Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
04/2012
04/26/2012US20120098048 Vertical memory devices and methods of manufacturing the same
04/26/2012US20120098047 Gettering agents in memory charge storage structures
04/26/2012US20120098045 Zero Temperature Coefficient Capacitor
04/26/2012US20120098043 Semiconductor device having metal gate and manufacturing method thereof
04/26/2012US20120098042 Semiconductor device with reduced junction leakage and an associated method of forming such a semiconductor device
04/26/2012US20120098041 Self-aligned body fully isolated device
04/26/2012US20120098039 Sige heterojunction bipolar transistor having low collector/base capacitance and manufacturing method of the same
04/26/2012US20120098037 Device having series-connected high electron mobility transistors and manufacturing method thereof
04/26/2012US20120098036 Group III-N HEMT with a Floating Substrate Region and a Grounded Substrate Region
04/26/2012US20120098035 Group III-N HEMT with an Increased Buffer Breakdown Voltage
04/26/2012US20120097986 Wafer level reflector for led packaging
04/26/2012US20120097980 Silicon carbide insulating gate type semiconductor device and fabrication method thereof
04/26/2012US20120097978 Photo-semiconductor device and method of manufacturing the same
04/26/2012US20120097977 Semiconductor device and a method for manufacturing a semiconductor device
04/26/2012US20120097974 Power semiconductor device
04/26/2012US20120097973 High performance power switch
04/26/2012US20120097971 Contiguous and virtually contiguous area expansion of semiconductor substrates
04/26/2012US20120097970 Atomic layer deposition encapsulation for power amplifiers in rf circuits
04/26/2012US20120097968 Multilayer substrate having gallium nitride layer and method for forming the same
04/26/2012US20120097966 Thin Film Transistor, Organic Light Emitting Diode (OLED) Display Including the Same, and Manufacturing Methods of Them
04/26/2012US20120097964 Semiconductor Device and Manufacturing Method Thereof
04/26/2012US20120097963 Semiconductor device and method of manufacturing the same
04/26/2012US20120097962 Polysilicon thin film transistor having copper bottom gate structure and method of making the same
04/26/2012US20120097961 Method of anodizing aluminum using a hard mask and semiconductor device thereof
04/26/2012US20120097960 Semiconductor device and manufacturing method thereof
04/26/2012US20120097953 Display apparatus and method of manufacturing the same
04/26/2012US20120097950 Semiconductor integrated circuit device and a method of fabricating the same
04/26/2012US20120097949 Vertical organic field effect transistor and method of its manufacture
04/26/2012US20120097942 Semiconductor device and method for manufacturing semiconductor device
04/26/2012US20120097923 Graphene device and method for manufacturing the same
04/26/2012US20120097918 Implanted current confinement structure to improve current spreading
04/26/2012US20120097915 Nonvolatile memory device and manufacturing method thereof
04/26/2012US20120097913 Integrated Circuitry Comprising Nonvolatile memory Cells And Methods Of Forming A Nonvolatile Memory Cell
04/26/2012US20120097638 Method For Low Temperature Bonding And Bonded Structure
04/26/2012US20120097331 Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes
04/26/2012US20120097330 Dual delivery chamber design
04/26/2012US20120097329 Stencils for High-Throughput Micron-Scale Etching of Substrates and Processes of Making and Using the Same
04/26/2012US20120097328 Apparatus for fabricating semiconductor wafers and apparatus for the deposition of materials by evaporation using a molecular beam
04/26/2012US20120097209 Fabrication of surface textures by ion implantation for antireflection of silicon crystals
04/26/2012US20120097208 Method for the production and series connection of strip-shaped elements on a substrate
04/26/2012US20120097204 Nanomesh phononic structures for low thermal conductivity and thermoelectric energy conversion materials
04/26/2012US20120097184 Method for recycling wafer
04/26/2012US20120097105 Molecular beam epitaxy apparatus for producing wafers of semiconductor material
04/26/2012US20120097095 Thermal Method to Control Underfill Flow in Semiconductor Devices
04/26/2012US20120097093 Load lock chamber, substrate processing system and method for venting
