H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2006
10/17/2006	US7123314 Thin-film transistor with set trap level densities, and method of manufactures
10/17/2006	US7122954 Electro-optical device, method of manufacturing the same, and electronic apparatus
10/17/2006	US7122942 Electrostatic RF MEMS switches
10/17/2006	US7122909 Wiring board, stacked wiring board and method of manufacturing the same, semiconductor device and method of manufacturing the same, circuit board, and electronic instrument
10/17/2006	US7122904 Semiconductor packaging device and manufacture thereof
10/17/2006	US7122903 Contact plug processing and a contact plug
10/17/2006	US7122902 Semiconductor device
10/17/2006	US7122901 Semiconductor device
10/17/2006	US7122899 Semiconductor device and production process
10/17/2006	US7122896 Mounting structure of electronic component, electro-optic device, electronic equipment, and method for mounting electronic component
10/17/2006	US7122893 Semiconductor package structure
10/17/2006	US7122888 Semiconductor device, electrical inspection method thereof, and electronic apparatus including the semiconductor device
10/17/2006	US7122881 Wiring board and circuit module
10/17/2006	US7122879 Bipolar transistor with high dynamic performances
10/17/2006	US7122878 Method to fabricate high reliable metal capacitor within copper back-end process
10/17/2006	US7122877 Semiconductor device and method for producing the same
10/17/2006	US7122876 Isolation-region configuration for integrated-circuit transistor
10/17/2006	US7122875 Semiconductor device
10/17/2006	US7122874 Electronic package having a sealing structure on predetermined area, and the method thereof
10/17/2006	US7122873 Hybrid solid state/electrochemical photoelectrode for hyrodrogen production
10/17/2006	US7122871 Integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrations
10/17/2006	US7122870 Methods of forming a multilayer stack alloy for work function engineering
10/17/2006	US7122869 Nonvolatile semiconductor memory device in which selection transistors and memory transistors have different impurity concentration distributions
10/17/2006	US7122868 Semiconductor integrated circuit device
10/17/2006	US7122867 Triple well structure and method for manufacturing the same
10/17/2006	US7122866 Semiconductor memory device with a stacked gate including a floating gate and a control gate and method of manufacturing the same
10/17/2006	US7122864 Semiconductor substrate having a partial SOI structure, method of manufacturing the same, a semiconductor device having a partial SOI structure, and method of manufacturing the same
10/17/2006	US7122862 Reduction of channel hot carrier effects in transistor devices
10/17/2006	US7122861 Semiconductor device and manufacturing method thereof
10/17/2006	US7122860 Trench-gate semiconductor devices
10/17/2006	US7122859 Semiconductor device with switching element and corresponding driving circuit formed on a common semiconductor substrate, and liquid emitting apparatus that includes the semiconductor device
10/17/2006	US7122858 Nonvolatile semiconductor memory device including improved gate electrode
10/17/2006	US7122857 Multi-level (4state/2-bit) stacked gate flash memory cell
10/17/2006	US7122856 Capacitor having a barrier layer made of a transition metal phosphide, arsenide or sulfide
10/17/2006	US7122854 Semiconductor memory device comprising magneto resistive element and its manufacturing method
10/17/2006	US7122852 Structure/method to fabricate a high performance magnetic tunneling junction MRAM
10/17/2006	US7122851 Semiconductor device with perovskite capacitor
10/17/2006	US7122850 Semiconductor device having local interconnection layer and etch stopper pattern for preventing leakage of current
10/17/2006	US7122849 Stressed semiconductor device structures having granular semiconductor material
10/17/2006	US7122846 Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)
10/17/2006	US7122842 Solid state white light emitter and display using same
10/17/2006	US7122841 Bonding pad for gallium nitride-based light-emitting devices
10/17/2006	US7122840 Image sensor with optical guard ring and fabrication method thereof
10/17/2006	US7122837 Structures formed in diamond
10/17/2006	US7122836 Electro-optical device and electronic apparatus
10/17/2006	US7122835 Electrooptical device and a method of manufacturing the same
10/17/2006	US7122833 Semiconductor integrated circuit and method of fabricating same
10/17/2006	US7122832 Electroluminescence display device with light shielding film
10/17/2006	US7122831 Method of forming a reflective electrode and a liquid crystal display device
