Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
07/2008
07/03/2008US20080157131 Method of forming a selective spacer in a semiconductor device
07/03/2008US20080157130 Expitaxial fabrication of fins for FinFET devices
07/03/2008US20080157128 Methods for producing multiple distinct transistors from a single semiconductor
07/03/2008US20080157123 Epitaxial group III nitride layer on (001)-oriented group IV semiconductor
07/03/2008US20080157122 Integrated semiconductor structure including a heterojunction bipolar transistor and a schottky diode
07/03/2008US20080157121 High speed high power nitride semiconductor device
07/03/2008US20080157118 Integrated circuit system employing strained technology
07/03/2008US20080157117 Insulated gate bipolar transistor with enhanced conductivity modulation
07/03/2008US20080157116 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same
07/03/2008US20080157111 Light-emitting devices
07/03/2008US20080157107 Light-emitting diode and method for manufacturing the same
07/03/2008US20080157106 Nitride semiconductor laser element
07/03/2008US20080157102 Semiconductor layered structure and its method of formation, and light emitting device
07/03/2008US20080157099 Organic light emitting display and fabricating method thereof
07/03/2008US20080157098 Semiconductor device and method of manufacturing the same
07/03/2008US20080157097 Light-emitting diode structure and method for manufacturing the same
07/03/2008US20080157095 Semiconductor Devices Having Single Crystalline Silicon Layers
07/03/2008US20080157094 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same
07/03/2008US20080157093 Capacitor having tapered cylindrical storage node and method for manufacturing the same
07/03/2008US20080157091 Methods of fabricating a semiconductor device using a cyclic selective epitaxial growth technique and semiconductor devices formed using the same
07/03/2008US20080157089 Semiconductor device and manufacturing method thereof
07/03/2008US20080157088 Thin film transistor array substrate and method for fabricating same
07/03/2008US20080157087 Image sensor and method for manufacturing the same
07/03/2008US20080157086 Method for manufacturing thin film transistor
07/03/2008US20080157085 Thin film transistor substrate and fabricating method thereof
07/03/2008US20080157083 Transistor, fabricating method thereof and flat panel display therewith
07/03/2008US20080157082 Organic light emitting display and method of manufacturing the same
07/03/2008US20080157081 Organic light emitting device and method for manufacturing the same
07/03/2008US20080157079 Boron phosphide-based semiconductor light-emitting device and production method thereof
07/03/2008US20080157078 Metrology Structure And Methods
07/03/2008US20080157077 Integrated Circuit and Methods of Measurement And Preparation of Measurement Structure
07/03/2008US20080157074 Method to measure ion beam angle
07/03/2008US20080157073 Integrated Transistor Devices
07/03/2008US20080157072 Memory device
07/03/2008US20080157061 Field effect transistor array using single wall carbon nano-tubes
07/03/2008US20080157058 Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures
07/03/2008US20080157050 Phase-change memory and fabrication method thereof
07/03/2008US20080157008 Laser irradiation apparatus and method of manufacturing semiconductor device
07/03/2008US20080156785 Temperature control for performing heat process on resist film
07/03/2008US20080156773 End point detection method applying resonance phenomenon, end point detection apparatus, chemical mechanical polishing apparatus on which the detection apparatus is loaded, and semiconductor device fabricated by the chemical mechanical polishing apparatus
07/03/2008US20080156772 Method and apparatus for wafer edge processing
07/03/2008US20080156689 Methods and apparatus for sensing substrates in carriers
07/03/2008US20080156641 System for driving and controlling a movable electrode assembly in an electrochemical process tool
07/03/2008US20080156445 Transfer assembly for manufacturing electronic devices
07/03/2008US20080156441 Plasma processing apparatus and electrode plate, electrode supporting body, and shield ring thereof
07/03/2008US20080156440 Surface processing apparatus
07/03/2008US20080155800 Method and apparatus for interconnecting electrodes with partial titanium coating
07/03/2008DE19515564B4 Elektrode für ein Halbleiterbauelement und Verfahren zur Herstellung derselben An electrode for a semiconductor device and method of manufacturing the same
07/03/2008DE112006002377T5 Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung A semiconductor device and method of manufacturing a semiconductor device