04/26/2012US20120096956 Photonic crystal pressure sensor
04/26/2012US20120096944 Device for measuring pressure, and method for manufacturing same
04/26/2012US20120096928 Method for manufacturing a sensor device of a gaseous substance of interest
04/26/2012DE112006001169B4 Verfahren zur Herstellung eines SOI-Bauelements A method of manufacturing an SOI-device
04/26/2012DE112006000840B4 Verfahren zur Herstellung einer Halbleiteranordnung sowie Verfahren zum Entwerfen einer Halbleiteranordnung A method of manufacturing a semiconductor arrangement and method for designing a semiconductor device
04/26/2012DE102011116354A1 Systeme und Verfahren zum Bilden eines zeitlich gemittelten Linienbildes Systems and methods for forming a line image time-averaged
04/26/2012DE102011113269A1 Halbleitermodul und Verfahren zu seiner Herstellung Semiconductor module and method for its preparation
04/26/2012DE102011100255B3 Verfahren zum Herstellen eines Halbleiterbauelements A method of manufacturing a semiconductor device
04/26/2012DE102011084956A1 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
04/26/2012DE102011084419A1 Vollständig isoliertes Bauelement mit selbstjustiertem Körpergebiet Fully insulated device having self-aligned body region
04/26/2012DE102011083041A1 Stützring zum Abstützen einer Halbleiterscheibe aus einkristallinem Silizium während einer Wärmebehandlung, Verfahren zur Wärmebehandlung einer solchen Halbleiterscheibe und wärmebehandelte Halbleiterscheibe aus einkristallinem Silizium Support ring for supporting a semiconductor wafer made of monocrystalline silicon during heat treatment method for heat treatment of such a semiconductor wafer and heat-treated semiconductor wafer made of monocrystalline silicon
04/26/2012DE102011082244A1 Waferbearbeitungsverfahren Wafer processing method
04/26/2012DE102011054784A1 Integrierte Schaltungstechnologie mit verschiedenen Bauelementepitaxialschichten Integrated circuit technology with various Bauelementepitaxialschichten
04/26/2012DE102011054749A1 Speichervorrichtung und Verfahren zum elektrischen Isolieren von Speicherzellen Memory device and method for electrically isolating memory cells
04/26/2012DE102011053099A1 Verfahren zum Füllen eines Kontaktlochs in einer Chip-Gehäuse-Anordnung und Chip-Gehäuse-Anordnungen A method of filling a contact hole in a chip package assembly and chip package assemblies
04/26/2012DE102011052952A1 Halbleiterbauelement und Verfahren, das eine Opferschicht verwendet A semiconductor device and method using a sacrificial layer
04/26/2012DE102011052523A1 Halbleiterstruktur und Verfahren zu deren Herstellung Semiconductor structure and process for their preparation
04/26/2012DE102011052489A1 Halbleiterstruktur und Verfahren zu deren Herstellung Semiconductor structure and process for their preparation
04/26/2012DE102011050055A1 Verfahren zum nasschemischen Ätzen einer Silziumschicht A method for wet chemical etching of a silicon layer
04/26/2012DE102011007596B3 Method for observing status of plasma chamber to control process of coating e.g. glass substrate, during semiconductor manufacturing process, involves supplying measurement signal into plasma chamber with measurement signal frequency
04/26/2012DE102010056098B3 Vorrichtung zur Charakterisierung von Materialparametern an Halbleitergrenzflächen mittels THz-Strahlung Apparatus for characterization of material parameters of semiconductor interfaces by means of THz radiation
04/26/2012DE102010049587A1 Verfahren zur elektrochemischen Wasserstoffpassivierung von Halbleiterschichten A method for electrochemical hydrogen passivation of semiconductor layers
04/26/2012DE102010042721A1 Ausgangswerkstoff einer Sinterverbindung und Verfahren zur Herstellung der Sinterverbindung Starting material compound and a sintering process for producing the sintered compound
04/26/2012DE102010042702A1 Ausgangswerkstoff einer Sinterverbindung und Verfahren zur Herstellung der Sinterverbindung Starting material compound and a sintering process for producing the sintered compound
04/26/2012DE102010002450B4 Transistoren mit Metallgateelektrodenstrukturen mit großem ε und angepassten Kanalhalbleitermaterialien Transistors with metal gate electrode structures with large ε and adjusted channel semiconductor materials