10/17/2006	US7122830 Semiconductor device and method of manufacturing the same
10/17/2006	US7122828 Semiconductor devices having regions of induced high and low conductivity, and methods of making the same
10/17/2006	US7122827 Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same
10/17/2006	US7122826 Image display unit
10/17/2006	US7122825 Lighting system
10/17/2006	US7122813 Device for generating THz radiation
10/17/2006	US7122735 Quantum well energizing method and apparatus
10/17/2006	US7122489 Manufacturing method of composite sheet material using ultrafast laser pulses
10/17/2006	US7122488 High density plasma process for the formation of silicon dioxide on silicon carbide substrates
10/17/2006	US7122487 Method for forming an oxide with improved oxygen bonding
10/17/2006	US7122470 Semiconductor device with a CMOS transistor
10/17/2006	US7122469 Fabrication process of a semiconductor integrated circuit device
10/17/2006	US7122467 Method for fabricating semiconductor device
10/17/2006	US7122454 Method for improving nitrogen profile in plasma nitrided gate dielectric layers
10/17/2006	US7122452 Method of manufacturing a semiconductor on a silicon on insulator (SOI) substrate using solid epitaxial regrowth (SPER) and semiconductor device made thereby
10/17/2006	US7122451 Method for fabricating a semiconductor device including exposing a group III-V semiconductor to an ammonia plasma
10/17/2006	US7122450 Process for manufacturing a semiconductor device
10/17/2006	US7122449 Methods of fabricating semiconductor structures having epitaxially grown source and drain elements
10/17/2006	US7122448 Annealing apparatus, annealing method, and manufacturing method of a semiconductor device
10/17/2006	US7122445 Peeling method
10/17/2006	US7122444 Manufacturing method of thin film device substrate
10/17/2006	US7122437 Deep trench capacitor with buried plate electrode and isolation collar
10/17/2006	US7122433 Method for manufacturing trench gate semiconductor device
10/17/2006	US7122431 Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions
10/17/2006	US7122430 Nonvolatile semiconductor memory and manufacturing method for the same
10/17/2006	US7122429 Semiconductor memory and method of manufacturing the same
10/17/2006	US7122426 Method of fabricating cell of nonvolatile memory device with floating gate
10/17/2006	US7122423 Method for fabricating a memory cell
10/17/2006	US7122417 Methods for fabricating metal-oxide-semiconductor field effect transistors using gate sidewall spacers
10/17/2006	US7122416 Method for forming a filled trench in a semiconductor layer of a semiconductor substrate, and a semiconductor substrate with a semiconductor layer having a filled trench therein
10/17/2006	US7122415 Atomic layer deposition of interpoly oxides in a non-volatile memory device
10/17/2006	US7122414 Method to fabricate dual metal CMOS devices
10/17/2006	US7122413 Method to manufacture silicon quantum islands and single-electron devices
10/17/2006	US7122412 Method of fabricating a necked FINFET device
10/17/2006	US7122410 Polysilicon line having a metal silicide region enabling linewidth scaling including forming a second metal silicide region on the substrate
10/17/2006	US7122409 Semiconductor device and a method of manufacturing the same
10/17/2006	US7122408 Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation
10/17/2006	US7122403 Method of interconnecting die and substrate
10/17/2006	US7122396 Semiconductor acceleration sensor and process for manufacturing the same
10/17/2006	US7122394 Process for producing a semiconductor light-emitting device
10/17/2006	US7122392 Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby
10/17/2006	US7122391 Wafer-level test structure for edge-emitting semiconductor lasers
10/17/2006	US7122390 Methods of fabrication for flip-chip image sensor packages
10/17/2006	US7122280 Angular substrates
10/17/2006	US7122128 Phosphors containing borate of terbium, alkaline-earth, and Group-3 metals, and light sources incorporating the same
10/17/2006	US7122082 Silicon wafer and manufacturing method thereof
10/12/2006	WO2006108011A2 Trenched-gate field effect transistors and methods of forming the same
10/12/2006	WO2006107897A2 Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction
10/12/2006	WO2006107740A2 Living synthesis of conducting polymers including regioregular polymers, polythiophenes, and block copolymers
10/12/2006	WO2006107735A2 Method for making a semiconductor device including a superlattice with regions defining a semiconductor junction
10/12/2006	WO2006107733A1 Semiconductor device including a superlattice with regions defining a semiconductor junction

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