Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2009
12/31/2009US20090321795 Selective formation of dielectric etch stop layers
12/31/2009US20090321792 Separative extended gate field effect transistor based uric acid sensing device, system and method for forming thereof
12/31/2009US20090321790 Semiconductor device including memory cell and anti-fuse element
12/31/2009US20090321789 Triangle two dimensional complementary patterning of pillars
12/31/2009US20090321788 Dielectric ledge for high frequency devices
12/31/2009US20090321787 High voltage GaN-based heterojunction transistor structure and method of forming same
12/31/2009US20090321784 Semiconductor Device and Method of Forming Lateral Power MOSFET with Integrated Schottky Diode on Monolithic Substrate
12/31/2009US20090321781 Quantum dot device and method of making the same
12/31/2009US20090321778 Flip-chip light emitting diode and method for fabricating the same
12/31/2009US20090321774 Optical semiconductor device and method for manufacturing the same
12/31/2009US20090321760 Fabrication of compact opto-electronic component packages
12/31/2009US20090321754 Signal light using phosphor coated leds
12/31/2009US20090321752 Electric devices and methods of manufaturing the same
12/31/2009US20090321748 Light emitting diode and method for manufacturing the same
12/31/2009US20090321747 Multilayered semiconductor wafer and process for manufacturing the same
12/31/2009US20090321746 Silicon carbide semiconductor device and method for producing the same
12/31/2009US20090321744 Buffer layer for promoting electron mobility and thin film transistor having the same
12/31/2009US20090321740 Tft-lcd array substrate and manufacturing method thereof
12/31/2009US20090321739 Array substrate for flat display device and method for fabricating the same
12/31/2009US20090321735 Electrical Antifuse and Method of Programming
12/31/2009US20090321734 Capacitor-based method for determining and characterizing scribe seal integrity and integrity loss
12/31/2009US20090321733 Metal heterocyclic compounds for deposition of thin films
12/31/2009US20090321732 Thin film transistor, method of manufacturing the same and flat panel display device having the same
12/31/2009US20090321731 Thin film transistor, method of manufacturing the same and flat panel display device having the same
12/31/2009US20090321730 Compositions of doped, co-doped and tri-doped semiconductor materials
12/31/2009US20090321727 Organic transistor array, display device and method of fabricating display device
12/31/2009US20090321725 Organic el device and manufacturing method thereof
12/31/2009US20090321720 Systems and devices for quantum processor architectures
12/31/2009US20090321719 Novel material and process for integrated ion chip
12/31/2009US20090321717 Compositionally-graded quantum-well channels for semiconductor devices
12/31/2009US20090321714 Semiconductor light-emitting device
12/31/2009US20090321711 Nonvolatile memory element and manufacturing method thereof
12/31/2009US20090321707 Intersubstrate-dielectric nanolaminate layer for improved temperature stability of gate dielectric films
12/31/2009US20090321705 Phase change memory device and method for manufacturing the same
12/31/2009US20090321644 Bolometer and method of producing a bolometer
12/31/2009US20090321619 Optically controlled electrical-switch device based upon carbon nanotubes and electrical-switch system using the switch device
12/31/2009US20090321372 Low thermal mass semiconductor wafer support
12/31/2009US20090321306 Reduction of electric-field-induced damage in field-sensitive articles
12/31/2009US20090321116 Circuit connecting material, film-form circuit connecting material using the same, circuit member connecting structure and method of manufacturing the same
12/31/2009US20090321018 Peripherally engaging electrode carriers and assemblies incorporating the same
12/31/2009US20090321004 Method of transferring a laminate and method of manufacturing a semiconductor device
