Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
05/2011
05/26/2011US20110121424 Low oxygen content semiconductor material for surface enhanced photonic devices and associated methods
05/26/2011US20110121423 Concentric Ring Mask for Controlling The Shape of a Planar PN Junction
05/26/2011US20110121418 MRAM Cells Including Coupled Free Ferromagnetic Layers for Stabilization
05/26/2011US20110121417 Magnetic Tunnel Junction Device and Fabrication
05/26/2011US20110121416 Planar microshells for vacuum encapsulated devices and damascene method of manufacture
05/26/2011US20110121415 Planar microshells for vacuum encapsulated devices and damascene method of manufacture
05/26/2011US20110121414 Encapsulation, MEMS and Method of Selective Encapsulation
05/26/2011US20110121412 Planar microshells for vacuum encapsulated devices and damascene method of manufacture
05/26/2011US20110121409 Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor
05/26/2011US20110121408 Semiconductor device, method of manufacturing the same, and electronic device having the same
05/26/2011US20110121406 FinFETs with Different Fin Heights
05/26/2011US20110121404 Advanced transistors with punch through suppression
05/26/2011US20110121400 Method for making complementary p and n mosfet transistors, electronic device including such transistors, and processor including at least one such device
05/26/2011US20110121398 Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes
05/26/2011US20110121391 Method for manufacturing a suspended membrane and dual-gate mos transistor
05/26/2011US20110121387 Integrated guarded schottky diode compatible with trench-gate dmos, structure and method
05/26/2011US20110121386 Trench MOSFET with trenched floating gates as termination
05/26/2011US20110121382 Semiconductor device and a manufacturing method thereof
05/26/2011US20110121377 Reservoir capacitor of semiconductor device and method for fabricating the same
05/26/2011US20110121376 Dielectric Layers and Memory Cells Including Metal-Doped Alumina
05/26/2011US20110121374 Semiconductor device and method for manufacturing the same
05/26/2011US20110121372 EDRAM Architecture
05/26/2011US20110121370 Embedded stressor for semiconductor structures
05/26/2011US20110121364 Heterojunction bipolar transistor
05/26/2011US20110121361 Device for electrostatic discharge and method of manufacturing thereof
05/26/2011US20110121357 LED with Improved Injection Efficiency
05/26/2011US20110121354 Method for Producing an Electronic Component and Electronic Component
05/26/2011US20110121333 Solid State Light Emitting Apparatus with Thermal Management Structures and Methods of Manufacturing
05/26/2011US20110121325 Semiconductor device and method of fabricating same
05/26/2011US20110121318 Silicon Carbide Switching Devices Including P-Type Channels
05/26/2011US20110121317 Annealing method for semiconductor device with silicon carbide substrate and semiconductor device
05/26/2011US20110121315 Semiconductor device and manufacturing method thereof
05/26/2011US20110121311 Method for manufacturing semiconductor substrate, method for manufacturing semiconductor device, semiconductor substrate, and semiconductor device
05/26/2011US20110121309 Method of fabricating polysilicon layer, thin film transistor, organic light emitting diode display device including the same, and method of fabricating the same
05/26/2011US20110121308 Thin film transistor and manufacturing method thereof
05/26/2011US20110121306 Systems and Methods for Non-Periodic Pulse Sequential Lateral Solidification
05/26/2011US20110121305 Thin film transistor device and method of making the same
05/26/2011US20110121298 Manufacturing method of flexible semiconductor device
05/26/2011US20110121296 Thin film transistor compositions, and methods relating thereto
05/26/2011US20110121292 Calibration of temperature sensitive circuits with heater elements
05/26/2011US20110121290 Semiconductor Device and Manufacturing Method Thereof
05/26/2011US20110121283 Method for selective deposition and devices
05/26/2011US20110121282 Manufacturing method of organic electroluminescence element, light-emitting device, and display device
05/26/2011US20110121266 Quantum well mosfet channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
05/26/2011US20110121264 Composite structure of graphene and nanostructure and method of manufacturing the same
05/26/2011US20110121263 Coupled Asymmetric Quantum Confinement Structures
05/26/2011US20110121258 Rectifying antenna device with nanostructure diode
05/26/2011US20110121257 Growth of Single Crystal Nanowires
05/26/2011US20110121255 Integrated Memory Arrays, And Methods Of Forming Memory Arrays
05/26/2011US20110121254 Memory device and cbram memory with improved reliability
05/26/2011US20110121251 Single mask adder phase change memory element
05/26/2011US20110121250 High integration phase change memory device having reduced thickness phase change layer and fabrication method thereof
05/26/2011US20110121224 Polishing composition
05/26/2011US20110120758 Die mounting substrate and method of fabricating the same
05/26/2011US20110120653 Antenna for plasma processor and apparatus
05/26/2011US20110120652 Plasma generating apparatus
05/26/2011US20110120614 Thermosetting adhesive film, adhesive film with dicing film, and method of manufacturing semiconductor device using the thermosetting adhesive film or the adhesive film with dicing film
05/26/2011US20110120549 Thin film solar cell and manufacturing method threof, method for increasing carrier mobility in semiconductor device, and semiconductor device
05/26/2011US20110120519 Method of Manufacturing a Photovoltaic Cell
05/26/2011US20110120377 Remote plasma processing of interface surfaces
05/26/2011US20110120374 System and Method for Mitigating Oxide Growth in a Gate Dielectric
