H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
11/2004
11/25/2004	US20040232459 Semiconductor device and manufacturing method thereof
11/25/2004	US20040232458 Ferroelectric memory and method of fabricating the same
11/25/2004	US20040232457 Memory architecture with series grouped by cells
11/25/2004	US20040232456 Elevated photodiode in an image sensor
11/25/2004	US20040232455 Methods and apparatus for attaching a die to a substrate
11/25/2004	US20040232453 Method for manufacturing a semiconductor device
11/25/2004	US20040232452 Module component
11/25/2004	US20040232450 Self-aligned trench MOS junction field-effect transistor for high-frequency applications
11/25/2004	US20040232448 Layout style in the interface between input/output (I/O) cell and bond pad
11/25/2004	US20040232445 Semiconductor device, layout method and apparatus and program
11/25/2004	US20040232444 Semiconductor device with dummy electrode
11/25/2004	US20040232443 Wire structure a thin film transistor substrate of using the wire structure and a method of manufacturing the same
11/25/2004	US20040232442 Semiconductor device and a method of manufacturing the same and a mounting structure of a semiconductor device
11/25/2004	US20040232440 Compound semiconductor substrates and method of fabrication
11/25/2004	US20040232433 Vertical geometry InGaN LED
11/25/2004	US20040232432 Method of manufacturing an active matrix substrate and an image display device using the same
11/25/2004	US20040232430 Structure and method for fabricating semiconductor structures and devices for detecting an object
11/25/2004	US20040232428 Semiconductor light emitting element and method of making same
11/25/2004	US20040232427 P-type group II-VI semiconductor compounds
11/25/2004	US20040232424 Thin film transistor device and method of manufacturing the same
11/25/2004	US20040232423 Semiconductor integrated circuit and fabrication method thereof
11/25/2004	US20040232422 Wafer gettering using relaxed silicon germanium epitaxial proximity layers
11/25/2004	US20040232421 Liquid crystal display device and fabrication method thereof
11/25/2004	US20040232419 Semiconductor device and method of manufacturing the same
11/25/2004	US20040232417 Pinned photodiode for a CMOS image sensor and fabricating method thereof
11/25/2004	US20040232416 Semiconductor device, reflection type liquid crystal display device, and reflection type liquid crystal projector
11/25/2004	US20040232415 Vacuum processing method, vacuum processing apparatus, semiconductor device manufacturing method and semiconductor device
11/25/2004	US20040232414 Interconnect routing over semiconductor for editing through the back side of an integrated circuit
11/25/2004	US20040232413 Semiconductor device and manufacturing method thereof
11/25/2004	US20040232412 Group II-VI semiconductor devices
11/25/2004	US20040232408 Bilayer high dielectric constant gate insulator
11/25/2004	US20040232404 Boron phosphide-based semiconductor device and production method thereof
11/25/2004	US20040232403 Tuned bandwidth photocathode for transmission negative electron affinity devices
11/25/2004	US20040232386 Paste composed of metal or alloy powder having the form of fine metal particles linked in a chain shape; may be paramagnetic; capable of further reducing the electrical resistance of an anisotropic conductive film; forming a plated coating having a uniform crystal structure
11/25/2004	US20040232379 Multi-oxidizer-based slurry for nickel hard disk planarization
11/25/2004	US20040232353 Method and system for single ion implanation
11/25/2004	US20040232350 Ion implanting method and apparatus
11/25/2004	US20040232346 Image sensor and manufacturing method thereof
11/25/2004	US20040232332 Method of alignment for efficient defect review
11/25/2004	US20040232313 System and method for lithography process monitoring and control
11/25/2004	US20040232210 Pre-applied fluxing underfill composition having pressure sensitive adhesive properties
11/25/2004	US20040232136 Heat-treating apparatus
11/25/2004	US20040232126 Laser annealing apparatus and method of fabricating thin film transistor
