Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2006
10/26/2006US20060237777 Multi-bit non-volatile memory device having a dual-gate and method of manufacturing the same, and method of multi-bit cell operation
10/26/2006US20060237776 High density stepped, non-planar flash memory
10/26/2006US20060237775 Memory device with high dielectric constant gate dielectrics and metal floating gates
10/26/2006US20060237774 Backgated finfet having different oxide thicknesses
10/26/2006US20060237773 Semiconductor device with reconfigurable logic
10/26/2006US20060237772 Method of manufacturing flash memory device
10/26/2006US20060237771 Flash memory device having a graded composition, high dielectric constant gate insulator
10/26/2006US20060237770 Semiconductor flash device
10/26/2006US20060237769 Floating gate isolation and method of making the same
10/26/2006US20060237768 Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
10/26/2006US20060237767 Semiconductor device with double barrier film
10/26/2006US20060237766 Semiconductor device using solid phase epitaxy and method for fabricating the same
10/26/2006US20060237765 EEPROM and method of manufacturing the same
10/26/2006US20060237764 LANTHANIDE DOPED TiOx DIELECTRIC FILMS
10/26/2006US20060237763 Electronic systems
10/26/2006US20060237762 Semiconductor device and method of manufacturing the semiconductor device
10/26/2006US20060237761 Non-volatile memory, fabrication method thereof and operation method thereof
10/26/2006US20060237759 Semiconductor device manufacturing method and semiconductor device
10/26/2006US20060237758 Semiconductor device
10/26/2006US20060237757 Semiconductor device and method for manufacturing the same
10/26/2006US20060237756 Phase change memory devices and their methods of fabrication
10/26/2006US20060237754 Semiconductor device and method of manufacturing the same
10/26/2006US20060237752 Schottky barrier MOSFET device and circuit
10/26/2006US20060237750 Field effect transistor structures
10/26/2006US20060237749 Nanoscopic wire-based devices and arrays
10/26/2006US20060237748 Semiconductor device and method of manufacturing the same
10/26/2006US20060237745 Super lattice modification of overlying transistor
10/26/2006US20060237743 Heterojunction bipolar transistor and method for fabricating the same
10/26/2006US20060237742 Power control center with solid state device for controlling power transmission
10/26/2006US20060237740 Mbe growth of an algan layer or algan multilayer structure
10/26/2006US20060237739 Light-emitting device and illuminator
10/26/2006US20060237738 LED lamps
10/26/2006US20060237728 Silicon carbide power devices with self-aligned source and well regions
10/26/2006US20060237727 Display Device and Semiconductor Device
10/26/2006US20060237726 Semiconductor device
10/26/2006US20060237725 Semiconductor devices having thin film transistors and methods of fabricating the same
10/26/2006US20060237724 Thin film transistor and method of forming the same
10/26/2006US20060237723 Semiconductor device and method of manufacturing the same
10/26/2006US20060237722 Solid state imaging device
10/26/2006US20060237721 Solid-state image pickup device, driving method for solid-state image pickup device, and image pickup apparatus
10/26/2006US20060237720 Active matrix substrate and liquid crystal display device, production methods thereof and electronic device
10/26/2006US20060237719 Electronic components
10/26/2006US20060237717 Organic polymers, electronic devices, and methods
10/26/2006US20060237716 Material and cell structure for storage applications
10/26/2006US20060237715 Organic metal compounds in which compounds for host and compounds for dopant are connected, organic electroluminesence display devices using the compounds and method for preparation of the devices
10/26/2006US20060237713 Color organic electroluminescent display and method for fabricating the same
10/26/2006US20060237712 N,N'-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
10/26/2006US20060237710 Semiconductor optical device
10/26/2006US20060237709 GaN-based compound semiconductor device
10/26/2006US20060237708 Semiconductor carbon nanotubes fabricated by hydrogen functionalization and method for fabricating the same
10/26/2006US20060237707 Memory array for increased bit density and method of forming the same
10/26/2006US20060237647 X-ray imaging device
10/26/2006US20060237517 Apparatus and manufacturing method of combining low melting point alloys and application of low melting point alloys
10/26/2006US20060237397 Method for manufacturing semiconductor device and laser irradiation apparatus
10/26/2006DE19749378B4 MOS-Transistor und Verfahren zu dessen Herstellung MOS transistor and method of producing the
