Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2006
10/05/2006US20060220099 Semiconductor device
10/05/2006US20060220098 Nonvolatile memory devices and methods of making the same
10/05/2006US20060220097 Semiconductor device and method for fabricating the same
10/05/2006US20060220096 Tunneling-enhanced floating gate semiconductor device
10/05/2006US20060220095 Non-volatile memory having three states and method for manufacturing the same
10/05/2006US20060220094 Non-volatile memory transistor with nanotube floating gate
10/05/2006US20060220093 Non-volatile memory cell and method of fabrication
10/05/2006US20060220092 Titanium oxide extended gate field effect transistor
10/05/2006US20060220091 Semiconductor device and method for fabricating the same
10/05/2006US20060220090 Semiconductor device with a high-k gate dielectric and a metal gate electrode
10/05/2006US20060220089 Memories having a charge storage node at least partially located in a trench in a semiconductor substrate and electrically coupled to a source/drain region formed in the substrate
10/05/2006US20060220088 Semiconductor device and method of manufacturing the same
10/05/2006US20060220087 Method of forming a contact structure including a vertical barrier structure and two barrier layers
10/05/2006US20060220086 IMOS transistor
10/05/2006US20060220085 Single transistor floating body DRAM cell having recess channel transistor structure and method of fabricating the same
10/05/2006US20060220084 Magnetoresistive effect element and method for fabricating the same
10/05/2006US20060220083 Semiconductor device
10/05/2006US20060220082 Semiconductor device and manufacturing method of the same
10/05/2006US20060220081 Semiconductor device and manufacturing method of the same
10/05/2006US20060220080 Polymer memory and method of its fabrication
10/05/2006US20060220075 Methods of fabricating self-aligned source of flash memory device
10/05/2006US20060220074 Carbon nanotube energy well (cnew) field effect transistor
10/05/2006US20060220073 Solid-state image pickup element and method of producing the same
10/05/2006US20060220072 Vertical junction field effect transistor having an epitaxial gate
10/05/2006US20060220071 Phase-change semiconductor memory device and method of programming the same
10/05/2006US20060220070 Imaging system and driving method
10/05/2006US20060220069 Isolation structures for preventing photons and carriers from reaching active areas and methods of formation
10/05/2006US20060220067 Nanoscopic wire-based devices and arrays
10/05/2006US20060220066 Semiconductor device having a dummy gate
10/05/2006US20060220063 Semiconductor device having GaN-based semiconductor layer
10/05/2006US20060220062 pHEMT with barrier optimized for low temperature operation
10/05/2006US20060220059 Solar cell
10/05/2006US20060220058 Multiple tunnel junction thermotunnel device on the basis of ballistic electrons
10/05/2006US20060220055 Light emitting diode systems
10/05/2006US20060220054 Super light full space emitting diode buled
10/05/2006US20060220042 Semiconductor device and fabrication method of the same
10/05/2006US20060220041 Solid state device with current spreading segments
10/05/2006US20060220039 Semiconductor device, method of manufacturing the same, and substrate for manufacturing the same
10/05/2006US20060220026 Semiconductor element
10/05/2006US20060220025 Image sensor and method of manufacturing the same
10/05/2006US20060220024 Liquid crystal display device and display device
10/05/2006US20060220023 Thin-film device
10/05/2006US20060220022 Semiconductor device, electronic apparatus, method of manufacturing semiconductor device, and method of manufacturing electronic apparatus
10/05/2006US20060220021 Method of manufacturing a semiconductor device
10/05/2006US20060220020 Thin film transistor, flat panel display device, and method of fabricating the same
10/05/2006US20060220019 Liquid crystal display
10/05/2006US20060220018 Array substrate for in-plane switching liquid crystal display device and method of fabricating the same
10/05/2006US20060220017 Semiconductor device and method of manufacturing the same
10/05/2006US20060220016 Light emitting display and method of manufacturing the same
10/05/2006US20060220015 Thin film transistor, thin film transistor display panel, and manufacturing method thereof
10/05/2006US20060220014 Liquid crystal display device and manufacturing method therefor
10/05/2006US20060220013 Techniques for facilitating identification updates in an integrated circuit
10/05/2006US20060220011 Organic electroluminescent device
10/05/2006US20060220010 Organic light emitting diode display
10/05/2006US20060220009 Tft having a fluorocarbon-containing layer
10/05/2006US20060220008 Method of fabricating electroluminescent display
10/05/2006US20060220007 Acene compounds having a single terminal fused thiophene as semiconductor materials for thin film transistors and methods of making the same
10/05/2006US20060220006 Molecular-doped transistor and sensor
