Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
---|
05/07/1991 | US5013685 Method of making a non-alloyed ohmic contact to III-V semiconductors-on-silicon |
05/07/1991 | US5013684 Lasers |
05/07/1991 | US5013683 Method for growing tilted superlattices |
05/07/1991 | US5013682 Method for selective epitaxy using a WSI mask |
05/07/1991 | US5013681 Method of producing a thin silicon-on-insulator layer |
05/07/1991 | US5013680 Process for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithography |
05/07/1991 | US5013679 Cell capacitor of a dynamic random access memory and a method of manufacturing the same |
05/07/1991 | US5013678 Method of making an integrated circuit comprising load resistors arranged on the field oxide zones which separate the active transistor zones |
05/07/1991 | US5013677 Resistor, transistor, capacitor |
05/07/1991 | US5013676 Structure of MIS-type field effect transistor and process of fabrication thereof |
05/07/1991 | US5013675 Semiconductors |
05/07/1991 | US5013674 A method of manufacturing integrated circuits comprising EPROM memory and logic transistors |
05/07/1991 | US5013673 Implantation method for uniform trench sidewall doping by scanning velocity correction |
05/07/1991 | US5013672 Manufacturing process for high-frequency bipolar transistors |
05/07/1991 | US5013671 Process for reduced emitter-base capacitance in bipolar transistor |
05/07/1991 | US5013670 Photoelectric converter |
05/07/1991 | US5013588 Corrosion resistant silicon inorganic polymeric coatings |
05/07/1991 | US5013586 Method and device for the uniformly even application of a resin coating on a substrate |
05/07/1991 | US5013526 Superconducting alloys comprising tungsten, molybdenum, silicon and oxygen |
05/07/1991 | US5013401 Microwave plasma etching method and apparatus |
05/07/1991 | US5013400 Dry etch process for forming champagne profiles, and dry etch apparatus |
05/07/1991 | US5013398 Silicon dioxide or nitride layers, polycrystalline silicon or refractory metal silicide layer, patterns, masking, plasma, tr ifluoromethane, silicon hexafluoride, hydrogen bromide |
05/07/1991 | US5013385 Quad processor |
05/07/1991 | US5013384 Vacuum system |
05/07/1991 | US5013360 For semiconductors in ceramic packages |
05/07/1991 | US5013347 Packaging integrated circuits |
05/07/1991 | US5012969 Method of connecting electrodes |
05/07/1991 | US5012935 Support frame for supporting a semiconductor wafer carrier |
05/07/1991 | US5012924 Carriers for integrated circuits and the like |
05/07/1991 | US5012664 Progressive form die |
05/07/1991 | CA2028938A1 Microwave semiconductor device |
05/07/1991 | CA1283886C Thin film sputtering with angular orientation of emission surface and receiving surface |
05/07/1991 | CA1283885C Etching process for the surface of an indium phosphorus workpiece |
05/04/1991 | WO1991006870A1 Cryogenic probe station |
05/04/1991 | CA2072132A1 Cryogenic probe station |
05/04/1991 | CA2029244A1 Planarizing surfaces of interconnect substrates by diamond turning |
05/02/1991 | WO1991006137A1 Application specific tape automated bonding |
05/02/1991 | WO1991006127A1 Graphotaxially formed photosensitive detector array |
05/02/1991 | WO1991006121A1 Ferro-electric non-volatile variable resistive element |
05/02/1991 | WO1991006120A1 Self-aligning metal interconnect fabrication |
05/02/1991 | WO1991006119A1 Method of producing semiconductor integrated circuit devices |
05/02/1991 | WO1991006117A1 Three dimensional microcircuit structure and process for fabricating the same from ceramic tape |
05/02/1991 | WO1991006116A1 Method of preparing silicon carbide surfaces for crystal growth |
05/02/1991 | WO1991006061A1 Improved routing system and method for integrated circuits |
05/02/1991 | WO1991005887A1 Vacuum vessel |
05/02/1991 | WO1991004573A3 Excimer laser ablation method and apparatus for microcircuit device fabrication |
05/02/1991 | EP0425419A2 Methods and apparatus for contamination control in plasma processing |
05/02/1991 | EP0425418A2 Base developable negative tone photoresist |
05/02/1991 | EP0425411A2 Highly sensitive dry developable deep UV photoresist |
05/02/1991 | EP0425404A2 Automated re-work shop order scheduling system |
05/02/1991 | EP0425294A2 Two-color molded article for use in circuit formation |