11/25/2004	US20040232124 Workpiece dividing method utilizing laser beam
11/25/2004	US20040232121 Method for fabricating polishing pad using laser beam and mask
11/25/2004	US20040232116 Method for manufacturing a display device including irradiating overlapping regions
11/25/2004	US20040232111 Method and apparatus for etching silicon wafer and method for analysis of impurities
11/25/2004	US20040232104 Process for the fabrication of thin-film device and thin-film device
11/25/2004	US20040232036 Lid unit for thin plate supporting container
11/25/2004	US20040232000 A bright tin or bright lead-free tin-alloy having no whiskers after 4 months storage at 52 degrees C. and 98% relative humidity; preferred alloying elements are nickel, copper, bismuth, zinc, silver or indium
11/25/2004	US20040231997 Batch processing method for processing a number of substrates simultaneously; substrate holders which have heating medium flow passages regulate the temperature of the holding portions as a whole; for embedding interconnects in the surface of a substrate like a semiconductor
11/25/2004	US20040231996 Rotating the integrated circuit wafer during electrodeposition, by immersing in an electrolytic solution, prevent defects in plated copper films
11/25/2004	US20040231994 Includes an anode, a mask with openings supported between the anode and the wafer surface defining active regions by which a rate of conductive material deposition onto the surface can be varied, a conductive mesh below the upper mask surface, and an electrolyte
11/25/2004	US20040231989 Substrate processing appartus and method
11/25/2004	US20040231971 Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank
11/25/2004	US20040231878 Electronic circuit connecting structure, and its connecting method
11/25/2004	US20040231798 Gas delivery system for semiconductor processing
11/25/2004	US20040231797 Apparatus for manufacturing semiconductor device
11/25/2004	US20040231795 Preconditioning a processing chamber used to form a barrier layer on top of a copper layer by depositing a seasoning layer of silicon oxide on exposed surfaces and optionally exposing the chamber to a plasma before introducing a substrate bearing a copper layer
11/25/2004	US20040231794 Substrate processing apparatus and method
11/25/2004	US20040231793 Method of processing a workpiece, and a work carrier, in particular of porous ceramic
11/25/2004	US20040231777 Baking a polysiloxane coating (especially on a semiconductor wafer) in an atmosphere that includes a catalytic agent gas containing a mixture of ammonia and water, at 300-400 degrees C. to form and inter-level insulating film with a low dielectric constant
11/25/2004	US20040231759 Production method for anneal wafer and anneal wafer
11/25/2004	US20040231758 Silver-containing particles, method and apparatus of manufacture, silver-containing devices made therefrom
11/25/2004	US20040231711 Spin chuck for wafer or LCD processing
11/25/2004	US20040231698 High pressure processing apparatus and method
11/25/2004	US20040231697 Computer subsystem is used to control the signal parameters for a uniform cavitation energy
11/25/2004	US20040231695 For removing deposits in equipment for producing semiconductor or liquid crystal, comprising fluorine gas containing 1 vol % or less of oxygen and/or oxygen-containing compound; fluorine may be produced in situ through decomposition of a fluorine compound such as SiF4, HF, CF4, NF3 and WF6
11/25/2004	US20040231600 Wafer carrier locking device
11/25/2004	US20040231594 Microdeposition apparatus
11/25/2004	US20040231593 Apparatus for microdeposition of multiple fluid materials
11/25/2004	US20040231592 Apparatus for processing substrate
11/25/2004	US20040231588 System and method for preferential chemical vapor deposition
11/25/2004	US20040231587 System for depositing a layered film
11/25/2004	US20040231585 Thin film forming method and thin film forming apparatus
11/25/2004	US20040231584 Spin coating apparatus for coating photoresist
11/25/2004	US20040231390 Extrusion tool, method for manufacturing shaped article with fins, and heat sink
