Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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03/27/1991 | EP0419287A2 Method of correcting astigmatism of variable shaped beam |
03/27/1991 | EP0419256A1 Carbon doping MOSFET substrate to suppress hot electron trapping |
03/27/1991 | EP0419240A2 Exposure apparatus |
03/27/1991 | EP0419160A1 Amorphous silicon semiconductor devices |
03/27/1991 | EP0419147A2 Resist composition |
03/27/1991 | EP0419136A1 Electronic device with internal defect correction member |
03/27/1991 | EP0419128A1 Silicon MOSFET doped with germanium to increase lifetime of operation |
03/27/1991 | EP0419105A2 Integrated circuit having an embedded digital signal processor |
03/27/1991 | EP0419073A2 Process for production of a semiconductor device |
03/27/1991 | EP0419062A2 Electrode formed of semiconductor compounds and method of forming them |
03/27/1991 | EP0419061A2 Method for pulling a silicon single crystal |
03/27/1991 | EP0419053A1 Dielectric film deposition method and apparatus |
03/27/1991 | EP0419044A1 Single crystal silicon |
03/27/1991 | EP0418983A1 Method of manufacturing a field effect transistor and a semiconductor element |
03/27/1991 | EP0418953A1 Method of manufacturing a semiconductor body comprising a mesa |
03/27/1991 | EP0418914A2 Semiconductor memory device |
03/27/1991 | EP0418911A2 Semiconductor memory device |
03/27/1991 | EP0418896A2 Circuit configuration for the protection of electronic circuits against a voltage surge |
03/27/1991 | EP0418890A2 Solid state laser device for lithography light source and semiconductor lithography method |
03/27/1991 | EP0418870A2 Radiation sensitive polymer composition |
03/27/1991 | EP0418802A2 Wiring structure in a wafer-scale integrated circuit |
03/27/1991 | EP0418777A2 Wafer scale semiconductor device |
03/27/1991 | EP0418749A2 Integrated device with improved connections between the pins and the semiconductor material chip |
03/27/1991 | EP0418737A1 Method of manufacturing a semiconductor substrate dielectric isolating structure |
03/27/1991 | EP0418670A2 Process for fabricating high performance BiMOS circuits |
03/27/1991 | EP0418592A1 Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus |
03/27/1991 | EP0418554A2 Chemical vapor deposition apparatus |
03/27/1991 | EP0418541A2 Multi-zone planar heater assembly and method of operation |
03/27/1991 | EP0418540A2 Dry etching method |
03/27/1991 | EP0418505A2 Method of manufacturing a Bi CMOS semiconductor device |
03/27/1991 | EP0418500A2 Semiconductor device for charge transfer |
03/27/1991 | EP0418491A2 Dram cell with trench capacitor and buried lateral contact |
03/27/1991 | EP0418468A1 Method for producing an ultra-thin dielectric for microelectronics applications |
03/27/1991 | EP0418438A1 Method and apparatus for the plasma etching, substrate cleaning or deposition of materials by D.C. glow discharge |
03/27/1991 | EP0418427A2 Exposure process |
03/27/1991 | EP0418423A1 Process for etching silicon anisotropically |
03/27/1991 | EP0418422A1 CMOS compatible bipolar transistor having a reduced collector-substrate capacitance, and method for making the same |
03/27/1991 | EP0418421A1 Bipolar transistor having a reduced collector capacitance, and method for making the same |
03/27/1991 | EP0418360A1 Dielectric substrate with reduced and stabilized surface electrical conductivity, process for its manufacture, and use of the substrate |
03/27/1991 | EP0416012A4 Etching solutions containing anionic sulfate esters of alkylphenol polyglycidol ethers |
03/27/1991 | CN1050289A Design system for vlsi chips arranged on carrier and module thus designed |
03/26/1991 | US5003511 Voltage supply switching device for nonvolatile memories in MOS technology |
03/26/1991 | US5003374 Semiconductor wafer |
03/26/1991 | US5003373 Aluminum electrode, copper ball at the end of a copper wire, a copper-aluminum alloy |
03/26/1991 | US5003371 Fuse-melting device |
03/26/1991 | US5003370 High power frequency semiconductor device with improved thermal resistance |
03/26/1991 | US5003368 Turn-off thyristor |
03/26/1991 | US5003366 Hetero-junction bipolar transistor |
03/26/1991 | US5003365 Bipolar transistor with a sidewall-diffused subcollector |
03/26/1991 | US5003342 Exposure apparatus |
03/26/1991 | US5003253 Millimeter-wave active probe system |
