Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2006
03/16/2006DE4342817B4 Verfahren zur Bildung eines Kontaktloches für eine Metall-Leitung in einem Halbleiter-Bauelement A method of forming a contact hole for a metal line in a semiconductor device
03/16/2006DE19835840B4 Herstellungsverfahren für einen Halbleiterchip Manufacturing method of a semiconductor chip
03/16/2006DE19716791B4 Verfahren zum Herstellen von Kontaktöffnungen in einer mehrschichtigen Halbleiterstruktur A method for producing via holes in a multilayer semiconductor structure
03/16/2006DE19709204B9 LCD-Vorrichtung und Herstellungsverfahren dafür LCD device and manufacturing method thereof
03/16/2006DE19647398B4 Bipolarer Transistor mit isoliertem Gate The insulated gate bipolar transistor
03/16/2006DE19541039B4 Chip-Modul sowie Verfahren zu dessen Herstellung -Chip module and method of producing the
03/16/2006DE19516339B4 Verfahren zur Herstellung eines Halbleiterbauelementes mit niederohmiger Gateelektrode A process for producing a semiconductor device having low-resistance gate electrode
03/16/2006DE112004000659T5 Ultraphobe Oberfläche für Hochdruckflüssigkeiten Ultraphobic surface for high pressure fluids
03/16/2006DE10394220T5 Modifizierte Cycloolefin-Copolymere, Verfahren zu deren Herstellung und Verwendungen dieser Polymere Modified cycloolefin copolymers, processes for their production and uses of these polymers
03/16/2006DE10303875B4 Struktur, insbesondere Halbleiterstruktur, sowie Verfahren zur Herstellung einer Struktur Structure, in particular semiconductor structure, as well as methods for manufacturing a structure
03/16/2006DE10297818T5 Anbringen von Flipchips an Substraten Attaching flip chips to substrates
03/16/2006DE10201992B4 Vorrichtung zur plasmagestützten Bearbeitung von Oberflächen planarer Substrate Apparatus for plasma-assisted processing of surfaces of planar substrates
03/16/2006DE102005043338A1 Lichtdurchlässiges Substrat für Maskenrohling und Maskenrohling The light transmissive substrate for mask blank and mask blank
03/16/2006DE102005038709A1 Wafer conveying apparatus used in semiconductor production line, has detachment prevention mechanism whose position is changed relative to wafer insertion channels, by operation of button in handle
03/16/2006DE102005037986A1 Nonvolatile memory device used for, e.g., digital cameras and mobile phones, has floating gate having trench structure, control gate formed inside trench structure, and gate insulating layer disposed between floating gate and control gate
03/16/2006DE102005037038A1 Verfahren zur Herstellung einer Gateleiterisolation A process for producing a gate conductor insulation
03/16/2006DE102005036517A1 Metallbondingverfahren Metallbondingverfahren
03/16/2006DE102005035083A1 Semiconductor device package connecting system, has two sets of bonding regions positioned along two guide lines and correspond to two sets of adjacent bonding pads at central region of die, respectively
03/16/2006DE102005035029A1 Halbleiterbauteil und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
03/16/2006DE102005034182A1 Halbleitervorrichtung und Herstellungsverfahren dafür A semiconductor device and manufacturing method thereof
03/16/2006DE102005033953A1 Waferteilungsverfahren und -vorrichtung Wafer dividing method and apparatus
03/16/2006DE102005031678A1 Integriertes Halbleiterschaltkreisbauelement, Kondensator und Herstellungsverfahren hierfür A semiconductor integrated circuit device, capacitor and manufacturing method thereof
03/16/2006DE102005030602A1 Semiconductor substrate drying apparatus, has control unit to control amount of dry gas supplied to process chamber based on measured density of dry gas, and gas supply pipe to supply dry gas to chamber
03/16/2006DE102005023469A1 Polierkissen, das Nuten aufweist, die konfiguriert sind, um Mischwirbel während eines Polierens zu fördern A polishing pad, comprising grooves that are configured to encourage mixing vortex during polishing
03/16/2006DE102005021190A1 Ein Verfahren zur Herstellung eines Flash-Speicherbauelements A method of manufacturing a flash memory device
03/16/2006DE102004060690A1 Transistor of semiconductor device comprises stack type gate, gate oxide film, and floating nitride films that are buried at gaps between gate oxide film formed on the semiconductor substrate and the gate oxide film formed on floating gate
