Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
07/2007
07/12/2007US20070158765 Gallium lanthanide oxide films
07/12/2007US20070158764 Electronic device including a fin-type transistor structure and a process for forming the electronic device
07/12/2007US20070158763 Semiconductor transistors with expanded top portions of gates
07/12/2007US20070158762 Low-capacitance contact for long gate-length devices with small contacted pitch
07/12/2007US20070158760 Semiconductor device and method for fabricating the same
07/12/2007US20070158757 Structure of a field effect transistor having metallic silicide and manufacturing method thereof
07/12/2007US20070158753 Semiconductor device structure having low and high performance devices of same conductive type on same substrate
07/12/2007US20070158751 Semiconductor device and fabrication method thereof
07/12/2007US20070158747 SOI CMOS circuits with substrate bias
07/12/2007US20070158746 Semiconductor device having SOI substrate
07/12/2007US20070158745 Semiconductor device and manufacturing method thereof
07/12/2007US20070158740 Semiconductor device and manufacturing method of the semiconductor device
07/12/2007US20070158739 Higher performance CMOS on (110) wafers
07/12/2007US20070158737 Semiconductor device with mask read-only memory and method of fabricating the same
07/12/2007US20070158728 Buried plate structure for vertical dram devices
07/12/2007US20070158727 Semiconductor memory devices and methods of forming the same
07/12/2007US20070158717 Integrated circuit comb capacitor
07/12/2007US20070158716 Conductive memory stack with sidewall
07/12/2007US20070158712 Process for fabricating an integrated circuit comprising a photodiode, and corresponding integrated circuit
07/12/2007US20070158709 Image sensor with improved surface depletion
07/12/2007US20070158704 Semiconductor device and methods of fabricating the same
07/12/2007US20070158703 Electronic device and a process for forming the electronic device
07/12/2007US20070158700 Field effect transistor and method for producing the same
07/12/2007US20070158695 System with meshed power and signal buses on cell array
07/12/2007US20070158691 Semiconductor device having soi structure
07/12/2007US20070158690 Programmable Resistive RAM and Manufacturing Method
07/12/2007US20070158689 D/A conversion circuit and semiconductor device
07/12/2007US20070158688 Memory device and a method of forming a memory device
07/12/2007US20070158686 Igbt cathode design with improved safe operating area capability
07/12/2007US20070158684 Compound semiconductor, method of producing the same, and compound semiconductor device
07/12/2007US20070158682 Semiconductor device
07/12/2007US20070158669 Chip coated light emitting diode package and manufacturing method thereof
07/12/2007US20070158663 Apparatus and method for optical isolation
07/12/2007US20070158658 Methods of fabricating vertical jfet limited silicon carbide metal-oxide semiconductor field effect transistors
07/12/2007US20070158656 Display device and manufacture thereof
07/12/2007US20070158653 Silicon single crystal, a silicon wafer, an apparatus for producing the same, and a method for producing the same
07/12/2007US20070158651 Making organic thin film transistor array panels
07/12/2007US20070158642 Active electronic devices with nanowire composite components
07/12/2007US20070158639 Substrate-free light emitting diode and fabrication method thereof
07/12/2007US20070158636 Detecting and characterizing mask blank defects using angular distribution of scattered light
07/12/2007US20070158635 Semiconductor memory device and method for fabricating the same
07/12/2007US20070158591 Method and apparatus for processing a micro sample
07/12/2007US20070158577 Method and apparatus for generating laser produced plasma
07/12/2007US20070158564 Method and apparatus for processing a micro sample
07/12/2007US20070158387 Heater, reflow apparatus, and solder bump forming method and apparatus
07/12/2007US20070158315 Laser irradiation apparatus and laser irradiation method
07/12/2007US20070158309 Slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect and method for planarizing surface of semiconductor device using the same
07/12/2007US20070158308 Method for manufacturing single-side mirror surface wafer
07/12/2007US20070158307 Method for selective etching
