| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 05/16/2006 | US7045840 Nonvolatile semiconductor memory device comprising a variable resistive element containing a perovskite-type crystal structure |
| 05/16/2006 | US7045839 Ferroelectric memory devices with improved ferroelectric properties and associated methods for fabricating such memory devices |
| 05/16/2006 | US7045837 Hardmask with high selectivity for Ir barriers for ferroelectric capacitor manufacturing |
| 05/16/2006 | US7045836 Semiconductor structure having a strained region and a method of fabricating same |
| 05/16/2006 | US7045835 High-density inter-die interconnect structure |
| 05/16/2006 | US7045834 Memory cell arrays |
| 05/16/2006 | US7045833 Avalanche photodiodes with an impact-ionization-engineered multiplication region |
| 05/16/2006 | US7045832 Vertical optical path structure for infrared photodetection |
| 05/16/2006 | US7045831 Semiconductor device |
| 05/16/2006 | US7045827 Lids for wafer-scale optoelectronic packages |
| 05/16/2006 | US7045825 Vertical cavity laser producing different color light |
| 05/16/2006 | US7045819 Semiconductor device and method for manufacturing the same |
| 05/16/2006 | US7045818 Semiconductor device and method of manufacturing the same comprising thin film containing low concentration of hydrogen |
| 05/16/2006 | US7045817 Structure of TFT electrode for preventing metal layer diffusion and manufacturing method therefor |
| 05/16/2006 | US7045816 Liquid crystal display apparatus |
| 05/16/2006 | US7045815 Semiconductor structure exhibiting reduced leakage current and method of fabricating same |
| 05/16/2006 | US7045814 OFET structures with both n- and p-type channels |
| 05/16/2006 | US7045813 Semiconductor device including a superlattice with regions defining a semiconductor junction |
| 05/16/2006 | US7045810 Monolithic multiple-wavelength laser device and method of fabricating the same |
| 05/16/2006 | US7045808 III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method |
| 05/16/2006 | US7045807 Field emission device, field emission display adopting the same and manufacturing method thereof |
| 05/16/2006 | US7045803 Missing die detection |
| 05/16/2006 | US7045801 Charged beam exposure apparatus having blanking aperture and basic figure aperture |
| 05/16/2006 | US7045800 Electron beam drawing apparatus |
| 05/16/2006 | US7045798 Characterizing an electron beam treatment apparatus |
| 05/16/2006 | US7045785 Method for manufacturing an infrared sensor device |
| 05/16/2006 | US7045747 Heater unit |
| 05/16/2006 | US7045746 Shadow-free shutter arrangement and method |
| 05/16/2006 | US7045582 Film forming; microstructure pattern; addition polymer; storage stability; reducing defects |
| 05/16/2006 | US7045562 Method and structure for self healing cracks in underfill material between an I/C chip and a substrate bonded together with solder balls |
| 05/16/2006 | US7045473 Solid material gasification method, thin film formation process and apparatus |
| 05/16/2006 | US7045472 Method and apparatus for selectively altering dielectric properties of localized semiconductor device regions |
| 05/16/2006 | US7045471 Method for forming resist pattern in reverse-tapered shape |
| 05/16/2006 | US7045470 Methods of making thin dielectric layers on substrates |
| 05/16/2006 | US7045469 Method of forming a buffer dielectric layer in a semiconductor device and a method of manufacturing a thin film transistor using the same |
| 05/16/2006 | US7045468 Isolated junction structure and method of manufacture |
| 05/16/2006 | US7045467 Method for determining endpoint of etch layer and etching process implementing said method in semiconductor element fabrication |
| 05/16/2006 | US7045466 Three dimensional high aspect ratio micromachining |
| 05/16/2006 | US7045465 Particle-removing method for a semiconductor device manufacturing apparatus |
| 05/16/2006 | US7045464 Via reactive ion etching process |
| 05/16/2006 | US7045463 Method of etching cavities having different aspect ratios |
| 05/16/2006 | US7045462 Method for fabricating a pattern and method for manufacturing a semiconductor device |
| 05/16/2006 | US7045461 reacting or mixing palladium (catalyst) with a silane-coupling agent; imidazole with glycidooxypropyltrimethoxysilane; electroless plating for powders, specular bodies, and resin fabrics |
| 05/16/2006 | US7045460 Method for fabricating a packaging substrate |
| 05/16/2006 | US7045459 Thin film encapsulation of MEMS devices |
| 05/16/2006 | US7045458 Semiconductor and method of manufacturing the same |
| 05/16/2006 | US7045457 Film forming material, film forming method, and silicide film |
| 05/16/2006 | US7045456 MOS transistor gates with thin lower metal silicide and methods for making the same |
| 05/16/2006 | US7045455 Via electromigration improvement by changing the via bottom geometric profile |
| 05/16/2006 | US7045454 Chemical mechanical planarization of conductive material |
| 05/16/2006 | US7045453 Very low effective dielectric constant interconnect structures and methods for fabricating the same |