05/02/1991 | EP0425275A2 Address input circuitry of a semiconductor memory device |
05/02/1991 | EP0425244A2 Semiconductor device having a heteroepitaxial substrate |
05/02/1991 | EP0425242A1 Bipolar transistor structure |
05/02/1991 | EP0425166A1 Polysilicon etch using bromine |
05/02/1991 | EP0425162A2 Improved aluminum metallization for semiconductor devices |
05/02/1991 | EP0425148A2 Method of forming multilayer thick film circuits |
05/02/1991 | EP0425147A2 Metallization processing |
05/02/1991 | EP0425090A1 Film deposition method and apparatus |
05/02/1991 | EP0425084A1 Process for forming deposited film by use of alkyl aluminum hydride |
05/02/1991 | EP0425037A2 A method of manufacturing a semiconductor device |
05/02/1991 | EP0425032A1 Integrated CMOS circuit |
05/02/1991 | EP0424981A1 Parallelepiped shaped crucible for single or quasi-single crystal silicon ingots |
05/02/1991 | EP0424964A2 Read only memory device |
05/02/1991 | EP0424963A2 Exposure mask |
05/02/1991 | EP0424962A2 Semiconductor memory device |
05/02/1991 | EP0424940A2 Positive photosensitive polyimide resin composition |
05/02/1991 | EP0424935A2 Circuit for driving a liquid crystal panel |
05/02/1991 | EP0424926A2 Bi-CMOS integrated circuit |
05/02/1991 | EP0424925A2 Method of removing electric charge accumulated on a semiconductor substrate in ion implantation |
05/02/1991 | EP0424908A2 Wiring-pattern-determination system and method |
05/02/1991 | EP0424905A2 Semiconductor device manufacturing process |
05/02/1991 | EP0424858A2 Semiconductor device and soldering method employable in manufacturing the same |
05/02/1991 | EP0424857A2 Process for producing ohmic electrode for p-type cubic system boron nitride |
05/02/1991 | EP0424825A2 Method for measuring DC current/voltage characteristic of semi-conductor device |
05/02/1991 | EP0424805A2 Copolyimide ODPA/BPDA/4,4'-ODA/p-PDA |
05/02/1991 | EP0424766A2 Radiation-sensitive composition and process for the formation of relief patterns |
05/02/1991 | EP0424710A2 Thyristor and method of manufacturing the same |
05/02/1991 | EP0424638A2 Fabrication of a semiconductor device including a step for prodiving a layer of insulating material formed from an organo-silica sol |
05/02/1991 | EP0424623A2 Three-dimensional semiconductor structures formed from planar layers |
05/02/1991 | EP0424620A2 Process and apparatus for chemically coating opposing faces of a workpiece |
05/02/1991 | EP0424608A1 Forming wide dielectric filled isolation trenches in semiconductors |
05/02/1991 | EP0424530A1 Resin-sealed semiconductor device |
05/02/1991 | EP0424522A1 Interconnect device and method of manufacture thereof |
05/02/1991 | EP0424513A1 Method of making a hermetic seal in a solid-state device |
05/02/1991 | EP0424464A1 Thermally stable phenolic resin compositions and their use in light-sensitive compositions. |
05/02/1991 | EP0424394A1 Means for reducing damage to jfets from electrostatic discharge events. |
05/02/1991 | EP0424375A1 Monolithic channeling mask having amorphous/single crystal construction |
05/02/1991 | DE4034186A1 Barrier layer FET - esp. JFET made of cpd. semiconductor |
05/02/1991 | DE4034169A1 DRAM memory cell field with numerous cells for unit signals - has specified foreign atom. concentration in section coupled to capacitor |
05/02/1991 | DE4033309A1 MOSFET semiconductor device - having ion-implanted regions with impurity ion concn. profile |
05/02/1991 | DE3939527A1 Metal strip with support platelet for integrated circuit chips - has end strap(s) and other strap(s) rougher than terminal fins |
05/02/1991 | DE3935998A1 Gold-doped silicon semiconductor device - with axially structured charge carrier life-time profile |
05/02/1991 | DE3933501A1 Light-induced gas etching process - with etch prod. removal solely by photo-desorption |
05/02/1991 | CA2070405A1 Ferro-electric non-volatile variable resistive element |
05/01/1991 | WO1991006978A2 Multi-layer lead frames for integrated circuit packages |
05/01/1991 | CN1051105A High density dynamic cell |
05/01/1991 | CN1012494B Multi-layered ceramic coating using estersil and metalic oxide |
05/01/1991 | CA2065295A1 Multi-layer lead frames for integrated circuit packages |
05/01/1991 | CA2023388A1 Chip breaker for polycrystalline cbn and diamond compacts |