in lateral direction towards active component zone
10/19/2006	DE10122364B4 Kompensationsbauelement, Schaltungsanordnung und Verfahren Compensation device, circuit and method
10/19/2006	DE10109172B4 Strombegrenzungseinrichtung Current-limiting device
10/19/2006	DE10108046B4 Halbleiterbauelement Semiconductor device
10/18/2006	EP1713130A1 High breakdown voltage wide gap semiconductor device and power device
10/18/2006	EP1713129A2 Threshold voltage shift in NROM cells
10/18/2006	EP1713128A1 IGBT and electric power conversion device using it
10/18/2006	EP1713127A2 Device for improving negative potential immunity of an integrated circuit
10/18/2006	EP1713117A1 Silicon carbide semiconductor device and process for producing the same
10/18/2006	EP1713116A1 PROCESS FOR PRODUCING n-TYPE SEMICONDUCTOR DIAMOND AND n-TYPE SEMICONDUCTOR DIAMOND
10/18/2006	EP1711968A2 Phototransistor
10/18/2006	EP1711966A2 Vertical fin-fet mos devices
10/18/2006	EP1711965A1 Transistor manufacture
10/18/2006	EP1711964A1 Semiconductor structure
10/18/2006	EP1711960A1 Method of fabricating a mono-crystalline emitter
10/18/2006	EP1711959A1 Transistor with doped gate dielectric
10/18/2006	EP1678765A4 Semiconductor substrate incorporating a neutron conversion layer
10/18/2006	EP1644985A4 Full spectrum phosphor blends for white light generation with led chips
10/18/2006	EP1428064B1 Electrostatic discharge protection for pixellated electronic device
10/18/2006	EP1421630B1 Method of depositing an oxide layer on a substrate and a photovoltaic cell using said substrate
10/18/2006	EP1110236B1 Non-uniform minority carrier lifetime distributions in high performance silicon power devices
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10/18/2006	CN1848455A Semiconductor device and method of manufacturing the same
10/18/2006	CN1848454A Structure and method for manufacturing strained finfet
10/18/2006	CN1848453A Semiconductor device and method of manufacturing same
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10/18/2006	CN1848434A 半导体器件 Semiconductor devices
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10/18/2006	CN1280919C Power MOSFET and method of making same
10/18/2006	CN1280918C Reference voltage semiconductor
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10/18/2006	CN1280916C Bipolar junction transistors, and method of making same
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10/17/2006	US7123323 Liquid crystal display device with conductive light shielding film and contact holes
10/17/2006	US7123320 Electro-optical device

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