Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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04/11/2012 | CN102412250A 半导体封装结构、整合式无源元件及其制造方法 The semiconductor package structure, an integrated passive device and a method of manufacturing |
04/11/2012 | CN102412249A 降低闩锁效应的功率器件结构及其制造方法 Reduce power device structure and manufacturing method latchup |
04/11/2012 | CN102412248A Esd保护的功率mosfet或igbt及制备方法 Esd protected power mosfet or igbt and preparation methods |
04/11/2012 | CN102412241A Semiconductor chip encapsulating piece and manufacturing method thereof |
04/11/2012 | CN102412240A APD-TIA (Avalanche Photodiode-Transfer-Impedance Amplifier) coaxial photoelectric module with temperature control function and fabrication method thereof |
04/11/2012 | CN102412239A Semiconductor device and method of manufacturing same |
04/11/2012 | CN102412238A Integrated circuit package with reduced parasitic loop inductance |
04/11/2012 | CN102412233A 一种有效的测试浅沟槽隔离填充能力的测试结构 An effective test shallow trench isolation filling capacity test structure |
04/11/2012 | CN102412232A 一种短路缺陷测试装置和方法 One kind of short-circuit defect test device and method |
04/11/2012 | CN102412228A 同轴硅通孔互连结构及其制造方法 Coaxial silicon through-hole interconnection structure and manufacturing method |
04/11/2012 | CN102412225A Ball grid array semiconductor package and method of manufacturing the same |
04/11/2012 | CN102412221A High bond line thickness for semiconductor devices |
04/11/2012 | CN102412220A Semiconductor device and manufacturing method thereof |
04/11/2012 | CN102412219A Integrated circuit packaging system with active surface heat removal and method of manufacture thereof |
04/11/2012 | CN102412208A Chip-scale package and fabrication method thereof |
04/11/2012 | CN102412207A 电子可擦除可编程只读存储器单元 Electronically erasable programmable read-only memory cell |
04/11/2012 | CN102412206A Manufacture method of flash memory |
04/11/2012 | CN102412205A 在轻掺杂漏极离子植入中调节栅极侧壁层特征尺寸的工艺 The gate sidewall layer feature size adjustment process in lightly doped drain ion implantation |
04/11/2012 | CN102412204A 单晶体管dram及其制备方法 Single-transistor dram its preparation method |
04/11/2012 | CN102412203A 一种提高半导体器件应力记忆技术效果的方法 A way to improve the technical effect semiconductor device stress memorization methods |
04/11/2012 | CN102412202A 一种具有自对准空洞层的son互补型金属氧化物半导体制备方法 Son having complementary self-aligned layer of metal oxide semiconductor cavity preparation |
04/11/2012 | CN102412201A 一种在半导体器件中提高氮化硅薄膜拉应力的方法 A method for improving the tensile stress of the silicon nitride film in a semiconductor device |
04/11/2012 | CN102412200A 与锗硅异质结npn三极管集成的pnp三极管工艺实现方法 And SiGe heterojunction transistors npn pnp transistor integrated implementation process |
04/11/2012 | CN102412199A Thin-film circuit device and electronic apparatus |
04/11/2012 | CN102412198A 半导体器件制作方法 The semiconductor device fabrication method |
04/11/2012 | CN102412197A Semiconductor device and method of forming conductive tsv with insulating annular ring |
04/11/2012 | CN102412196A 金属铜大马士革互联结构的制造方法 The method of manufacturing copper interconnect structures in Damascus |
04/11/2012 | CN102412195A 硅通孔填充方法 TSV filling method |
04/11/2012 | CN102412194A 硅通孔的制作方法 TSV production methods |
04/11/2012 | CN102412193A 硅通孔填充方法 TSV filling method |
04/11/2012 | CN102412192A 一种用于金属互连侧壁修补的工艺方法 A metal interconnect the side walls for repair process for |
04/11/2012 | CN102412191A 可检测大马士革籽晶层和阻挡层的透射电镜样品制备方法 TEM sample preparation method can be detected Damascus seed layer and the barrier layer, |
04/11/2012 | CN102412190A 一种无光阻中毒碳化硅的前处理方法 A non-toxic silicon carbide resist pre-treatment method |
