Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
06/2010
06/03/2010US20100133550 Stable power devices on low-angle off-cut silicon carbide crystals
06/03/2010US20100133549 Semiconductor Devices with Current Shifting Regions and Related Methods
06/03/2010US20100133548 Methods for improving the quality of epitaxially-grown semiconductor materials
06/03/2010US20100133546 System and Method for Manufacturing Thick and Thin Film Devices Using a Donee Layer Cleaved From a Crystalline Donor
06/03/2010US20100133544 Thin film transistor and fabricating method thereof
06/03/2010US20100133541 Thin film transistor array substrate, its manufacturing method, and liquid crystal display device
06/03/2010US20100133539 Thin-film transistor and method of manufacturing the same
06/03/2010US20100133538 Thin film transistor display panel and method of manufacturing the same
06/03/2010US20100133536 Microbolometer infrared detector elements and methods for forming same
06/03/2010US20100133534 Integrated circuit packaging system with interposer and flip chip and method of manufacture thereof
06/03/2010US20100133531 Semiconductor device and manufacturing method thereof
06/03/2010US20100133530 Semiconductor device and method for manufacturing the same
06/03/2010US20100133529 Thin light-emitting devices and fabrication methods
06/03/2010US20100133528 Capacitive gas sensor and method of fabricating the same
06/03/2010US20100133527 High efficiency lighting device and method for fabricating the same
06/03/2010US20100133525 Thin film transistor, display unit, and method of manufacturing thin film transistor
06/03/2010US20100133511 Integrated Circuits Based on Aligned Nanotubes
06/03/2010US20100133509 Semiconductor nanowire and its manufacturing method
06/03/2010US20100133506 Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor
06/03/2010US20100133505 Semiconductor light emitting device and fabrication method for the same
06/03/2010US20100133501 Switching element and method for manufacturing switching element
06/03/2010US20100133497 Semiconductor device and method for manufacturing the same
06/03/2010US20100133420 Solid-state imaging device, method of producing the same, and camera
06/03/2010US20100133349 Semiconductor package, method of manufacturing semiconductor package, electronic component, and method of manufacturing electronic component
06/03/2010US20100133232 Determining endpoint in a substrate process
06/03/2010US20100133231 Processing method and processing system
06/03/2010US20100132891 Valve and processing apparatus provided with the same
06/03/2010US20100132890 Plasma processing device and plasma discharge state monitoring device
06/03/2010US20100132888 Plasma Processing Apparatus
06/03/2010US20100132788 Pyrogenic zinc oxide-comprising composite of layers and field-effect transistor comprising this composite
06/03/2010US20100132772 Method for manufacturing nano-array electrode and photoelectric conversion device using same
06/03/2010US20100132766 Structural attachment of solar modules to frames by glazing
06/03/2010US20100132759 Cell isolation on photovoltaic modules for hot spot reduction
06/03/2010US20100132613 Fabrication of low dielectric constant insulating film
06/03/2010US20100132611 Substrate Processing System
06/03/2010US20100132507 Method for patterning metal using nanoparticle containing precursors
06/03/2010US20100132467 High-sensitivity z-axis vibration sensor and method of fabricating the same
06/03/2010CA2741673A1 Gluconic acid containing photoresist cleaning composition for multi-metal device processing
06/02/2010EP2192825A1 An injection tool for encapsulating electronic circuits with light sources, and related encapsulation process
06/02/2010EP2192631A1 Process for production of desubstituted compounds, organic semiconductor film and process for production of the film
06/02/2010EP2192625A1 Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element
06/02/2010EP2192624A1 Method For Growth Of GaN Single Crystal, Method For Preparation Of GaN Substrate, Process For producing GaN-Based Element, and GaN-Based Element
