| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 02/04/2010 | US20100025653 Tunable wavelength light emitting diode |
| 02/04/2010 | US20100025623 Additive for polishing composition |
| 02/04/2010 | US20100025595 Electro-optical device |
| 02/04/2010 | US20100025571 Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
| 02/04/2010 | US20100025569 Solid-state imaging device, method of producing the same, and imaging device |
| 02/04/2010 | US20100025362 Method of Forming Capacitors |
| 02/04/2010 | US20100025287 Wafer Container with Constraints |
| 02/04/2010 | US20100025277 Thin plate storage transport system and reticle case using the same |
| 02/04/2010 | US20100024983 Plasma etching unit |
| 02/04/2010 | US20100024962 Composite stamper for imprint lithography |
| 02/04/2010 | US20100024957 Fixtures and methods for facilitating the fabrication of devices having thin film materials |
| 02/04/2010 | US20100024880 Solar cell and method for manufacturing the same |
| 02/04/2010 | US20100024872 Semiconductor layer manufacturing method, semiconductor layer manufacturing apparatus, and semiconductor device manufactured using such method and apparatus |
| 02/04/2010 | US20100024871 Photovoltaic device and method of manufacturing the same |
| 02/04/2010 | US20100024870 Structure And Method Of Solar Cell Efficiency Improvement By Strain Technology |
| 02/04/2010 | US20100024865 Continuous coating installation, methods for producing crystalline solar cells, and solar cell |
| 02/04/2010 | US20100024864 Solar cell, method of manufacturing the same, and solar cell module |
| 02/04/2010 | US20100024862 Substrate Provided with Transparent Conductive Film for Photoelectric Conversion Device, Method for Manufacturing the Substrate, and Photoelectric Conversion Device Using the Substrate |
| 02/04/2010 | DE112007003268T5 Verfahren zum Halbleiterpacken und/oder Halbleiterpackung A method for semiconductor packaging and / or semiconductor package |
| 02/04/2010 | DE10335101B4 Verfahren zur Herstellung einer Polysiliziumleitung mit einem Metallsilizidgebiet, das eine Linienbreitenreduzierung ermöglicht A process for preparing a polysilicon line having a metal silicide which enables a reduction in line width |
| 02/04/2010 | DE10330901B4 Elektrostatisches Fixierelement und Verfahren zu seiner Herstellung Electrostatic fixation element and process for its preparation |
| 02/04/2010 | DE10214620B4 Verfahren zur plasmalosen Gasphasenätzung eines Siliziumwafers und Vorrichtung zu deren Durchführung Method for plasma-free gas-phase etching of a silicon wafer and device for its implementation |
| 02/04/2010 | DE102009034950A1 Bildsensor und Verfahren zu dessen Herstellung Image sensor and method for its production |
| 02/04/2010 | DE102009034230A1 Frequenzeinstellvorrichtung Frequency setting |
| 02/04/2010 | DE102009033424A1 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation |
| 02/04/2010 | DE102009030958A1 Halbleiteranordnung mit einem Verbindungselement A semiconductor device comprising a connecting element |
| 02/04/2010 | DE102009030454A1 Waferbehandlungsverfahren Wafer processing method |
| 02/04/2010 | DE102008041059A1 Producing structurally processed/structurally coated surface of a substrate, comprises applying structured layer on the substrate in a shape corresponding to the negative image of the desired substrate surface, and processing the substrate |
| 02/04/2010 | DE102008040827A1 Method for manufacturing nano-scale transistor of electronic component in e.g. sensor element, involves applying dielectric layer on substrate after removal of nano-line, and applying conductive material layer to develop transistor |
| 02/04/2010 | DE102008035846A1 Method for production of semiconductor structures on silicon germanium base, involves bringing germanium ions in volume of single crystal silicon wafer by ion implantation with high dose |
| 02/04/2010 | DE102008035815A1 Verbessern der strukturellen Integrität und Definieren kritischer Abmessungen von Metallisierungssystemen von Halbleiterbauelementen unter Anwendung von ALD-Techniken Improving the structural integrity and defining critical dimensions of metallization of semiconductor components using ALD techniques |
