Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2006
10/12/2006WO2006107705A1 Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction
10/12/2006WO2006107564A2 Semiconductor power deviceand corrisponding manufacturing process
10/12/2006WO2006107413A2 Interlayer dielectric under stress for an integrated circuit
10/12/2006WO2006107398A1 Non-volatile memory transistor with nanotube floating gate
10/12/2006WO2006107384A1 Antifuse element and electrically redundant antifuse array for controlled rupture location
10/12/2006WO2006107383A2 Transitional dielectric layer to improve reliability and performance of high dielectric constant transistors
10/12/2006WO2006106826A1 Organic el display, organic transistor, and methods for manufacturing those
10/12/2006WO2006106743A1 Organic thin-film transistor and semiconductor device using same
10/12/2006WO2006106739A1 Semiconductor acceleration sensor
10/12/2006WO2006106667A1 Method for forming insulating film and method for manufacturing semiconductor device
10/12/2006WO2006106572A1 Semiconductor device
10/12/2006WO2006106570A1 Semiconductor device
10/12/2006WO2006083587A3 Monolithic integrated circuit having enhanced breakdown voltage
10/12/2006WO2006060738A3 Iii-nitride material structures including silicon substrates
10/12/2006WO2006050283A3 Resonant tunneling device using metal oxide semiconductor processing
10/12/2006WO2006031247A3 Method of creating defect free high ge content (25%) sige-on-insulator (sgoi) substrates using wafer bonding techniques
10/12/2006WO2006020158A3 Planarizing a semiconductor structure to form replacement metal gates
10/12/2006WO2005119784A3 Method for enhancing field oxide and integrated circuit with enhanced field oxide
10/12/2006WO2005117102A3 Low-voltage single-layer polysilicon eeprom memory cell
10/12/2006WO2005076365A9 Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
10/12/2006WO2005065140A3 Method of manufacturing a superjunction device with conventional terminations
10/12/2006US20060229694 Substrate sensor
10/12/2006US20060228899 Semiconductor memory device and method for manufacturing semiconductor device
10/12/2006US20060228893 Semiconductor substrates and field effect transistor constructions
10/12/2006US20060228876 Method of manufacturing a semiconductor device
10/12/2006US20060228875 Transistor with shallow germanium implantation region in channel
10/12/2006US20060228840 Tri-gate devices and methods of fabrication
10/12/2006US20060228837 Apparatus and method for laser radiation
10/12/2006US20060228821 Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same
10/12/2006US20060228723 System and method for electronic sensing of biomolecules
10/12/2006US20060228584 used for coating epitaxial films in the fabrication of electronic and opto-electronic devices such as laser diodes, light emitting diodes, transistors and detectors
10/12/2006US20060227620 Non-Volatile Memory Cells Utilizing Substrate Trenches
10/12/2006US20060227232 Image sensor and image sensor integrated type active matrix type display device
10/12/2006US20060226551 Integrated circuit device and method of producing the same
10/12/2006US20060226550 Molybdenum-based electrode with carbon nanotube growth
10/12/2006US20060226546 Alloy material for semiconductors, semiconductor chip using the alloy material and production method of the same
10/12/2006US20060226512 Integrated circuit comprising a substrate and a resistor
10/12/2006US20060226511 Miniature inductor suitable for integrated circuits
10/12/2006US20060226510 Integrated circuit transformer devices for on-chip millimeter-wave applications
10/12/2006US20060226509 Antifuse element and electrically redundant antifuse array for controlled rupture location
10/12/2006US20060226508 Semiconductor device having patterns for protecting fuses and method of fabricating the semiconductor device
10/12/2006US20060226507 Fuse structure having a tortuous metal fuse line
10/12/2006US20060226506 Trench isolation structure and method of formation
10/12/2006US20060226505 Nonvolatile memory devices and methods of fabricating the same
10/12/2006US20060226504 High-breakdown-voltage semiconductor device
10/12/2006US20060226503 Isolation trench geometry for image sensors
10/12/2006US20060226502 Microelectromechanical Systems (MEMS) Device Including a Superlattice
10/12/2006US20060226501 Collapsing zipper varactor with inter-digit actuation electrodes for tunable filters
10/12/2006US20060226500 Gate dielectric layer and method of forming the same