03/16/2006DE102004044835A1 Integrierte Halbleiter-Kaskodenschaltung für Hochfrequenzanwendungen The semiconductor integrated cascode circuit for high-frequency applications
03/16/2006DE102004044709A1 Verfahren zur gleichzeitigen Rekristalisierung und Dotierung von Halbleiterschichten und nach diesem Verfahren hergestellte Halbleiterschichtsysteme Process for the simultaneous Rekristalisierung and doping of semiconductor layers and produced by this process semiconductor layer systems
03/16/2006DE102004044686A1 Integrierte Schaltungsanordnung mit Vias, die zwei Abschnitte haben, und Herstellungsverfahren An integrated circuit device with vias, which have two portions, and manufacturing processes
03/16/2006DE102004044678A1 Verfahren zum Herstellen eines Kondensators A method for manufacturing a capacitor
03/16/2006DE102004044667A1 Halbleiterbauelement sowie zugehöriges Herstellungsverfahren Semiconductor device and manufacturing method thereof
03/16/2006DE102004044444A1 Field-effect transistor semiconductor device production involves forming structured trench sidewalls
03/16/2006DE102004043858A1 Verfahren zur Herstellung einer Speicherzelle, einer Speicherzellenanordnung und Speicherzellenanordnung A method for fabricating a memory cell, a memory cell array and memory cell arrangement
03/16/2006DE102004042168A1 Halbleiterelement mit einem Metallisierungsschichtstapel mit kleinem ε mit erhöhter Widerstandsfähigkeit gegen Elektromigration Semiconductor element with a metallization layer with small ε with increased resistance to electromigration
03/16/2006DE102004041598A1 Semiconductor arrangement`s bending reducing method, involves desorbing vaporizable substances present in wiring carrier by temperature treatment before encasing and/or mounting of chips on carrier
03/16/2006DE102004039803A1 Production of conductor systems with high capacitive coupling comprises forming dielectric on substrate, forming trench structure and applying conductive layer and forming capacitor dielectric to produce conductor zone and capacitor zone
03/16/2006DE102004038573A1 Epitaxially growing thick tear-free group III nitride semiconductor layers used in the production of modern opto-electronic and electronic components comprises using an aluminum-containing group III nitride intermediate layer
03/16/2006DE102004038187A1 Production of semiconductors consisting of silicon wafer, electrical structure and contact on opposite side comprises producing contact feedthrough by forming isolation trenches around it and filling these with oxide
03/16/2006DE102004037817A1 Elektrisches Bauelement in Flip-Chip-Bauweise The electrical component in flip-chip-type
03/16/2006DE102004037610B3 Integrated circuit connection method e.g. for substrate and circuit assembly, involves planning flexible intermediate layer on integrated circuit and or substrate with flexible layer structured in raised and lower ranges
03/16/2006DE102004037089A1 Technik zur Herstellung einer Passivierungsschicht vor dem Abscheiden einer Barrierenschicht in einer Kupfermetallisierungsschicht Technology for the production of a passivation layer before depositing a barrier layer in a copper metallization
03/16/2006DE102004018249B3 Verfahren zum Bearbeiten eines Werkstücks an einem Werkstückträger A method for processing a workpiece on a workpiece carrier
03/16/2006DE10110707B4 Ferroelektrischer Speicher mit Referenzzellen-Auswahlschaltung und 2T1C-Speicherzellen A ferroelectric memory with reference cell selection circuit and 2T1C memory cells
03/15/2006EP1635625A2 Substrate manufacturing method and circuit board
03/15/2006EP1635454A1 Low-noise amplifier
03/15/2006EP1635407A1 Organic light emitting display with circuit measuring pad and method of fabricating the same
03/15/2006EP1635400A1 Field effect transistor
03/15/2006EP1635399A1 Lateral MOS device and method of making the same
03/15/2006EP1635396A1 Laminated semiconductor substrate and process for producing the same
03/15/2006EP1635395A2 Charge trapping semiconductor memory with charge trapping memory cells
03/15/2006EP1635394A1 Dc amplifier and semiconductor integrated circuit thereof