11/25/2004	US20040231245 Composite material and processing method using the material
11/25/2004	US20040231188 Megasonic cleaner and dryer
11/25/2004	US20040231179 Dry air supply device
11/25/2004	US20040231146 Intermediate product manufacturing apparatus, and intermediate product manufacturing method
11/25/2004	DE4234992B4 Verfahren zur Herstellung einer integrierten Schaltung mit komplementären n-Kanal und p-Kanal Vorrichtungen A method of fabricating an integrated circuit with complementary n-channel and p-channel devices
11/25/2004	DE19732807B4 Integriertes Schaltungsbauelement The integrated circuit device
11/25/2004	DE10360966A1 CTE-Angepasste, Anwendungsspezifische Wärmesenkenanordnung CTE Custom, Application Specific heat sink assembly
11/25/2004	DE10355319A1 Photoresist-Entfernerzusammensetzungen Photoresist Entfernerzusammensetzungen
11/25/2004	DE10327612A1 Production of semiconductor bodies based on nitride compound semiconductor material, especially radiation-emitting semiconductor chips, comprises forming a mask layer on a substrate having windows, and further processing
11/25/2004	DE10319894A1 Dielectric focus ring for wafer located in processing position on electrostatic chuck in plasma etching installation with potential difference between wafer potential and focus ring potential
11/25/2004	DE10319521A1 Verfahren und Vorrichtung zum Behandeln von scheibenförmigen Substraten Method and device for treating disk-like substrates
11/25/2004	DE10319497A1 SOI-Feldeffekttransistorelement mit einem ohmschen Substratkontakt SOI field effect transistor element having an ohmic substrate contact
11/25/2004	DE10319496A1 Verfahren zum Bereitstellen von kontextspezifischen Rezepten in einer Halbleiterherstellungsstätte durch Definieren von Produktkategorien A method for providing context-specific recipes in a semiconductor manufacturing facility by defining product categories
11/25/2004	DE10319470A1 Metall-Kunststoff-Verbundbauteil und Verfahren zu dessen Herstellung Metal-plastic composite component and process for its preparation
11/25/2004	DE10319272A1 Multifunktionsträger sowie zugehörige Andockstation Multifunctional support and associated docking station
11/25/2004	DE10319136A1 Verbesserte mit Stickstoff angereicherte Barrierenschicht mit kleinem ε für eine Kupfermetallisierungsschicht Improved enriched with nitrogen barrier layer with small ε for copper metallization
11/25/2004	DE10319135A1 Verfahren zum Elektroplattieren von Kupfer über einer strukturierten dielektrischen Schicht, um die Prozess-Gleichförmigkeit eines nachfolgenden CMP-Prozesses zu verbessern A method for electroplating copper on a patterned dielectric layer in order to improve process uniformity of a subsequent CMP process
11/25/2004	DE10318688A1 Verfahren zum Trennen der elektrischen Verbindungsknoten bei IC-Frames und Verfahren zur Herstellung eines elektronischen Bauteils sowie von Frames dafür A method for separating the electrical connection with IC node frames and methods for manufacturing an electronic component as well as frames for
11/25/2004	DE10318681A1 System removing rim of substrate layer and for substrate coating, mainly with photolacquer film, for use in photolithographic process
11/25/2004	DE10318625A1 Memory cell used in DRAMs has an auxiliary structure formed in active regions and an addressing line formed in the region between the substrate surface and the upper edge of the auxiliary structure
11/25/2004	DE10318568A1 Siliziumsubstrat mit positiven Ätzprofilen mit definiertem Böschungswinkel und Verfahren zur Herstellung Silicon substrate with positive etch profiles with a defined angle of approach and methods of making
11/25/2004	DE10318422A1 Hochfrequenz-Bipolartransistor und Verfahren zur Herstellung desselben Of the same high-frequency bipolar transistor and method for producing
11/25/2004	DE10318284A1 Verfahren zur Herstellung einer verspannten Schicht auf einem Substrat und Schichtstruktur A method for producing a strained layer on a substrate and layered structure

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