| 02/04/2010 | DE102008035813A1 Durchlassstromeinstellung für Transistoren durch lokale Gateanpassung Forward current setting for transistors by gate local adaptation |
| 02/04/2010 | DE102008035808A1 Halbleiterbauelement mit einem Silizium/Germanium-Widerstand A semiconductor device comprising a silicon / germanium resistance |
| 02/04/2010 | DE102008035806A1 Transistor mit eingebettetem Si/GE-Material mit einem verbesserten Boreinschluss Transistor with embedded Si / GE material with improved Boreinschluss |
| 02/04/2010 | DE102008035522A1 Verfahren zur Herstellung einer Vorrichtung zur drahtlosen Kommunikation bzw. eines Prelaminats für eine solche Vorrichtung A method for producing a device for wireless communication or a prelaminate for such a device |
| 02/04/2010 | DE102008034789B4 Verfahren zum Herstellen einer Halbleitervorrichtung, Verfahren zum Herstellen einer SOI-Vorrichtung, Halbleitervorrichtung und SOI-Vorrichtung A method of manufacturing a semiconductor device, method for producing a SOI device, semiconductor device, and SOI device |
| 02/04/2010 | DE102008033395B3 Verfahren zur Herstellung eines Halbleiterbauelementes und Halbleiterbauelement A process for producing a semiconductor device and semiconductor device |
| 02/04/2010 | DE102008032127A1 Sol und Verfahren zur Herstellung einer Delafossit-Mischoxidschicht-Struktur auf einem Substrat sowie mit einem Mischoxid beschichtetes Substrat Sol and method for preparing a delafossite mixed oxide layer structure on a substrate and having a composite oxide coated substrate |
| 02/04/2010 | DE102008030847A1 Reduzierung der Kontamination von Halbleitersubstraten während der Aufbringung der Metallisierung durch Ausführen eines Abscheide/Ätzzyklus während der Barrierenabscheidung Reducing the contamination of semiconductor substrates during the deposition of the metallization by performing a deposition / etching cycle during barrier deposition |
| 02/04/2010 | DE102008029107B4 Verfahren zur Herstellung einer Metallstruktur auf einer Oberfläche eines Halbleitersubstrates A process for producing a metal structure on a surface of a semiconductor substrate |
| 02/04/2010 | DE102008021568B3 Verfahren zum Reduzieren der Erosion einer Metalldeckschicht während einer Kontaktlochstrukturierung in Halbleiterbauelementen und Halbleiterbauelement mit einem schützenden Material zum Reduzieren der Erosion der Metalldeckschicht A method for reducing erosion of a metal coating layer for a contact hole structure in semiconductor devices and semiconductor device having a protective material to reduce the erosion of the metal coating layer |
| 02/04/2010 | DE102008017454B4 Leistungshalbleitermodul mit hermetisch dichter Schaltungsanordnung und Herstellungsverfahren hierzu Power semiconductor module with hermetically sealed circuit and manufacturing method therefor |
| 02/04/2010 | DE102007017002B4 SiC-Halbleiteranordnung und Verfahren zum Herstellen derselben SiC semiconductor device and method of manufacturing the same |
| 02/04/2010 | DE102006054073B4 Vereinzelungsvorrichtung und Verfahren zum Vereinzeln eines Halbleitersubstrats Separating apparatus and method for singulating a semiconductor substrate |
| 02/04/2010 | DE102005006153B4 Verfahren zum Herstellen eines Feldeffekttransistors (FETs) A method of manufacturing a field effect transistor (FETs) |
| 02/04/2010 | DE102004047631B4 Verfahren zum Ausbilden einer Halbleiterstruktur in Form eines Feldeffekttransistors mit einem verspannten Kanalgebiet und Halbleiterstruktur A method of forming a semiconductor structure in the form of a field effect transistor with a strained channel region and the semiconductor structure |
| 02/04/2010 | DE102004021636B4 Halbleitervorrichtung mit selbstausgerichtetem vergrabenem Kontaktpaar und Verfahren zum Ausbilden desselben Of the same semiconductor device having a buried contact pair selbstausgerichtetem and method for forming |
| 02/04/2010 | DE10083372B4 Verfahren zum Untersuchen der Oberfläche von Halbleiterwafern A method of inspecting the surface of semiconductor wafers |
| 02/04/2010 | CA2730162A1 A lithographic process using a nanowire mask, and nanoscale devices fabricated using the process |
