G11C 16 - Erasable programmable read-only memories

Patents for G11C 16 - Erasable programmable read-only memories (44,373)
12/2011
12/08/2011	US20110299333 Non-volatile memory programming
12/08/2011	US20110299332 Test system and high voltage measurement method
12/08/2011	US20110299331 Flash memory program inhibit scheme
12/08/2011	DE10332590B4 Zeilendecodierer in einem Flashspeicher sowie Löschverfahren für eine Flashspeiicherzelle in diesem Row decoder in a flash memory and an erasing method for Flashspeiicherzelle in this
12/08/2011	DE102004063641B4 Nichtflüchtige Speichereinrichtung zum Speichern von Daten und Verfahren zum Löschen oder Programmieren derselben A non-volatile memory means for storing data and method of erasing or programming the same
12/08/2011	DE102004060349B4 Seitenpuffer einer nichtflüchtigen Speichervorrichtung und Verfahren zum Programmieren und Lesen einer nichtflüchtigen Speichervorrichtung Page buffer of a nonvolatile memory device and method for programming and reading a non-volatile memory device
12/08/2011	DE102004059411B4 Flash-Speichervorrichtung und Verfahren zur Steuerung derselben A flash memory device and method for controlling the same
12/07/2011	EP2393115A1 Memory cell
12/07/2011	EP2392008A1 System and method of pulse generation
12/07/2011	CN1825483B 非易失性存储器装置及其编程与读取方法 Non-volatile memory device and method for programming and read
12/07/2011	CN102272854A 反熔丝可编程存储器阵列 Antifuse programmable memory array
12/07/2011	CN102272853A 用于通过对相邻干扰的流水线校正来感测非易失性存储器和方法 Is used by non-volatile memory and method for correcting the pipeline adjacent interference sensed
12/07/2011	CN102272852A 连续扫描时域感测的非易失性存储器和方法 Non-volatile memory and method of continuous scanning field sensed
12/07/2011	CN102272850A 对空间和温度变化的敏感性减少的感测电路和方法 Sensitivity to temperature changes and to reduce the space of the sensing circuit and method
12/07/2011	CN102272739A 存储装置及其数据控制方法 And data storage means control method
12/07/2011	CN102270654A 阻变随机访问存储器件及其制造和操作方法 Resistive random access memory device and method of manufacturing and operating
12/07/2011	CN102270508A 编程半导体存储器件的方法 The method of programming a semiconductor memory device
12/07/2011	CN102270507A 可自调节字线电压的闪存 Word line voltage can be self-adjusting flash
12/07/2011	CN102270506A 一种闪存的编程/擦除方法 One kind of flash memory programming / erasing method
12/07/2011	CN102270505A 相变存储单元及相变存储器 Phase change memory cell and the phase change memory
12/07/2011	CN102270504A 堆叠半导体存储器件、存储器系统及修复硅通孔缺陷的方法 Stacking a semiconductor memory device, a memory system and a defect repair method TSV
12/07/2011	CN102270503A 一种半导体存储器阵列及其编程方法 A semiconductor memory array and programming
12/07/2011	CN102270502A 存储装置与相关方法 Storing means and related method
12/07/2011	CN102270501A 利用编程定序器的闪存器件和系统，以及编程方法 Use the sequencer program flash memory devices and systems, and programming methods
12/07/2011	CN102270500A 可实现dram自复位的方法及可自复位的dram The method can achieve self-resetting dram and self-resetting dram
12/07/2011	CN102270499A 一种存储装置 A storage device
12/07/2011	CN102270498A 一种低功耗相变存储器及其写操作方法 A low-power phase change memory and write methods
12/07/2011	CN102270497A 以影子非挥发存储器配置冗余存储的存储器 In the shadow of a non-volatile memory is configured redundant storage memory
12/07/2011	CN101728482B 相变半导体器件的制造方法及相变半导体器件 The method of manufacturing a semiconductor device and a phase change phase change semiconductor device
12/07/2011	CN101587741B 字线追踪系统 Wordline tracking system
12/07/2011	CN101494086B 快闪存储器储存装置、快闪存储器控制器及其切换方法 Apparatus, the flash memory controller and a flash memory storage switching method
12/07/2011	CN101458960B 叠加容量存储器及控制方法 Superposition capacity memory and control method
12/07/2011	CN101371314B 减少非易失性存储装置的读取干扰 Reducing the read disturb of nonvolatile memory device
12/07/2011	CN101359502B 一种高密度多值相变存储器的存储方案 A memory storage scheme of a high density multi-value phase change
12/07/2011	CN101154456B 闪存器件及使用其的擦除方法 Flash memory device and method of use thereof erase
12/07/2011	CN101044578B 提供基于平均阈值的刷新机制的存储器件和方法 Providing a memory device and method based on the average threshold refresh mechanism of
12/07/2011	CN101002282B 半导体存储装置及其冗余方法 Semiconductor memory device and method for redundancy
12/06/2011	US8072817 Tracking cells for a memory system
12/06/2011	US8072816 Memory block reallocation in a flash memory device
12/06/2011	US8072815 Array of non-volatile memory cells including embedded local and global reference cells and system
12/06/2011	US8072814 NAND with back biased operation
12/06/2011	US8072813 Method and apparatus for programming nonvolatile memory
12/06/2011	US8072812 Sensing of memory cells in NAND flash
12/06/2011	US8072809 Nonvolatile semiconductor memory
12/06/2011	US8072806 Semiconductor memory device and method for driving semiconductor memory device
12/06/2011	US8072805 Method and system of finding a read voltage for a flash memory
12/06/2011	US8072803 Memory device and methods for fabricating and operating the same
12/06/2011	US8072802 Memory employing redundant cell array of multi-bit cells
12/01/2011	WO2011149823A1 Programming non-volatile storage with synchronized coupling
