| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/04/2007 | US20070001212 NAND-type memory devices including recessed source/drain regions and related methods |
| 01/04/2007 | US20070001211 Flash Memory Device |
| 01/04/2007 | US20070001210 Non-volatile memory and operating method thereof |
| 01/04/2007 | US20070001209 Method of forming a storage electrode of a semiconductor device |
| 01/04/2007 | US20070001207 Double sided container capacitor for a semiconductor device and method for forming same |
| 01/04/2007 | US20070001206 Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen |
| 01/04/2007 | US20070001205 Semiconductor device, display device, and electronic appliance |
| 01/04/2007 | US20070001204 Capacitor with single crystal tantalum oxide layer and method for fabricating the same |
| 01/04/2007 | US20070001203 Semiconductor device including a vertical decoupling capacitor |
| 01/04/2007 | US20070001202 Structure having a dielectric layer sandwiched between two conductors for providing enhanced cracking resistance to the dielectric layer |
| 01/04/2007 | US20070001201 Capacitor with nano-composite dielectric layer and method for fabricating the same |
| 01/04/2007 | US20070001200 Semiconductor device and method of manufacturing the same |
| 01/04/2007 | US20070001199 Circuits and Integrated Circuits Including Field Effect Transistors Having Differing Body Effects |
| 01/04/2007 | US20070001198 Semiconductor device and method for forming the same |
| 01/04/2007 | US20070001197 Semiconductor device, semiconductor device design method, semiconductor device design method recording medium, and semiconductor device design support system |
| 01/04/2007 | US20070001195 Collector layer structure for a double hetero-junction bipolar transistor for power amplification applications |
| 01/04/2007 | US20070001194 Semiconductor device and method of manufacturing the same |
| 01/04/2007 | US20070001193 Schottky diode with minimal vertical current flow |
| 01/04/2007 | US20070001175 Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer |
| 01/04/2007 | US20070001174 Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
| 01/04/2007 | US20070001173 Semiconductor device structures and methods of forming semiconductor structures |
| 01/04/2007 | US20070001172 Liquid crystal display device and fabrication method thereof |
| 01/04/2007 | US20070001171 Semiconductor device and manufacturing method thereof |
| 01/04/2007 | US20070001170 Thin film transistor substrate and fabricating method thereof |
| 01/04/2007 | US20070001169 LCD device and method for fabricating the same |
| 01/04/2007 | US20070001167 Storage device and semiconductor device |
| 01/04/2007 | US20070000428 Laser irradiation apparatus |
| 01/04/2007 | DE4417289B4 Leistungsunabhängige, statische Speicher Independent power, static memory |
| 01/04/2007 | DE112004002633T5 Schmalkörper-Damaszener-Tri-Gate-FinFET mit gedünntem Körper Narrow-body damascene tri-gate FinFET with gedünntem body |
| 01/04/2007 | DE10345460B4 Verfahren zur Herstellung eines Lochgraben-Speicherkondensators in einem Halbleitersubstrat A method for producing a hole-trench storage capacitor in a semiconductor substrate, |
| 01/04/2007 | DE10235000B4 Verfahren zur Bildung einer Kanalzone eines Transistors und NMOS-Transistor A method of forming a channel region of a transistor and NMOS transistor |
| 01/04/2007 | DE102005047101B3 Semiconductor switch arrangement e.g. power semiconductor switch unit, for e.g. rectifier circuit, has insulated gate bipolar transistor with gate connections and load line between collector and emitter connections |
| 01/04/2007 | DE102005047001B3 High frequency switching component for use in high frequency circuit, has two transistors, where serial connection of transistors is charge-coupled with one another, so that base region and collector emitter current are switched on and off |
| 01/04/2007 | DE102005030875A1 Halbleiterprodukt und Verfahren zur Herstellung eines Halbleiterprodukts Semiconductor product and process for producing a semiconductor product |
| 01/04/2007 | DE102005028837A1 Feldeffekttransistor und Verfahren zur Herstellung eines Feldeffekttransistors Field effect transistor and method of manufacturing a field effect transistor |
| 01/04/2007 | DE102005026176B3 Verfahren zur flächigen Kontaktierung von Halbleiterbauelementen mit reduzierter Durchbiegung sowie entsprechendes Halbleiterbauelement und Herstellungsvorrichtung Method for planar bonding of semiconductor devices with reduced deflection and corresponding semiconductor device and manufacturing apparatus |
| 01/04/2007 | DE102005006121A1 Vertikalthyristor zum ESD-Schutz und Verfahren zur Herstellung eines Vertikalthyristor zum ESD-Schutz Vertikalthyristor for ESD protection and process for producing a Vertikalthyristor for ESD protection |
| 01/04/2007 | DE102004045768B4 Verfahren zur Herstellung eines Randabschlusses eines Halbleiterbauelements A process for the preparation of a edge termination of a semiconductor device |
| 01/04/2007 | DE102004013926B4 Trenchspeicherstruktur und Verfahren zum Ausbilden eines selbstjustierenden Buried-Strap-Kontakts unter Verwendung von dotiertem HDP-Oxid Trench memory structure and method for forming a self-aligned buried strap contact using doped HDP oxide |
| 01/04/2007 | CA2610870A1 Direct optical light guide |