10/05/2006US20060220005 Logic gate with a potential-free gate electrode for organic integrated circuits
10/05/2006US20060220004 with Tris(2-bromo-6-pyridyl)phosphine oxide ligands; organic light-emitting diodes, integrated circuits, organic field-effect transistors, thin-film transistors, organic solar cells, and/or laser diodes
10/05/2006US20060220003 Semiconductor device
10/05/2006US20060219999 Group III-nitride light emitting device
10/05/2006US20060219998 Gallium nitride-based compound semiconductor multilayer structure and production method thereof
10/05/2006US20060219997 Semiconductor device and fabrication method of the same
10/05/2006US20060219996 Optical semiconductor device and fabrication method thereof
10/05/2006US20060219995 Electron emission device and electron emission display device using the same
10/05/2006US20060219994 Structure for amorphous carbon based non-volatile memory
10/05/2006US20060219267 System, method and apparatus for self-cleaning dry etch
10/05/2006DE4447149B4 Vollständig eingeebneter Feldeffekttransistor und Verfahren an dessen Herstellung Fully leveled field effect transistor and method of its manufacture
10/05/2006DE19929926B4 Verfahren zur Herstellung eines Speichers mit Mehrpegel-Quantenpunktstruktur A process for preparing a memory having multi-level quantum dot structure
10/05/2006DE19610907B4 Ferroelektrisches Halbleiterspeicherbauelement und Verfahren zu seiner Herstellung A ferroelectric semiconductor memory device and method for its preparation
10/05/2006DE112004002409T5 Verfahren zum Verbessern der Transistorleistung durch Reduzieren des Salizidgrenzflächenwiderstandes A method for improving transistor performance by reducing the Salizidgrenzflächenwiderstandes
10/05/2006DE10352068B4 Ausbilden von Siliziumnitridinseln für eine erhöhte Kapazität Forming Siliziumnitridinseln for increased capacity
10/05/2006DE10215365B4 Transistorstruktur unter Verwendung von Epitaxialschichten und Verfahren zur Herstellung derselben Transistor structure using epitaxial layers and methods of making the same
10/05/2006DE102006012416A1 Field effect transistor fabrication involves etching and annealing nano-wire channel region extended between source and drain regions
10/05/2006DE102006009961A1 Reverse-blocking semiconductor device manufacture for e.g. actuator, involves activating substrates by laser irradiation, where side wall of trench is formed with angle of inclination of seventy degree
10/05/2006DE102005014743A1 Metal oxide semiconductor transistor device for semiconductor switching arrangement, has mesa area with width that is average values of area widths in height of p-n junction and specified depth of structure and having body area contact hole
10/05/2006DE102005013982A1 Verfahren zur Herstellung eines Bipolartransistors und nach einem derartigen Verfahren hergestellter Bipolartransistor A method of manufacturing a bipolar transistor and manufactured by such a method bipolar transistor
10/05/2006DE102005012661A1 Semiconductor device e.g. fully depleted silicon-on-insulator FET, has electrically conductive gate adjoined to channel and placed in electrically conductive connection with gate contact area in contact position
10/05/2006DE102005012117A1 FET used in switching operation with high voltage application, has semiconductor body comprising of p-type transistor zones, connection electrodes, gate electrode with isolation layer, and n-type transistor zone
10/05/2006DE102005011967A1 Semiconductor component has drift distance that maintains maximum voltage as concentration of dopant increases
10/05/2006CA2602924A1 Electronic synapse device
10/04/2006EP1708277A1 Semiconductor device and manufacturing method thereof
10/04/2006EP1708276A1 Vertical gate semiconductor device and process for fabricating the same
10/04/2006EP1708275A2 Semiconductor device and fabrication method of the same
10/04/2006EP1708274A2 Lateral bipolar transistor with additional ESD implant
10/04/2006EP1708273A2 Semiconductor device and fabrication process thereof
10/04/2006EP1708271A1 CCD device with charge multiplication register
10/04/2006EP1708270A2 Solid-state imaging device and manufacture thereof
10/04/2006EP1708265A2 MOS capacitor with reduced capacitance
10/04/2006EP1708259A2 Semiconductor device having GaN-based semiconductor layer
10/04/2006EP1706906A1 Semi-conductor circuit and suitable production method therefor
10/04/2006EP1706905A1 Discriminative soi with oxide holes underneath dc source/drain
10/04/2006EP1706904A2 Multi-terminal devices having logic functionality
10/04/2006EP1706903A1 Isotopically pure silicon-on-insulator wafers and method of making same
10/04/2006EP1706900A2 A method for manufacturing a superjunction device with wide mesas
10/04/2006EP1706899A2 Planarization method of manufacturing a superjunction device
10/04/2006EP1706897A2 Method of treating microelectronic substrates
10/04/2006EP1706895A2 Silicon carbide on diamond substrates and related devices and methods
10/04/2006EP1303873B1 Thin film transistors and their manufacture