Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2006
09/28/2006DE10220922B4 Flash-Speicherzelle, Anordnung von Flash-Speicherzellen und Verfahren zur Herstellung von Flash-Speicherzellen Flash memory cell array of flash memory cells and methods for the production of flash memory cells
09/28/2006DE102006012007A1 Power semiconductor module, has insulation layer covering upper and edge sides of chip, and inner housing section under release of source and gate contact surfaces of chip and contact terminal surfaces on source and gate outer contacts
09/28/2006DE102005062444A1 Gate commutated thyristor semiconductor device, has cathode connection connected with cathode post electrode by cathode flange, whereby cathode post electrode directly contacts cathode fin electrode
09/28/2006DE102004038874B4 1-Bit-SONOS-Speicherzelle und Herstellungsverfahren 1-bit SONOS memory cell, and manufacturing method
09/28/2006DE102004005774B4 Verfahren zur Herstellung von Gateelektroden in einem Feldplattentrench-Transistor sowie Feldplattentrench-Transistor A process for the production of gate electrodes in a field plate trench transistor and trench field plate transistor
09/28/2006DE10013219B4 Flüssigkristallanzeige-Vorrichtung A liquid crystal display device
09/28/2006CA2564424A1 Group iii nitride semiconductor device and epitaxial substrate
09/27/2006EP1705974A2 Low moisture absorptive circuitized substrate with reduced thermal expansion, method of making same, electrical assembly utilizing same, and information handling system utilizing same
09/27/2006EP1705715A1 Semiconductor device
09/27/2006EP1705714A2 Field effect transistor and method of manufacturing the same
09/27/2006EP1705713A2 Field-effect transistor
09/27/2006EP1705712A1 Method for manufacturing junction semiconductor device
09/27/2006EP1705711A1 Junction semiconductor device and method for manufacturing the same
09/27/2006EP1705710A1 Bipolar transistor and method of manufacturing this transistor
09/27/2006EP1705696A2 SiC semiconductor device
09/27/2006EP1705489A2 Sensor design and process
09/27/2006EP1704598A1 Transistor with quantum dots in its tunnelling layer
09/27/2006EP1704597A1 Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
09/27/2006EP1704596A2 Quantum dot optoelectronic devices with nanoscale epitaxial lateral overgrowth and methods of manufacture
09/27/2006EP1704595A2 Bridge field-effect transistor storage cell, device comprising said cells and method for producing a bridge field-effect transistor storage cell
09/27/2006EP1704590A1 Tri-gate transistors and mehtods to fabricate same
09/27/2006EP1464087A4 Rectifier of thermaly moving electrons and method for converting thermal energy into electric energy by using the same
09/27/2006EP1454349B1 Trilayered beam mems device and related methods
09/27/2006EP1212795A4 Sensing devices using chemically-gated single electron transistors
09/27/2006CN2821869Y High voltage diode without lead-plastic seal
09/27/2006CN2821868Y Mos field effect transisitor with isolation structure
09/27/2006CN1839491A Method for sealing thin film transistors
09/27/2006CN1839490A Vertical organic FET and method for manufacturing same
09/27/2006CN1839483A High-density FINFET integration scheme
09/27/2006CN1839482A Vertical nanotransistor, method for producing the same and memory assembly
09/27/2006CN1839481A Vertical nanotransistor, method for producing the same and memory assembly
09/27/2006CN1839480A Field effect transistor having increased carrier mobility
09/27/2006CN1839479A Semiconductor device and method for manufacturing semiconductor device
09/27/2006CN1839469A Basic cell, end section cell, wiring shape, wiring method, shield wiring structure
09/27/2006CN1839467A Semiconductor device
09/27/2006CN1839466A Method of forming freestanding semiconductor layer
09/27/2006CN1839300A 压力传感装置 Pressure sensing means
09/27/2006CN1838855A Circuit substrate and making method and multilayer circuit structure using it and information processing system
09/27/2006CN1838446A Free-standing electrostatically-doped carbon nanotube device and method for making same
09/27/2006CN1838435A Junction semiconductor device and method for manufacturing the same
09/27/2006CN1838434A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
09/27/2006CN1838433A Semiconductor device and image display apparatus
09/27/2006CN1838432A Wafer for semiconductor device fabrication, method of manufacture of same, and field effect transistor