05/26/2011US20110120017 Variable seal pressure slit valve doors for semiconductor manufacturing equipment
05/26/2011DE212010000009U1 Auswechselbare obere Kammerteile einer Plasmaverarbeitungsvorrichtung Interchangeable upper chamber parts of a plasma processing apparatus
05/26/2011DE19900610B4 Herstellungsverfahren für ein Leistungshalbleiterbauelement mit halbisolierendem polykristallinem Silicium Manufacturing method for a power semiconductor component with semi-insulating polycrystalline silicon
05/26/2011DE112009001777T5 Betriebsüberwachungssystem für Bearbeitungsvorrichtung Operation monitoring system for machining device
05/26/2011DE10394263B4 Verfahren zur Herstellung einer integrierten Schaltung A method of fabricating an integrated circuit
05/26/2011DE10358036B4 Verfahren zum Charakterisieren einer Tiefenstruktur in einem Substrat A method for characterizing a deep structure in a substrate
05/26/2011DE10324585B4 Verfahren zum Ausbilden einer Kontaktstruktur für ein vertikales Gate, Vertikalgatekontaktstruktur und deren Verwendung in einem Transistor eines DRAM A method of forming a contact structure for a vertical gate, vertical gate contact structure and its use in a transistor of a DRAM
05/26/2011DE102010051851A1 Dünnschichttransistor-Zusammensetzungen und damit verbundene Verfahren Thin-film transistor compositions and related methods
05/26/2011DE102010051850A1 In Halbleiter-Packung-Anwendungen nützliche Interposerfilme und dazu in Beziehung stehende Verfahren In semiconductor packaging applications useful interposer movies and standing in relation to proceedings
05/26/2011DE102010049625A1 Waferebenen-Halbleiterbauelement-Verbinder The wafer-level semiconductor device connector
05/26/2011DE102010044196A1 Mikrobearbeitete Wandler und Verfahren der Herstellung The micromachined transducers and method of manufacture
05/26/2011DE102010042606A1 Method for manufacturing e.g. vertical insulated gate bipolar transistor, involves cutting section of layer such that specific percent width is less than specific value during stress distribution along edge section and region of section
05/26/2011DE102010022289A1 Vorrichtung und Verfahren zum Reinigen von Wafern II Apparatus and method for cleaning wafers II
05/26/2011DE102010011269A1 Verfahren zum Abscheiden einer für das Drahtbonden geeigneten Palladiumschicht auf Leiterbahnen einer Schaltungsträgerplatte und Palladiumbad zur Verwendung in dem Verfahren A method for depositing a position suitable for wire bonding palladium layer on conductor paths of a circuit board and palladium bath for use in the method
05/26/2011DE102009055685A1 Verfahren zur Qualitätsverbesserung von Wafern sowie Verwendung des Verfahrens A method for improving the quality of wafers as well as use of the method
05/26/2011DE102009054060A1 Vorrichtung und Verfahren zum Beschichten eines Substrates Apparatus and method for coating a substrate
05/26/2011DE102009053805A1 Siliziumschichten aus polymermodifizierten Flüssigsilan-Formulierungen Silicon layers of polymer modified Flüssigsilan formulations
05/26/2011DE102009053688A1 Screen-printable composition, useful for preparing conductive and transparent layer, comprises a screen printing medium, indium and tin compounds, which form indium tin oxide, and a low molecular weight hydrolyzable silicon compound
05/26/2011DE102009050178B3 Leistungshalbleitermodul mit einem eine dreidimensionale Oberflächenkontur aufweisenden Substrat sowie Herstellungsverfahren hierzu Power semiconductor module for this purpose with a three-dimensional surface contour containing substrate and manufacturing method
05/26/2011DE102009042886A1 Verfahren zur Herstellung einer Solarzelle oder eines Transistors mit einer kristallinen Silizium-Dünnschicht A method for manufacturing a solar cell, or a transistor having a crystalline silicon thin film
05/26/2011DE102009010883B4 Einstellen eines nicht-Siliziumanteils in einer Halbleiterlegierung während der FET-Transistorherstellung mittels eines Zwischenoxidationsprozesses Setting a non-silicon content in a semiconductor alloy, while the FET-transistor fabrication by means of an intermediate oxidation process
05/26/2011DE102008050495B4 Halbleitervorrichtung Semiconductor device
05/26/2011DE102008022733B4 Funktionseinheit und Verfahren zu deren Herstellung Functional unit and methods for their preparation
05/26/2011DE102007053862B4 Prober zum Testen von Halbleitersubstraten mit EMI-Abschirmung Prober for testing semiconductor substrates with EMI shielding
05/26/2011DE102007006706B4 Schaltungsanordnung mit Verbindungseinrichtung sowie Herstellungsverfahren hierzu Circuitry with coupling device and manufacturing method therefor
05/26/2011DE102006003102B4 Bipolartransistor und Herstellungsverfahren Bipolar transistor and manufacturing method
05/25/2011EP2326155A1 Substrate module and method for manufacturing the same
05/25/2011EP2325893A2 Low voltage bidirectional protection diode
05/25/2011EP2325892A2 LDMOS transistor and method of making the same
05/25/2011EP2325891A1 Silicon carbide semiconductor device and process for producing the silicon carbide semiconductor device
05/25/2011EP2325889A2 High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor
05/25/2011EP2325887A2 Photoelectric conversion device, and process for its fabrication
05/25/2011EP2325884A1 Schottky diode and method of manufacture
05/25/2011EP2325882A1 Method for manufacturing semiconductor device
05/25/2011EP2325878A1 Wafer-scale encapsulation process of electronic devices
05/25/2011EP2325877A2 Substrate mounting table of substrate processing apparatus
05/25/2011EP2325876A2 Epoxy resin formulations for underfill applications
05/25/2011EP2325875A1 Semiconductor device
05/25/2011EP2325874A1 Method of Forming a Transistor and Semiconductor Device