Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
04/2008
04/24/2008US20080093667 Metal-oxide-semiconductor device having trenched diffusion region and method of forming same
04/24/2008US20080093666 Semiconductor Device and Manufacturing Method Thereof
04/24/2008US20080093665 Semiconductor apparatus and method of manufacturing the same
04/24/2008US20080093664 Memory device and method of manufacturing the same
04/24/2008US20080093663 Nonvolatile memory device and method for forming the same
04/24/2008US20080093661 Non-volatile memory device having a charge trapping layer and method for fabricating the same
04/24/2008US20080093660 Flash memory device and method for manufacturing the same
04/24/2008US20080093658 Method for Nitriding Tunnel Oxide Film, Method for Manufacturing Non-Volatile Memory Device, Non-Volatile Memory Device, Control Program and Computer-Readable Recording Medium
04/24/2008US20080093656 Semiconductor devices and methods of fabricating the same
04/24/2008US20080093655 Semiconductor device and method for forming the same
04/24/2008US20080093652 Semiconductor device and method of manufacturing same
04/24/2008US20080093651 Flash memory devices and methods for fabricating flash memory devices
04/24/2008US20080093650 Nonvolatile memory device and method of forming the same
04/24/2008US20080093648 Non-volatile memory devices including double diffused junction regions and methods of fabricating the same
04/24/2008US20080093644 DRAM Arrays, Vertical Transistor Structures, and Methods of Forming Transistor Structures and DRAM Arrays
04/24/2008US20080093643 Non-volatile memory device and fabrication method
04/24/2008US20080093642 Image sensor and fabricating method thereof
04/24/2008US20080093641 Method of manufacturing a multi-path lateral high-voltage field effect transistor
04/24/2008US20080093639 Method for forming gate insulating layer of mos transistor
04/24/2008US20080093637 Vertical junction field effect transistor with mesa termination and method of making the same
04/24/2008US20080093636 Scalable Process And Structure For JFET For Small And Decreasing Line Widths
04/24/2008US20080093635 Junction Fet and Method of Manufacturing the Same
04/24/2008US20080093631 Contact structure for semiconductor devices
04/24/2008US20080093630 Heterostructure Field Effect Transistor
04/24/2008US20080093628 Methods of Forming Semiconductor Devices Having Multiple Channel MOS Transistors and Related Intermediate Structures
04/24/2008US20080093623 Insulated gate semiconductor device and method for manufacturing same
04/24/2008US20080093622 Light-Emitter-Based Devices with Lattice-Mismatched Semiconductor Structures
04/24/2008US20080093617 Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same
04/24/2008US20080093611 Method for Production of a Radiation-Emitting Semiconductor Chip
04/24/2008US20080093609 Silicon Nitride Layer for Light Emitting Device, Light Emitting Device Using the Same, and Method of Forming Silicon Nitride Layer for Light Emitting Device
04/24/2008US20080093606 Light emitting chip package and manufacturing method thereof
04/24/2008US20080093605 Method for monolithically integrating silicon carbide microelectromechanical devices with electronic circuitry
04/24/2008US20080093603 Lower substrate, display apparatus having the same and method of manufacturing the same
04/24/2008US20080093602 Image display unit and method for manufacutre the same
04/24/2008US20080093601 multilayer of insulating layer pattern on the first single-crystalline layer, seed layer fills the opening and has a crystalline structure; vapor deposited silicon germanium, silicon carbide and/or silicon germanium carbon layer for prevent defects; semiconductors
04/24/2008US20080093600 Thin film transistor array panel and manufacturing method thereof
04/24/2008US20080093598 Substrate for display device, manufacturing method for same and display device
04/24/2008US20080093596 Semiconductor Device and Method of Fabricating the Same
04/24/2008US20080093595 Thin film transistor for cross point memory and method of manufacturing the same
04/24/2008US20080093591 Storage nodes, phase change memory devices, and methods of manufacturing the same
04/24/2008US20080093590 Phase change memory device and method of forming the same
04/24/2008US20080093560 Circuit Substrate and Method
04/24/2008US20080093464 Wireless Chip And Manufacturing Method Thereof
04/24/2008US20080093423 Low viscosity precursor compositions and methods for the deposition of conductive electronic features
04/24/2008US20080093422 Low viscosity precursor compositions and methods for the deposition of conductive electronic features
04/24/2008US20080093343 Method for treating the etching solution
04/24/2008US20080093341 RF Plasma Reactor Having a Distribution Chamber with at Least One Grid
04/24/2008US20080093340 Substrate processing method, substrate processing apparatus, and storage medium
04/24/2008US20080093338 Dry Etching Method And Dry Etching Apparatus
04/24/2008US20080093315 Support for Semiconductor Substrate
04/24/2008US20080093215 Batch-Type Remote Plasma Processing Apparatus
04/24/2008US20080093023 Semiconductor processing apparatus and method for using same
04/24/2008US20080093022 Method for sequencing substrates
04/24/2008US20080092991 Solder bumps formation using solder paste with shape retaining attribute
04/24/2008US20080092951 Method for Passivating Crystal Silicon Surfaces
04/24/2008US20080092938 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
04/24/2008US20080092921 Post metal chemical mechanical polishing dry cleaning
04/24/2008US20080092919 Method and device for removing coatings on a metal structure
