| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/21/2006 | US20060208319 Semiconductor memory device and method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device |
| 09/21/2006 | US20060208318 MOS field effect semiconductor device and method for fabricating the same |
| 09/21/2006 | US20060208317 Layout structure of semiconductor cells |
| 09/21/2006 | US20060208316 High performance tunneling-biased MOSFET and a process for its manufacture |
| 09/21/2006 | US20060208315 Semiconductor element and semiconductor memory device using the same |
| 09/21/2006 | US20060208314 Semiconductor device and manufacturing method for semiconductor device |
| 09/21/2006 | US20060208313 Double gate FET and fabrication process |
| 09/21/2006 | US20060208312 Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card |
| 09/21/2006 | US20060208311 Quantum circuit and quantum computer |
| 09/21/2006 | US20060208310 Method and apparatus for a flash memory device comprising a source local interconnect |
| 09/21/2006 | US20060208309 Non-planar flash memory having shielding between floating gates |
| 09/21/2006 | US20060208308 Use of selective epitaxial silicon growth in formation of floating gates |
| 09/21/2006 | US20060208307 Split gate flash memory and manufacturing method thereof |
| 09/21/2006 | US20060208306 Single-poly eeprom |
| 09/21/2006 | US20060208305 In-service reconfigurable DRAM and flash memory device |
| 09/21/2006 | US20060208304 Three-dimensional memory devices |
| 09/21/2006 | US20060208303 Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same |
| 09/21/2006 | US20060208302 Non-volatile memory device having charge trap layer and method of fabricating the same |
| 09/21/2006 | US20060208301 Semiconductor memory device and method of driving a semiconductor memory device |
| 09/21/2006 | US20060208300 Finfet-type semiconductor device and method for fabricating the same |
| 09/21/2006 | US20060208299 Semiconductor device having stacked decoupling capacitors |
| 09/21/2006 | US20060208298 Memory cell of dynamic random access memory and array structure thereof |
| 09/21/2006 | US20060208297 Polymer memory having a ferroelectric polymer memory material with cell sizes that are asymmetric |
| 09/21/2006 | US20060208296 Novel structure and method to fabricate high performance MTJ devices for MRAM applications |
| 09/21/2006 | US20060208295 Ferroelectric memory device |
| 09/21/2006 | US20060208287 Lateral Programmable Polysilicon Structure Incorporating Polysilicon Blocking Diode |
| 09/21/2006 | US20060208286 Method for manufacturing semiconductor device and semiconductor device |
| 09/21/2006 | US20060208285 Image sensor with embedded photodiode region and fabrication method thereof |
| 09/21/2006 | US20060208280 Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions |
| 09/21/2006 | US20060208279 Multi-layer structure for use in the fabrication of integrated circuit devices and methods for fabrication of same |
| 09/21/2006 | US20060208277 Bipolar transistor with a low saturation voltage |
| 09/21/2006 | US20060208276 Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device |
| 09/21/2006 | US20060208275 Transflective liquid crystal display panel and manufacturing method thereof |
| 09/21/2006 | US20060208271 Light source apparatus and fabrication method thereof |
| 09/21/2006 | US20060208270 Borate phosphor materials for use in lighting applications |
| 09/21/2006 | US20060208267 Side-emitting solid-state semiconductor light emitting device |
| 09/21/2006 | US20060208264 Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof |
| 09/21/2006 | US20060208261 Semiconductor device and manufacturing method thereof |
| 09/21/2006 | US20060208260 Powdered fluorescent material and method for manufacturing the same, light-emitting device, and illumination apparatus |
| 09/21/2006 | US20060208259 CMOS image sensors and methods for fabricating the same |
| 09/21/2006 | US20060208258 Semiconductor device, and method of fabricating the same |
| 09/21/2006 | US20060208257 Method for low-temperature, hetero-epitaxial growth of thin film cSi on amorphous and multi-crystalline substrates and c-Si devices on amorphous, multi-crystalline, and crystalline substrates |
| 09/21/2006 | US20060208255 Stressed organic semiconductor |
| 09/21/2006 | US20060208254 Techniques and systems for analyte detection |
| 09/21/2006 | US20060208253 Organic thin film transistor, flat display device including the same, and method of manufacturing the organic thin film transistor |
| 09/21/2006 | US20060208252 Molecular rectifiers |
| 09/21/2006 | US20060208251 Organic semiconductor device and producing method therefor |
| 09/21/2006 | US20060208250 Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility |
| 09/21/2006 | US20060208215 Method for hafnium nitride deposition |
| 09/21/2006 | US20060207972 Method for realizing microchannels in an integrated structure |
| 09/21/2006 | DE112004002033T5 Verfahren zur Herstellung eines Verbindungshalbleitersubstrats A process for preparing a compound semiconductor substrate |