| 02/03/2010 | EP2149972A1 Alignment apparatus and exposure apparatus using the same |
| 02/03/2010 | EP2149917A2 Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices |
| 02/03/2010 | EP2149916A2 Method and appartus for self-doping negative and positive electrodes for silicon solar cells and other devices |
| 02/03/2010 | EP2149909A1 Semiconductor device and its manufacturing method |
| 02/03/2010 | EP2149908A1 Replacement metal gate transistors with reduced gate oxide leakage |
| 02/03/2010 | EP2149900A2 Dicing die-bonding film |
| 02/03/2010 | EP2149899A1 Etching method and etching apparatus |
| 02/03/2010 | EP2149898A1 Soi wafer manufacturing method |
| 02/03/2010 | EP2149150A1 Semiconductor device having tipless epitaxial source/drain regions |
| 02/03/2010 | EP2149148A1 Method for removing etching residues from semiconductor components |
| 02/03/2010 | EP2149147A1 Method for removing etching residues from semiconductor components |
| 02/03/2010 | EP2148937A1 Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases |
| 02/03/2010 | EP2148906A1 Dispersion comprising cerium oxide, sheet silicate and amino acid |
| 02/03/2010 | EP1397830B1 Method of manufacturing copper vias in low-k technology |
| 02/03/2010 | EP1356527B1 Bipolar transistor and method for producing the same |
| 02/03/2010 | EP1345703B1 Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof |
| 02/03/2010 | EP1155458B1 Field effect transistor arrangement with a trench gate electrode and an additional highly doped layer in the body region |
| 02/03/2010 | CN201397825Y Extension shaft |
| 02/03/2010 | CN201397823Y Turnover connection structure |
| 02/03/2010 | CN201397821Y Graphite carrying plate |
| 02/03/2010 | CN201397813Y Motion decoupling XY direction precision positioning platform |
| 02/03/2010 | CN201397812Y Sample wafer delivery device |
| 02/03/2010 | CN201397811Y Automatic feeding and receiving device |
| 02/03/2010 | CN201397810Y Vertical-type 360-degree integrated electronic improved structure |
| 02/03/2010 | CN201397809Y Adjustable multi-point floating bonding electrode |
| 02/03/2010 | CN201397808Y Rotary type vacuum lock |
| 02/03/2010 | CN201397807Y Pollution-free rotary work bench |
| 02/03/2010 | CN201397806Y Heater regulating device |
| 02/03/2010 | CN201397805Y Clamping and protecting device for single-side treatment |
| 02/03/2010 | CN201395509Y Stepwise micro-impression system |
| 02/03/2010 | CN201394838Y Suction device |
| 02/03/2010 | CN101641783A Silicon nitride film and nonvolatile semiconductor memory device |
| 02/03/2010 | CN101641782A Semiconductor device and process for producing the semiconductor device |
| 02/03/2010 | CN101641781A Semiconductor device and process for producing the same |
| 02/03/2010 | CN101641780A Semiconductor device and method for manufacturing the same |
| 02/03/2010 | CN101641779A Semiconductor device and its manufacturing method |
| 02/03/2010 | CN101641778A 半导体集成电路装置 The semiconductor integrated circuit device |
| 02/03/2010 | CN101641777A Semiconductor device and bias generating circuit |
| 02/03/2010 | CN101641776A 半导体器件 Semiconductor devices |
| 02/03/2010 | CN101641775A Improving the quality of a thin layer through high-temperature thermal annealing |
| 02/03/2010 | CN101641774A Process for manufacturing a composite substrate |
| 02/03/2010 | CN101641773A Adhesive film for semiconductor and semiconductor device made with the same |
| 02/03/2010 | CN101641772A On-chip memory cell and method of manufacturing same |
| 02/03/2010 | CN101641771A Semiconductor device and method for forming silicide layers |
| 02/03/2010 | CN101641770A Semiconductor device, and its manufacturing method |
| 02/03/2010 | CN101641769A Patterning method and method for fabricating electronic element |
| 02/03/2010 | CN101641768A Placing table structure and processing apparatus using the same |
| 02/03/2010 | CN101641767A Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device |
| 02/03/2010 | CN101641766A Adhesive film for semiconductor, composite sheet, and method for producing semiconductor chip using them |
| 02/03/2010 | CN101641765A Deposition system with electrically isolated pallet and anode assemblies |
| 02/03/2010 | CN101641764A Multi-step plasma doping with improved dose control |