Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2006
09/28/2006US20060216908 Silicon parts joined by a silicon layer preferably plasma sprayed
09/28/2006US20060216893 Manufacturing method of a flash memory cell
09/28/2006US20060216891 Non-volatile memory device and method of fabricating the same
09/28/2006US20060216886 SRAM devices having buried layer patterns and methods of forming the same
09/28/2006US20060216877 Image display and manufacturing method of the same
09/28/2006US20060216864 Stacked die in die BGA package
09/28/2006US20060216740 Methods for the electronic, homogeneous assembly and fabrication of devices
09/28/2006US20060216532 Methods and apparatus for devices having improved capacitance
09/28/2006US20060215722 Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device
09/28/2006US20060215721 Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device
09/28/2006US20060215458 Nonvolatile semiconductor memory
09/28/2006US20060215341 Electric power conversion device
09/28/2006US20060214694 Logic circuit, timing generation circuit, display device, and portable terminal
09/28/2006US20060214306 Semiconductor Chip and Method for Manufacturing the Same
09/28/2006US20060214268 SiC semiconductor device
09/28/2006US20060214266 Bevel dicing semiconductor components
09/28/2006US20060214265 Integrated circuit with capacitor and method for the production thereof
09/28/2006US20060214264 Differential variable capacitors and their applications
09/28/2006US20060214263 Multilayer electronic component and manufacturing method thereof
09/28/2006US20060214262 Capacitor with carbon nanotubes
09/28/2006US20060214261 Anti-fuse circuit for improving reliability and anti-fusing method using the same
09/28/2006US20060214260 Semiconductor device having fuse pattern and methods of fabricating the same
09/28/2006US20060214259 Hybrid chip fuse assembly having wire leads and fabrication method therefor
09/28/2006US20060214258 Semiconductor device and fabrication method of the same
09/28/2006US20060214257 Production method of strained silicon-SOI substrate and strained silicon-SOI substrate produced by same
09/28/2006US20060214256 Semiconductor device and a method of manufacturing the same
09/28/2006US20060214255 Semiconductor device and method of manufacturing the same
09/28/2006US20060214254 Semiconductor device and manufacturing method of the same
09/28/2006US20060214253 Integrated DC/DC converter substrate connections
09/28/2006US20060214248 Single crystal silicon sensor with additional layer and method of producing the same
09/28/2006US20060214247 Getter deposition for vacuum packaging
09/28/2006US20060214245 Semiconductor device and method of manufacturing the same
09/28/2006US20060214244 Semiconductor device and method for fabricating the same
09/28/2006US20060214243 Semiconductor device and method for fabricating the same
09/28/2006US20060214242 Termination for SiC trench devices
09/28/2006US20060214241 Semiconductor device and manufacturing method therefor
09/28/2006US20060214240 Semiconductor device
09/28/2006US20060214239 Transistor, method for manufacturing thereof, substrate for an electrooptical device
09/28/2006US20060214238 Multi-gate enhancement mode RF switch and bias arrangement
09/28/2006US20060214237 Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit
09/28/2006US20060214236 Semiconductor transistor and method for making the same
09/28/2006US20060214226 Method for forming an SOI structure with improved carrier mobility and ESD protection
09/28/2006US20060214225 High performance field effect transistors on SOI substrate with stress-inducing material as buried insulator and methods
09/28/2006US20060214224 Semiconductor device and process for producing the same
09/28/2006US20060214223 Semiconductor device, method for manufacturing the same, and gate electrode structure
09/28/2006US20060214222 Power semiconductor devices and methods of manufacture
09/28/2006US20060214221 Power semiconductor devices and methods of manufacture
09/28/2006US20060214220 Ballistic direct injection NROM cell on strained silicon structures
09/28/2006US20060214219 Non-volatile memory device for 2-bit operation and method of fabricating the same
09/28/2006US20060214218 Semiconductor device and method of fabricating the same
09/28/2006US20060214217 Nonvolatile semiconductor storage device and manufacturing method therefor