04/11/2012 | CN102412189A 一种减少光刻胶中毒的通孔介电阻挡层的制作方法 A method of reducing the production of photoresist poisoning through-hole of the dielectric barrier layer |
04/11/2012 | CN102412188A 一种超厚顶层金属的金属硬掩模双大马士革工艺 One kind of thick top metal metal hard mask dual damascene process |
04/11/2012 | CN102412187A 一种侧墙硬掩模接触孔/通孔刻蚀技术 One kind of hard mask sidewall contact hole / via etch technique |
04/11/2012 | CN102412186A 一种大尺寸通孔的制作方法 A method of making a large size of the through-hole |
04/11/2012 | CN102412185A 降低射频ldmos器件中源端接触柱电阻的方法 RF ldmos devices reduce contact resistance method source column |
04/11/2012 | CN102412184A Manufacture method of shallow trench isolation structure for adjusting stress of isolation oxide by ion implantation |
04/11/2012 | CN102412183A 提高半导体器件中空穴迁移率的方法 Enhance hole mobility in semiconductor devices approach |
04/11/2012 | CN102412182A 浅沟槽隔离结构形成方法 The method for forming a shallow trench isolation structure |
04/11/2012 | CN102412181A 浅沟槽隔离结构形成方法 The method for forming a shallow trench isolation structure |
04/11/2012 | CN102412180A 一种soi衬底和具有soi衬底的半导体器件及其形成方法 One kind of soi soi substrate and a semiconductor device having a substrate and method of forming |
04/11/2012 | CN102412179A Preparation method for epitaxial diode array isolated by double shallow trenches |
04/11/2012 | CN102412178A 芯片被动元件的制造工艺 Chip passive components manufacturing processes |
04/11/2012 | CN102412177A 晶圆传送系统和晶圆传送方法 Wafer transfer system and the wafer transfer method |
04/11/2012 | CN102412176A 托盘及具有其的晶片处理设备 Trays and a wafer processing apparatus having the same |
04/11/2012 | CN102412175A 一种石英舟 A silica boat |
04/11/2012 | CN102412174A 半导体晶片制造中的污染控制方法及装置 Semiconductor wafer manufacturing method and apparatus for pollution control |
04/11/2012 | CN102412173A 切割、研磨硅片表面清洗设备 Cutting, wafer polishing surface cleaning apparatus |
04/11/2012 | CN102412172A 切割、研磨硅片表面清洗方法 Cutting, wafer polishing surface cleaning method |
04/11/2012 | CN102412171A 一种用于封装设备的加热控制装置 A heating apparatus for packaging control device |
04/11/2012 | CN102412170A 多方向上反射的光源的采集系统和方法 Multi-party system and method for collecting light reflected upward of |
04/11/2012 | CN102412169A 一种具有温度自动控制功能的晶片加工机台 A kind of automatic temperature control function wafer processing machines |
04/11/2012 | CN102412168A 晶片缺陷的检测方法及系统 Wafer defect detection method and system |
04/11/2012 | CN102412167A Fixation for line joint |
04/11/2012 | CN102412166A 一种半导体封装在塑封前的表面纳米膜处理方法 A semiconductor plastic package on the surface of nano-film before treatment |
04/11/2012 | CN102412165A 集成电路钝化层的制造方法及结构 The method of manufacturing an integrated circuit and a passivation layer structure of |
04/11/2012 | CN102412164A Substrate laminating equipment and wheel disk stabilizing device thereof |
04/11/2012 | CN102412163A Multipurpose semiconductor bending mould |
04/11/2012 | CN102412162A 提高nldmos击穿电压的方法 Method to improve the breakdown voltage nldmos |
04/11/2012 | CN102412161A 一种提高共源极运算放大器频率特性的方法 A total of pole improve the frequency characteristics of the operational amplifier method source |
04/11/2012 | CN102412160A 一种提高共源极运算放大器频率特性的方法 A total of pole improve the frequency characteristics of the operational amplifier method source |
04/11/2012 | CN102412159A 形成umos晶体管和esd电路的方法 Umos esd circuit transistor and method of forming |
04/11/2012 | CN102412158A Method for forming contact holes on shallow trenches in order to enhance performance of semiconductor device |
04/11/2012 | CN102412157A 用于提高半导体器件性能的附加空置有源区填充方法 Improving the performance of the semiconductor device active areas filling vacant additional methods for |
04/11/2012 | CN102412156A 一种提高pmos器件中空穴迁移率的多晶硅栅附加样本填充方法 An enhanced hole mobility pmos device polysilicon gate additional sample filling method |
