Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
06/2012
06/05/2012US8194450 Methods and control circuitry for programming memory cells
06/05/2012US8194449 Memory device and operating method
06/05/2012US8194448 Technique to reduce FG-FG interference in multi bit NAND flash memory in case of adjacent pages not fully programmed
06/05/2012US8194447 Non-volatile memory device using variable resistance element with an improved write performance
06/05/2012US8194446 Methods for programming a memory device and memory devices using inhibit voltages that are less than a supply voltage
06/05/2012US8194445 Semiconductor storage device comprising dot-type charge accumulation portion and control gate, and method of manufacturing the same
05/2012
05/31/2012WO2012069862A1 Dynamically configurable embedded flash memory for electronic devices
05/31/2012WO2012068664A1 Method and apparatus for sharing internal power supplies in integrated circuit devices
05/31/2012WO2012044635A3 Sensing for nand memory based on word line position
05/31/2012WO2012039946A3 Memory quality monitor based compensation method and apparatus
05/31/2012WO2009088909A3 3t high density nvdram cell
05/31/2012US20120137067 Non-Volatile Memory Device And Read Method Thereof
05/31/2012US20120137048 Method and apparatus for improving endurance of flash memories
05/31/2012US20120134215 Memory devices having select gates with p type bodies, memory strings having separate source lines and methods
05/31/2012US20120134214 Semiconductor memory device and method of programming the same
05/31/2012US20120134213 Method compensation operating voltage, flash memory device, and data storage device
05/31/2012US20120134212 Nonvolatile semiconductor memory device
05/31/2012US20120134211 Memory system
05/31/2012US20120134210 Nonvolatile semiconductor memory device
05/31/2012US20120134209 Single-Transistor EEPROM Array and Operation Methods
05/31/2012US20120134208 Nonvolatile memory device, memory system, and read method thereof
05/31/2012US20120134207 Non-Volatile Memory Device And Read Method Thereof
05/31/2012DE102011054181A1 Nichtflüchtige Speichervorrichtung und Ausleseverfahren davon Non-volatile memory device and read method thereof
05/30/2012EP2458592A2 Multiple pass write sequence for non-volatile storage
05/30/2012EP2122628B1 Source side asymmetrical precharge programming scheme
05/30/2012EP1620860B1 Memory with uniform read and verification threshold
05/30/2012EP1543521B1 Non-volatile memory and method with reduced bit line crosstalk errors
05/30/2012CN202259963U USB concentrator with memory function
05/30/2012CN202258379U Defective hard disk data erasing device
05/30/2012CN202258359U Burner and wiped/written data output switching circuit thereof
05/30/2012CN1981344B Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer
05/30/2012CN1967688B Information recording medium and method for manufacturing the same
05/30/2012CN1811988B Storage unit array offset method and semiconductor storage device
05/30/2012CN1555559B Selective operation of a multi-state non-volatile memory system in a binary mode
05/30/2012CN1423278B High-density integrated circuit with memory array
05/30/2012CN102484107A Electronic device having a molding compound including a composite material
05/30/2012CN102483955A Methods, devices, and systems for dealing with threshold voltage change in memory devices
05/30/2012CN102483954A Memory kink checking
05/30/2012CN102483953A 检测对非易失性储存器的编程的完成 Detection of the non-volatile memory programming is completed
05/30/2012CN102483952A Memory system
05/30/2012CN102483951A Interruptible nand flash memory
05/30/2012CN102483950A Thermally Shielded Resistive Memory Element For Low Programming Current
05/30/2012CN102483949A Preloading data into a flash storage device
05/30/2012CN102483948A 具有改进型存储器块切换的半导体存储器 Improved memory block having a semiconductor memory switch
05/30/2012CN102483686A 数据存储系统和用于操作数据存储系统的方法 The data storage system and method for operating a data storage system
05/30/2012CN102479556A 非易失性存储器件及其读取方法 A nonvolatile memory device and method for reading
05/30/2012CN102479551A Non-volatile memory device and read method thereof
05/30/2012CN102479550A Method compensation operating voltage, flash memory device, and data storage device
05/30/2012CN102479549A Semiconductor storage device