04/24/2008US20080092818 Thermally zoned substrate holder assembly
04/24/2008US20080092812 Methods and Apparatuses for Depositing Uniform Layers
04/24/2008US20080092807 Transistor Production Using Semiconductor Printing Fluid
04/24/2008US20080092805 Substrate treating apparatus
04/24/2008US20080092714 Multilayer dicing blade
04/24/2008US20080092680 Substrate transfer apparatus and method of driving the same
04/24/2008US20080092376 Method for fabricating a printed circuit board
04/24/2008US20080092370 Electronic device handler for a bonding apparatus
04/24/2008US20080092353 Angled Elongated Features for Improved Alignment Process Integration
04/24/2008DE19943143B4 Halbleiterbauelement für hohe Sperrspannungen bei gleichzeitig niedrigem Einschaltwiderstand und Verfahren zu dessen Herstellung A semiconductor device for high blocking voltages with a low on-resistance and process for its preparation
04/24/2008DE112006000151T5 CMOS Transistsorübergangsbereiche, die durch ein CVD Ätzen gebildet sind und Ablagerungsabfolge CMOS Transistsorübergangsbereiche formed by a CVD etching and deposition sequence
04/24/2008DE10350751B4 Verfahren zum Herstellen eines vertikalen Feldeffekttransistors und Feldeffekt-Speichertransistor, insbesondere FLASH-Speichertransistor A method for producing a vertical field effect transistor and the field-effect transistor memory, in particular flash memory transistor
04/24/2008DE10328594B4 Halbleiterbauelement mit einer vergrabenen Brücke und Verfahren zur Herstellung eines Halbleiterbauelements mit einer vergrabenen Brücke A semiconductor device having a buried strap and method for producing a semiconductor device having a buried strap
04/24/2008DE10314151B4 Halbleiterbauelementeanordnung und Verfahren zur Kompensation parasitärer Ströme Semiconductor device assembly and method for compensating for parasitic currents
04/24/2008DE10296970B4 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
04/24/2008DE10242033B4 Ferroelektrische Speichervorrichtung und Verfahren zum Ausbilden derselben The ferroelectric memory device and method of forming same
04/24/2008DE10226363B4 Halbleiterbauelement Semiconductor device
04/24/2008DE10223748B4 Verfahren zum Ausbilden einer integrierten Speicherschaltungsanordnung A method of forming an integrated circuit memory array
04/24/2008DE10217698B4 Elektrische Schaltanordnung mit einem spritzgegossenen Schaltungsträger Electrical switching device with an injection molded circuit carrier
04/24/2008DE102007049553A1 Laserbearbeitungsverfahren für Galliumarsenid-wafer A laser processing method for gallium arsenide wafer
04/24/2008DE102007037638A1 Nichtflüchtige Speichervorrichtung mit einer Ladungseinfangschicht und Verfahren zur Herstellung derselben A non-volatile memory device comprising a charge-trapping layer and method of making same
04/24/2008DE102007028920A1 Feldeffekttransistor und Verfahren zur Herstellung desselben Field effect transistor and method of manufacturing the same
04/24/2008DE102007019561A1 Halbleitervorrichtung und Herstellungsverfahren derselben A semiconductor device and manufacturing method thereof
04/24/2008DE102006050361A1 Hartmaskenanordnung, Kontaktanordnung und Verfahren zur Strukturierung eines Substrats und zur Herstellung einer Kontaktanordnung Hard mask arrangement, contact arrangement and method for patterning a substrate and for producing a contact arrangement
04/24/2008DE102006049562A1 Substrate e.g. germanium substrate, manufacturing method for use in semiconductor module, involves sealing channel with material e.g. gold, and filling channel with electrically conductive material e.g. copper
04/24/2008DE102006049043A1 Semiconductor component i.e. MOSFET, has semiconductor body comprising p-doped body-zone and contact zone that is doped stronger than body zone and strongly n-doped source-zone arranged between front side of component and contact zone
04/24/2008DE102006048960A1 Insulation structure forming method for semiconductor component, has impressing two samples into hard mask for definition of opened end of respective trenches, and filling trenches with insulation material e.g. silicon oxide or polysilicon
04/24/2008DE102006046727A1 High frequency bipolar transistor component zones manufacturing method for voltage controlled oscillator, involves implanting substances in component areas to form cathode zone of varactor that extends in vertical direction until to zones
04/24/2008DE102006044530A1 Vorrichtung und Verfahren zur Strommessung bzw. Stromverstärkung Apparatus and method for power measurement or current gain
04/24/2008DE102005037566B4 Herstellungsverfahren für eine Halbleiterstruktur und entsprechende Halbleiterstruktur Manufacturing method of a semiconductor structure and corresponding semiconductor structure
04/24/2008CA2663325A1 Wet processing using a fluid meniscus, apparatus and method
04/24/2008CA2643439A1 Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices
04/23/2008EP1915041A1 Printed wiring board and printed wiring board manufacturing method
04/23/2008EP1915040A2 Printed wiring board and printed wiring board manufacturing method
04/23/2008EP1914814A1 Opto-electronic component with wireless contact
04/23/2008EP1914807A2 Method for producing semiconductor device
04/23/2008EP1914802A2 Method of producing thin film transistor substrate
04/23/2008EP1914801A1 DRAM manufacturing
04/23/2008EP1914800A1 Method of manufacturing a semiconductor device with multiple dielectrics
04/23/2008EP1914799A1 Method for manufacturing silicon on insulator
04/23/2008EP1914798A2 Semiconductor Mounting Substrate and Method for Manufacturing the Same
04/23/2008EP1914797A2 Method of manufacturing a lateral power mosfet