12/01/2011	WO2011148898A1 Method for regulating voltage characteristics of semiconductor storage cell, method for regulating voltage characteristics of semiconductor storage device, charge pump, and method for regulating voltage of charge pump
12/01/2011	US20110292738 NAND-BASED 2T2b NOR FLASH ARRAY WITH A DIODE CONNECTION TO CELL'S SOURCE NODE FOR SIZE REDUCTION USING THE LEAST NUMBER OF METAL LAYERS
12/01/2011	US20110292737 Nonvolatile memory apparatus
12/01/2011	US20110292736 Semiconductor memory device and control method thereof
12/01/2011	US20110292735 Nonvolatile memory device with reduced current consumption
12/01/2011	US20110292734 Method of programming nonvolatile memory device
12/01/2011	US20110292733 Electrically programmable floating common gate cmos device and applications thereof
12/01/2011	US20110292732 Nand memory device and programming methods
12/01/2011	US20110292731 Three-Dimensional Non-Volatile Memory Devices Having Highly Integrated String Selection and Sense Amplifier Circuits Therein
12/01/2011	US20110292730 Semiconductor integrated circuit apparatus having configuration that enables plane area reduction
12/01/2011	US20110292729 Method of Controlling Non-Volatile Memory Device
12/01/2011	US20110292728 Integrated circuit of device for memory cell
12/01/2011	US20110292727 Semiconductor memory having electrically erasable and programmable semiconductor memory cells
12/01/2011	US20110292726 Nonvolatile Memory Device Capable Of Reducing Read Disturbance And Read Method Thereof
12/01/2011	US20110292725 Flash memory device and system with program sequencer, and programming method
12/01/2011	US20110292724 Nonvolatile memory device, system and programming method with dynamic verification mode selection
12/01/2011	DE19936853B4 Hochspannungsgeneratorschaltung für einen Halbleiterspeicher High-voltage generator circuit for a semiconductor memory
12/01/2011	DE112004003009B4 Nicht-flüchtiger Speicher und Verfahren zum Festlegen von Information eines Nicht-flüchtigen Speichers Non-volatile memory and method for setting information of a non-volatile memory
12/01/2011	DE112004003005B4 Nicht-Flüchtiges Speicherbauelement Non-volatile memory device
12/01/2011	DE102004047638B4 Nichtflüchtige Speicherzelle A non-volatile memory cell
11/2011
11/30/2011	EP2389645A1 Removable memory storage device with multiple authentication processes
11/30/2011	EP2301033B1 Improved programming algorithm to reduce disturb with minimal extra time penalty
11/30/2011	EP1636802B1 Tracking cells for a memory system
11/30/2011	CN102263110A 嵌入bcd工艺的eeprom核结构及其形成方法 Embed bcd process eeprom nuclear structure and method of forming
11/30/2011	CN102262903A 非易失性存储器件的编程方法 Programming non-volatile memory device
11/30/2011	CN102262902A 字符线驱动器电路与内存组件 The word line driver circuit and the memory components
11/30/2011	CN102262901A 具有能够减少平面面积的配置的半导体集成电路装置 Having a configuration capable of reducing the planar area of the semiconductor integrated circuit device
11/30/2011	CN101673754B 半导体器件 Semiconductor devices
11/30/2011	CN101577307B 电阻存储器的存储单元及其制作方法 Storage units and production methods of resistance memory
11/30/2011	CN101483065B 操作存储器的方法及其非易失性存储器 The method of operating a memory and non-volatile memory
11/30/2011	CN101441890B 电阻转变型存储器及其驱动装置和方法 Resistance change type memory and its driving apparatus and method
11/30/2011	CN101425337B 一种闪存数据存储方法和装置 One kind of flash data storage method and apparatus
11/30/2011	CN101399081B 半导体存储器件和使用其的数据管理方法 The semiconductor memory device and method of use of its data management
11/30/2011	CN101236784B 数据记录系统 Data recording system
11/30/2011	CN101123118B 用于电编程半导体存储单元的方法及电路 Method and circuit for electrically programmable memory cell of a semiconductor
11/30/2011	CN101047028B Nand型非易失性存储器的数据擦除方法 Nand type data erasing method for a nonvolatile memory
11/29/2011	US8068370 Floating gate memory device with interpoly charge trapping structure
11/29/2011	US8068369 Sense amplifier circuit and semiconductor memory device
11/29/2011	US8068368 Method of performing read operation in flash memory device
11/29/2011	US8068366 Analog read and write paths in a solid state memory device
11/29/2011	US8068365 Non-volatile memory device having configurable page size
11/29/2011	US8068364 Three dimensional stacked nonvolatile semiconductor memory
11/29/2011	US8068362 Non-volatile semiconductor memory device and method of reading the same
11/29/2011	US8068361 Systems and methods for performing a program-verify process on a nonvolatile memory by selectively pre-charging bit lines associated with memory cells during the verify operations
11/29/2011	US8068360 Reading analog memory cells using built-in multi-threshold commands
11/24/2011	WO2011146241A1 Erase and programming techniques to reduce the widening of state distributions in non-volatile memories
11/24/2011	WO2011087952A3 Non-volatile memory device and method therefor
11/24/2011	US20110289388 Persistent moving read reference
11/24/2011	US20110289376 Enhanced multilevel memory
11/24/2011	US20110289286 Memory controller and a method for writing information to a k-level memory unit
11/24/2011	US20110287619 Flash Memory Cell Arrays Having Dual Control Gates Per Memory Cell Charge Storage Element

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