09/28/2006US20060214216 Non-volatile memory and method of manufacturing the same
09/28/2006US20060214215 Semiconductor device
09/28/2006US20060214214 Scalable spilt-gate flash memory cell with high source-coupling ratio
09/28/2006US20060214213 Thin-film capacitor element and semiconductor device
09/28/2006US20060214212 Semiconductor device and method of manufacturing semiconductor device
09/28/2006US20060214211 Semiconductor device and method for manufacturing the same
09/28/2006US20060214210 Semiconductor device
09/28/2006US20060214209 High density semiconductor memory and method of making
09/28/2006US20060214208 Method of manufacturing semiconductor device
09/28/2006US20060214207 Semiconductor device and manufacturing method thereof
09/28/2006US20060214206 Ferroelectric memory device and method of manufacturing the same
09/28/2006US20060214205 Thin-film capacitor element and semiconductor device
09/28/2006US20060214204 Ferroelectric structures and devices including upper/lower electrodes of different metals and methods of forming the same
09/28/2006US20060214198 Semiconductor device and manufacturing method thereof
09/28/2006US20060214197 Semiconductor device
09/28/2006US20060214196 Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
09/28/2006US20060214195 Solid-state imaging device
09/28/2006US20060214194 Charge coupled device having diverged channel
09/28/2006US20060214193 Field effect transistor
09/28/2006US20060214192 Field effect transistor, electrical device array and method for manufacturing those
09/28/2006US20060214188 Semiconductor device having GaN-based semiconductor layer
09/28/2006US20060214187 Wafer for semiconductor device fabrication, method of manufacture of same, and field effect transistor
09/28/2006US20060214185 Horizontal tram
09/28/2006US20060214184 Process for forming a planar diode using one mask
09/28/2006US20060214183 Variable breakdown characteristic diode
09/28/2006US20060214182 Ohmic electrode structure, compound semiconductor light emitting device having the same and led lamp
09/28/2006US20060214180 Semiconductor apparatus and method of assembling the same
09/28/2006US20060214174 Backlight apparatus and liquid crystal display apparatus
09/28/2006US20060214170 Versatile system for charge dissipation in the formation of semiconductor device structures
09/28/2006US20060214169 Active Matrix Display Backplane
09/28/2006US20060214168 Display device and manufacturing method thereof
09/28/2006US20060214167 Process for producing thin film transistor having LDD region
09/28/2006US20060214166 Photoelectric conversion layer stack type color solid-state image sensing device
09/28/2006US20060214165 Optimized circuits for three dimensional packaging and methods of manufacture therefore
09/28/2006US20060214163 Stressed organic semiconductor
09/28/2006US20060214162 Ambipolar organic thin-film field-effect transistor and making method
09/28/2006US20060214161 without using a gallium magnesium alloy; reacting gallium, magnesium, and at least one alkyl halide in an ether; use in metalorganic chemical vapor deposition, MOCVD in semiconductor manufacture such as of gallium nitride; enhanced yield
09/28/2006US20060214160 Semiconductor device and manufacturing method thereof
09/28/2006US20060214159 Organic semiconductor device, field-effect transistor, and their manufacturing methods
09/28/2006US20060214158 Nonlinear element, element substrate including the nonlinear element, and display device
09/28/2006US20060214157 Electroluminescence element
09/28/2006US20060214156 Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires
09/28/2006US20060214155 Compound with indolocarbazole moieties and devices containing such compound
09/28/2006US20060214154 Polymeric gate dielectrics for organic thin film transistors and methods of making the same
09/28/2006US20060214153 Epoxy resin molding material for sealing use and semiconductor device
09/28/2006US20060214152 Light emitting device
09/28/2006US20060214151 Light-emitting element and laser apparatus using the light-emitting element
09/28/2006DE19837893B4 Herstellungsverfahren für ein Halbleiterelement mit einem Wolframsilizid enthaltenden Gatestapel Manufacturing method of a semiconductor element with a tungsten silicide gate stack containing
09/28/2006DE10234601B4 Halbleiterbauelement mit SOI-Substrat und Herstellungsverfahren hierfür A semiconductor device comprising an SOI substrate and manufacturing method thereof