07/03/2008DE112006002263T5 Verfahren und Systeme zur Positionierung eines Laserstrahlflecks relativ zu einer integrierten Halbleiterschaltung unter Verwendung eines Bearbeitungsziels als Messtechnikziel Methods and systems for positioning a laser beam spot relative to a semiconductor integrated circuit using a processing target as objective measurement technique
07/03/2008DE112006002219T5 Halbleiteranordnung mit einer metallischen Gateelektrode, die auf einer getemperten dielektrischen Gateschicht mit hohem k-Wert gebildet ist A semiconductor device having a metal gate electrode that is formed on an annealed gate dielectric layer having a high k-value
07/03/2008DE112006002113T5 Folienklebeeinrichtung und Klebeverfahren Foil adhesive bonding method and device
07/03/2008DE112006002055T5 Verfahren zur Herstellung eines verspannten MOS-Bauelements A method for producing a stressed MOS device
07/03/2008DE10351005B4 Barrierenschicht mit einer Titannitridbeschichtung für eine Kupfermetallisierungsschicht, die ein Dielektrikum mit kleinem ε aufweist Barrier layer with a titanium nitride coating for a copper metallization, comprising a dielectric having a small ε
07/03/2008DE10339992B4 Verfahren zur Herstellung eines Strukturelements kritischer Abmessung bzw. einer Gateelektrode eines Feldeffekttransistors sowie Ätzsteuerung A process for producing a structural element of critical dimension or a gate electrode of a field effect transistor, and etching control
07/03/2008DE10309677B4 Mikroelektromechanisches Bauteil und Verfahren zur Herstellung eines mikroelektromechanischen Bauteils The micro-electro-mechanical component and process for producing a micro-electromechanical component
07/03/2008DE10302868B4 Verfahren zur Bestimmung von Strukturparametern einer Oberfläche mit einem lernfähigen System A method for determining structural parameters of a surface with an adaptive system
07/03/2008DE10258201B4 Verfahren für die Vergrößerung der Oberfläche in der Halbleiterfertigung Method for the enlargement of the surface in the semiconductor manufacturing
07/03/2008DE10211729B4 Verfahren zur Herstellung eines elektronischen Halbleiterbauteils A method for producing a semiconductor electronic component
07/03/2008DE102007063342A1 Package structure for semiconductor device e.g. complementary metal oxide semiconductor (CMOS) image sensor has secondary contact pad that is formed at the lower surface of the substrate and under the connecting through hole structure
07/03/2008DE102007063301A1 Radio frequency module package structure has substrate with die receiving perforations, conducting contacting connections and metallic perforations, where conducting disk is fixed under surface of substrate
07/03/2008DE102007060203A1 Double diffused metal oxide semiconductor element, has semiconductor substrate that has two transistor areas for higher and lower voltage
07/03/2008DE102007059337A1 Halbleiterkomponente mit Durchkontakten Semiconductor component with vias
07/03/2008DE102007059162A1 Mehrchip-Verpackung und Verfahren zu deren Herstellung A multi-chip packaging and processes for their preparation
07/03/2008DE102007058457A1 Prober for testing semiconductor substrates, has sealing ring that is connected to pressure generation device for inflation with at least two different pressures and is less deformable at higher pressure
07/03/2008DE102007057892A1 Wafer gripper, has guide for gripper jaw fastened to rotor that is supported rotatably about rotational axis of another rotor, where rotary drive of latter rotor is controlled or reversed in dependence of rotation of former rotor
07/03/2008DE102007057891A1 Wafer gripper has gripper jaw which is shifted in guidance by drive, where gripper jaw grips wafer, and rotating drive has low pressure driven impeller
07/03/2008DE102007051312A1 Device, particularly complimentary metal oxide semiconductor unit, comprises cooling element that is formed on lower substrate and image sensor is formed on cooling element
07/03/2008DE102007041191A1 Method for manufacturing metal oxide semiconductor field effect transistor-component of trench type of gate, involves forming trench in semiconductor substrate and gate oxide-coating at inner wall of trench
07/03/2008DE102007030321A1 Semiconductor component, particularly gate structure, has gate isolation layer, electrode on gate isolation layer, intermediate structure on electrode and another electrode on intermediate structure
07/03/2008DE102007014690B3 Method for producing semiconductor element, involves forming memory layer sequence on support, which has lower dielectric layer, charge trapping layer and upper dielectric layer
07/03/2008DE102006062289A1 Verfahren zur Herstellung eindimensionaler koaxialer Ge/SiCxNy-Heterostrukturen, derartige Struktur und Verwendung der Struktur A process for producing one-dimensional coaxial Ge / SiCx Ny heterostructures, such a structure and use of the structure