03/26/1991 | US5003199 Emitter coupled logic circuit having an active pull-down output stage |
03/26/1991 | US5003188 Semiconductor waxer detection system |
03/26/1991 | US5003183 Ion implantation apparatus and method of controlling the same |
03/26/1991 | US5003178 Large-area uniform electron source |
03/26/1991 | US5003152 Microwave transforming method and plasma processing |
03/26/1991 | US5003151 Method and control arrangement for the evaporation rate of an electron beam |
03/26/1991 | US5003131 Connection structure between ceramic body and outer terminal |
03/26/1991 | US5003062 Dielectric multilayer integrated circuits, silicon dioxide coating over patterned conductive layer, vacuum degassing |
03/26/1991 | US5002902 Multilayer semiconductor with insulator layers, apertures formed by etching |
03/26/1991 | US5002899 Electrical contacts on diamond |
03/26/1991 | US5002898 Integrated-circuit device isolation |
03/26/1991 | US5002896 Masking a multilayer gate electrode to form a semiconductor, patterns, dopes |
03/26/1991 | US5002818 Reworkable epoxy die-attach adhesive |
03/26/1991 | US5002808 Adhesion methods employing benzocyclobutene-based organosilane adhesion aids |
03/26/1991 | US5002796 Process for forming functional zinc oxide films using alkyl zinc compound and oxygen-containing gas |
03/26/1991 | US5002793 Vapor deposition, decomposition, microwaving; semiconductors |
03/26/1991 | US5002648 Process for producing an inorganic thin film on a substrate using a target |
03/26/1991 | US5002632 Reaction of a metastable with etchant gas in activation zone |
03/26/1991 | US5002631 Plasma etching apparatus and method |
03/26/1991 | US5002618 Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film |
03/26/1991 | US5002464 Double buffer vacuum system |
03/26/1991 | US5002367 Multi-level circuits, methods for their fabrication, and display devices incorporating such circuits |
03/26/1991 | US5002217 Bonding method and bonding apparatus |
03/26/1991 | US5002010 Vacuum vessel |
03/26/1991 | CA2026086A1 Method of fabricating highly lattice mismatched quantum well structures |
03/26/1991 | CA1282189C Use of adherent layer for filling contact holes for semiconductor devices |
03/26/1991 | CA1282188C Multilayer metallization method for integrated circuits |
03/26/1991 | CA1282186C Mos i/o protection using switched body circuit design |
03/23/1991 | WO1991004577A1 Hot-carrier suppressed sub-micron misfet device |
03/23/1991 | WO1991004513A1 Method of optical near field microlithography and microlithography devices implementing same |
03/23/1991 | CA2066586A1 Method of optical near field microlithography and microlithography devices implementing same |
03/23/1991 | CA2065242A1 Hot-carrier suppressed sub-micron misfet device |
03/23/1991 | CA2025681A1 Photoreactive resin compositions developable in a semi-aqueous solution |
03/22/1991 | CA2025871A1 Solid state laser device for lithography light source and semiconductor lithography method |
03/22/1991 | CA2023023A1 Carbon doping mosfet substrate to suppress hot electron trapping |
03/21/1991 | WO1991003841A1 Element, method of fabricating the same, semiconductor element and method of fabricating the same |
03/21/1991 | WO1991003837A1 Method of producing read-only semiconductor memory |
03/21/1991 | WO1991003835A1 Reworkable epoxy die-attach adhesive |
03/21/1991 | WO1991003834A1 Method for selectively depositing material on substrates |
03/21/1991 | WO1991003833A1 Electrostatic handling device |
03/21/1991 | WO1991003816A1 X-ray phosphor imaging screen and method of making same |
03/21/1991 | WO1991003769A1 Radiation-sensitive compositions containing fully substituted novolak polymers |
03/21/1991 | DE3930536A1 Bipolar transistor with large band-gap emitter material - uses single crystalline silicon as emitter and collector and forms base-region from silicon-germanium cpd. |
03/20/1991 | EP0418185A1 Method of fabricating a narrow base transistor |
03/20/1991 | EP0418018A2 Compact specimen processing station |
03/20/1991 | EP0417997A1 Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride |
03/20/1991 | EP0417955A1 Shallow junction formation by ion-implantation |
03/20/1991 | EP0417948A2 Method and apparatus for pulling up silicon single crystal |
03/20/1991 | EP0417942A1 Manufacture of polycrystalline silicon thin films and of transistors therefrom |