| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 08/16/1994 | US5338972 Lead frame with deformable buffer portions |
| 08/16/1994 | US5338971 Electronic device structure with studs locating lead frame on backing plate |
| 08/16/1994 | US5338968 Method of forming isolated regions of oxide |
| 08/16/1994 | US5338967 Semiconductor device structure with plated heat sink and supporting substrate |
| 08/16/1994 | US5338963 Soft error immune CMOS static RAM cell |
| 08/16/1994 | US5338960 Formation of dual polarity source/drain extensions in lateral complementary channel MOS architectures |
| 08/16/1994 | US5338959 Thin film transistor with three dimensional multichannel structure |
| 08/16/1994 | US5338958 Semicondcutor device with high speed field effect transistor structure reducing concentrations of electric field near drain region |
| 08/16/1994 | US5338957 Nonvolatile semiconductor device and a method of manufacturing thereof |
| 08/16/1994 | US5338956 Electrically erasable and programmable read only memory having a thin film transferring transistor over a floating gate memory transistor |
| 08/16/1994 | US5338955 Semiconductor device having stacked type capacitor |
| 08/16/1994 | US5338954 Semiconductor memory device having an insulating film and a trap film joined in a channel region |
| 08/16/1994 | US5338953 Electrically erasable and programmable semiconductor memory device with trench memory transistor and manufacturing method of the same |
| 08/16/1994 | US5338952 Non-volatile memory |
| 08/16/1994 | US5338951 Structure of high dielectric constant metal/dielectric/semiconductor capacitor for use as the storage capacitor in memory devices |
| 08/16/1994 | US5338949 Semiconductor device having series-connected junction field effect transistors |
| 08/16/1994 | US5338945 Silicon carbide field effect transistor |
| 08/16/1994 | US5338942 Semiconductor projections having layers with different lattice constants |
| 08/16/1994 | US5338900 Structures for electrically conductive decals filled with inorganic insulator material |
| 08/16/1994 | US5338899 Packaging of electronic devices |
| 08/16/1994 | US5338897 Coaxial shield for a semiconductor device |
| 08/16/1994 | US5338750 Forming layers of silicon oxide, undoped polysilicon, silicon nitride on wafer, doping polysilicon, patterning nitride, thermally oxidizing to form oxide isolation region, removing silicon nitride and doped polysilicon with phosphoric acid |
| 08/16/1994 | US5338705 Pressure differential downset |
| 08/16/1994 | US5338704 Applying layer of conductive adhesive to lead portion of frame, solidifying, bonding second end of semiconductor wire to solidified adhesive |
| 08/16/1994 | US5338703 Applying photoresist film, forming insulating film, forming resist pattern, etching insulation and photoresist to form opening, forming side walls of second insulating film, etching recess, side walls, depositing gate metal, dissolving resist |
| 08/16/1994 | US5338702 Chromium as etch barrier |
| 08/16/1994 | US5338701 Method for fabrication of w-polycide-to-poly capacitors with high linearity |
| 08/16/1994 | US5338700 Method of forming a bit line over capacitor array of memory cells |
| 08/16/1994 | US5338699 Method of making a semiconductor integrated device having gate sidewall structure |
| 08/16/1994 | US5338698 Etching and metal deposition selectively on semiconductor |
| 08/16/1994 | US5338697 Doping method of barrier region in semiconductor device |
| 08/16/1994 | US5338696 Masking base regions of bipolar transistors, doping to form channels with first characteristics, forming polysilicon layer, masking channels, doping, diffusing dopants to provide base regions with second characteristics |
| 08/16/1994 | US5338695 Making walled emitter bipolar transistor with reduced base narrowing |
| 08/16/1994 | US5338694 Method of fabricating BiCMOS device |
| 08/16/1994 | US5338693 Using arsenic doping to form source region, forming gate oxide toward end of processing |
| 08/16/1994 | US5338692 Forming lateral potential barriers in two-dimensional charge carrier layer which act as insulating boundaries dividing starting structure into source, drain, gate, channel regions, forming contacts |
| 08/16/1994 | US5338647 Reflection type photomask and reflection type photolithography method comprising a concavo-convex surface |
| 08/16/1994 | US5338641 Positive-working radiation-sensitive mixture and copying material produced therefrom comprising an α,α-bis(sulfonyl) diazo methane as an acid forming compound |
| 08/16/1994 | US5338630 Observing optical characteristics of exposed undeveloped photoresist without removing wafer from stepper |
| 08/16/1994 | US5338626 Covering transparent substrate with opaque patterned layer and resist layer, then exposure to various actinic radiations, development, anisotropic etching |
| 08/16/1994 | US5338424 Masks for applying dots on semiconductor wafers |
| 08/16/1994 | US5338423 Method of eliminating metal voiding in a titanium nitride/aluminum processing |
| 08/16/1994 | US5338416 Electrochemical etching process |
| 08/16/1994 | US5338415 Method for detection of chemicals by reversible quenching of silicon photoluminescence |
| 08/16/1994 | US5338400 Micromachining process for making perfect exterior corner in an etchable substrate |
| 08/16/1994 | US5338399 Etching gas containing saturated fluorocarbon having cyclic portion |
| 08/16/1994 | US5338398 Plasma etching using high purity chlorine and oxygen-bearing gases |