12/31/2009US20090320921 Photovoltaic Glazing Assembly and Method
12/31/2009US20090320917 Solar cell passivation and leveling
12/31/2009US20090320908 Photovoltaic module with drainage frame
12/31/2009US20090320884 Controls of ambient environment during wafer drying using proximity head
12/31/2009US20090320754 Integrated gas panel apparatus
12/31/2009US20090320746 Method for producing group iii-v compound semiconductor
12/31/2009US20090320606 Accessible stress-based electrostatic monitoring of chemical reactions and binding
12/31/2009US20090320571 A dispersion of nanostructured carbon in an organic solvent, comprising the diamide compound 2-R1,7-R2-perhydrocopyrine(2,7-naphthyridine) where R1 and R2 are independently selected from C1-C6 alkyl and phenyl; mobilizing; purity determination; analysis of electrical, optical and mechanical properties
12/31/2009DE19929684B4 Verfahren für die Ausbildung eines von einem Schmalkanaleffekt freien Transistors durch Verwendung einer in die Flachgrabenisolation eingebetteten, leitenden Abschirmung Method for the formation of a narrow channel effect of a free transistor by using a flat in the grave insulation embedded conductive shield
12/31/2009DE112008000601T5 MEMS Baugruppe, welche zumindest eine Öffnung aufweist, und ein Herstellungsverfahren für diese MEMS package having at least one opening, and a manufacturing method for this
12/31/2009DE112006001520B4 Prozess für die Herstellung erhabener Source- und Drain-Gebiete mit zu entfernenden Abstandshaltern, wobei "Mausohren" vermieden werden Process for forming raised source and drain regions with spacers to be removed, with "mouse ears" are avoided
12/31/2009DE112004002611B4 Amorpher Ätzstopp zum anisotropen Ätzen von Substraten Amorphous etch stop for the anisotropic etching of substrates
12/31/2009DE10362167B4 Sockel für eine Halbleitervorrichtung Base for a semiconductor device
12/31/2009DE10297225B4 Plättchenbefestigungsklebstoffe insbesondere für Halbleiteranwendungen Die attach adhesives, especially for semiconductor applications
12/31/2009DE102009030299A1 Fotomaskenherstellungsverfahren Photomask manufacturing process
12/31/2009DE102009023789A1 Speichervorrichtungen mit vertikalen Säulen und Verfahren zum Herstellen und Betreiben derselben Memory devices with vertical columns and methods of making and operating the same
12/31/2009DE102009022153A1 Halbleiterbauelement und Verfahren zum Herstellen desselben Of the same semiconductor device and method of manufacturing
12/31/2009DE102009021744A1 Verfahren zum Herstellen einer Speicherzellen-Anordnung A method for fabricating a memory cell arrangement
12/31/2009DE102009011880A1 Halbleitereinrichtung und Verfahren zum Herstellen einer Halbleitereinrichtung A semiconductor device and method of manufacturing a semiconductor device
12/31/2009DE102008030855A1 Verringern der Implantationsbeeinträchtigung in geneigten Implantationen durch Verschieben von Implantationsmasken Reduce the implantation damage in inclined implantations by moving implantation masks
12/31/2009DE102008030843A1 Opto-electronic arrangement, has adhesive unit arranged between connection support and chip and comprising of electrical conducting material, which provides electrical conducting connection between connection points and contact points
12/31/2009DE102008030826A1 Drahtsägevorrichtung A wire saw
12/31/2009DE102008030815A1 Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen A process for the production of a variety of optoelectronic devices
12/31/2009DE102008029107A1 Verfahren zur Herstellung einer Metallstruktur auf einer Oberfläche eines Halbleitersubstrates A process for producing a metal structure on a surface of a semiconductor substrate
12/31/2009DE102008017454A1 Leistungshalbleitermodul mit hermetisch dichter Schaltungsanordnung und Herstellungsverfahren hierzu Power semiconductor module with hermetically sealed circuit and manufacturing method therefor