06/02/2010EP2192617A2 Quantum Semiconductor Device and Method for Fabricating the Same
06/02/2010EP2192616A2 Quantum semiconductor device and method for fabricating the same
06/02/2010EP2192613A1 Semiconductor device and its fabrication method
06/02/2010EP2192612A2 Method for stacking and interconnecting integrated circuits
06/02/2010EP2192611A1 Wafer processing tape
06/02/2010EP2192610A2 Processing method for uniformizing film thickness distribution of layer having predetermined film thickness formed on surface of silicon wafer and processing method for uniformizing thickness distribution of silicon wafer
06/02/2010EP2192609A1 Method of producing wafer for active layer
06/02/2010EP2192608A1 Substrate holding device
06/02/2010EP2192441A2 Active matrix substrate, method of manufacturing the same, and image sensor incorporation the same
06/02/2010EP2192211A1 Stable Power Devices on Low-Angle Off-Cut Silicon Carbide Crystals
06/02/2010EP2192167A1 Adhesive composition for electronic components and adhesive sheet for electronic components using the same
06/02/2010EP2192086A2 Apparatus and method for washing polycrystalline silicon
06/02/2010EP2191508A1 Liner for tungsten/silicon dioxide interface in memory
06/02/2010EP2191504A1 Dual gate oxide device integration
06/02/2010EP2191503A1 Method for producing a multiplicity of chips and correspondingly produced chip
06/02/2010EP2191502A1 Electronic system, and method for manufacturing a three-dimensional electronic system
06/02/2010EP2191501A1 Method for making a semi-conducting substrate located on an insulation layer
06/02/2010EP2191500A1 A mems package
06/02/2010EP2191499A2 Process for making doped zinc oxide
06/02/2010EP2191496A2 Improved solution deposition assembly
06/02/2010EP2191035A1 Deposition system for thin film formation
06/02/2010EP2190967A2 Composition and method for removing ion-implanted photoresist
06/02/2010EP2190947A1 Copper cmp composition containing ionic polyelectrolyte and method
06/02/2010EP1946379B1 Replacement metal gate transistors with reduced gate oxide leakage
06/02/2010EP1791164B1 Exposure equipment, exposure method and device manufacturing method
06/02/2010EP1738394B1 Method for reciprocating a workpiece through an ion beam
06/02/2010EP1570517B1 A method for depositing a metal layer on a semiconductor interconnect structure having a capping layer
06/02/2010EP1512168B1 Subpad having robust, sealed edges
06/02/2010DE19817310B4 Verfahren zur Herstellung von mikromechanischen Bauelementen A process for preparing micromechanical components
06/02/2010DE19654096B4 Verfahren zur Herstellung eines Halbleiterbauelementes A process for producing a semiconductor device
06/02/2010DE19649917B4 Verfahren zur Isolation von Halbleitereinrichtungen A process for the isolation of semiconductor devices
06/02/2010DE19641237B4 Halbleiterspeichervorrichtung A semiconductor memory device
06/02/2010DE112008001988T5 Wafer-Einspannvorrichtung für ein Plasmaverfahren Wafer-clamping device for a plasma process
06/02/2010DE10319497B4 Verfahren zur Herstellung eines SOI-Feldeffekttransistorelements mit einem ohmschen Substratkontakt A method for manufacturing an SOI field effect transistor element with an ohmic substrate contact
06/02/2010DE10203393B4 Halbleiterbauelement mit einem Halbleiterkörper auf der Basis eines Nitrid-Verbindungshalbleiters Semiconductor component having a semiconductor body on the basis of a nitride compound semiconductor,
06/02/2010DE102009048528A1 Gehäuse mit einem toleranzbehafteten elektronischen Bauteil Housing, with certain tolerances electronic component
06/02/2010DE102009044597A1 Halbleiter-Bauelement und Verfahren zur Herstellung desselben Of the same semiconductor device and methods for making
06/02/2010DE102009031657A1 Aufbau und Verfahren zum Ausbilden eines Trench-Fet mit abgeschirmtem Gate mit einem Zwischenelektroden-Dielektrikum mit einem Low-K-Dielektrikum darin Structure and method for forming a trench FET shielded gate with an inter-electrode dielectric with a low-K dielectric is