04/11/2012 | CN102412155A 隔离型ldmos的制造方法 Manufacturing method of isolated ldmos |
04/11/2012 | CN102412154A 改善射频ldmos器件工作频率的方法 Methods to improve the RF device operating frequency ldmos |
04/11/2012 | CN102412153A 降低射频ldmos器件中栅电阻的方法 RF ldmos devices reduce gate resistance method |
04/11/2012 | CN102412152A 具有漏极轻掺杂结构的金属氧化物半导体元件的制造方法 The method of manufacturing a light-doped drain structure having a metal oxide semiconductor device |
04/11/2012 | CN102412151A 结合超级结双面沟槽型igbt器件制造方法 Combined with super junction sided trench igbt device manufacturing method |
04/11/2012 | CN102412150A 锗硅异质结双极晶体管的制造方法 The method of manufacturing a silicon germanium heterojunction bipolar transistor |
04/11/2012 | CN102412149A 低噪声的锗硅异质结双极晶体管制作方法 Low noise silicon germanium heterojunction bipolar transistor fabrication method |
04/11/2012 | CN102412148A Igbt器件的制备方法 Preparation Igbt devices |
04/11/2012 | CN102412147A 场阻断型半导体器件的制作方法 Field-blocking method of making a semiconductor device |
04/11/2012 | CN102412146A 一种二极管的生产工艺 To a diode production process |
04/11/2012 | CN102412145A 在高深宽比图案上形成具有Si-N键的共形薄膜的方法 The method has the Si-N bonds are formed conformally on thin film pattern of high aspect ratio |
04/11/2012 | CN102412144A Plasma etching method, device thereof and plasma etching method for diffusion barrier layers |
04/11/2012 | CN102412143A 一种聚酰亚胺基底上覆阻挡层的铝垫制造工艺 Barrier layer overlying a polyimide substrate poly aluminum pad manufacturing process |
04/11/2012 | CN102412142A 一种超低介电常数薄膜及预防超低介电常数薄膜损伤的方法 An ultra-low dielectric constant film and method for ultra-low dielectric constant film Injury Prevention |
04/11/2012 | CN102412141A 一种去除深沟槽内氧化膜残留的方法 A method of removing deep trench oxide film residual method |
04/11/2012 | CN102412140A Non-uniformity reduction in semiconductor planarization |
04/11/2012 | CN102412139A 一种无定形碳硬掩模的等离子体刻蚀方法 An amorphous carbon hard mask in a plasma etching method |
04/11/2012 | CN102412138A 非现场情况下处理氮化硅膜以保证其高张应力的方法 The method of processing a silicon nitride film under field conditions to ensure their non-high-tensile stress |
04/11/2012 | CN102412137A 制作均匀的细微图案等离子体刻蚀方法 Produce a uniform pattern of plasma etching fine |
04/11/2012 | CN102412136A 一种消除金属表面突起物的化学机械抛光装置及方法 A chemical mechanical polishing apparatus and method for eliminating the metal surface protrusions |
04/11/2012 | CN102412135A Automated chemical mechanical polishing pilot run method and automated chemical mechanical polishing pilot run device |
04/11/2012 | CN102412134A 基板处理装置 The substrate processing apparatus |
04/11/2012 | CN102412133A 一种rf ldmos栅极金属硅化物形成的工艺方法 Rf ldmos one kind of process for forming the gate metal silicide |
04/11/2012 | CN102412132A 电子可擦除式只读存储器单元 Electronic erasable read-only memory unit |
04/11/2012 | CN102412131A Dielectric stack |
04/11/2012 | CN102412130A 利用栅多晶硅提高晶体管载流子迁移率的方法 Using the gate polysilicon improve the carrier mobility of the transistor Method |
04/11/2012 | CN102412129A 制作存储器的存储单元中顶电极的方法 Making the memory storage unit in the method of the top electrode |
04/11/2012 | CN102412128A Manufacturing methods of reversed trapeziform alternative gate and reversed trapeziform metal gate electrode |
04/11/2012 | CN102412127A “t”形金属栅电极的制作方法 Production Method "t" shaped metal gate electrode |
04/11/2012 | CN102412126A 超高压ldmos的工艺制作方法 The fabrication method EHV ldmos |
04/11/2012 | CN102412125A 一种制造高拉应力氮化硅薄膜的方法 A high tensile stress silicon nitride film method for manufacturing |
04/11/2012 | CN102412124A 新型衬底的生产方法、外延片及半导体器件 Producing new substrate wafer and semiconductor device |
04/11/2012 | CN102412123A 一种氮化铝的制备方法 A process for producing aluminum nitride |