07/12/2007US20070158306 Method of forming a metal line and method of manufacturing display substrate having the same
07/12/2007US20070158305 Apparatus and method for plasma treating a substrate
07/12/2007US20070158302 Systems and methods for gas assisted resist removal
07/12/2007US20070158031 Substrate adsorption device and substrate bonding device
07/12/2007US20070158027 Plasma treatment device
07/12/2007US20070158026 Processing apparatus
07/12/2007US20070158025 Gas switching section including valves having different flow coefficients for gas distribution system
07/12/2007US20070157947 Substrate drying apparatus and method of substrate drying using the same
07/12/2007US20070157884 Organosiloxane copolymer film, production method and deposition apparatus for said copolymer film, and semiconductor device using said copolymer film
07/12/2007US20070157882 Producing method of semiconductor device and substrate processing apparatus
07/12/2007US20070157524 Dispersion for the chemical-mechanical polishing of metal surfaces containing metal oxide particles and a cationic polymer
07/12/2007US20070157463 Method for gluing a circuit component to a circuit substrate
07/12/2007DE60121768T2 Verfahren zur herstellung eines halbleiterbauelements mit nitridzusammensetzung der gruppe iii A method for manufacturing a semiconductor device with nitride composition of the group iii
07/12/2007DE4442106B4 Verfahren zur Herstellung eines Transistors A method of manufacturing a transistor
07/12/2007DE4402247B4 Oberflächenreinigung mit Argon Surface cleaning with argon
07/12/2007DE4320780B4 Halbleiteranordnung und Verfahren zur Herstellung A semiconductor device and method for producing
07/12/2007DE19959565B4 Halbleiterbauelement und Entwurfsverfahren hierfür The semiconductor device design method therefor, and
07/12/2007DE19955471B4 Schaltung mit einer analogen Schaltung und einer Starter-Stromquellenvorrichtung sowie eine Verwendung einer Vorrichtung als automatisch abschaltende Starter-Stromquellenvorrichtung für eine analoge Schaltung Circuit having an analog circuit and a starter power source device, and a use of a device as automatically deactivating the starter power source device for an analog circuit
07/12/2007DE10344641B4 Signal-Test-Verfahren beim Test von Halbleiter-Bauelementen, sowie Test-Gerät Test signal in the test process of semiconductor devices, as well as test device
07/12/2007DE10339997B4 Träger für einen Wafer, Verfahren zum Herstellen eines Trägers und Verfahren zum Handhaben eines Wafers Carrier for a wafer, method for producing a support and method for handling of a wafer
07/12/2007DE10335816B4 Verfahren zur Justage eines Substrates vor der Durchführung eines Projektionsschrittes in einem Belichtungsgerät A process for the adjustment of a substrate prior to performing a step in a projection exposure apparatus
07/12/2007DE10260334B4 Fin-Feldeffektransitor-Speicherzelle, Fin-Feldeffekttransistor-Speicherzellen-Anordnung und Verfahren zum Herstellen einer Fin-Feldeffektransistor-Speicherzelle Fin-Feldeffektransitor memory cell, fin field effect transistor memory cell arrangement and method of fabricating a fin field effect transistor memory cell
07/12/2007DE102007001044A1 Elektronenstrahl-Bestrahlungssystem Electron beam exposure system
07/12/2007DE102006061174A1 Verfahren zum Herstellen eines Bipolartransistors A method for producing a bipolar transistor
07/12/2007DE102006061032A1 Verfahren zur Herstellung eines CMOS-Bildsensors A method for fabricating a CMOS image sensor
07/12/2007DE102006061026A1 CMOS-Bildsensor und Verfahren zu dessen Herstellung CMOS image sensor and method for its production
07/12/2007DE102006059427A1 Verfahren zum Ausbilden einer komprimierten Kanalschicht eines PMOS-Bauelements unter Verwendung eines Gateabstandshalters und ein durch selbiges hergestelltes PMOS-Bauelement A method of forming a compressed layer of a channel PMOS device using a gate spacer, and a polymer produced by selbiges PMOS device
07/12/2007DE102006059423A1 Struktur eines Halbleiterbauelements und Verfahren zu dessen Herstellung Structure of a semiconductor device and process for its preparation
07/12/2007DE102006059014A1 Halbleiteranordnungen und Verfahren zur Herstellung derselben Semiconductor devices and methods of manufacturing the same
