Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2013
01/03/2013US20130001695 Uni-directional transient voltage suppressor (tvs)
01/03/2013US20130001694 Low capacitance transient voltage suppressor (tvs) with reduced clamping voltage
01/03/2013US20130001692 Semiconductor Devices Including a Layer of Polycrystalline Silicon Having a Smooth Morphology
01/03/2013US20130001691 Semiconductor structure and method for manufacturing the same
01/03/2013US20130001690 Mosfet and method for manufacturing the same
01/03/2013US20130001689 Textured gate for high current thin film transistors
01/03/2013US20130001684 Method of manufacturing trench mosfet using three masks process having tilt- angle source implants
01/03/2013US20130001683 Flexible crss adjustment in a sgt mosfet to smooth waveforms and to avoid emi in dc-dc application
01/03/2013US20130001682 Semiconductor structures including bodies of semiconductor material, devices including such structures and related methods
01/03/2013US20130001681 Mos-driven semiconductor device and method for manufacturing mos-driven semiconductor device
01/03/2013US20130001679 Semiconductor device and manufacturing method thereof
01/03/2013US20130001678 High breakdown voltage semiconductor device with an insulated gate formed in a trench, and manufacturing process thereof
01/03/2013US20130001677 Semiconductor device, method of manufacturing the semiconductor device, and electronic device
01/03/2013US20130001674 Semiconductor device with voltage compensation structure
01/03/2013US20130001673 Fortification of charge storing material in high k dielectric environments and resulting apparatuses
01/03/2013US20130001669 Semiconductor memory devices and methods of manufacturing the same
01/03/2013US20130001667 Nonvolatile memory device and method for making the same
01/03/2013US20130001665 Mosfet and method for manufacturing the same
01/03/2013US20130001664 Decoupling capacitor circuitry
01/03/2013US20130001660 Planar field effect transistor structure and method
01/03/2013US20130001658 Corner transistor and method of fabricating the same
01/03/2013US20130001657 Self-aligned iii-v mosfet diffusion regions and silicide-like alloy contact
01/03/2013US20130001654 Mask-based silicidation for feol defectivity reduction and yield boost
01/03/2013US20130001652 Magnetoresistive element and method of manufacturing the same
01/03/2013US20130001647 Integration of vertical bjt or hbt into soi technology
01/03/2013US20130001646 ALGaN/GaN HYBRID MOS-HFET
01/03/2013US20130001645 Semiconductor epitaxial substrate
01/03/2013US20130001643 Method of manufacturing photodiode with waveguide structure and photodiode
01/03/2013US20130001641 Defect Mitigation Structures For Semiconductor Devices
01/03/2013US20130001639 Semiconductor device comprising semiconductor substrate having diode region and igbt region
01/03/2013US20130001603 Methods of forming inclined structures on insulation layers, organic light emitting display devices and methods of manufacturing organic light emitting display devices
01/03/2013US20130001594 Electronic Device
01/03/2013US20130001593 Semiconductor device structures including transistors with energy barriers adjacent to transistor channels and associated methods
01/03/2013US20130001591 Finfet design and method of fabricating same
01/03/2013US20130001589 Lateral extended drain metal oxide semiconductor field effect transistor (ledmosfet) with tapered dielectric plates to achieve a high drain-to-body breakdown voltage, a method of forming the transistor and a program storage device for designing the transistor
01/03/2013US20130001587 High electron mobility transistors and methods of manufacturing the same
01/03/2013US20130001586 Semiconductor substrate and method of manufacturing
01/03/2013US20130001583 Semiconductor device and fabrication method thereof
01/03/2013US20130001581 Active matrix liquid crystal display device
01/03/2013US20130001580 Thin film transistor and organic light emitting diode display using the same and method for manufacturing the same
01/03/2013US20130001579 Array Substrate for Fringe Field Switching Mode Liquid Crystal Display and Method of Manufacturing the Same
01/03/2013US20130001575 Methods for stressing transistor channels of a semiconductor device structure, and a related semiconductor device structure
01/03/2013US20130001574 Field transistor structure manufactured using gate last process
01/03/2013US20130001573 Thin film transistor and method of manufacturing the same
01/03/2013US20130001572 Display device, thin-film transistor used for display device, and method of manufacturing thin-film transistors
01/03/2013US20130001568 Semiconductor device and fabrication method thereof
01/03/2013US20130001564 Organic light-emitting display device and method of manufacturing the same
01/03/2013US20130001563 Organic light-emitting display device and method of manufacturing the same
01/03/2013US20130001561 Semiconductor Device and Method of Manufacturing Same
01/03/2013US20130001560 Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and el television
01/03/2013US20130001559 Thin-film transistor and method for manufacturing thin-film transistor
01/03/2013US20130001558 Semiconductor device and manufacturing method of semiconductor device
01/03/2013US20130001557 Semiconductor device and manufacturing method thereof
01/03/2013US20130001555 Semiconductor structure and method for manufacturing the same
01/03/2013US20130001554 Method Of Manufacturing Electric Device, Array Of Electric Devices, And Manufacturing Method Therefor
01/03/2013US20130001552 Test pad structure for reuse of interconnect level masks