| 08/16/1994 | US5338397 Method of forming a semiconductor device |
| 08/16/1994 | US5338395 Method for enhancing etch uniformity useful in etching submicron nitride features |
| 08/16/1994 | US5338394 Using mixture of silicon tetrachloride and methane or hydrogen |
| 08/16/1994 | US5338393 Method for the local removal of UV-transparent insulation layers on a semiconductor substrate |
| 08/16/1994 | US5338391 Method of making a substrate having selectively releasing conductive runners |
| 08/16/1994 | US5338390 Two conductive electrodes positioned on opposite sides of wafer in etchant bath; monitoring impedance |
| 08/16/1994 | US5338388 Controlled irradiation |
| 08/16/1994 | US5338381 Apparatus and method for bonding outer leads |
| 08/16/1994 | US5338370 Conductive substrate with transparent conductive layer, non-monocrystalline layer of one conductivity type containing silicon and metallic element in transparent layer, intrinsic layer, different conductivity layer |
| 08/16/1994 | US5338363 Chemical vapor deposition method, and chemical vapor deposition treatment system and chemical vapor deposition apparatus therefor |
| 08/16/1994 | US5338223 Hybrid wafer probe |
| 08/16/1994 | US5337668 Method of and apparatus for producing register mark pattern |
| 08/16/1994 | US5337475 Filling the aperturs in self-supporting dielectric layer with a mixture of a glass-ceramic powder, a metal or alloy particle and binders, heating to burn off the binder, sintering to form electroconductive passageway |
| 08/16/1994 | US5337474 Process for fabricating electronic devices and image sensor |
| 08/16/1994 | US5337467 Method of producing wire-bonded substrate assembly |
| 08/16/1994 | US5337466 Method of making a multilayer printed wiring board |
| 08/16/1994 | CA2007469C Secure integrated circuit chip with conductive shield |
| 08/11/1994 | DE4403553A1 Electron cyclotron resonance apparatus |
| 08/11/1994 | DE4403552A1 Electron cyclotron resonance device |
| 08/11/1994 | DE4402085A1 Kapazitiver, an seiner Oberfläche mikrobearbeiteter Differenzdrucksensor und Verfahren zu dessen Herstellung Capacitive, micro-machined on its surface differential pressure sensor and method for its production |
| 08/11/1994 | DE4303790A1 Method for producing a positively engaging connection between semiconductor components and metallic surface of carrier elements |
| 08/11/1994 | DE4303398A1 Substrate carrier for treatment apparatus |
| 08/10/1994 | EP0610130A1 Method of manufacturing à semi-conducteur component, in particular a buried ridge laser, and component made by this method |
| 08/10/1994 | EP0610083A1 A display apparatus having a two-terminal device including a zinc sulfide layer and a method for producing the same |
| 08/10/1994 | EP0609919A2 Active matrix panel |
| 08/10/1994 | EP0609918A2 A method for forming a bump electrode structure of a semiconductor device |
| 08/10/1994 | EP0609867A2 Process for fabricating a semiconductor crystallized layer and process for fabricating a semiconductor device using the same |
| 08/10/1994 | EP0609861A2 Ceramic substrate and manufacturing method thereof |
| 08/10/1994 | EP0609829A2 A non-volatile semiconductor memory device and a method for fabricating the same |
| 08/10/1994 | EP0609799A2 Improvements in heteroepitaxy by large surface steps |
| 08/10/1994 | EP0609684A1 Positive-working light-sensitive composition |
| 08/10/1994 | EP0609658A2 Output circuit device for charge transfer element |
| 08/10/1994 | EP0609635A1 Tungsten liner process for simultaneous formation of integral contact studs and interconnect lines |
| 08/10/1994 | EP0609576A2 Concurrent interactive wire editing |
| 08/10/1994 | EP0609551A1 Method of planarizing semiconductor |
| 08/10/1994 | EP0609536A2 Process for manufacturing vertical MOS transistors |
| 08/10/1994 | EP0609512A1 Apparatus for forming a film |
| 08/10/1994 | EP0609504A1 Thin-film electrostatic wafer chuck |
| 08/10/1994 | EP0609501A2 Aluminium based metallization for semiconductor device |
| 08/10/1994 | EP0609496A1 Process of making a metallization stage comprising contacts and runners which canneet these contacts |
| 08/10/1994 | EP0609351A1 Bipolar junction transistor exhibiting improved beta and punch-through characteristics |
| 08/10/1994 | EP0609327A1 Processing system |
| 08/10/1994 | EP0609237A1 Harmonic and subharmonic isolator for plasma discharge |
| 08/10/1994 | EP0598794A4 High frequency jfet and method for fabricating the same. |
| 08/10/1994 | EP0500670B1 Method for halide etching in the presence of water of semi-conductor substrates |
| 08/10/1994 | CN1090672A A dynamic random access memory made by using silic on-on-insulator and a method for making the same |
| 08/10/1994 | CN1090522A Developer preparing apparatus and developer preparing method |
| 08/10/1994 | CA2114059A1 Wafer stage with reference surface |
| 08/09/1994 | US5337324 Method for controlling movement of neutral atom and apparatus for carrying out the same |
| 08/09/1994 | US5337317 Minimizing the programming time in a semiconductor integrated memory circuit having an error correction function |
| 08/09/1994 | US5337281 Non-volatile semiconductor memory device in which data can be erased on a block basis and method of erasing data on a block basis in non-volatile semiconductor memory device |
| 08/09/1994 | US5337278 Low-power decoder for selecting redundant memory cells |
| 08/09/1994 | US5337277 Row redundancy circuit for a semiconductor memory device |