09/27/2006CN1838431A Bipolar device
09/27/2006CN1838430A Mis-type semiconductor device and complementary mis semiconductor device
09/27/2006CN1838429A Composition graded layer structure and method for forming the same
09/27/2006CN1838428A Sic semiconductor device
09/27/2006CN1838415A Nonvolatile semiconductor storage device and manufacturing method therefor
09/27/2006CN1838320A Nonvolatile semiconductor memory device
09/27/2006CN1837936A Liquid crystal display and method
09/27/2006CN1837935A Electro-optical device, method of manufacturing the same, and electronic apparatus
09/27/2006CN1837905A 柔性液晶显示器及其制造方法 Flexible liquid crystal display and manufacturing method
09/27/2006CN1277339C Method for fabricating semiconductor light emitting device
09/27/2006CN1277317C Power semiconductor device and manufacturing method thereof
09/27/2006CN1277316C Vertical high-power field-effect transistor unit structure
09/27/2006CN1277315C 半导体器件 Semiconductor devices
09/27/2006CN1277312C Semiconductor device and its producing method
09/27/2006CN1277311C Electrostatic discharge protection device and IC
09/27/2006CN1277296C Field effect transistor structure possessing strain silicon germanium layer epitaxy and its manufacturing method
09/26/2006US7114140 Semiconductor device, semiconductor device design method, semiconductor device design method recording medium, and semiconductor device design support system
09/26/2006US7113967 Efficient quantum computing operations
09/26/2006US7113661 Semiconductor device and method for manufacturing the same
09/26/2006US7113429 Nor flash memory cell with high storage density
09/26/2006US7113428 Method for operating a memory cell array
09/26/2006US7113423 Method of forming a negative differential resistance device
09/26/2006US7113252 Method of mending breakage of line in display device
09/26/2006US7113245 Electro-optical device comprising a precharge circuit
09/26/2006US7113242 Liquid crystal display and thin film transistor panel therefor
09/26/2006US7113233 Thin film transistor array panel with varying coupling capacitance between first and second pixel electrodes
09/26/2006US7112881 Semiconductor device
09/26/2006US7112872 Flexible semiconductor device with groove(s) on rear side of semiconductor substrate
09/26/2006US7112870 Semiconductor integrated circuit device including dummy patterns located to reduce dishing
09/26/2006US7112868 IGBT with monolithic integrated antiparallel diode
09/26/2006US7112867 Resistive isolation between a body and a body contact
09/26/2006US7112866 Method to form a cross network of air gaps within IMD layer
09/26/2006US7112865 Diode and method for manufacturing the same
09/26/2006US7112860 Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
09/26/2006US7112859 Stepped tip junction with spacer layer
09/26/2006US7112858 Semiconductor device and manufacturing method of the same
09/26/2006US7112857 Devices with different electrical gate dielectric thicknesses but with substantially similar physical configurations
09/26/2006US7112856 Semiconductor device having a merged region and method of fabrication
09/26/2006US7112855 Low ohmic layout technique for MOS transistors
09/26/2006US7112854 Thin-film transistor and method of fabricating the same
09/26/2006US7112853 System for ESD protection with extra headroom in relatively low supply voltage integrated circuits
09/26/2006US7112851 Field effect transistor with electroplated metal gate
09/26/2006US7112849 Method of preventing semiconductor layers from bending and semiconductor device formed thereby
09/26/2006US7112846 Thin film transistors on plastic substrates with reflective coatings for radiation protection
09/26/2006US7112845 Double gate trench transistor
09/26/2006US7112844 Semiconductor device and manufacturing method thereof
09/26/2006US7112843 Semiconductor device with low resistance region
09/26/2006US7112842 Nonvolatile memory device and method of manufacturing the same
09/26/2006US7112841 Graded composition metal oxide tunnel barrier interpoly insulators
09/26/2006US7112838 Multipurpose metal fill
09/26/2006US7112837 MFIS ferroelectric memory array
09/26/2006US7112836 Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method
09/26/2006US7112835 Semiconductor device including a capacitance
09/26/2006US7112834 Gate etch process
09/26/2006US7112833 Semiconductor device and manufacturing method thereof
09/26/2006US7112832 Transistor having multiple channels
09/26/2006US7112831 Ternary content addressable memory cell