Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
08/2012
08/30/2012US20120218821 Non-volatile semiconductor storage device
08/30/2012US20120218820 Three dimensional stacked nonvolatile semiconductor memory
08/30/2012US20120218819 Nonvolatile semiconductor memory
08/30/2012US20120218818 Nonvolatile memory device and method for operating the same
08/30/2012US20120218817 Nonvolatile memory device, memory system including the same, and method of operating nonvolatile memory device
08/29/2012CN202406241U Digit media player
08/29/2012CN102651237A Nonvolatile memory device, memory system including the same, and method of operating nonvolatile memory device
08/29/2012CN102651236A Memory apparatus and method for controlling erase operation of the same
08/29/2012CN102651235A Nonvolatile memory device and method for operating the same
08/29/2012CN101661794B Semiconductor device
08/29/2012CN101589437B Segmented bitscan for verification of programming
08/29/2012CN101584005B Partitioned erase and erase verification in non-volatile memory
08/29/2012CN101341548B Detector of abnormal destruction of memory sectors
08/29/2012CN101241767B Nonvolatile semiconductor storage device and method of managing the same
08/29/2012CN101188142B Flash memory device using program data cache and programming method thereof
08/29/2012CN101174456B Nonvolatile memory device and method of reading information from the same
08/29/2012CN101162610B Circuit and method generating program voltage for non-volatile memory device
08/29/2012CN101140801B Phase change random access memory device and related methods of operation
08/28/2012US8255892 Flash memory programming
08/28/2012US8254183 Method of programming nonvolatile memory device
08/28/2012US8254182 Analog sensing of memory cells with a source follower driver in a semiconductor memory device
08/28/2012US8254181 Nonvolatile memory device and programming method
08/28/2012US8254180 Methods of operating memories including characterizing memory cell signal lines
08/28/2012US8254179 Method of programming a flash memory device
08/28/2012US8254178 Self-timed integrating differential current
08/28/2012US8254177 Programming non-volatile memory with variable initial programming pulse
08/28/2012US8254176 Eeprom device
08/28/2012US8254171 Nonvolatile semiconductor memory
08/28/2012US8254170 Preloading data into a flash storage device
08/28/2012US8254167 Joint encoding of logical pages in multi-page memory architecture
08/23/2012WO2012112629A2 Controlling a non-volatile memory
08/23/2012WO2012089334A3 Method and system for controlling loss of reliability of non-volatile memory
08/23/2012WO2012087803A3 Non-volatile multi-bit memory and methods with reading soft bits with non-uniformly arranged reference threshold voltages
08/23/2012US20120213009 Nonvolatile memory device and operating method thereof
08/23/2012US20120213008 Nonvolatile memory device and program verify method thereof
08/23/2012US20120213007 Controlling a non-volatile memory
08/23/2012US20120213006 Semiconductor storage device and manufacturing method of semiconductor storage device
08/23/2012US20120213005 Non-volatile memory device, memory controller, and methods thereof
08/23/2012US20120213004 Non-volatile memory device and related read method
08/23/2012US20120213003 Non-volatile memory device and related read method
08/23/2012US20120213002 Semiconductor memory device having faulty cells
08/23/2012US20120213001 Reliability metrics management for soft decoding
08/23/2012DE102012101405A1 Steuervorrichtung zum Steuern eines Datenlesens und - schreibens von und zu einem Flash-Speicher Control means for controlling a data reading and - writing to and from a flash memory
08/23/2012DE102011056526A1 Nichtflüchtige Speichervorrichtung, Speichersteuerung und Verfahren davon A nonvolatile memory device, memory controller and methods thereof
08/23/2012DE102009011255B4 Ausleseschaltung für wieder beschreibbare Speicher und Ausleseverfahren für dieselben Readout circuit for rewritable memory and selection procedure for the same
08/22/2012EP2490225A1 Source side asymmetrical precharge programming scheme
08/22/2012EP2490224A2 Non-volatile memory with single bit and multibit programming modes
08/22/2012EP2171722B1 Refresh of non-volatile memory cells based on fatigue conditions
08/22/2012CN1841558B Reading phase change memories
08/22/2012CN102646790A Non-volatile memory
