H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2006
11/02/2006	US20060244007 High-performance one-transistor memory cell
11/02/2006	US20060244006 Diode and method for manufacturing the same
11/02/2006	US20060244005 Lateral current blocking light-emitting diode and method for manufacturing the same
11/02/2006	US20060244004 Active semiconductor component with a reduced surface area
11/02/2006	US20060243981 Masked spacer etching for imagers
11/02/2006	US20060243980 Liquid crystal display panel and fabricating method thereof
11/02/2006	US20060243979 TFT array panel, liquid crystal display including same, and method of manufacturing TFT array panel
11/02/2006	US20060243978 Semiconductor device and method of manufacturing the same
11/02/2006	US20060243977 Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus
11/02/2006	US20060243976 Organic light emitting display device and method of fabricating the same
11/02/2006	US20060243975 Thin film transistor substrate, method of manufacturing the same and display apparatus having the same
11/02/2006	US20060243974 Thin-film transistor
11/02/2006	US20060243973 Thin film diode integrated with chalcogenide memory cell
11/02/2006	US20060243972 Structure of polymer-matrix conductive film and method for fabricating the same
11/02/2006	US20060243971 Organic transistor
11/02/2006	US20060243970 Light Emitting Device
11/02/2006	US20060243969 Electrical detection of selected species
11/02/2006	US20060243968 Organic electroluminescent device for preventing long distance short
11/02/2006	US20060243967 Light emitting element and light emitting device and method of manufacturing light emitting element
11/02/2006	US20060243965 Electronic device
11/02/2006	US20060243964 Method for making a semiconductor device having a semiconductor-on-insulator configuration and a superlattice
11/02/2006	US20060243963 Semiconductor device including a floating gate memory cell with a superlattice channel
11/02/2006	US20060243962 Quantum dot resonant tunneling device
11/02/2006	US20060243960 Compound semiconductor and method for producing same
11/02/2006	US20060243958 Microelectronic package interconnect and method of fabrication thereof
11/02/2006	US20060243957 Binary signal converters for distinguishing direct signals carried by nanowires
11/02/2006	EP1717865A2 Methods of making a power MOS transistor and power MOS transistor
11/02/2006	EP1717864A1 Method for managing the stress configuration in the channel of a MOS transistor, and corresponding integrated circuit.
11/02/2006	EP1717863A2 Semiconductor power device with passivation layers
11/02/2006	EP1717861A1 Vertical MOSFET transistor, in particular operating as a selector in nonvolatile memory devices
11/02/2006	EP1717859A2 Electro-optical device and electronic device
11/02/2006	EP1717853A2 TFT matrix panel
11/02/2006	EP1717850A1 Method of manufacturing a lateral power MOS transistor
11/02/2006	EP1717849A1 Process for manufacturing a MOS device with intercell ion implant
11/02/2006	EP1717847A2 Semiconductor device and method for manufacturing the same
11/02/2006	EP1717196A1 Technique for manufacturing silicon structures
11/02/2006	EP1717195A1 Trilayered beam MEMS device and related methods
11/02/2006	EP1717194A1 Trilayered Beam MEMS device and related methods
11/02/2006	EP1717193A1 Trilayered beam MEMS device and related methods
11/02/2006	EP1716601A1 Organic thin film transistor
11/02/2006	EP1716600A1 Bipolar reading technique for a memory cell having an electrically floating body transistor
11/02/2006	EP1716599A2 Trench-gate semiconductor devices and the manufacture thereof
11/02/2006	EP1716598A1 Method of fabricating a sige semiconductor structure
11/02/2006	EP1716591A2 Buried guard ring and radiation hardened isolation structures and fabrication methods
11/02/2006	EP1716072A2 Integrated getter area for wafer level encapsulated microelectromechanical systems
11/02/2006	EP1474826B1 Polysilicon bipolar transistor and method for producing the same
11/02/2006	EP0890187B1 A method for producing a semiconductor device by the use of an implanting step
11/02/2006	DE4418352B4 Halbleiterbauelement mit einer Siliziumsäulen-Transistorstruktur mit ringförmig umgebendem Gate sowie Verfahren zu dessen Herstellung A semiconductor device comprising a silicon pillar having annularly surrounding gate transistor structure and process for its preparation
11/02/2006	DE112004002307T5 Transistor mit Silizium- und Kohlenstoffschicht in dem Kanalbereich Transistor with silicon and carbon layer in the channel region
11/02/2006	DE112004002155T5 Verfahren zum Integrieren eines Gatedielektrikums mit großem ε in einem Transistorherstellungsprozess A method for integrating a gate dielectric in a transistor with large ε manufacturing process
11/02/2006	DE10337757B4 Halbleiterwafer mit asymmetrischem Kantenprofil und Herstellungsverfahren hierfür A semiconductor wafer with an asymmetric edge profile and manufacturing method thereof
11/02/2006	DE10337562B4 Herstellungsverfahren für einen Grabenkondensator mit einem Isolationskragen, der über einen vergrabenen Kontakt einseitig mit einem Substrat elektrisch verbunden ist, insbesondere für eine Halbleiterspeicherzelle Manufacturing method for a grave capacitor with an insulation collar, which is electrically connected through a buried contact on one side with a substrate, in particular for a semiconductor memory cell