10/12/2006US20060226499 Semiconductor device incorporating protective diode with stable ESD protection capabilities
10/12/2006US20060226498 Power semiconductor device and method therefor
10/12/2006US20060226497 Vertical nanotransistor, method for producing the same and memory assembly
10/12/2006US20060226496 Concentric or nested container capacitor structure for integrated circuits
10/12/2006US20060226495 Structure and Method of Three Dimensional Hybrid Orientation Technology
10/12/2006US20060226494 Tungsten plug drain extension
10/12/2006US20060226493 High performance PFET header in hybrid orientation technology for leakage reduction in digital CMOS VLSI designs
10/12/2006US20060226492 Semiconductor device featuring an arched structure strained semiconductor layer
10/12/2006US20060226491 Inverted multilayer semiconductor device assembly
10/12/2006US20060226490 Interlayer dielectric under stress for an integrated circuit
10/12/2006US20060226489 System and methods for retention-enhanced programmable shared gate logic circuit
10/12/2006US20060226478 Semiconductor device having a lateral channel and contacts on opposing surfaces thereof
10/12/2006US20060226477 Substrate driven field-effect transistor
10/12/2006US20060226476 SiGe nickel barrier structure employed in a CMOS device to prevent excess diffusion of nickel used in the silicide material
10/12/2006US20060226475 Vertical field effect transistor
10/12/2006US20060226474 Structure and method of fabricating high-density, trench-based non-volatile random access sonos memory cells for soc applications
10/12/2006US20060226473 Gate electrode stack and use of a gate electrode stack
10/12/2006US20060226472 Cell region layout of semiconductor device and method of forming contact pad using the same
10/12/2006US20060226471 Flash memory cells with reduced distances between cell elements
10/12/2006US20060226470 Semiconductor device having metal gate patterns and related method of manufacture
10/12/2006US20060226469 Semiconductor device with integrated flash memory and peripheral circuit and its manufacture method
10/12/2006US20060226468 Split gate multi-bit memory cell
10/12/2006US20060226467 P-channel charge trapping memory device with sub-gate
10/12/2006US20060226466 Non-volatile semiconductor memory element and corresponding production and operation method
10/12/2006US20060226464 High voltage gain topology for analog circuits in short channel technologies
10/12/2006US20060226463 Merged MOS-bipolar capacitor memory cell
10/12/2006US20060226462 Semiconductor device having a compensation capacitor in a mesh structure
10/12/2006US20060226461 Semiconductor device and semiconductor device manufacturing method
10/12/2006US20060226460 High density integrated read-only memory (ROM) with reduced access time
10/12/2006US20060226459 Layout structure in semiconductor memory device and layout method therefor
10/12/2006US20060226458 Magnetic memory having synthetic antiferromagnetic pinned layer
10/12/2006US20060226457 Ferroelectric memory device and method of manufacture of same
10/12/2006US20060226455 Integrated circuit devices having buried insulation layers and methods of forming the same
10/12/2006US20060226454 Semiconductor device
10/12/2006US20060226453 Methods of forming stress enhanced PMOS structures
10/12/2006US20060226451 Power semiconductor device and method therefor
10/12/2006US20060226449 Semiconductor integrated circuit device with reduced leakage current
10/12/2006US20060226446 Bipolar transistor and method for fabricating the same
10/12/2006US20060226445 Silicon optoelectronic device, manufacturing method thereof, and image input and/or output apparatus using the same
10/12/2006US20060226444 Transistor device and method
10/12/2006US20060226439 Bi-directional transistor and method therefor
10/12/2006US20060226433 Strobe light control circuit and IGBT device
10/12/2006US20060226430 Electro-optical device and manufacturing method thereof
10/12/2006US20060226429 Method and apparatus for directional organic light emitting diodes
10/12/2006US20060226428 Vertical gate device for an image sensor and method of forming the same
10/12/2006US20060226427 Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus
10/12/2006US20060226426 Liquid crystal display device
10/12/2006US20060226425 Thin film transistor and method of fabricating the same
10/12/2006US20060226424 Thin film transistor and method of fabricating the same
10/12/2006US20060226423 Electro-optical device, manufacturing method thereof, and electronic apparatus
10/12/2006US20060226422 Electroluminescent device