| 01/04/2007 | CA2576960A1 Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same |
| 01/03/2007 | EP1739754A2 Semiconductor device and method for fabricating the same |
| 01/03/2007 | EP1739753A1 Process for producing schottky junction type semiconductor device |
| 01/03/2007 | EP1739749A2 Memory cell with an isolated-body MOS transistor with prolongated memory effect |
| 01/03/2007 | EP1739738A2 Memory cell with an isolated-body MOS transistor with reinforced memory effect |
| 01/03/2007 | EP1739726A1 Bipolar semiconductor device and process for producing the same |
| 01/03/2007 | EP1738416A2 Multifunctional doped conducting polymer-based field effect devices |
| 01/03/2007 | EP1738415A2 Pressure sensor device and method |
| 01/03/2007 | EP1738414A2 Dual-gate transistors |
| 01/03/2007 | EP1738411A1 Sensor device, sensor system and methods for manufacturing them |
| 01/03/2007 | EP1738410A1 Method for fabricating strained silicon-on-insulator structures and strained silicon-on -insulator structures formed thereby |
| 01/03/2007 | EP1738405A1 Field effect transistor and method of manufacturing a field effect transistor |
| 01/03/2007 | EP1738217A2 Flexible electrostatic actuator |
| 01/03/2007 | EP1652237A4 Backside thinning of image array devices |
| 01/03/2007 | EP1649501B1 High-k dielectric film, method of forming the same and related semiconductor device |
| 01/03/2007 | EP1543546A4 Isolated complementary mos devices in epi-less substrate |
| 01/03/2007 | EP1340270B1 Field effect transistors and materials and methods for their manufacture |
| 01/03/2007 | EP1314203B1 Trench mosfet with structure having low gate charge |
| 01/03/2007 | EP1149423B1 Method for printing of transistor arrays on plastic substrates |
| 01/03/2007 | EP1041611B1 Method of production of fine protuberance structure |
| 01/03/2007 | EP0862787B1 Lateral insulating method of a mos transistor active region |
| 01/03/2007 | CN1890816A Semiconductor device and production method therefor |
| 01/03/2007 | CN1890815A LDMOS transistor |
| 01/03/2007 | CN1890814A III-nitride device passivation and method |
| 01/03/2007 | CN1890813A Trench gate field effect devices |
| 01/03/2007 | CN1890799A Method and apparatus for forming an soi body-contacted transistor |
| 01/03/2007 | CN1890798A Method and apparatus for improving stability of a 6T CMOS sram cell |
| 01/03/2007 | CN1890788A Electronic appliance, and semiconductor apparatus and formation method therefor |
| 01/03/2007 | CN1890100A Method and apparatus for printing a patterned layer on a flatsubstrate with a flat-type-bed |
| 01/03/2007 | CN1889275A Heterojunction pn diode based on silicon nanoline and producing method thereof |
| 01/03/2007 | CN1889274A Silicon nano line homo pn junction diode and producing method thereof |
| 01/03/2007 | CN1889273A MOS transistor with partial depletion SOI structure and producing method thereof |
| 01/03/2007 | CN1889272A Display device panel structure and producing method thereof |
| 01/03/2007 | CN1888965A Transflective type liquid crystal display device and method of manufacturing the same |
| 01/03/2007 | CN1888964A LCD device |
| 01/03/2007 | CN1888961A Liquid crystal display device and fabrication method thereof |
| 01/03/2007 | CN1888958A 液晶显示器件及其制造方法 The liquid crystal display device and manufacturing method thereof |
| 01/03/2007 | CN1293784C Substrate for patterning thin film and surface treatment thereof |
| 01/03/2007 | CN1293647C Semiconductor device and manufacturing method thereof |
| 01/03/2007 | CN1293646C Structure for increasing fluidity of channel carrier |
| 01/03/2007 | CN1293645C Semiconductor device |
| 01/03/2007 | CN1293644C Semiconductor device |
| 01/03/2007 | CN1293641C 电子电路 Electronic circuit |
| 01/03/2007 | CN1293638C Semiconductor memory device and method for making said device by adopting mosaic bit line process |
| 01/03/2007 | CN1293636C Layout structure of multiplexer cells |
| 01/03/2007 | CN1293635C Chip incorporating partially-depleted, fully-depleted transistors and method for making same |
| 01/03/2007 | CN1293634C Semiconductor device and producing method thereof |
| 01/03/2007 | CN1293632C Film transistor array and its driving circuit structure |
| 01/03/2007 | CN1293631C Active matrix electroluminescent display devices, and their manufacture |
| 01/03/2007 | CN1293629C Electrostatic discharge protector and producing method |
| 01/03/2007 | CN1293617C Non-volatile memory with source side boron implantation |
| 01/03/2007 | CN1293616C Electric device structure and forming method, etching and method for depth measuring |
| 01/03/2007 | CN1293609C Film photoetching method |
| 01/03/2007 | CN1293607C Semiconducting film, semiconductor device and their production methods |
| 01/03/2007 | CN1293601C Laser device, laser radiation method and semiconductor device and its producing method |
| 01/03/2007 | CN1293523C Flat-plate display device with thin film transistor |
| 01/03/2007 | CN1293419C Plane display with gap wall support structure |
| 01/02/2007 | USRE39452 TFT substrate with low contact resistance and damage resistant terminals |
| 01/02/2007 | US7158419 Methods of fabricating flash memory devices including multiple dummy cell array regions |
| 01/02/2007 | US7158413 Semiconductor memory device with MOS transistors, each including a floating gate and a control gate, a control method thereof, and a memory card including the same |