| 09/21/2006 | DE112004002022T5 Messsonden-Prüfstruktur Measuring probe test structure |
| 09/21/2006 | DE102005012217A1 Lateral MISFET has semiconductor body of doped semiconductor substrate of first conductivity type and on semiconductor substrate epitaxial layer is provided to first conductivity type complementing second conductivity type |
| 09/21/2006 | DE102005011873A1 Ion recombination zone producing method for e.g. silicon wafer, involves accomplishing diffusion processes to store heavy metal in space agglomerate, and producing zone of increased ion recombination in body zone of power transistor |
| 09/21/2006 | DE102005011159A1 Semiconductor component has surface mountable external contacts, which has external contact surface on lower surface of housing of semiconductor components whereby drain contact surface is provided at rear surface of semiconductor chip |
| 09/21/2006 | CA2602365A1 Low-dielectric constant cryptocrystal layers and nanostructures |
| 09/21/2006 | CA2564423A1 Group iii nitride semiconductor device and epitaxial substrate |
| 09/20/2006 | EP1703568A2 Display device |
| 09/20/2006 | EP1703567A2 Insulated gate field-effect transistor and method of making the same |
| 09/20/2006 | EP1703566A1 MOS device having at least two channel regions |
| 09/20/2006 | EP1703565A1 Bipolar transistor, semiconductor device comprising the bipolar transistor and process for fabricating them |
| 09/20/2006 | EP1703561A2 Protection device for handling energy transients |
| 09/20/2006 | EP1702371A1 Method for the production a nanoelement field effect transistor, nanoelement-field effect transistor and surrounded gate structure |
| 09/20/2006 | EP1702367A2 Transistor having three electronically isolated electrodes and method of formation |
| 09/20/2006 | EP1702366A1 Small-surfaced active semiconductor component |
| 09/20/2006 | EP1702365A2 Enhancement of electron and hole mobilities in 110 under biaxial compressive strain |
| 09/20/2006 | EP1702362A1 Monolithically integrated circuit for radio frequency applications |
| 09/20/2006 | EP1702358A2 A method for forming thick dielectric regions using etched trenches |
| 09/20/2006 | EP1702356A2 A method of varying etch selectivities of a film |
| 09/20/2006 | EP1702354A2 Single-crystal semiconductor layer with heteroaromatic macro-network |
| 09/20/2006 | EP1702350A2 Planar substrate with selected semiconductor crystal orientations formed by localized amorphzation and recrystallization of stacked template layers |
| 09/20/2006 | EP1702349A2 Method of manufacturing a semiconductor component, and semiconductor component formed thereby |
| 09/20/2006 | EP1701686A2 Method of manufacturing a superjunction device with conventional terminations |
| 09/20/2006 | EP1442487B1 Organic thin film transistor with siloxane polymer interface |
| 09/20/2006 | EP1181401B1 Semi-insulating silicon carbide without vanadium domination |
| 09/20/2006 | CN2819480Y Semiconductor non-volatile memory of self-aligning quantum-point reinforced FN tunnel |
| 09/20/2006 | CN1836337A Fast switching power insulated gate semiconductor device |
| 09/20/2006 | CN1836336A Mirror image non-volatile memory cell transistor pairs with single poly layer |
| 09/20/2006 | CN1836335A Electric power transforming apparatus |
| 09/20/2006 | CN1836334A Full spectrum phosphor blends for white light generation with LED chips |
| 09/20/2006 | CN1836333A Linear device |
| 09/20/2006 | CN1836321A High ft and fmax bipolar transistor and method of making same |
| 09/20/2006 | CN1836318A Thin germanium oxynitride gate dielectric for germanium-based devices |
| 09/20/2006 | CN1836313A Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same |
| 09/20/2006 | CN1835249A Semiconductor device and method of manufacturing the same |
| 09/20/2006 | CN1835248A Silicon-on-nothing metal-oxide-semiconductor field-effect-transistor and method for manufacturing the same |
| 09/20/2006 | CN1835247A Voltage controlled bidirectional switch |
| 09/20/2006 | CN1835244A Active pioxel sensor |
| 09/20/2006 | CN1835238A Semiconductor device with gate insulating film and manufacturing method thereof |
| 09/20/2006 | CN1835194A Method for manufacturing semiconductor device and semiconductor device |
| 09/20/2006 | CN1835188A Micro movable device and method of making the same using wet etching |
| 09/20/2006 | CN1834759A 液晶显示装置 The liquid crystal display device |
| 09/20/2006 | CN1834745A Liquid crystal display device and method of manufacturing the same |
| 09/20/2006 | CN1834740A Liquid crystal display device and manufacturing method of the same |
| 09/20/2006 | CN1834738A LCD panel and its detection method |
| 09/20/2006 | CN1834123A Thin film transistor and flat display device employing the thin film transistor |
| 09/20/2006 | CN1276518C Floating gate memory device using composite molecular material |
| 09/20/2006 | CN1276517C Semiconductor device |
| 09/20/2006 | CN1276516C Field effect transistor and devices using same |
| 09/20/2006 | CN1276515C Semiconductor device and producing method thereof |