06/02/2010DE102009008032B4 Selbstmontage von Bauelementen Self-assembly of components
06/02/2010DE102008059648A1 Gateelektrodenstruktur mit großem ε, die nach der Transistorherstellung unter Anwendung eines Abstandshalters gebildet wird Gate electrode structure with large ε, which is formed after the transistor production using a spacer
06/02/2010DE102008059646A1 Mehr-Gatetransistor mit Stegen mit einer Länge, die durch die Gateelektrode definiert ist More gate transistor with webs having a length, which is defined by the gate electrode
06/02/2010DE102008059316A1 Arrangement for electronic component in housing made of plastic, comprises cover and lower piece, where cover is connected with lower piece
06/02/2010DE102008059314A1 Electronic component i.e. sensor, arrangement for use in e.g. vehicle application, has lower part, where direction of lid on lower part deviates from direction of connection of lower part with lid, and preset force lies on component region
06/02/2010DE102008059044A1 Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht A method of polishing a semiconductor wafer with a strained-relaxed Si1-xGex layer
06/02/2010DE102008057985A1 Method for loading and unloading susceptor for accommodating semiconductor wafer during e.g. heat treatment of wafer, involves placing wafer on handling tool, where distance between wafer and tool is two mm or smaller
06/02/2010DE102008044106A1 Method for applying bumps on substrate, involves providing substrate with surface layer, which has wetting layer and dewetting layer, and immersing partially substrate into molten mass made of bumping material
06/02/2010DE102008037613A1 Verfahren zur Herstellung eines Metallkontakts A process for producing a metal contact
06/02/2010DE102008016431B4 Metalldeckschicht mit erhöhtem Elektrodenpotential für kupferbasierte Metallgebiete in Halbleiterbauelementen sowie Verfahren zu ihrer Herstellung Metal coating layer with increased electrode potential for copper-based metal regions in semiconductor devices and methods for their preparation
06/02/2010DE102008011928B4 Verfahren zum Herstellen eines Halbleiterbauelements unter Verwendung einer Ätzstoppschicht mit geringerer Dicke zum Strukturieren eines dielektrischen Materials A method of manufacturing a semiconductor device using an etch stop layer with a smaller thickness to pattern a dielectric material
06/02/2010DE102008001173B9 Klassifizierungseinrichtung und -verfahren für die Klassifizierung von Oberflächendefekten, insbesondere aus Waferoberflächen Classification means and methods for the classification of surface defects, particularly from wafer surfaces
06/02/2010DE102006012645B4 Verfahren zum Verpacken von integrierten Schaltungen auf Waferniveau, zusammengesetzter Wafer und Packung auf Waferniveau A method of packaging integrated circuits at the wafer level, composite wafer, and wafer-level package
06/02/2010DE102005028640B4 Verfahren zur Herstellung eines Transistors Fin-FET mit einem Dreifachkanal in einem Speicherbauelement A process for producing a fin-FET transistor with a triple channel in a memory device
06/02/2010DE102004063959B4 Verfahren zur Herstellung einer niederohmigen Anschlusselektrode als vergrabene metallische Schicht in einem Halbleiterkörper für ein Halbleiterbauelement A process for preparing a low-ohmic connection electrode as a buried metallic layer in a semiconductor body for a semiconductor device
06/02/2010DE102004060961B4 Verfahren zur Herstellung eines Hybridhalbleitersubstrats über einer vergrabenen Isolierschicht A process for the preparation of a hybrid semiconductor substrate via a buried insulation layer
06/02/2010DE102004028991B4 Dünnschichttransistorarray-Substrat und Herstellverfahren für ein solches Thin film transistor array substrate and manufacturing method for such a
06/02/2010CN201498511U Vacuum clamping sucker of semiconductor wafer
06/02/2010CN201498510U High-reliability thick film hybrid integrated circuit bonding system
06/02/2010CN201498509U Loading clamp of small-size SMD product
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