07/03/2008DE102006062036A1 Method for manufacturing of microstructure component, involves forming of material layer and another material layer by part of substrate, which is formed for manufacturing of microstructure component
07/03/2008DE102006062035A1 Method for removing of lacquer material after implantation with high dose in semiconductor component, involves carrying out of plasma enhanced etching process in oxygen and hydrogen-oxidic atmosphere for removing of lacquer mask material
07/03/2008DE102006062034A1 Chain structure for electromigration testing, has cable segment and another cable segment, which are formed in metallization layer that is formed by semiconductor substrate
07/03/2008DE102006062032A1 Method for protection of metal layer from external contamination, involves forming seed layer for connecting line structure in substrate of microstructure component
07/03/2008DE102006062017A1 Holding ring for chemical-mechanical polishing device, has polishing cushion side surface, and normal surface of border area and normal surface of polishing cushion side surface that has spikes angle
07/03/2008DE102006062015A1 Testing method for material layer in semiconductor structure on integrity for producing integrated circuit, involves producing semiconductor structure of structural element containing material, and layer that contains another material
07/03/2008DE102006062011A1 Field-effect transistor for poly-poly metal oxide semiconductor circuit, particularly for use with ohm source poly contact, has substrate that is formed with surface along trench, which has trench base and trench edge
07/03/2008DE102006061891A1 Composition for polishing surfaces, especially of semiconductors, comprises a lanthanide oxide abrasive, a polymeric dispersant, a polysaccharide gelling agent and water
07/03/2008DE102006060770A1 Herstellungsverfahren für eine integrierte Halbleiterstruktur und entsprechende Halbleiterstruktur Manufacturing method of an integrated semiconductor structure and corresponding semiconductor structure
07/03/2008DE102006055862B4 Verfahren und Vorrichtung zum Herstellen einer elektrischen Solarzellen-Kontaktstruktur an einem Substrat Method and apparatus for making an electrical contact structure of a solar cell substrate
07/03/2008DE102006049158B4 Transistor, Speicherzellenfeld und Verfahren zur Herstellung eines Transistors Transistor, memory cell array and method of manufacturing a transistor
07/03/2008DE102006019244B4 Nutzen und Halbleiterbauteil aus einer Verbundplatte mit Halbleiterchips und Kunststoffgehäusemasse sowie Verfahren zur Herstellung desselben The same benefits and semiconductor component of a composite plate with semiconductor chips and plastic housing composition and methods of making
07/03/2008DE102005007333B4 Mehrchip-Gehäuse mit seriellen Hochgeschwindigkeitskommunikationen zwischen Halbleiterformen Multi-chip package with high-speed serial communications between semiconductor forms
07/03/2008DE102004056970B4 Verfahren und Vorrichtung zum Erzeugen einer elektrischen Kontaktierung zwischen zwei Halbleiterstücken durch ein mechanisches Element Method and apparatus for generating an electrical contact between two semiconductor pieces by a mechanical element
07/03/2008DE102004021927B4 Verfahren zur inneren elektrischen Isolation eines Substrats für ein Leistungshalbleitermodul A process for the inner electrical insulation of a substrate for a power semiconductor module
07/03/2008DE10048477B4 Verfahren zum chemisch-mechanischen Polieren von Schichten aus Metallen der Platingruppe A method for chemical mechanical polishing of layers of metals of the platinum group
07/02/2008EP1940213A2 Cooling assembly with direct cooling of active electronic components
07/02/2008EP1939948A2 Method and apparatus for breaking semiconductor substrate, method for breaking solar cell and method for fabrication of solar cell module
07/02/2008EP1939945A2 Inverted metamorphic solar cell mounted on flexible film
07/02/2008EP1939942A2 Semiconductor device and method of fabricating the same
07/02/2008EP1939938A2 Semiconductor device, method of fabricating the same and copper leads
07/02/2008EP1939934A2 Nonvolatile memory device and method of fabricating the same
07/02/2008EP1939933A2 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same
07/02/2008EP1939932A1 A substrate comprising a stressed silicon germanium cleave layer
07/02/2008EP1939931A2 Method and apparatus for integrating metrology with etch processing
07/02/2008EP1939930A1 Article loading/unloading method and article loading/unloading device, exposure method and exposure apparatus, and method of manufacturing device
07/02/2008EP1939929A1 Solder layer, heat sink using such solder layer and method for manufacturing such heat sink
07/02/2008EP1939928A1 Nitride semiconductor device and method for manufacturing same