01/03/2013US20130001550 Hermetically sealed mems device with a portion exposed to the environment with vertically integrated electronics
01/03/2013US20130001549 Method of manufacturing semiconductor device and semiconductor device
01/03/2013US20130001547 Method for verifying the alignment between integrated electronic devices
01/03/2013US20130001515 Direct growth of graphene on substrates
01/03/2013US20130001507 Semiconductor device and method
01/03/2013US20130001503 Conductive filament based memory elements and methods with improved data retention and/or endurance
01/03/2013US20130001502 Phase-change memory device, flexible phase-change memory device using insulating nano-dot and manufacturing method for the same
01/03/2013US20130001499 Compressive Structure for Enhancing Contact of Phase Change Material Memory Cells
01/03/2013US20130001497 Memory element, method of manufacturing the same, and memory device
01/03/2013US20130001496 Memory element, method of manufacturing the same, and memory device
01/03/2013US20130001495 Multilevel mixed valence oxide (mvo) memory
01/03/2013US20130001280 Metal nanoink and process for producing the metal nanoink, and die bonding method and die bonding apparatus using the metal nanoink
01/03/2013US20130001196 Projected Plasma Source
01/03/2013US20130001069 Sputtering target, manufacturing method thereof, and manufacturing method of semiconductor element
01/03/2013US20130000847 Plasma processing apparatus
01/03/2013US20130000846 Photoresist double patterning apparatus
01/03/2013US20130000556 Apparatus for the deposition of semiconductor material on a glass sheet
01/03/2013US20130000544 Titanium-doped indium oxide films
01/03/2013US20130000459 Polishing pad, method of producing the same and method of producing semiconductor device by using the same
01/03/2013US20130000136 Magnetoresistive sensor and manufacturing method thereof
01/03/2013DE112011101069T5 Verfahren zur Herstellung einer Halbleitervorrichtung A process for producing a semiconductor device
01/03/2013DE112011100907T5 Einheiten auf der Grundlage von Graphenkanälen und Verfahren zu deren Fertigung Units on the basis of graphs channels and methods for their production
01/03/2013DE112011100901T5 Graphen/Nanostruktur-FET mit selbstausgerichteter Kontakt- und Gate-Zone Graphs / nanostructure-FET with self-aligned contact and gate region
01/03/2013DE112011100551T5 Integrierte schaltung und verfahren zur verwendung derselben Integrated circuit and method of using same
01/03/2013DE112010005383T5 Halbleitervorrichtung Semiconductor device
01/03/2013DE112010004296T5 Verfahren zur Herstellung einer Halbleitervorrichtung A process for producing a semiconductor device
01/03/2013DE112010003252T5 Rippen-Antisicherung mit verringerter Programmierspannung Rib antifuse with reduced programming voltage
01/03/2013DE112010000867T5 Herstellungsverfahren für SiC-Einkristall vom n-Typ, dadurch erhaltener SiC-Einkristall vomn-Typ und dessen Anwendung(7) E] Antrag auf vorzeitige Bearbeitung oder PrU Manufacturing method for SiC single crystal n-type SiC single crystal obtained therefrom vomn type and its application (7) E] request for early processing or PrU
01/03/2013DE102012211105A1 Verfahren zur herstellung eines rückwärts sperrenden bipolaren transistorsmit isoliertem gate Process for the preparation of a reverse blocking insulated gate bipolar transistorsmit
01/03/2013DE102012210227A1 Abblätterungsverfahren mit Randausschluss zur Verbesserung der Substrat-Wiederverwendbarkeit Abblätterungsverfahren with edge exclusion to improve the substrate reusability
01/03/2013DE102012207116A1 Mehrschichtverbindungsstrukturen und Verfahren für integrierte Schaltungen Multilayer interconnection structures and methods for integrated circuits
01/03/2013DE102012206596A1 Halbleitervorrichtung Semiconductor device
01/03/2013DE102012105840A1 Verfahren zum Befestigen einer Metallfläche auf einen Träger, Verfahren zum Befestigen eines Chips auf einen Chipträger, Chip-Packungs-Modul und Packungs-Modul A method of securing a metal surface on a substrate, method for mounting a chip on a chip carrier, the chip-package module and package-module
01/03/2013DE102012105685A1 Halbleiterbauelement mit Spannungskompensationsstruktur Semiconductor device with voltage compensation structure
01/03/2013DE102011106922A1 Corner-Transistor und Verfahren zur Herstellung desselben Corner transistor and method of manufacturing the same
01/03/2013DE102011083661A1 Herstellung eines PV-PSA-Verbunds durch Flüssigeinbettung auf Release-Film und seine Verwendung zur Herstellung von PV-Modulen Production of a PV PSA composite by liquid embedding on release film and its use for the production of PV modules
01/03/2013DE102009037141B4 Optisches System zum Erzeugen eines Lichtstrahls zur Behandlung eines Substrats An optical system for generating a light beam for treating a substrate
01/03/2013DE102007044046B4 Verfahren zur internen Kontaktierung eines Leistungshalbleitermoduls Process for the internal contacting of a power semiconductor module
01/03/2013DE102006062932B3 Trockenätzgas für Halbleiterverfahren Dry etching for semiconductor process
01/03/2013DE102006009272B4 Verfahren zur Herstellung eines verspannten Transistors durch eine späte Amorphisierung und durch zu entfernende Abstandshalter A method for producing a strained transistor by a late and amorphization to be removed by spacers
01/03/2013DE102004011175B4 Verfahren zur Aktivierung implantierter Dotierungsatome A method for activating implanted dopant atoms
01/02/2013EP2541626A1 Nitride semiconductor light emitting element and method for manufacturing same
01/02/2013EP2541624A1 Nitride semiconductor element and manufacturing method therefor
01/02/2013EP2541609A1 Semiconductor device