| 05/16/2006 | US7045452 Circuit structures and methods of forming circuit structures with minimal dielectric constant layers |
| 05/16/2006 | US7045451 Preparation of group IVA and group VIA compounds |
| 05/16/2006 | US7045450 Method of manufacturing semiconductor device |
| 05/16/2006 | US7045449 Methods of forming semiconductor constructions |
| 05/16/2006 | US7045448 Semiconductor device and method of fabricating the same |
| 05/16/2006 | US7045447 Semiconductor device producing method and semiconductor device producing apparatus including forming an oxide layer and changing the impedance or potential to form an oxynitride |
| 05/16/2006 | US7045446 Semiconductor device fabrication method |
| 05/16/2006 | US7045445 Method for fabricating semiconductor device by using PECYCLE-CVD process |
| 05/16/2006 | US7045444 Method of manufacturing semiconductor device that includes selectively adding a noble gas element |
| 05/16/2006 | US7045443 Method for manufacturing semiconductor device, semiconductor device, circuit board, and electronic apparatus |
| 05/16/2006 | US7045442 Method of separating a release layer from a substrate comprising hydrogen diffusion |
| 05/16/2006 | US7045441 Method for forming a single-crystal silicon layer on a transparent substrate |
| 05/16/2006 | US7045440 Method of fabricating radio frequency microelectromechanical systems (MEMS) devices on low-temperature co-fired ceramic (LTCC) substrates |
| 05/16/2006 | US7045439 Methods of forming semiconductor constructions |
| 05/16/2006 | US7045438 Light emitting device, semiconductor device, and method of fabricating the devices |
| 05/16/2006 | US7045437 Method for fabricating shallow trenches |
| 05/16/2006 | US7045436 Method to engineer the inverse narrow width effect (INWE) in CMOS technology using shallow trench isolation (STI) |
| 05/16/2006 | US7045435 Shallow trench isolation method for a semiconductor wafer |
| 05/16/2006 | US7045434 Semiconductor device and method for manufacturing the same |
| 05/16/2006 | US7045433 Tip architecture with SPE for buffer and deep source/drain regions |
| 05/16/2006 | US7045432 Method for forming a semiconductor device with local semiconductor-on-insulator (SOI) |
| 05/16/2006 | US7045431 Method for integrating high-k dielectrics in transistor devices |
| 05/16/2006 | US7045430 Atomic layer-deposited LaAlO3 films for gate dielectrics |
| 05/16/2006 | US7045429 Method of manufacturing a semiconductor device |
| 05/16/2006 | US7045428 Method for making a semiconductor device with a high-k gate dielectric and a conductor that facilitates current flow across a P/N junction |
| 05/16/2006 | US7045427 Polysilicon gate doping level variation for reduced leakage current |
| 05/16/2006 | US7045426 Vertical type power MOSFET having trenched gate structure |
| 05/16/2006 | US7045425 Bird's beak-less or STI-less OTP EPROM |
| 05/16/2006 | US7045424 Method of fabricating local SONOS type gate structure and method of fabricating nonvolatile memory cell having the same |
| 05/16/2006 | US7045423 Non-volatile semiconductor memory device with multi-layer gate structure |
| 05/16/2006 | US7045422 Semiconductor gate structure and method for fabricating a semiconductor gate structure |
| 05/16/2006 | US7045421 Process for making bit selectable devices having elements made with nanotubes |
| 05/16/2006 | US7045420 Semiconductor device comprising capacitor and method of fabricating the same |
| 05/16/2006 | US7045419 Elimination of the fast-erase phenomena in flash memory |
| 05/16/2006 | US7045418 Semiconductor device including a dielectric layer having a gettering material located therein and a method of manufacture therefor |
| 05/16/2006 | US7045417 Method of manufacturing semiconductor device |
| 05/16/2006 | US7045416 Methods of manufacturing ferroelectric capacitors for integrated circuit memory devices |
| 05/16/2006 | US7045415 MIM capacitor having flat diffusion prevention films |
| 05/16/2006 | US7045414 Method of fabricating high voltage transistor |
| 05/16/2006 | US7045413 Method of manufacturing a semiconductor integrated circuit using a selective disposable spacer technique and semiconductor integrated circuit manufactured thereby |
| 05/16/2006 | US7045412 Field-effect type semiconductor device for power amplifier |
| 05/16/2006 | US7045411 Semiconductor device having a chain gate line structure and method for manufacturing the same |
| 05/16/2006 | US7045410 Method to design for or modulate the CMOS transistor threshold voltage using shallow trench isolation (STI) |
| 05/16/2006 | US7045409 Semiconductor device having active regions connected together by interconnect layer and method of manufacture thereof |
| 05/16/2006 | US7045408 Integrated circuit with improved channel stress properties and a method for making it |
| 05/16/2006 | US7045407 Amorphous etch stop for the anisotropic etching of substrates |
| 05/16/2006 | US7045406 Method of forming an electrode with adjusted work function |
| 05/16/2006 | US7045405 Semiconductor processing methods of forming integrated circuitry |
| 05/16/2006 | US7045404 Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |