Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
04/2010
04/20/2010US7700992 Semiconductor device
04/20/2010US7700986 Chip package carrier and fabrication method thereof
04/20/2010US7700982 Magnetoresistive effect element and magnetic memory device
04/20/2010US7700974 Process for fabricating ultra-low contact resistances in GaN-based devices
04/20/2010US7700973 GaN/AlGaN/GaN dispersion-free high electron mobility transistors
04/20/2010US7700957 Process for making contact with and housing integrated circuits
04/20/2010US7700951 Method and structure for forming strained Si for CMOS devices
04/20/2010US7700948 Thin film transistor array panel with common bars of different widths
04/20/2010US7700947 Semiconductor device
04/20/2010US7700946 Structure for reducing prior level edge interference with critical dimension measurement
04/20/2010US7700944 Semiconductor wafer, semiconductor chip, and semiconductor chip inspection method
04/20/2010US7700942 Semiconductor device including an embedded contact plug
04/20/2010US7700892 Sequential lateral solidification device and method of crystallizing silicon using the same
04/20/2010US7700534 Process for removing contaminant from a surface and composition useful therefor description
04/20/2010US7700532 Cleaning composition and method of cleaning therewith
04/20/2010US7700499 Multilayer silicon nitride deposition for a semiconductor device
04/20/2010US7700498 Self-repair and enhancement of nanostructures by liquification under guiding conditions
04/20/2010US7700497 Methods for fabricating residue-free contact openings
04/20/2010US7700496 Transistor having a metal nitride layer pattern, etchant and methods of forming the same
04/20/2010US7700495 Thin film transistor device and method of manufacturing the same, and liquid crystal display device
04/20/2010US7700494 Low-pressure removal of photoresist and etch residue
04/20/2010US7700493 Method for fabricating semiconductor device
04/20/2010US7700492 Plasma etching method and apparatus, control program and computer-readable storage medium storing the control program
04/20/2010US7700491 Stringer elimination in a BiCMOS process
04/20/2010US7700490 Semiconductor manufacturing method for removing residue generated by dry etching
04/20/2010US7700489 depositing a silica film on the substrate having formed thereon a wiring pattern, coating a SOG film on the silica film, and polishing the SOG film using a slurry containing cerium oxide and cationic surfactant with a chemical-mechanical polishing process; polishing selectivity
04/20/2010US7700488 Recycling of ion implantation monitor wafers
04/20/2010US7700487 Semiconductor device and manufacturing method of semiconductor device
04/20/2010US7700486 Oxide-like seasoning for dielectric low k films
04/20/2010US7700485 Electro- and electroless plating of metal in the manufacture of PCRAM devices
04/20/2010US7700484 Method and apparatus for a metallic dry-filling process
04/20/2010US7700483 Method for fabricating pixel structure
04/20/2010US7700482 Patterned material layer, method of forming the same, microdevice, and method of manufacturing the same
04/20/2010US7700481 Method for reliably removing excess metal during metal silicide formation
04/20/2010US7700480 Methods of titanium deposition
04/20/2010US7700479 Cleaning processes in the formation of integrated circuit interconnect structures
04/20/2010US7700478 Intermediate anneal for metal deposition
04/20/2010US7700477 Method for fabricating semiconductor device
04/20/2010US7700476 Solder joint reliability in microelectronic packaging
04/20/2010US7700475 Pillar structure on bump pad
04/20/2010US7700474 Barrier deposition using ionized physical vapor deposition (iPVD)
04/20/2010US7700473 Gated semiconductor device and method of fabricating same
04/20/2010US7700472 Method of forming a gate of a semiconductor device
04/20/2010US7700471 Methods of making semiconductor-based electronic devices on a wire and articles that can be made thereby
04/20/2010US7700470 Selective anisotropic wet etching of workfunction metal for semiconductor devices
04/20/2010US7700469 Methods of forming semiconductor constructions
04/20/2010US7700468 Semiconductor device and method of fabricating the same
04/20/2010US7700467 Methodology of implementing ultra high temperature (UHT) anneal in fabricating devices that contain sige
04/20/2010US7700466 Tunneling effect transistor with self-aligned gate
04/20/2010US7700465 Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage
04/20/2010US7700464 High-throughput printing of semiconductor precursor layer from nanoflake particles
04/20/2010US7700463 Method for manufacturing semiconductor device
04/20/2010US7700462 Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
04/20/2010US7700461 Methods of laterally forming single crystalline thin film regions from seed layers
04/20/2010US7700460 Semiconductor device fabrication method and electronic device fabrication method
04/20/2010US7700459 Method for producing electronic device and electronic device
04/20/2010US7700458 Integrated circuit package system employing wafer level chip scale packaging
04/20/2010US7700457 Method and zone for sealing between two microstructure substrates
04/20/2010US7700456 Semiconductor device and manufacturing method of the same
04/20/2010US7700455 Method for forming isolation structure in semiconductor device
04/20/2010US7700454 Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impurities
04/20/2010US7700453 Method for forming hyper-abrupt junction varactors
04/20/2010US7700451 Method of manufacturing a transistor
04/20/2010US7700450 Method for forming MOS transistor
04/20/2010US7700449 Forming ESD diodes and BJTs using FinFET compatible processes
04/20/2010US7700448 Manufacturing method of semiconductor device
04/20/2010US7700447 Method for making a semiconductor device comprising a lattice matching layer
04/20/2010US7700446 Virtual body-contacted trigate
04/20/2010US7700445 Method for fabricating multiple FETs of different types
04/20/2010US7700444 Post-lithography misalignment correction with shadow effect for multiple patterning
04/20/2010US7700442 Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the same
04/20/2010US7700441 Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates
04/20/2010US7700439 Silicided nonvolatile memory and method of making same
04/20/2010US7700438 MOS device with nano-crystal gate structure
04/20/2010US7700437 Non-volatile memory device with buried control gate and method of fabricating the same
04/20/2010US7700436 Method for forming a microelectronic structure having a conductive material and a fill material with a hardness of 0.04 GPA or higher within an aperture
04/20/2010US7700435 Method for fabricating deep trench DRAM array
04/20/2010US7700434 Trench widening without merging
04/20/2010US7700433 MIM type capacitor
04/20/2010US7700432 Method of fabricating a vertical transistor and capacitor
04/20/2010US7700431 Method for manufacturing a semiconductor device having polysilicon plugs
04/20/2010US7700430 Phase-changeable memory device and method of manufacturing the same
04/20/2010US7700429 Method for forming fin transistor
04/20/2010US7700428 Methods of fabricating a device structure for use as a memory cell in a non-volatile random access memory
04/20/2010US7700427 Integrated circuit having a Fin structure
04/20/2010US7700426 Nonvolatile memory device and method of forming the same
04/20/2010US7700425 Raised source drain mosfet with amorphous notched gate cap layer with notch sidewalls passivated and filled with dielectric plug
04/20/2010US7700424 Method of forming an embedded silicon carbon epitaxial layer
04/20/2010US7700423 Process for manufacturing epitaxial wafers for integrated devices on a common compound semiconductor III-V wafer
04/20/2010US7700422 Methods of forming memory arrays for increased bit density
04/20/2010US7700421 Semiconductor device and method for manufacturing the same
04/20/2010US7700420 Integrated circuit with different channel materials for P and N channel transistors and method therefor
04/20/2010US7700419 Insulated gate silicon nanowire transistor and method of manufacture
04/20/2010US7700418 Method for production of thin-film semiconductor device
04/20/2010US7700417 Methods for forming cascode current mirrors
04/20/2010US7700416 Tensile strained semiconductor on insulator using elastic edge relaxation and a sacrificial stressor layer
04/20/2010US7700415 Stacked bit line dual word line nonvolatile memory
04/20/2010US7700414 Method of making flip-chip package with underfill
04/20/2010US7700413 Production method of compound semiconductor light-emitting device wafer
04/20/2010US7700412 Chip package structure and the method thereof with adhering the chips to a frame and forming UBM layers
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