11/02/2006	DE10250829B4 Nichtflüchtige Speicherzelle, Speicherzellen-Anordnung und Verfahren zum Herstellen einer nichtflüchtigen Speicherzelle A non-volatile memory cell, memory cell arrangement and method of manufacturing a non-volatile memory cell
11/02/2006	DE10241973B4 Verfahren zur Epitaxie auf Silizium und nach dem Verfahren hergestelltes Halbleiterbauelement A method for epitaxial growth on silicon and the procedure semiconductor component produced
11/02/2006	DE102005020016A1 Semiconductor chip, e.g. air flow sensor chip, assembling method, involves assembling chip mounting area on carrier surface area by flip-chip technology, and assembling profile device mounting area such that chip is embedded into device
11/02/2006	DE102005019860A1 Controllable semiconductor diode has series connection that comprises Schottky diode section and MOSFET section, and bridges pn transition and diode has one pn transition that can be switched between first state and second state
11/02/2006	DE102005019178A1 Reverse-conduction insulated gate bipolar transistor (IGBT) has semiconductor body that has cell region formed with n-type areas and p-type areas, in which portions between n-type and p-type areas are formed with different minimum distances
11/02/2006	DE102005018984A1 Verfahren und Vorrichtung zum Herstellen von elektronischen Bauteilen Method and apparatus for the manufacture of electronic components
11/02/2006	DE102005018941A1 Power semiconductor device, e.g. power transistor or power integrated circuit (IC), has standard housing provided with external connectors which are arranged and electrically connected to flat leads outside of or within standard housing
11/02/2006	DE102005004708B4 Verfahren zur Herstellung integrierter Schaltkreise mit mindestens einem Silizium-Germanium-Heterobipolartransistor A process for the production of integrated circuits having at least one silicon-germanium heterobipolar
11/02/2006	DE10125800B4 Speicherbaustein mit einer Speicherzelle und Verfahren zur Herstellung eines Speicherbausteins Memory device having a memory cell and method for manufacturing a memory device
11/02/2006	DE10106606B4 Modifizierte Floating Gate Transistor Struktur mit negativem differentiellen Widerstand Modified floating gate transistor structure with negative differential resistance
11/01/2006	CN2833893Y Ceramic sealed diode
11/01/2006	CN1856936A Strained-silicon voltage controlled oscillator (vco)
11/01/2006	CN1856880A Dynamic control of capacitance elements in field effect semiconductor devices
11/01/2006	CN1856872A Adjustable self-aligned air gap dielectric for low capacitance wiring
11/01/2006	CN1856867A Method for the elimination of the effects of defects on wafers
11/01/2006	CN1856865A Memory cell and method for producing a memory
11/01/2006	CN1856860A Embedded waveguide detectors
11/01/2006	CN1856841A Nonvolatile semiconductor memory device having protection function for each memory block
11/01/2006	CN1855551A Semiconductor device and method for manufacturing same
11/01/2006	CN1855550A Semiconductor device
11/01/2006	CN1855549A Semiconductor device
11/01/2006	CN1855548A Semiconductor memory device and method of manufacturing the same
11/01/2006	CN1855547A Semiconductor device and manufacture thereof
11/01/2006	CN1855546A Semiconductor device
11/01/2006	CN1855545A Mos transistor, coms integrated circuit device including same, and related methods of manufacture
11/01/2006	CN1855544A Semicondcutor with mask electrode and method
11/01/2006	CN1855543A Power semiconductor device having improved performance and method
11/01/2006	CN1855542A Quasi-plannar and finfet-like transistors on bulk silicon and manufacturing method thereof
11/01/2006	CN1855541A Field effect transistor with gate spacer structure and low-resistance channel coupling
11/01/2006	CN1855540A Semiconductor component and method for manufacturing same
11/01/2006	CN1855539A Transistor structure of memory and manufacturing method thereof
11/01/2006	CN1855538A MOSFET with isolative struclure for monolithic IC and its manufacture
11/01/2006	CN1855537A Metal oxide semiconductor field-effect transistor with isolating structure and its production
11/01/2006	CN1855536A Semiconductor device and method for manufacturing the same
11/01/2006	CN1855535A Step-embedded sige structure for pfet mobility enhancement
11/01/2006	CN1855534A Duck semiconductor device
11/01/2006	CN1855533A Heterojunction bipolar transistor and method for fabricating the same
11/01/2006	CN1855532A Lateral bipolar transistor with additional ESD implant
11/01/2006	CN1855531A Conduction control device
11/01/2006	CN1855530A 半导体装置 Semiconductor device
11/01/2006	CN1855529A Semiconductor device having field stabilization film and method
11/01/2006	CN1855528A Polysilicon-insulating layer-polysilicon capacitance, high-capacitant polysilicon device and its production
11/01/2006	CN1855515A Semiconductor device and a method of manufacturing the same
11/01/2006	CN1855513A Semiconductor storage device and method for manufacturing same
11/01/2006	CN1855510A Integrated circuit memory and method of operating same
11/01/2006	CN1855508A Non-volatile memory, its production and operation
11/01/2006	CN1855507A Non-volatile memory, its production and operation
11/01/2006	CN1855505A Non-volatile memory and its production

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