Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
04/2012
04/25/2012CN102428520A 非易失性存储器的两遍擦除 Erasing the nonvolatile memory twice
04/25/2012CN102426857A 应用于双边偏压非易失性存储器的方法与装置 Method and device is applied to a nonvolatile memory bilateral bias
04/25/2012CN101997001B 快闪存储器单元以及快闪存储器单元的操作方法 A flash memory cell and a method of operation of flash memory cells
04/25/2012CN101625893B 用于压缩存储单元阵列的带状接触孔方案 A memory cell array for compressing a contact hole strip solution
04/25/2012CN101501781B Memory structure and method of programming
04/25/2012CN101354912B 驱动相变存储设备的方法 Phase change memory device driving method
04/24/2012US8166371 Semiconductor memory system and signal processing system
04/24/2012US8164960 Write buffering systems for accessing multiple layers of memory in integrated circuits
04/24/2012US8164959 Method and system for programming non-volatile memory cells based on programming of proximate memory cells
04/24/2012US8164957 Reducing energy consumption when applying body bias to substrate having sets of nand strings
04/24/2012US8164956 Non-volatile semiconductor storage device
04/24/2012US8164953 Memory and boundary searching method thereof
04/24/2012US8164952 Nonvolatile memory device and related method of programming
04/24/2012US8164951 Method and apparatus for providing a non-volatile memory with reduced cell capacitive coupling
04/24/2012US8164950 Reduction of punch-through disturb during programming of a memory device
04/24/2012US8164656 Memory emulation in an image capture device
04/19/2012WO2011159705A3 Write and erase scheme for resistive memory device
04/19/2012US20120092933 Memory erase methods and devices
04/19/2012US20120092932 Programming methods and memories
04/19/2012US20120092931 Nonvolatile semiconductor memory device
04/19/2012US20120092930 Semiconductor storage device and method of reading data therefrom
04/19/2012US20120092929 Semiconductor memory device capable of increasing writing speed
04/19/2012US20120092928 Semiconductor memory device
04/19/2012US20120092927 Memory system
04/19/2012US20120092926 Three dimensional non-volatile memory device and method of manufacturing the same
04/19/2012DE112004002852B4 Nichtflüchtiger Halbleiterspeicher, Halbleitervorrichtung, Ladungspumpenschaltung und Pump-Verfahren A non-volatile semiconductor memory, semiconductor device, the charge pump circuit and pumping process
04/18/2012CN1870409B 用于产生高压的装置及其方法 Means for generating a high voltage and a method
04/18/2012CN1595527B Unified multilevel cell memory
04/18/2012CN102422362A 存储器装置中的多电平编程检验 Memory device multi-level programming test
04/18/2012CN102420014A 半导体存储设备 The semiconductor memory device
04/18/2012CN102420013A Semiconductor memory device
04/18/2012CN102420012A 检测半导体存储装置中的干扰存储单元的装置及方法 The semiconductor memory device of the detecting apparatus and method for a memory cell interference
04/18/2012CN101800077B 一种对闪存进行数据编程的方法和装置 A method and apparatus for data flash memory programming
04/18/2012CN101582295B 数据更新方法及系统 Method and system for updating data
04/18/2012CN101483067B 快闪存储器数据写入方法及其快闪存储器控制器 Flash memory data write method and the flash memory controller
04/18/2012CN101246743B 闪存接口 Flash Interface
04/18/2012CN101221812B 具有多页复录功能的闪存器件及相关的块替换方法 Flash memory device and related method has multiple pages block replacement dubbing function
04/17/2012US8161229 Flash memory architecture with separate storage of overhead and user data
04/17/2012US8159883 Semiconductor memory device having a block decoder for preventing disturbance from unselected memory blocks
04/17/2012US8159882 Nonvolatile semiconductor memory device and memory system
04/17/2012US8159880 NAND flash memory
04/17/2012US8159879 Reducing effects of program disturb in a memory device
04/17/2012US8159877 Method of directly reading output voltage to determine data stored in a non-volatile memory cell
04/17/2012US8159876 Non-volatile memory and method for power-saving multi-pass sensing
04/17/2012US8159875 Methods of storing multiple data-bits in a non-volatile memory cell
04/17/2012US8159874 Cell operation monitoring
04/17/2012US8159020 Non-volatile two transistor semiconductor memory cell and method for producing the same
04/12/2012WO2012047365A1 Circuit for concurrent read operation and method therefor
04/12/2012US20120087193 Flash multi-level threshold distribution scheme
04/12/2012US20120087192 Non-Volatile Memory Device with Program Current Clamp and Related Method
04/12/2012US20120087191 Symmetric, Differential Nonvolatile Memory Cell
