Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2009
10/29/2009US20090267180 Semiconductor device having a reduced fuse thickness and method for manufacturing the same
10/29/2009US20090267177 Semiconductor device and method of fabricating the same
10/29/2009US20090267176 A method for forming a multi-layer shallow trench isolation structure in a semiconductor device
10/29/2009US20090267175 Double patterning techniques and structures
10/29/2009US20090267174 Semiconductor device with a charge carrier compensation structure in a semiconductor body and method for its production
10/29/2009US20090267173 Semiconductor device and method for manufacturing semiconductor device
10/29/2009US20090267172 Method of manufacturing an image sensing micromodule
10/29/2009US20090267167 Dual-face fluid components
10/29/2009US20090267166 Method of manufacturing a device with a cavity
10/29/2009US20090267164 Method of manufacturing a semiconductor sensor device and semiconductor sensor device
10/29/2009US20090267162 Method of manufacturing semiconductor device and semiconductor device
10/29/2009US20090267161 Increasing body dopant uniformity in multi-gate transistor devices
10/29/2009US20090267160 Semiconductor device and method for manufacturing the same
10/29/2009US20090267158 Semiconductor device and manufacturing process therefor
10/29/2009US20090267157 Method or manufacturing a semiconductor device and semiconductor device obtained by using such a method
10/29/2009US20090267155 Semiconductor device and method for manufacturing the same
10/29/2009US20090267152 Semiconductor device and method of manufacturing a semiconductor device
10/29/2009US20090267151 Semiconductor device, electronic device, and manufacturing method thereof
10/29/2009US20090267150 Semiconductor Device and Method for Fabricating the Same
10/29/2009US20090267149 Source/drain junction for high performance mosfet formed by selective epi process
10/29/2009US20090267146 Structure and method for semiconductor power devices
10/29/2009US20090267145 Mosfet device having dual interlevel dielectric thickness and method of making same
10/29/2009US20090267144 Semiconductor device and method for manufacturing the same
10/29/2009US20090267143 Trenched mosfet with guard ring and channel stop
10/29/2009US20090267142 Semiconductor device and method of manufacturing same
10/29/2009US20090267141 Method for fabricating silicon carbide vertical mosfet devices
10/29/2009US20090267140 Mosfet structure with guard ring
10/29/2009US20090267138 Semiconductor device and method for manufacturing the same
10/29/2009US20090267136 Semiconductor memory device and method of manufacturing the same
10/29/2009US20090267135 Non-volatile semiconductor storage device and method of manufacturing the same
10/29/2009US20090267131 Nonvolatile semiconductor memory device and method of manufacturing the same
10/29/2009US20090267130 Structure and process integration for flash storage element and dual conductor complementary mosfets
10/29/2009US20090267127 Single Poly NVM Devices and Arrays
10/29/2009US20090267125 Semiconductor device and method of manufacturing the same
10/29/2009US20090267122 Semiconductor device and method of manufacturing the semiconductor device
10/29/2009US20090267119 Semiconductor device and method of manufacturing semiconductor device
10/29/2009US20090267118 Method for forming carbon silicon alloy (csa) and structures thereof
10/29/2009US20090267117 Enhanced stress for transistors
10/29/2009US20090267115 Club extension to a t-gate high electron mobility transistor
10/29/2009US20090267113 Semiconductor device and method of manufacturing the same
10/29/2009US20090267112 Semiconductor device and method of forming a semiconductor device
10/29/2009US20090267110 Integrated low leakage schottky diode
10/29/2009US20090267109 Compound semiconductor light-emitting device and method for manufacturing the same
10/29/2009US20090267108 Light emitting diode chip package and method of making the same
10/29/2009US20090267100 Nitride-based semiconductor device and method of manufacturing the same
10/29/2009US20090267097 Method of fabricating photoelectric device of group iii nitride semiconductor and structure thereof
10/29/2009US20090267096 Luminous devices, packages and systems containing the same, and fabricating methods thereof
10/29/2009US20090267087 Low resistance wiring structure and liquid crystal display device using the same
10/29/2009US20090267084 Integrated circuit with wireless connection
10/29/2009US20090267082 Semiconductor device and manufacturing method of the same
10/29/2009US20090267081 Semiconductor device and method for fabrication thereof
10/29/2009US20090267079 Externally configurable integrated circuits
10/29/2009US20090267078 Enhancement Mode III-N HEMTs
10/29/2009US20090267075 Oganic thin film transistor and pixel structure and method for manufacturing the same and display panel
10/29/2009US20090267074 Organic light emitting display device and method of manufacturing the same
10/29/2009US20090267073 Semiconductor Device and Method of Manufacturing the Same
10/29/2009US20090267072 Electro-optical device and method for manufacturing the same
10/29/2009US20090267071 Pixel layout structure for raising capability of detecting amorphous silicon residue defects and method for manufacturing the same
10/29/2009US20090267069 Semiconductor device and method for manufacturing the same