08/22/2012CN102646449A Regional character line driver and flash memory array device thereof
08/22/2012CN102646448A Data writing in method for nonvolatile memory, controller and storage device
08/22/2012CN102646447A Non-volatile memory device, memory controller, and methods thereof
08/22/2012CN101826531B Semiconductor memory unit, driving method thereof and semiconductor memory
08/22/2012CN101800079B Method and device for realizing parameter self-calibration
08/22/2012CN101727975B Programmable resistance memory with diode structure
08/22/2012CN101587898B A semiconductor structure with an integrated circuit component and formation and operation method thereof
08/22/2012CN101568903B Command-based control of NAND flash memory
08/22/2012CN101506968B Shielding floating gate tunneling element structure
08/22/2012CN101447228B Method for performing operations on a memory cell
08/22/2012CN101425333B High density resistor conversion memory and memory operation method thereof
08/22/2012CN101276646B Flash memory device and erase method thereof
08/22/2012CN101006519B System of non-volatile memory and programming method thereof
08/21/2012US8250294 Block management for mass storage
08/21/2012US8248863 Data buffer control circuit and semiconductor memory apparatus including the same
08/21/2012US8248861 Memory system and method having volatile and non-volatile memory devices at same hierarchical level
08/21/2012US8248860 Memory device using a variable resistive element
08/21/2012US8248859 Methods of forming and operating NAND memory with side-tunneling
08/21/2012US8248857 Memory system with potential rank correction capability
08/21/2012US8248854 Semiconductor memory device
08/21/2012US8248851 System, apparatus, and reading method for NAND memories
08/21/2012US8248850 Data recovery for non-volatile memory based on count of data state-specific fails
08/21/2012US8248849 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield
08/21/2012US8248848 System and methods for multi-level nonvolatile memory read, program and erase
08/21/2012US8247862 Method of enhancing charge storage in an E2PROM cell
08/16/2012US20120206979 3-d structured non-volatile memory device and method of manufacturing the same
08/16/2012US20120206978 Non-Volatile Memory and Method for Power-Saving Multi-Pass Sensing
08/16/2012US20120206977 Semiconductor memory system capable of suppressing consumption current
08/16/2012US20120206976 Semiconductor storage device
08/16/2012US20120206975 Semiconductor memory apparatus and data erasing method
08/16/2012US20120206974 Sensing for all bit line architecture in a memory device
08/16/2012US20120206973 Digital Method to Obtain the I-V Curves of NVM Bitcells
08/16/2012US20120206972 Nonvolatile semiconductor memory device
08/16/2012US20120206971 Programmable memory device and memory access method
08/16/2012US20120206970 Semiconductor memory device
08/16/2012US20120206969 Memory Array
08/16/2012US20120206968 Nonvolatile semiconductor memory device
08/16/2012US20120206967 Programming and selectively erasing non-volatile storage
08/16/2012US20120206966 Method for modifying data more than once in a multi-level cell memory location within a memory array
08/16/2012US20120206965 Nonvolatile semiconductor memory device
08/16/2012US20120206964 Programming rate identification and control in a solid state memory
08/16/2012US20120206963 Semiconductor associative memory device
08/16/2012US20120206962 Method of handling reference cells in nvm arrays
08/16/2012US20120206961 Method for operating nonvolatile semiconductor memory device
08/16/2012DE112009004900T5 Vertagen von Speicheroperationen zum Reduzieren von Leselatenz in Speicherfeldern Adjourn memory operations to reduce read latency in memory arrays
08/16/2012DE102011056139A1 Benutzergerät zum Durchführen eines Datenretentionsvorgangs, sowie Speichervorrichtung und Datenretentionsverfahren User equipment for performing a data retention operation, as well as storage device and data retention method
08/16/2012DE10031806B4 Taktsteuerschaltung, Verfahren zum Erzeugen eines internen Taktsignals und synchroner Flash-Speicher Clock control circuit, A method for generating an internal clock signal and synchronous flash memory
08/15/2012EP2487688A2 Erase ramp pulse width control for non-volatile memory
08/15/2012EP2487687A1 Non-volatile memory serial core architecture
08/15/2012EP2487685A1 Non-volatile memory serial core architecture
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