04/26/2012DE102010002412B4 Transistor mit vergrabener Metallgateelektrodenstruktur mit großem ε Transistor with buried metal gate electrode structure with large ε
04/26/2012DE102010001403B4 Austauschgateverfahren auf der Grundlage eines Umkehrabstandhalters, der vor der Abscheidung des Austrittsarbeitsmetalls aufgebracht wird Replacement gate process on the basis of a reversible spacer that is applied prior to the deposition of the work function metal
04/26/2012DE102009051521B4 Herstellung von Siliziumhalbleiterscheiben mit III-V-Schichtstrukturen für High Electron Mobility Transistoren (HEMT) und eine entsprechende Halbleiterschichtanordnung Production of silicon semiconductor wafers having III-V multilayer structures for high electron mobility transistors (HEMT) and a corresponding semiconductor layer assembly
04/26/2012DE102009047304B4 Leistungssteigerung in PFET-Transistoren mit einem Metallgatestapel mit großem ε durch Verbessern des Dotierstoffeinschlusses Performance improvement in PFET transistors with metal gate stack with large ε by improving the Dotierstoffeinschlusses
04/26/2012DE102009017306B4 Vorrichtung zum selektiven Übertragen einer mikrostrukturierten Komponente Means for selectively transmitting a microstructured component
04/26/2012DE102008011814B4 CMOS-Bauelement mit vergrabener isolierender Schicht und verformten Kanalgebieten sowie Verfahren zum Herstellen derselben CMOS device with a buried insulating layer and strained channel regions, and methods for manufacturing the same
04/26/2012DE102007041082B4 Integrierte Schaltung und zugehöriges Herstellungsverfahren zur Verringerung von Funkelrauschen Integrated circuit and manufacturing method thereof for reducing flicker noise
04/26/2012DE102006062862B4 Verfahren zum Herstellen von Feldeffekttransistoren mit vertikal ausgerichteten Gate-Elektroden A method of manufacturing field effect transistors having gate electrodes vertically aligned
04/26/2012DE102006062015B4 Verfahren zum Testen einer Materialschicht in einer Halbleiterstruktur auf Unversehrtheit A method of testing a material layer in a semiconductor structure for intactness
04/26/2012DE102005057075B4 Halbleiterbauelement mit einer Kupferlegierung als Barrierenschicht in einer Kupfermetallisierungsschicht und Verfahren zu dessen Herstellung A semiconductor device having a copper alloy as a barrier layer in a copper metallization and process for its preparation
04/26/2012DE102005054268B4 Verfahren zur Herstellung eines Halbleiterbauteils mit mindestens einem Halbleiterchip A process for producing a semiconductor device having at least one semiconductor chip
04/26/2012DE102005009020B4 Verfahren zur Erzeugung eines Leistungstransistors und damit erzeugbare integrierte Schaltungsanordnung A process for the production of a power transistor and therefore producible integrated circuit arrangement
04/26/2012DE10023834B4 Verfahren zur Schichtbildung und -strukturierung A method for layer formation and structuring
04/26/2012CA2814138A1 Moisture-proof insulating material
04/26/2012CA2812367A1 Parallellism conservation mechanism for nanopositioner
04/25/2012EP2445324A1 Electrode connection structure, conductive adhesive used therefor, and electronic device
04/25/2012EP2445323A1 Electrode connection method, electrode connection structure, conductive adhesive used therefor, and electronic device
04/25/2012EP2445321A1 Conductive circuits for a touch panel and the manufacturing method thereof
04/25/2012EP2445011A1 Semiconductor device
04/25/2012EP2445010A2 Asymetric layout structures for transistors and methods of fabricating the same
04/25/2012EP2445003A1 Apparatus for providing a rotation carrier magazine, and method of operating thereof
04/25/2012EP2445002A2 Apparatus and method for surface treatment in a furnace
04/25/2012EP2445001A2 Method and apparatus for separating protective tape
04/25/2012EP2445000A2 Process for realising a connecting structure
04/25/2012EP2444999A1 Semiconductor device
04/25/2012EP2444998A2 Method for manufacturing semiconductor device
04/25/2012EP2444997A1 Plasma processing apparatus and plasma processing method
04/25/2012EP2444996A1 Polishing liquid composition for silicon wafers
04/25/2012EP2444995A2 Wafer processing base
04/25/2012EP2444994A2 Wafer processing sheet
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