10/29/2009US20090267065 Semiconductor light emitting element and method for manufacturing the same
10/29/2009US20090267064 Semiconductor thin film and method for manufacturing same, and thin film transistor
10/29/2009US20090267055 Transistor, method for manufacturing same, and semiconductor device comprising such transistor
10/29/2009US20090267052 LAYER TRANSFER OF LOW DEFECT SiGe USING AN ETCH-BACK PROCESS
10/29/2009US20090267046 Memory structure with a programmable resistive element and its manufacturing process
10/29/2009US20090267045 Phase change memory device having heaters and method for manufacturing the same
10/29/2009US20090267044 Phase change memory device having a bent heater and method for manufacturing the same
10/29/2009US20090267042 Integrated Circuit and Method of Manufacturing an Integrated Circuit
10/29/2009US20090267021 Colloidal silica for semiconductor wafer polishing and production method thereof
10/29/2009US20090267020 Adjuvant for Controlling Polishing Selectivity and Chemical Mechanical Polishing Slurry
10/29/2009US20090266740 Wafer container with cushion sheet
10/29/2009US20090266596 Printed circuit board with embedded electronic components and methods for the same
10/29/2009US20090266588 Multilayer printed wiring board
10/29/2009US20090266487 Microwave introduction device
10/29/2009US20090266441 Board storage container and check valve
10/29/2009US20090266414 Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution
10/29/2009US20090266412 Solar Cell, Prefabricated Base Part for a Solar Cell and Method for Manufacturing Such a Base Part and a Solar Cell
10/29/2009US20090266409 Conductive compositions and processes for use in the manufacture of semiconductor devices
10/29/2009US20090266403 Solder replacement by conductive tape material
10/29/2009US20090266217 Sheet cutting device and cutting method
10/29/2009US20090266170 Pressure sensor, manufacturing method thereof, and electronic component provided therewith
10/29/2009DE19651550B4 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation
10/29/2009DE112007003169T5 Mikroelektronischer Chip mit Lötabdeckungen auf Verbindungsstellen und Verfahren zum Herstellen desselben The same microelectronic chip with Lötabdeckungen on joints and method of making
10/29/2009DE112007002784T5 Verfahren für die Züchtung einer mehrschichtigen Halbleiternitridheterostruktur Processes for the production of a multilayer Halbleiternitridheterostruktur
10/29/2009DE112007002571T5 Polierkopf und Poliervorrichtung Polishing head and polishing machine
10/29/2009DE102009017328A1 Integrierte MEMS-Vorrichtung und Steuerschaltung Integrated MEMS device and control circuit
10/29/2009DE102009016680A1 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
10/29/2009DE102009015722A1 Halbleitermodul Semiconductor module
10/29/2009DE102009012522A1 Halbleiteranordnung und Herstellungsverfahren A semiconductor device and manufacturing method
10/29/2009DE102008059984A1 Siliziumkarbid-Halbleitervorrichtung, welche eine Siliziumkarbid-Schicht enthält, und Verfahren zu deren Herstellung Silicon carbide semiconductor device containing a silicon carbide layer, and process for their preparation
10/29/2009DE102008046226A1 U-förmiger Zweibit-Speicheraufbau und Verfahren zu dessen Herstellung U-shaped two-bit storage structure and process for its preparation
10/29/2009DE102008030677A1 Method for use in diffusion device for workpiece diffusion treatment in evacuated reaction area, involves guiding reaction gas flow over heated workpiece surface area in external chamber, where inert gas flow is directed over heating device
10/29/2009DE102008024704A1 Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils The optoelectronic device and method for producing an optoelectronic component
10/29/2009DE102008022282A1 Einrichtung und Verfahren zur Behandlung von Silizium-Wafern oder flachen Gegenständen Apparatus and method for the treatment of silicon wafers or flat objects
10/29/2009DE102008019427A1 Method for diffusion treatment of workpiece, involves moving workpiece between sequent diffusion processes by transfer area arranged between reaction chambers
10/29/2009DE102008016512A1 Erhöhen der Verspannungsübertragungseffizienz in einem Transistor durch Verringern der Abstandshalterbreite während der Drain- und Source-Implantationssequenz Increasing the tension transmission efficiency in a transistor by reducing the spacer width during the drain and source implantation sequence
10/29/2009DE102008010297A1 Frequency conversion device for forming semiconductor laser device, has electric thermal resistor applied on upper surface of electric insulation support and provided between support and frequency conversion crystal
10/29/2009DE102008001414A1 Substrat-Schaltungsmodul mit Bauteilen in mehreren Kontaktierungsebenen Substrate circuit module with components in several contact-making
10/29/2009DE102008001413A1 Elektrische Leistungseinheit Electric power unit
10/29/2009DE102008001369A1 Method for manufacturing component, particularly condenser, coil or contacting element, involves producing substrate recess in substrate, and arranging u-shaped isolation layer in substrate recess
10/29/2009DE102006053982B4 Three dimensional carrier structure i.e. molded interconnect device, for electronic or optoelectronic assembly, has metal coating representing electromagnetic screening structure together with metal seed layer formed in carrier material
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