07/12/2007DE102006059013A1 Halbleiteranordnung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
07/12/2007DE102006059002A1 Verfahren zum Herstellen einer integrierten Schaltung auf einem Halbleitersubstrat A method of fabricating an integrated circuit on a semiconductor substrate
07/12/2007DE102006019992A1 Semiconductor component, has polymer foam layer filling interspace between upper side of semiconductor chips and wiring structure of wiring substrate, where edge sides of chips and edge sides of layer are surrounded by housing in substrate
07/12/2007DE102006016276B3 Method for applying solder particles on to contact surfaces for forming electrical connection, involves taking solder particles through self-organization process on contact surfaces
07/12/2007DE102006009254B3 Verfahren zur Herstellung eines integrierten elektronischen Schaltkreises mit programmierbaren resistiven Zellen, entsprechende Zellen und Datenspeicher mit solchen A method for manufacturing an integrated electronic circuit with programmable resistive cells, cells and corresponding data storage with such
07/12/2007DE102006002428A1 Production of structured layers of transparent conducting oxides on semiconductor layers or carbon modifications used in opto-electronic components comprises structuring the semiconductor layer and sputtering the conducting oxide
07/12/2007DE102006000903A1 Thyristor for use as control thyristor in thyristor system, has lattice defect zone arranged between n-doped ignition stage emitter and n-doped base, and semiconductor body with crystal lattice defect seal, which is locally added in zone
07/12/2007DE102006000687A1 Kombination aus einem Träger und einem Wafer Combination of a support and a wafer
07/12/2007DE102005063258A1 Electrical contacts manufacturing method for e.g. dynamic random access memory cell, involves applying spacer layer on upper side wall region of conductors before arranging contacts, where spacer layer separates conductors from contacts
07/12/2007DE102005063130A1 Grabenisolationsstruktur mit unterschiedlicher Verspannung Grave isolation structure with different strain
07/12/2007DE102005063129A1 Grabenisolationsstruktur für ein Halbleiterbauelement mit reduzierter Seitenwandverspannung und Verfahren zur Herstellung desselben Of the same grave isolation structure for a semiconductor device with reduced side wall bracing and methods for making
07/12/2007DE102005063108A1 Technik zur Herstellung eines Isolationsgrabens als eine Spannungsquelle für die Verformungsverfahrenstechnik Technique for producing an isolation trench as a voltage source for the deformation process engineering
07/12/2007DE102005063089A1 Verfahren zum Reduzieren der Kontaminierung durch Vorsehen einer Ätzstoppschicht am Substratrand A method for reducing the contamination by providing an etch stop layer at the substrate edge
07/12/2007DE102005062976A1 Verfahren zur Herstellung von Halbleiter-Elementen und verfahrengemäß hergestelltes Halbleiter-Element A process for the production of semiconductor elements and semiconductor element produced in accordance with method
07/12/2007DE102005062917A1 Atomlagenabscheideverfahren Atomlagenabscheideverfahren
07/12/2007DE102005058704B3 Führungsbahn für elektronische Bauelemente Guideway for electronic components
07/12/2007DE102005025543B4 Halbleiterbaumodul und Verfahren zur Herstellung desselben Halbleiterbaumodul and method of manufacturing the same
07/12/2007DE102004021156B4 Flüssigkristalldisplay und Verfahren zu dessen Herstellung Liquid crystal display and method for its production
07/12/2007DE102004015276B4 Flüssigkristallanzeige, welche zum Anlegen eines horizontalen elektrischen Feldes ausgelegt ist, und Verfahren zu deren Herstellung A liquid crystal display, which is designed for applying a horizontal electric field, and processes for their preparation
07/12/2007DE10118422B4 Verfahren zur Herstellung einer strukturierten metallhaltigen Schicht auf einem Halbleiterwafer A method for producing a structured metal-containing layer on a semiconductor wafer
07/12/2007DE10056871B4 Feldeffekttransistor mit verbessertem Gatekontakt und Verfahren zur Herstellung desselben Of the same field effect transistor with an improved gate contact and methods for preparing
07/12/2007DE10054636B4 Halbleitervorrichtung Semiconductor device