Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2006
10/10/2006US7119415 Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof
10/10/2006US7119414 Fuse layout and method trimming
10/10/2006US7119413 High-voltage transistor having shielding gate
10/10/2006US7119412 Semiconductor device and method for manufacturing the same
10/10/2006US7119410 Magneto-resistive effect element and magnetic memory
10/10/2006US7119408 Semiconductor device and method for fabricating the same
10/10/2006US7119407 Semiconductor device and manufacturing method thereof
10/10/2006US7119406 Semiconductor integrated circuit device having deposited layer for gate insulation
10/10/2006US7119405 Implantation method to improve ESD robustness of thick gate-oxide grounded-gate NMOSFET's in deep-submicron CMOS technologies
10/10/2006US7119403 High performance strained CMOS devices
10/10/2006US7119402 Field effect transistor and manufacturing method thereof
10/10/2006US7119401 Tunable semiconductor diodes
10/10/2006US7119400 Isotopically pure silicon-on-insulator wafers and method of making same
10/10/2006US7119399 LDMOS transistor
10/10/2006US7119397 Double blanket ion implant method and structure
10/10/2006US7119396 NROM device
10/10/2006US7119395 Memory cell with nanocrystals or nanodots
10/10/2006US7119394 Nonvolatile memory device and method for fabricating the same
10/10/2006US7119393 Transistor having fully-depleted junctions to reduce capacitance and increase radiation immunity in an integrated circuit
10/10/2006US7119391 System and method of manufacturing a substrate device
10/10/2006US7119390 Dynamic random access memory and fabrication thereof
10/10/2006US7119389 Dynamic random access memory cells having laterally offset storage nodes
10/10/2006US7119388 MRAM device fabricated using chemical mechanical polishing
10/10/2006US7119386 Versatile system for triple-gated transistors with engineered corners
10/10/2006US7119385 Semiconductor apparatus having first and second gate electrodes
10/10/2006US7119384 Field effect transistor and method for fabricating it
10/10/2006US7119383 Arrangement of wiring lines including power source lines and channel wirings of a semiconductor integrated circuit having plural cells
10/10/2006US7119382 Heterobipolar transistor and method of fabricating the same
10/10/2006US7119380 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors
10/10/2006US7119379 Semiconductor device
10/10/2006US7119376 Light emitting diode component capable of emitting white lights
10/10/2006US7119375 Light emitting diode and method for manufacturing the same
10/10/2006US7119374 Gallium nitride based light emitting device and the fabricating method for the same
10/10/2006US7119370 Electro-optical device, method of manufacturing the same, and electronic instrument
10/10/2006US7119369 FET having epitaxial silicon growth
10/10/2006US7119368 Thin film transistor array panel and manufacturing method thereof
10/10/2006US7119367 Display apparatus
10/10/2006US7119366 Semiconductor device, EL display device, liquid crystal display device, and calculating device
10/10/2006US7119365 Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
10/10/2006US7119364 Semiconductor device and manufacturing method thereof
10/10/2006US7119363 Thin film transistor formed on a transparent substrate
10/10/2006US7119361 Luminescence stabilization of anodically oxidized porous silicon layers
10/10/2006US7119359 Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures
10/10/2006US7119358 Semiconductor structure for use in the near infrared region and a method of manufacturing this semiconductor structure
10/10/2006US7119357 Nanotube based multi-level memory structure
10/10/2006US7119356 Forming closely spaced electrodes
10/10/2006US7119355 Lateral phase change memory and method therefor
10/10/2006US7119353 Electric device with phase change material and method of manufacturing the same
10/10/2006US7119272 Gas specie electron-jump chemical energy converter
10/10/2006US7119026 Basic material for patterning and patterning method
10/10/2006US7119024 Method and structure for a self-aligned silicided word line and polysilicon plug during the formation of a semiconductor device
10/10/2006US7119023 Process integration of SOI FETs with active layer spacer
10/10/2006US7119022 Manufacturing method of semiconductor device
10/10/2006US7119013 Method for fabricating semiconductor device with fine patterns
10/10/2006US7119011 Semiconductor device and manufacturing method thereof
10/10/2006US7118995 Yield improvement in silicon-germanium epitaxial growth
10/10/2006US7118994 Semiconductor device and method for manufacturing same
10/10/2006US7118982 Emitter and method of making
10/10/2006US7118981 Method of fabricating an integrated silicon-germanium heterobipolar transistor and an integrated silicon-germanium heterobipolar transistor
10/10/2006US7118979 Method of manufacturing transistor having germanium implant region on the sidewalls of the polysilicon gate electrode
10/10/2006US7118978 Semiconductor device and method for producing the same
10/10/2006US7118976 Methods of manufacturing MOSFETs in semiconductor devices
10/10/2006US7118973 Method of forming a transistor with a channel region in a layer of composite material
10/10/2006US7118972 Method of manufacture of a semiconductor device
10/10/2006US7118971 Method for fabricating trench power device
10/10/2006US7118970 Methods of fabricating silicon carbide devices with hybrid well regions
10/10/2006US7118969 Method of manufacturing a floating gate and method of manufacturing a non-volatile semiconductor memory device comprising the same
10/10/2006US7118963 Semiconductor memory integrated circuit and its manufacturing method
10/10/2006US7118962 Nonvolatile memory device and method for manufacturing the same
10/10/2006US7118961 Stitch and select implementation in twin MONOS array
10/10/2006US7118958 Method of manufacturing a metal-insulator-metal capacitor using an etchback process
10/10/2006US7118956 Trench capacitor and a method for manufacturing the same
10/10/2006US7118955 Method for the production of a semiconductor substrate comprising a plurality of gate stacks on a semiconductor substrate, and corresponding semiconductor structure
10/10/2006US7118953 Process of fabricating termination region for trench MIS device
10/10/2006US7118951 Method of isolating the current sense on power devices while maintaining a continuous stripe cell
10/10/2006US7118948 Semiconductor wafer having different impurity concentrations in respective regions
10/10/2006US7118947 Thin film transistor substrate of a horizontal electric field type LCD and fabricating method thereof
10/10/2006US7118946 Thin film transistor, circuit device and liquid crystal display
10/10/2006US7118945 Method of forming insulating layer and method of fabricating thin film transistor using the same
10/10/2006US7118944 Method for fabricating polycrystalline silicon thin film transistor
10/10/2006US7118937 Fabrication method of thin-film transistor array with self-organized organic semiconductor
10/10/2006US7118936 Organic dye-sensitized metal oxide semiconductor electrode and its manufacturing method, and organic dye-sensitized solar cell
10/10/2006US7118934 Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate
10/10/2006US7118813 used for coating epitaxial films in the fabrication of electronic and opto-electronic devices such as laser diodes, light emitting diodes, transistors and detectors
10/10/2006US7118812 Light-emitting layer containing a phosphorescent material that contains an organometallic complex of iridium fully complexed with indole ligand groups or of Ir, Rh, Os, Ru, Pt, and Pd and an isoindole compound; e.g., Tetrakis(2-phenyl-3,3-dimethylindole-N,C)( mu -dibromo)diiridium(III)
10/05/2006WO2006105461A1 Vertical memory device and method
10/05/2006WO2006105346A2 Small form factor downlight system
10/05/2006WO2006105136A1 Semiconductor device having a lateral channel
10/05/2006WO2006105052A1 Schottky barrier mosfet device and circuit
10/05/2006WO2006104918A2 Process for forming a planar diode using one mask
10/05/2006WO2006104549A1 Dual metal gate electrode semiconductor fabrication process and structure thereof
10/05/2006WO2006104219A1 Laser irradiation apparatus and method for manufacturing semiconductor device
10/05/2006WO2006104150A1 Semiconductor device producing method and semiconductor device
10/05/2006WO2006104069A1 Gate insulating film, organic transistor, method for manufacturing organic el display, and display
10/05/2006WO2006104068A1 Gate insulating film, organic transistor, method for manufacturing organic el display, and display
10/05/2006WO2006103853A1 Semiconductor device using titanium dioxide as active layer and method for manufacturing same
10/05/2006WO2006103836A1 Method and device of crystallizing thin film material
10/05/2006WO2006103825A1 Semiconductor device and method for manufacturing same
10/05/2006WO2006103634A2 Asymmetric high voltage mos device and method of fabrication
10/05/2006WO2006103446A1 Ccd device with charge multiplication register