04/12/2012US20120087190 Write BIAS condition for 2T-string NOR flash cell
04/12/2012US20120087189 Non-Volatile Memory Device
04/12/2012US20120087188 Structure and inhibited operation of flash memory with split gate
04/12/2012US20120087187 Method for Programming a Floating Gate
04/12/2012US20120086070 Fabrication method and structure of semiconductor non-volatile memory device
04/11/2012EP2439745A1 Combined EEPROM/flash non-volatile memory circuit
04/11/2012EP2438596A2 Memory erase methods and devices
04/11/2012EP2438595A1 Folding data stored in binary format into multi-state format within non-volatile memory devices
04/11/2012EP2127081B1 Clock mode determination in a memory system
04/11/2012CN202189558U 基于spi接口的数据存储装置 The data storage device based spi interface
04/11/2012CN102412207A 电子可擦除可编程只读存储器单元 Electronically erasable programmable read-only memory cell
04/11/2012CN102411992A Phase change memory state determination using threshold edge detection
04/11/2012CN102411991A 一种非挥发性存储器低压快速窄注入编程方法 A non-volatile memory quickly narrow low-pressure injection programming method
04/11/2012CN102411990A 一种位级双口非易失性静态随机存取存储器及其实现方法 A bit-level dual-port non-volatile static random access memory and its implementation
04/11/2012CN102411989A Semiconductor integrated circuit and method of controlling memory
04/11/2012CN102411988A 半导体存储装置 The semiconductor memory device
04/11/2012CN102411987A 存储器件及其自交织方法 Self-interleaving memory device and method
04/11/2012CN101504629B Flash controller cache architecture
04/11/2012CN101416253B 减少编程干扰的影响 Reduce the impact of interference programming
04/11/2012CN101409105B 快闪存储设备 Flash memory device
04/11/2012CN101385088B 多电平单元非易失性存储器装置中的单锁存器数据电路 A non-volatile multi-level cell memory device in the single data latch circuit
04/11/2012CN101223640B 高密度“与非”非易失性存储器装置 High density "and not" non-volatile memory device
04/11/2012CN101199022B 补偿非易失性存储设备中浮动栅极之间耦合的方法及系统 Compensation for the non-volatile memory device method and system for coupling between the floating gate
04/10/2012US8156280 Data protection for non-volatile semiconductor memory using block protection
04/10/2012US8154933 Mode-register reading controller and semiconductor memory device
04/10/2012US8154930 Semiconductor memory device which stores plural data in a cell
04/10/2012US8154928 Integrated flash memory systems and methods for load compensation
04/10/2012US8154927 Nonvolatile memory device and nonvolatile memory system employing same
04/10/2012US8154926 Memory cell programming
04/10/2012US8154925 Semiconductor memory device and system capable of executing an interleave programming for a plurality of memory chips and a 2-plane programming at the respective memory chips
04/10/2012US8154922 Semiconductor memory device
04/10/2012US8154921 Dynamic and adaptive optimization of read compare levels based on memory cell threshold voltage distribution
04/10/2012US8154920 Method of reading data and method of inputting and outputting data in non-volatile memory device
04/10/2012US8154919 Method of reading nonvolatile memory device and nonvolatile memory device for implementing the method
04/05/2012WO2012044965A1 Memory arrays and methods of operating memory
04/05/2012WO2012044711A1 Multi-step channel boosting to reduce channel-to-floating gate coupling in memory
04/05/2012WO2012044635A2 Sensing for nand memory based on word line position
04/05/2012WO2012044424A1 High voltage switch suitable for use in flash memory
04/05/2012WO2012044418A1 Level shifter with shoot-through current isolation
04/05/2012WO2012044413A1 Techniques for the fast settling of word lines in nand flash memory
04/05/2012WO2012021775A3 System and method to initiate a housekeeping operation at a mobile device
04/05/2012WO2012021379A3 Verify before program resume for memory devices
04/05/2012US20120084577 Charge pump apparatus, a memory integrated circuit and methods of power supply
04/05/2012US20120084494 Memory for accessing multiple sectors of information substantially concurrently
04/05/2012US20120081972 Memory arrays and methods of operating memory
04/05/2012US20120081971 E/p durability by using a sub-range of a full programming range
04/05/2012US20120081970 Semiconductor memory apparatus and program verification method
04/05/2012US20120081969 Programming method for non-volatile memory device
04/05/2012US20120081968 N well implants to separate blocks in a flash memory device
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