10/26/2006DE19746920B4 Halbleitervorrichtung mit einer InGaP-Kanalschicht und einer Pufferschicht, sowie Verfahren zum Herstellen derselben A semiconductor device having a channel layer and an InGaP buffer layer, as well as methods for manufacturing the same
10/26/2006DE19681430B4 Verfahren zur Herstellung eines Halbleiterbauelements A process for producing a semiconductor device
10/26/2006DE10226664B4 Kompensations-Halbleiterbauelement Compensation semiconductor component
10/26/2006DE10220923B4 Verfahren zur Herstellung eines nicht-flüchtigen Flash-Halbleiterspeichers A process for producing a non-volatile flash semiconductor memory
10/26/2006DE102006017946A1 Siliziumkarbidhalbleitervorrichtung Silicon carbide semiconductor device
10/26/2006DE102006013413A1 Halbleitervorrichtung und Verfahren zur Temperaturerfassung unter Verwendung derselben A semiconductor device and method of temperature detection using the same
10/26/2006DE102005046133A1 Herstellungsverfahren für einen RCAT-Transistor und entsprechender RCAT-Transistor Manufacturing method for a RCAT transistor and corresponding RCAT transistor
10/26/2006DE102005013533A1 P-channel metal oxide field effect transistor for half bridge circuit arrangement, has rear side contact used as source connection, where source potential of transistor is at constant value for connecting source connection with heat sink
10/26/2006DE102004005384B4 Bidirektionales, MOS-gesteuertes Halbleiterbauelement, Verfahren zu seinem Betreiben, Verfahren zu seiner Herstellung und seine Verwendung Bi-directional MOS-controlled semiconductor device, method for its operation, process for its preparation and its use
10/26/2006DE10002129B4 Vertikale DMOS-Transistoranordnung mit niedrigem Einschaltwiderstand Vertical DMOS transistor structure with low on-resistance
10/26/2006DE10001869B4 In beiden Richtungen sperrendes steuerbares Halbleiterschaltelement In both directions blocking controllable semiconductor switching element
10/26/2006CA2529870A1 Light-emitting device, method for making the same, and nitride semiconductor substrate
10/25/2006EP1715531A1 Thin film transistor (TFT) and flat panel display including the TFT
10/25/2006EP1715530A1 Functional molecular element
10/25/2006EP1715527A2 Electrostatic discharge protection device
10/25/2006EP1715356A1 Spin detection device and methods for use thereof
10/25/2006EP1714359A2 110 oriented group iv-vi semiconductor structure, and method for making and using the same
10/25/2006EP1714330A1 Methods of fabricating vertical carbon nanotube field effect transistors for arrangement in arrays and field effect transistors and arrays formed thereby
10/25/2006EP1714326A1 Transistor including a deposited channel region having a doped portion
10/25/2006EP1714325A1 Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
10/25/2006EP1714324A2 High k dielectric film
10/25/2006EP1714323A1 Compound semiconductor device and method of producing the same
10/25/2006EP1714322A2 Integrated circuit arrangement with esd-resistant capacitor and corresponding method of production
10/25/2006EP1714314A2 Method for forming a memory structure using a modified surface topography and structure thereof
10/25/2006EP1714312A1 A semiconductor device, an electronic device and an electronic apparatus
10/25/2006EP1714310A1 Method for depositing a conductive carbon material on a semiconductor for forming a schottky contact and semiconductor contact device
10/25/2006EP1714294A1 Nonvolatile memory
10/25/2006EP1714292A1 Non-volatile memory cell using high-k material and inter-gate programming
10/25/2006EP1568069A4 Active matrix backplane for controlling controlled elements and method of manufacture thereof
10/25/2006EP1208604B1 Method for producing a semiconductor diode
10/25/2006EP1186885B1 Field-effect transistor
10/25/2006EP0860024A4 Circuit structure having a flip-mounted matrix of devices
10/25/2006CN2831441Y Surfaced plastic encapsulated high voltage diode
10/25/2006CN2831429Y Public electrode of crimped modular
10/25/2006CN2831178Y Substrate and LCD device using the same
10/25/2006CN1853278A Semiconductor device having ternary compound channel layer
10/25/2006CN1853277A Method for manufacturing field effect semiconductor device
10/25/2006CN1853270A Amorphous carbon layer to improve photoresist adhesion
10/25/2006CN1853267A Method for the manufacture of a non-volatile memory device and memory device thus obtained
10/25/2006CN1853261A Fabrication of single or multiple gate field plates
10/25/2006CN1853260A Semiconductor structure with different lattice constant materials and method for forming the same
10/25/2006CN1853259A Method of substrate processing and apparatus for substrate processing
10/25/2006CN1853258A Memory cell structure having nitride layer with reduced charge loss and method for fabricating same
10/25/2006CN1853241A Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance
10/25/2006CN1851932A Non-volatile storage device structure