12/31/2009DE102007053600B4 Verfahren zur Herstellung eines Metalls direkt auf einer leitenden Barrierenschicht durch elektrochemische Abscheidung unter Anwendung einer sauerstoffarmen Umgebung A process for the production of a metal directly onto a conductive barrier layer by electrochemical deposition using a low oxygen environment
12/31/2009DE102007030284B4 Verfahren zum Verpacken von Halbleiter-Bauelementen und verfahrensgemäß hergestelltes Zwischenprodukt A method of packaging of semiconductor devices and methods in accordance prepared intermediate
12/31/2009DE102005028996B4 Verfahren zum Anordnen eines elektronischen Bauteils in einer Ummantelung und Vorrichtung zum Fixieren eines elektronischen Bauteils in einer Ummantelung Method for arranging an electronic component in a sheath and a device for fixing an electronic component in a casing
12/31/2009DE102005022306B4 Verfahren zum Herstellen einer Halbleitervorrichtung mit einem Fin-Feldeffekttransistor (FinFET) A method of manufacturing a semiconductor device having a fin field effect transistor (FinFET)
12/31/2009DE102004060442B4 Verfahren zum Bilden einer Passivierungsschicht eines Halbleiterbauelements und Struktur einer Passivierungsschicht eines Halbleiterbauelements A method for forming a passivation film of a semiconductor device and a passivation layer structure of a semiconductor device
12/31/2009DE102004021260B4 Verfahren für eine erhöhte Badlebensdauer in einem Einzelbadplattierungsverfahren Methods for increased bath life in a Einzelbadplattierungsverfahren
12/31/2009DE102004001099B4 Oxidationsverfahren mit hochdichtem Plasma Oxidation process with high-density plasma
12/31/2009DE10030546B4 Befestigungsverfahren für elektronische Bauelemente Fixing method of electronic components
12/30/2009WO2009158552A1 Patterned integrated circuit and method of production thereof
12/30/2009WO2009158533A2 Wire on wire stitch bonding in a semiconductor device
12/30/2009WO2009158507A2 Chemical mechanical planarization pad conditioner and method of forming
12/30/2009WO2009158408A1 Method and apparatus for achieving low resistance contact to a metal based thin film solar cell
12/30/2009WO2009158378A2 Dual chamber megasonic cleaner
12/30/2009WO2009158236A2 Forming ultra low dielectric constant porous dielectric films and structures formed thereby
12/30/2009WO2009158193A2 Phase memorization for low leakage dielectric films
12/30/2009WO2009158192A2 Rf power delivery system in a semiconductor apparatus
12/30/2009WO2009158187A1 High efficiency photovoltaic cell and manufacturing method free of metal disulfide barrier material
12/30/2009WO2009158180A2 Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer
12/30/2009WO2009158169A1 Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performance
12/30/2009WO2009158117A2 Chemical modulation of electronic and magnetic properties of graphene
12/30/2009WO2009158057A1 Test interposer having active circuit component and method therefor
12/30/2009WO2009158039A1 Patterning processes comprising amplified patterns
12/30/2009WO2009157969A2 High porosity superabrasive resin products and method of manufacture
12/30/2009WO2009157958A1 Semiconductor with bottom-side wrap-around flange contact
12/30/2009WO2009157957A1 Semiconductor with top-side wrap-around flange contact
12/30/2009WO2009157930A1 Sandwich piezoelectric device with solid copper electrode
12/30/2009WO2009157870A1 Method for fabricating ganassb semiconductor
12/30/2009WO2009157747A1 Rfid tag encapsulation structure
12/30/2009WO2009157647A2 Non-contact type conveyor plate having a suction force
12/30/2009WO2009157574A1 Thin film transistor
12/30/2009WO2009157573A1 Thin film transistor, semiconductor device and electronic device
12/30/2009WO2009157535A1 Sputtering target for oxide semiconductor, comprising ingao3(zno) crystal phase and process for producing the sputtering target
12/30/2009WO2009157531A1 Semiconductor device, manufacturing method thereof, and display device using the semiconductor device
12/30/2009WO2009157514A1 Film deposition method
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