05/30/2012CN102479548A 电可擦可编程只读存储器的数据写入方法与写入装置 Electrically erasable programmable read-only memory and a data writing means writing method
05/30/2012CN102479547A Non-volatile memory device, method of operating the same, and electronic device having the same
05/30/2012CN102479546A 一种对电阻存储器进行编程的电路 Kind of resistance memory programming circuit
05/30/2012CN101660119B Compound phase-change material target and preparation method thereof
05/30/2012CN101625897B Data write-in method, storage system and controller used for quick flash memory
05/30/2012CN101552039B Nonvolatile semiconductor memory device , and method for driving the nonvolatile semiconductor memory device
05/30/2012CN101546603B Flash memory device and block selection circuit thereof
05/30/2012CN101419840B Data storage method for flash
05/30/2012CN101278352B Daisy chain cascading devices and method
05/30/2012CN101174460B Decoders and decoding methods for nonvolatile memory devices using level shifting
05/30/2012CN101101964B Non-volatile memory device including a variable resistance material
05/30/2012CN101030622B Nonvolatile memory device and nonvolatile memory array including the same
05/29/2012USRE43417 Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
05/29/2012US8189405 Data readout circuit and semiconductor memory device
05/29/2012US8189401 Semiconductor memory device and control method of the same
05/29/2012US8189399 EEPROM having single gate structure and method of operating the same
05/29/2012US8189398 Read operation method of memory device
05/29/2012US8189396 Word line driver in a hierarchical NOR flash memory
05/29/2012US8189395 Nonvolatile semiconductor memory and data reading method
05/29/2012US8189394 Page buffer circuit of nonvolatile memory device and method of operating the same
05/29/2012US8189392 Page buffer circuit
05/29/2012US8189391 Non-volatile semiconductor storage device including a control circuit
05/29/2012US8189390 NAND flash architecture with multi-level row decoding
05/29/2012US8189389 Nonvolatile semiconductor memory device with a voltage setting circuit for a step-up shift test
05/29/2012US8189388 Fuse circuit and flash memory device having the same
05/29/2012US8189387 Flash memory with multi-bit read
05/29/2012US8189384 System and method to control one time programmable memory
05/29/2012US8189383 Page buffer of non-volatile memory device and programming method of non-volatile memory device
05/29/2012US8189382 Read method for MLC
05/29/2012US8189381 System and method for reading flash memory cells
05/29/2012US8189378 Reducing program disturb in non-volatile storage
05/29/2012US8189377 Semiconductor device
05/29/2012US8189360 Semiconductor memory device
05/29/2012US8188533 Write once read only memory employing charge trapping in insulators
05/24/2012WO2012067739A1 Word line kicking voltage when sensing non-volatile storage cell
05/24/2012WO2012030388A3 Stripe-based non-volatile multilevel memory operation
05/24/2012US20120127803 Nonvolatile semiconductor storage device
05/24/2012US20120127802 Non-volatile memory device, method of operating the same, and electronic device having the same
05/24/2012US20120127801 Method of operating nonvolatile memory device
05/24/2012US20120127800 Pair Bit Line Programming To Improve Boost Voltage Clamping
05/24/2012US20120127799 Write-precompensation and variable write backoff
05/24/2012US20120127798 Method and apparatus for sharing internal power supplies in integrated circuit devices
05/24/2012US20120127797 System and method for testing for defects in a semiconductor memory array
05/24/2012US20120127796 Retention in nvm with top or bottom injection
05/24/2012US20120127795 Non-volatile memory and manufacturing method thereof and operating method of memory cell
05/24/2012US20120127794 Program verify operation in a memory device
05/24/2012US20120127793 Memory arrays
05/24/2012US20120127792 Semiconductor memory having electrically erasable and programmable semiconductor memory cells
05/24/2012US20120127791 Nonvolatile memory device, memory system comprising same, and method of programming same
05/24/2012DE102011086289A1 Speicherbauelement, Speichersystem und Löschverfahren Memory device, memory system and erasing method
05/23/2012EP1594140B1 Semiconductor device and method for controlling semiconductor device
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