03/15/2006EP1635393A1 Switch capacitor circuit and semiconductor integrated circuit thereof
03/15/2006EP1635392A1 Limiter circuit and semiconductor integrated circuit thereof
03/15/2006EP1635391A2 Wireless chip and manufacturing method of the same
03/15/2006EP1635390A2 Substrate dividing method
03/15/2006EP1635389A1 SOI wafer and its manufacturing method
03/15/2006EP1635388A1 Dipolar electrostatic chuck
03/15/2006EP1635387A1 Electronic device with a chip on a pedestal and method of manufacturing the same
03/15/2006EP1635386A1 Method of removing molding residues from lead-frames
03/15/2006EP1635385A1 Mis transistor and cmos transistor
03/15/2006EP1635384A1 Method for manufacturing power diode and equipment for the same
03/15/2006EP1635383A2 Compound semiconductor device epitaxial growth substrate, semiconductor device, and manufacturing method thereof
03/15/2006EP1635381A2 Holder for very thin substrates
03/15/2006EP1635380A1 Cleaning and drying apparatus, wafer processing system and wafer processing method
03/15/2006EP1635374A1 Electron beam device, electron beam inspection method, electron beam inspection device, pattern inspection method and exposure condition determination method
03/15/2006EP1635217A1 Process for fabricating semiconductor device and method for generating mask pattern data
03/15/2006EP1634917A1 Hydroxy-amino thermally cured undercoat for 193 MN lithography
03/15/2006EP1634916A1 Hydroxy-amino thermally cured undercoat for 193 NM lithography
03/15/2006EP1634680A1 Vacuum clamping detection method and vacuum clamping detector
03/15/2006EP1634673A1 Method of producing laser-processed product and adhesive sheet, for laser processing used therefor
03/15/2006EP1634338A1 Semiconductor device having an edge termination structure and method of manufacture thereof
03/15/2006EP1634337A1 Termination structures for semiconductor devices and the manufacture thereof
03/15/2006EP1634336A1 Double-gate transistor with enhanced carrier mobility
03/15/2006EP1634334A1 Nanowhiskers with pn junctions and methods of fabricating thereof
03/15/2006EP1634333A2 STACKED 1T- i n /i MEMORY CELL STRUCTURE
03/15/2006EP1634328A2 Microelectromechanical systems, and methods for encapsulating and fabricating same
03/15/2006EP1634327A1 Soi shaped structure
03/15/2006EP1634326A2 Method for producing a ceramic/metal substrate
03/15/2006EP1634325A1 Formation of junctions and silicides with reduced thermal budget
03/15/2006EP1634324A1 Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy
03/15/2006EP1634323A2 Complex oxides for use in semiconductor devices and related methods
03/15/2006EP1634296A2 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
03/15/2006EP1634126A2 Developer composition for resists and method for formation of resist pattern
03/15/2006EP1633911A2 Method of forming a layer of silicon carbide on a silicon wafer
03/15/2006EP1633904A2 Methods for forming aluminum containing films utilizing amino aluminum precursors
03/15/2006EP1633902A2 Physical vapor deposition of titanium-based films
03/15/2006EP1633675A1 Method for producing highly pure solutions using gaseous hydrogen fluoride
03/15/2006EP1633673A2 Microelectromechanical systems having trench isolated contacts, and methods for fabricating same
03/15/2006EP1633660A2 Reduced movement wafer box
03/15/2006EP1633528A2 Substrate polishing apparatus
03/15/2006EP1633527A2 Vacuum-assisted pad conditioning system and method utilizing an apertured conditioning disk
03/15/2006EP1633513A1 Electronic component and its fabrication by selective laser sintering
03/15/2006EP1572833A4 Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal
03/15/2006EP1419357A4 Perimeter seal for backside cooling of substrates
03/15/2006EP1364231B1 A self-cleaning optic for extreme ultraviolet lithography
03/15/2006EP1334408B1 Photoresist stripper/cleaner compositions containing aromatic acid inhibitors
03/15/2006EP1322940A4 In-situ method and apparatus for end point detection in chemical mechanical polishing
03/15/2006EP1284806A4 Gas cabinet assembly comprising sorbent-based gas storage and delivery system
03/15/2006EP1141778B1 Novolac polymer planarization films with high temperature stability
03/15/2006EP1137054B1 Exposure system comprising a parallel link mechaniam and exposure method